WO2005074013A3 - Silicon carbide on diamond substrates and related devices and methods - Google Patents

Silicon carbide on diamond substrates and related devices and methods Download PDF

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Publication number
WO2005074013A3
WO2005074013A3 PCT/US2005/002221 US2005002221W WO2005074013A3 WO 2005074013 A3 WO2005074013 A3 WO 2005074013A3 US 2005002221 W US2005002221 W US 2005002221W WO 2005074013 A3 WO2005074013 A3 WO 2005074013A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
wafer
composite wafer
epitaxial growth
methods
Prior art date
Application number
PCT/US2005/002221
Other languages
French (fr)
Other versions
WO2005074013A2 (en
Inventor
Adam William Saxler
Original Assignee
Cree Inc
Adam William Saxler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Adam William Saxler filed Critical Cree Inc
Priority to JP2006551378A priority Critical patent/JP5192152B2/en
Priority to EP05706059.2A priority patent/EP1706895B1/en
Priority to EP18212254.9A priority patent/EP3496152B1/en
Priority to CA 2554003 priority patent/CA2554003A1/en
Publication of WO2005074013A2 publication Critical patent/WO2005074013A2/en
Publication of WO2005074013A3 publication Critical patent/WO2005074013A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Abstract

A method of forming a high-power, high-frequency device in wide bandgap semiconductor materials with reduced junction temperature, higher power density during operation and improved reliability at a rated power density is disclosed, along with resulting semiconductor structures and devices. The method includes adding a layer of diamond to a silicon carbide wafer to increase the thermal conductivity of the resulting composite wafer, thereafter reducing the thickness of the silicon carbide portion of the composite wafer while retaining sufficient thickness of silicon carbide to support epitaxial growth thereon, preparing the silicon carbide surface of the composite wafer for epitaxial growth thereon, and adding a Group III nitride heterostructure to the prepared silicon carbide face of the wafer.
PCT/US2005/002221 2004-01-22 2005-01-14 Silicon carbide on diamond substrates and related devices and methods WO2005074013A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006551378A JP5192152B2 (en) 2004-01-22 2005-01-14 Silicon carbide on diamond substrate and related devices and methods
EP05706059.2A EP1706895B1 (en) 2004-01-22 2005-01-14 Method for forming a composite substrate for a high power device in wide bandgap materials
EP18212254.9A EP3496152B1 (en) 2004-01-22 2005-01-14 Wide bandgap high electron mobility transistor (hemt)
CA 2554003 CA2554003A1 (en) 2004-01-22 2005-01-14 Silicon carbide on diamond substrates and related devices and methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/707,898 US7033912B2 (en) 2004-01-22 2004-01-22 Silicon carbide on diamond substrates and related devices and methods
US10/707,898 2004-01-22

Publications (2)

Publication Number Publication Date
WO2005074013A2 WO2005074013A2 (en) 2005-08-11
WO2005074013A3 true WO2005074013A3 (en) 2005-11-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/002221 WO2005074013A2 (en) 2004-01-22 2005-01-14 Silicon carbide on diamond substrates and related devices and methods

Country Status (8)

Country Link
US (5) US7033912B2 (en)
EP (2) EP3496152B1 (en)
JP (2) JP5192152B2 (en)
KR (1) KR20060127907A (en)
CN (1) CN100530544C (en)
CA (1) CA2554003A1 (en)
TW (1) TW200537564A (en)
WO (1) WO2005074013A2 (en)

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