WO2005082774A3 - Method for making a planar cantilever mems switch - Google Patents

Method for making a planar cantilever mems switch Download PDF

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Publication number
WO2005082774A3
WO2005082774A3 PCT/US2005/005272 US2005005272W WO2005082774A3 WO 2005082774 A3 WO2005082774 A3 WO 2005082774A3 US 2005005272 W US2005005272 W US 2005005272W WO 2005082774 A3 WO2005082774 A3 WO 2005082774A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
common ground
ground plane
armature
depositing
Prior art date
Application number
PCT/US2005/005272
Other languages
French (fr)
Other versions
WO2005082774A2 (en
Inventor
Chia-Shing Chou
Original Assignee
Wireless Mems Inc
Chia-Shing Chou
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/783,772 external-priority patent/US6962832B2/en
Application filed by Wireless Mems Inc, Chia-Shing Chou filed Critical Wireless Mems Inc
Priority to GB0618409A priority Critical patent/GB2427758B/en
Publication of WO2005082774A2 publication Critical patent/WO2005082774A2/en
Publication of WO2005082774A3 publication Critical patent/WO2005082774A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0121—Processes for the planarization of structures involving addition of material followed by removal of parts of said material, i.e. subtractive planarization
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0072—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49105—Switch making

Abstract

A method for pseudo-planarization of an electromechanical device and for forming a durable metal contact on the electromechanical device and devices formed by the method are presented. The method comprises acts of depositing various layers forming a semiconductor device. Two principal aspects of the method include the formation of a planarized dielectric/conductor layer on a substrate and the formation of an electrode in an armature of a microelectromechanical switch, with the electrode formed such that it interlocks a structural layer of the armature to ensure it remains fixed to the armature over a large number of cycles. The present invention also relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.
PCT/US2005/005272 2004-02-20 2005-02-17 Method for making a planar cantilever mems switch WO2005082774A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0618409A GB2427758B (en) 2004-02-20 2005-02-17 A method for pseudo-planarization of an electromechanical device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/783,772 2004-02-20
US10/783,772 US6962832B2 (en) 2004-02-02 2004-02-20 Fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch
US10/994,703 US7101724B2 (en) 2004-02-20 2004-11-20 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US10/994,703 2004-11-20

Publications (2)

Publication Number Publication Date
WO2005082774A2 WO2005082774A2 (en) 2005-09-09
WO2005082774A3 true WO2005082774A3 (en) 2005-12-22

Family

ID=34861329

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/005272 WO2005082774A2 (en) 2004-02-20 2005-02-17 Method for making a planar cantilever mems switch

Country Status (5)

Country Link
US (4) US7352266B2 (en)
CN (1) CN100575242C (en)
GB (7) GB2448446B (en)
TW (1) TWI294138B (en)
WO (1) WO2005082774A2 (en)

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Also Published As

Publication number Publication date
GB0813333D0 (en) 2008-08-27
GB0813332D0 (en) 2008-08-27
TWI294138B (en) 2008-03-01
GB0618409D0 (en) 2006-11-08
US20050184836A1 (en) 2005-08-25
US7545234B2 (en) 2009-06-09
CN100575242C (en) 2009-12-30
US20060125031A1 (en) 2006-06-15
TW200534354A (en) 2005-10-16
GB2448446A (en) 2008-10-15
US20090215213A1 (en) 2009-08-27
GB2448446B (en) 2009-03-25
GB2448447A (en) 2008-10-15
GB0813328D0 (en) 2008-08-27
WO2005082774A2 (en) 2005-09-09
GB2449189B (en) 2009-03-25
US7352266B2 (en) 2008-04-01
CN101018734A (en) 2007-08-15
GB2427758B (en) 2009-03-25
GB0813331D0 (en) 2008-08-27
GB2427758A (en) 2007-01-03
US20050183938A1 (en) 2005-08-25
US7101724B2 (en) 2006-09-05
GB2448445B (en) 2009-03-25
GB2448447B (en) 2009-03-25
GB0813330D0 (en) 2008-08-27
GB2448445A (en) 2008-10-15
GB0813329D0 (en) 2008-08-27
GB2449189A (en) 2008-11-12

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