WO2005060383A3 - Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings - Google Patents

Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings Download PDF

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Publication number
WO2005060383A3
WO2005060383A3 PCT/US2004/021341 US2004021341W WO2005060383A3 WO 2005060383 A3 WO2005060383 A3 WO 2005060383A3 US 2004021341 W US2004021341 W US 2004021341W WO 2005060383 A3 WO2005060383 A3 WO 2005060383A3
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WO
WIPO (PCT)
Prior art keywords
aluminide coating
vapor deposition
reaction chamber
chemical vapor
vapor phase
Prior art date
Application number
PCT/US2004/021341
Other languages
French (fr)
Other versions
WO2005060383A2 (en
Inventor
David C Fairbourn
Original Assignee
Aeromet Technologies Inc
David C Fairbourn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aeromet Technologies Inc, David C Fairbourn filed Critical Aeromet Technologies Inc
Priority to EP04820715A priority Critical patent/EP1651793B1/en
Priority to DE602004019423T priority patent/DE602004019423D1/en
Publication of WO2005060383A2 publication Critical patent/WO2005060383A2/en
Publication of WO2005060383A3 publication Critical patent/WO2005060383A3/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/029—Graded interfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C23C28/3215—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer at least one MCrAlX layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

Abstract

A chemical vapor deposition (CVD) system and method for applying an aluminide coating (34) constituted by two or more extrinsic metal components on a jet engine component (26). The aluminide coating (34) is capable of forming a protective complex oxide upon subsequent heating in an oxidizing environment. At least one of the extrinsic metals in the aluminide coating (34) is provided as a distinct vapor phase reactant (37) from a receptacle (36) coupled by a closed communication path (40) with the reaction chamber (12) of the CVD system and free of a carrier gas. The aluminide coating (34) is formed by the chemical combination of the vapor phase reactant (37) with another vapor phase reactant (35) either created in situ in the reaction chamber (12) or supplied by a carrier gas to the reaction chamber (12) from a precursor source (60).
PCT/US2004/021341 2003-07-03 2004-07-01 Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings WO2005060383A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04820715A EP1651793B1 (en) 2003-07-03 2004-07-01 Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
DE602004019423T DE602004019423D1 (en) 2003-07-03 2004-07-01 EASY CVD SYSTEM AND METHOD FOR SEPARATING MULTIMETAL ALUMINIDE COATINGS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/613,620 2003-07-03
US10/613,620 US7390535B2 (en) 2003-07-03 2003-07-03 Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings

Publications (2)

Publication Number Publication Date
WO2005060383A2 WO2005060383A2 (en) 2005-07-07
WO2005060383A3 true WO2005060383A3 (en) 2005-11-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/021341 WO2005060383A2 (en) 2003-07-03 2004-07-01 Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings

Country Status (6)

Country Link
US (2) US7390535B2 (en)
EP (1) EP1651793B1 (en)
AT (1) ATE422562T1 (en)
DE (1) DE602004019423D1 (en)
RU (1) RU2352685C2 (en)
WO (1) WO2005060383A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451692B1 (en) * 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
JP4217870B2 (en) * 2002-07-15 2009-02-04 日本電気株式会社 Organosiloxane copolymer film, manufacturing method thereof, growth apparatus, and semiconductor device using the copolymer film
US7390535B2 (en) * 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
US20060057418A1 (en) * 2004-09-16 2006-03-16 Aeromet Technologies, Inc. Alluminide coatings containing silicon and yttrium for superalloys and method of forming such coatings
US9133718B2 (en) * 2004-12-13 2015-09-15 Mt Coatings, Llc Turbine engine components with non-aluminide silicon-containing and chromium-containing protective coatings and methods of forming such non-aluminide protective coatings
WO2008085816A1 (en) * 2007-01-03 2008-07-17 The Penn State Research Foundation Coatings to inhibit formation of deposits from elevated temperature contact with hydrocarbons
DE102008026974A1 (en) * 2008-06-03 2009-12-10 Aixtron Ag Method and apparatus for depositing thin layers of polymeric para-xylylenes or substituted para-xylylenes
US20090317547A1 (en) * 2008-06-18 2009-12-24 Honeywell International Inc. Chemical vapor deposition systems and methods for coating a substrate
EP2427590B1 (en) * 2009-05-08 2018-07-11 MT Coatings, LLC Apparatus and methods for forming modified metal coatings
US20110008972A1 (en) * 2009-07-13 2011-01-13 Daniel Damjanovic Methods for forming an ald sio2 film
US9139903B2 (en) * 2010-05-17 2015-09-22 Aeromet Technologies, Inc. Chemical vapor deposition of metal layers for improved brazing
US20120073568A1 (en) * 2010-09-23 2012-03-29 Applied Nanstructured Solutions, Llc. Methods for in situ deposition of coatings and articles produced using same
US8475882B2 (en) * 2011-10-19 2013-07-02 General Electric Company Titanium aluminide application process and article with titanium aluminide surface
CN104762600B (en) * 2015-04-20 2017-05-10 京东方科技集团股份有限公司 Evaporated crucible and evaporation device
RU2727634C1 (en) * 2017-02-08 2020-07-22 Пикосан Ой Device for deposition or cleaning with movable structure and method of operation thereof
US11393703B2 (en) * 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
EP4215649A1 (en) 2022-01-24 2023-07-26 Ivan Timokhin Preparation of shaped crystalline layers by use of the inner shape/surface of the ampule as a shape forming surface

