WO2005074013A3 - Silicon carbide on diamond substrates and related devices and methods - Google Patents
Silicon carbide on diamond substrates and related devices and methods Download PDFInfo
- Publication number
- WO2005074013A3 WO2005074013A3 PCT/US2005/002221 US2005002221W WO2005074013A3 WO 2005074013 A3 WO2005074013 A3 WO 2005074013A3 US 2005002221 W US2005002221 W US 2005002221W WO 2005074013 A3 WO2005074013 A3 WO 2005074013A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon carbide
- wafer
- composite wafer
- epitaxial growth
- methods
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 6
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 6
- 229910003460 diamond Inorganic materials 0.000 title abstract 2
- 239000010432 diamond Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title 1
- 239000002131 composite material Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA 2554003 CA2554003A1 (en) | 2004-01-22 | 2005-01-14 | Silicon carbide on diamond substrates and related devices and methods |
EP05706059.2A EP1706895B1 (en) | 2004-01-22 | 2005-01-14 | Method for forming a composite substrate for a high power device in wide bandgap materials |
JP2006551378A JP5192152B2 (en) | 2004-01-22 | 2005-01-14 | Silicon carbide on diamond substrate and related devices and methods |
EP18212254.9A EP3496152B1 (en) | 2004-01-22 | 2005-01-14 | Wide bandgap high electron mobility transistor (hemt) |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/707,898 | 2004-01-22 | ||
US10/707,898 US7033912B2 (en) | 2004-01-22 | 2004-01-22 | Silicon carbide on diamond substrates and related devices and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005074013A2 WO2005074013A2 (en) | 2005-08-11 |
WO2005074013A3 true WO2005074013A3 (en) | 2005-11-03 |
Family
ID=34794562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/002221 WO2005074013A2 (en) | 2004-01-22 | 2005-01-14 | Silicon carbide on diamond substrates and related devices and methods |
Country Status (8)
Country | Link |
---|---|
US (5) | US7033912B2 (en) |
EP (2) | EP1706895B1 (en) |
JP (2) | JP5192152B2 (en) |
KR (1) | KR20060127907A (en) |
CN (1) | CN100530544C (en) |
CA (1) | CA2554003A1 (en) |
TW (1) | TW200537564A (en) |
WO (1) | WO2005074013A2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
CA2554003A1 (en) | 2005-08-11 |
EP3496152A1 (en) | 2019-06-12 |
US20050164482A1 (en) | 2005-07-28 |
TW200537564A (en) | 2005-11-16 |
EP1706895B1 (en) | 2019-08-28 |
US20110064105A1 (en) | 2011-03-17 |
US8513672B2 (en) | 2013-08-20 |
EP3496152B1 (en) | 2021-03-31 |
CN1910737A (en) | 2007-02-07 |
JP2007519262A (en) | 2007-07-12 |
US20060138455A1 (en) | 2006-06-29 |
JP5192152B2 (en) | 2013-05-08 |
US20130306990A1 (en) | 2013-11-21 |
KR20060127907A (en) | 2006-12-13 |
EP1706895A2 (en) | 2006-10-04 |
US7579626B2 (en) | 2009-08-25 |
US7033912B2 (en) | 2006-04-25 |
JP6227231B2 (en) | 2017-11-08 |
US9142617B2 (en) | 2015-09-22 |
US20090272984A1 (en) | 2009-11-05 |
US7863624B2 (en) | 2011-01-04 |
JP2012238861A (en) | 2012-12-06 |
CN100530544C (en) | 2009-08-19 |
WO2005074013A2 (en) | 2005-08-11 |
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