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558365A (en) * 1978-10-27 1980-05-01 Hitachi Metals Ltd Coating method for titanium compound
US5407704A (en) * 1991-12-04 1995-04-18 Howmet Corporation CVD apparatus and method
US5407705A (en) * 1993-03-01 1995-04-18 General Electric Company Method and apparatus for producing aluminide regions on superalloy substrates, and articles produced thereby
US20030032283A1 (en) * 2000-08-18 2003-02-13 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US20030049374A1 (en) * 2001-09-10 2003-03-13 Warnes Bruce M. Chemical vapor deposition apparatus and method

Family Cites Families (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2598957A (en) * 1949-02-07 1952-06-03 Dayton Pump & Mfg Co Panel arrangement for dispensing pumps
US2816048A (en) * 1949-08-05 1957-12-10 Onera (Off Nat Aerospatiale) Process of forming superficial alloys of chromium on metal bodies
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
FR1433497A (en) * 1965-02-16 1966-04-01 Snecma Process for depositing a protective layer on a metal part by a vapor phase method
US3556744A (en) * 1965-08-16 1971-01-19 United Aircraft Corp Composite metal article having nickel alloy having coats containing chromium and aluminum
US3507248A (en) * 1967-06-15 1970-04-21 Ibm Vacuum evaporation coating apparatus including means for precleaning substrates by ion bombardment
US3801357A (en) * 1969-06-30 1974-04-02 Alloy Surfaces Co Inc Diffusion coating
US3979534A (en) * 1974-07-26 1976-09-07 General Electric Company Protective coatings for dispersion strengthened nickel-chromium/alloys
US4084025A (en) * 1974-08-02 1978-04-11 General Electric Company Process of applying protective aluminum coatings for non-super-strength nickel-chromium alloys
US3973270A (en) * 1974-10-30 1976-08-03 Westinghouse Electric Corporation Charge storage target and method of manufacture
GB1545584A (en) * 1975-03-07 1979-05-10 Onera (Off Nat Aerospatiale) Processes and systems for the formation of surface diffusion alloys on perforate metal workpieces
US4076380A (en) * 1976-10-28 1978-02-28 Bell Telephone Laboratories, Incorporated Graded index optical fiber
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds
US4101714A (en) * 1977-03-31 1978-07-18 General Electric Company High temperature oxidation resistant dispersion strengthened nickel-chromium alloys
US4264682A (en) * 1978-10-27 1981-04-28 Hitachi Metals, Ltd. Surface hafnium-titanium compound coated hard alloy material and method of producing the same
US4694036A (en) * 1983-06-23 1987-09-15 Alloy Surfaces Company, Inc. Metal diffusion and use
US4220460A (en) * 1979-02-05 1980-09-02 Western Electric Company, Inc. Vapor delivery system and method
US4327134A (en) * 1979-11-29 1982-04-27 Alloy Surfaces Company, Inc. Stripping of diffusion treated metals
US4262035A (en) * 1980-03-07 1981-04-14 Bell Telephone Laboratories, Incorporated Modified chemical vapor deposition of an optical fiber using an rf plasma
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors
FR2508063A1 (en) * 1981-06-18 1982-12-24 Snecma STEAM PROCESS FOR THE DEPOSITION OF A PROTECTIVE COATING ON A METAL PART, DEVICE FOR IMPLEMENTING SAME AND PARTS OBTAINED ACCORDING TO SAID METHOD
US4396213A (en) * 1981-09-02 1983-08-02 John J. Kirlin Method of joining pipe ends and joint formed thereby
JPS591671A (en) * 1982-05-28 1984-01-07 Fujitsu Ltd Plasma cvd device
US4476178A (en) * 1982-06-24 1984-10-09 United Technologies Corporation Composite silicon carbide coatings for carbon-carbon materials
US4472476A (en) * 1982-06-24 1984-09-18 United Technologies Corporation Composite silicon carbide/silicon nitride coatings for carbon-carbon materials
JPS6097622A (en) * 1983-11-01 1985-05-31 Toshiba Mach Co Ltd Epitaxial device
US4699084A (en) * 1982-12-23 1987-10-13 The United States Of America As Represented By The Secretary Of The Army Apparatus for producing high quality epitaxially grown semiconductors
US5514482A (en) * 1984-04-25 1996-05-07 Alliedsignal Inc. Thermal barrier coating system for superalloy components
GB2167773A (en) * 1984-11-29 1986-06-04 Secr Defence Improvements in or relating to coating processes
US4698244A (en) * 1985-10-31 1987-10-06 Air Products And Chemicals, Inc. Deposition of titanium aluminides
US4816291A (en) * 1987-08-19 1989-03-28 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
DE3742944C1 (en) * 1987-12-18 1988-10-27 Mtu Muenchen Gmbh Oxidation protection layer
US4963395A (en) * 1988-06-24 1990-10-16 Combustion Engineering, Inc. Method of chromizing large size articles
US5149376A (en) * 1988-06-30 1992-09-22 Societe Nationale D'etude Et De Construction De Moteurs D'aviation "S.N.E.C.M.A." Process and apparatus for the simultaneous deposition of a protective coating on internal and external surfaces of heat-resistant alloy parts
US5087531A (en) * 1988-11-30 1992-02-11 Sharp Kabushiki Kaisha Electroluminescent device
US4915744A (en) * 1989-02-03 1990-04-10 Applied Solar Energy Corporation High efficiency solar cell
US4961958A (en) * 1989-06-30 1990-10-09 The Regents Of The Univ. Of Calif. Process for making diamond, and doped diamond films at low temperature
US5132755A (en) * 1989-07-11 1992-07-21 Oki Electric Industry Co. Ltd. Field effect transistor
US5114559A (en) * 1989-09-26 1992-05-19 Ricoh Company, Ltd. Thin film deposition system
US5139824A (en) * 1990-08-28 1992-08-18 Liburdi Engineering Limited Method of coating complex substrates
US5071678A (en) * 1990-10-09 1991-12-10 United Technologies Corporation Process for applying gas phase diffusion aluminide coatings
DE4035789C1 (en) * 1990-11-10 1991-06-13 Mtu Muenchen Gmbh
JP3106172B2 (en) * 1991-02-26 2000-11-06 東京エレクトロン株式会社 Sealing structure of heat treatment equipment
DE4119967C1 (en) * 1991-06-18 1992-09-17 Mtu Muenchen Gmbh
US5211731A (en) * 1991-06-27 1993-05-18 The United States Of Americas As Represented By The Secretary Of The Navy Plasma chemical vapor deposition of halide glasses
US5264245A (en) * 1991-12-04 1993-11-23 Howmet Corporation CVD method for forming uniform coatings
US5286520A (en) * 1991-12-13 1994-02-15 Ford Motor Company Preparation of fluorine-doped tungstic oxide
TW222345B (en) * 1992-02-25 1994-04-11 Semicondustor Energy Res Co Ltd Semiconductor and its manufacturing method
US6709907B1 (en) * 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5300313A (en) * 1992-12-16 1994-04-05 General Electric Company Method for determining thickness of chemical vapor deposited layers
US5466494A (en) * 1993-01-29 1995-11-14 Kabushiki Kaisha Komatsu Seisakusho Method for producing thin film
US5902638A (en) * 1993-03-01 1999-05-11 General Electric Company Method for producing spallation-resistant protective layer on high performance alloys
EP0689618B1 (en) * 1993-03-24 2003-02-26 Georgia Tech Research Corporation Method and apparatus for the combustion chemical vapor deposition of films and coatings
US5858465A (en) * 1993-03-24 1999-01-12 Georgia Tech Research Corporation Combustion chemical vapor deposition of phosphate films and coatings
US5377429A (en) * 1993-04-19 1995-01-03 Micron Semiconductor, Inc. Method and appartus for subliming precursors
US5484484A (en) * 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
JP2999346B2 (en) * 1993-07-12 2000-01-17 オリエンタルエンヂニアリング株式会社 Substrate surface coating method and coating member
GB9315771D0 (en) * 1993-07-30 1993-09-15 Epichem Ltd Method of depositing thin metal films
US6689422B1 (en) * 1994-02-16 2004-02-10 Howmet Research Corporation CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
US5658614A (en) * 1994-10-28 1997-08-19 Howmet Research Corporation Platinum aluminide CVD coating method
US5562998A (en) * 1994-11-18 1996-10-08 Alliedsignal Inc. Durable thermal barrier coating
GB9426257D0 (en) * 1994-12-24 1995-03-01 Rolls Royce Plc Thermal barrier coating for a superalloy article and method of application
JP3022229B2 (en) 1994-12-26 2000-03-15 東洋製罐株式会社 Method for forming silicon oxide film of uniform thickness on three-dimensional container made of plastics material
JP3982844B2 (en) * 1995-01-12 2007-09-26 株式会社日立国際電気 Semiconductor manufacturing apparatus and semiconductor manufacturing method
US5512382A (en) * 1995-05-08 1996-04-30 Alliedsignal Inc. Porous thermal barrier coating
US5823416A (en) * 1995-07-28 1998-10-20 Matsushita Electric Industrial Co., Ltd. Apparatus and method for surface treatment, and apparatus and method for wire bonding using the surface treatment apparatus
US5820641A (en) * 1996-02-09 1998-10-13 Mks Instruments, Inc. Fluid cooled trap
TW506620U (en) 1996-03-15 2002-10-11 Asahi Glass Co Ltd Low pressure CVD apparatus
US5851293A (en) * 1996-03-29 1998-12-22 Atmi Ecosys Corporation Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US5849360A (en) * 1996-06-20 1998-12-15 National Science Council Tube chemical gas deposition method of preparing titanium nitride coated titanium carbide for titanium carbide/silicon nitride composites
US5989733A (en) * 1996-07-23 1999-11-23 Howmet Research Corporation Active element modified platinum aluminide diffusion coating and CVD coating method
US6089184A (en) 1997-06-11 2000-07-18 Tokyo Electron Limited CVD apparatus and CVD method
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
DE19730007C1 (en) 1997-07-12 1999-03-25 Mtu Muenchen Gmbh Method and device for the gas phase diffusion coating of workpieces made of heat-resistant material with a coating material
US6168874B1 (en) * 1998-02-02 2001-01-02 General Electric Company Diffusion aluminide bond coat for a thermal barrier coating system and method therefor
GB9811456D0 (en) * 1998-05-29 1998-07-29 Rolls Royce Plc A metallic article having a thermal barrier coating and a method of application thereof
US6143361A (en) 1998-10-19 2000-11-07 Howmet Research Corporation Method of reacting excess CVD gas reactant
US6258461B1 (en) 1999-03-12 2001-07-10 Alloy Surfaces Co., Inc. Activated nickel screens and foils
US6332926B1 (en) 1999-08-11 2001-12-25 General Electric Company Apparatus and method for selectively coating internal and external surfaces of an airfoil
US6692324B2 (en) * 2000-08-29 2004-02-17 Ut-Battelle, Llc Single self-aligned carbon containing tips
KR100344103B1 (en) * 2000-09-04 2002-07-24 에피밸리 주식회사 The semiconductor device with In(x)Ga(1-x)N passivation layer and the producing method
US6602356B1 (en) * 2000-09-20 2003-08-05 General Electric Company CVD aluminiding process for producing a modified platinum aluminide bond coat for improved high temperature performance
US6488986B2 (en) * 2001-01-29 2002-12-03 General Electric Company Combined coat, heat treat, quench method for gas turbine engine components
US6649431B2 (en) * 2001-02-27 2003-11-18 Ut. Battelle, Llc Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases
US20020166508A1 (en) * 2001-03-21 2002-11-14 Ryuji Biro Vacuum deposition system and thin-film deposition process
US6605161B2 (en) 2001-06-05 2003-08-12 Aeromet Technologies, Inc. Inoculants for intermetallic layer
JP4098556B2 (en) * 2001-07-31 2008-06-11 ローム株式会社 Terminal board, circuit board provided with the terminal board, and method for connecting the terminal board
US6576067B2 (en) * 2001-08-31 2003-06-10 General Electric Co. Fabrication of an article having a protective coating with a polished, pre-oxidized protective-coating surface
US20030111014A1 (en) * 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
US6646328B2 (en) * 2002-01-11 2003-11-11 Taiwan Semiconductor Manufacturing Co. Ltd. Chip antenna with a shielding layer
JP2003289072A (en) * 2002-03-28 2003-10-10 Sharp Corp Substrate with flattened film and substrate for display device, and method for manufacturing the same
US6967159B2 (en) * 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US6958300B2 (en) * 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US6995081B2 (en) * 2002-08-28 2006-02-07 Micron Technology, Inc. Systems and methods for forming tantalum silicide layers
US7087481B2 (en) * 2002-08-28 2006-08-08 Micron Technology, Inc. Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands
US7030042B2 (en) * 2002-08-28 2006-04-18 Micron Technology, Inc. Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
US6730164B2 (en) * 2002-08-28 2004-05-04 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US6984592B2 (en) * 2002-08-28 2006-01-10 Micron Technology, Inc. Systems and methods for forming metal-doped alumina
US6784049B2 (en) * 2002-08-28 2004-08-31 Micron Technology, Inc. Method for forming refractory metal oxide layers with tetramethyldisiloxane
US7041609B2 (en) * 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
US7112485B2 (en) * 2002-08-28 2006-09-26 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
US6794284B2 (en) * 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US6803135B2 (en) * 2003-02-24 2004-10-12 Chromalloy Gas Turbine Corporation Thermal barrier coating having low thermal conductivity
US7115528B2 (en) * 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
US7390535B2 (en) * 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
US7211509B1 (en) * 2004-06-14 2007-05-01 Novellus Systems, Inc, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
US20060057418A1 (en) * 2004-09-16 2006-03-16 Aeromet Technologies, Inc. Alluminide coatings containing silicon and yttrium for superalloys and method of forming such coatings
US8137820B2 (en) * 2006-02-24 2012-03-20 Mt Coatings, Llc Roughened coatings for gas turbine engine components
EP2427590B1 (en) * 2009-05-08 2018-07-11 MT Coatings, LLC Apparatus and methods for forming modified metal coatings
US9139903B2 (en) * 2010-05-17 2015-09-22 Aeromet Technologies, Inc. Chemical vapor deposition of metal layers for improved brazing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558365A (en) * 1978-10-27 1980-05-01 Hitachi Metals Ltd Coating method for titanium compound
US5407704A (en) * 1991-12-04 1995-04-18 Howmet Corporation CVD apparatus and method
US5407705A (en) * 1993-03-01 1995-04-18 General Electric Company Method and apparatus for producing aluminide regions on superalloy substrates, and articles produced thereby
US20030032283A1 (en) * 2000-08-18 2003-02-13 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US20030049374A1 (en) * 2001-09-10 2003-03-13 Warnes Bruce M. Chemical vapor deposition apparatus and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 004, no. 098 (C - 018) 15 July 1980 (1980-07-15) *

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