WO2005089465A3 - Electromechanical three-trace junction devices - Google Patents

Electromechanical three-trace junction devices Download PDF

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Publication number
WO2005089465A3
WO2005089465A3 PCT/US2005/009026 US2005009026W WO2005089465A3 WO 2005089465 A3 WO2005089465 A3 WO 2005089465A3 US 2005009026 W US2005009026 W US 2005009026W WO 2005089465 A3 WO2005089465 A3 WO 2005089465A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive elements
electromechanical
nanotube ribbon
electrically conductive
elements
Prior art date
Application number
PCT/US2005/009026
Other languages
French (fr)
Other versions
WO2005089465A2 (en
Inventor
Thomas Ruckes
Brent M Segal
Darren K Brock
Original Assignee
Nantero Inc
Thomas Ruckes
Brent M Segal
Darren K Brock
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc, Thomas Ruckes, Brent M Segal, Darren K Brock filed Critical Nantero Inc
Publication of WO2005089465A2 publication Critical patent/WO2005089465A2/en
Publication of WO2005089465A3 publication Critical patent/WO2005089465A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Abstract

Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the first and second conductive elements. The nanotube ribbon is movable toward at least one of the first and second electrically conductive elements in response to electrical stimulus applied to at least one of the first and second electrically conductive elements and the nanotube ribbon. Such circuit may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other of the conductive elements may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.
PCT/US2005/009026 2004-03-17 2005-03-17 Electromechanical three-trace junction devices WO2005089465A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/802,900 2004-03-17
US10/802,900 US7176505B2 (en) 2001-12-28 2004-03-17 Electromechanical three-trace junction devices

Publications (2)

Publication Number Publication Date
WO2005089465A2 WO2005089465A2 (en) 2005-09-29
WO2005089465A3 true WO2005089465A3 (en) 2006-01-26

Family

ID=34994369

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/009026 WO2005089465A2 (en) 2004-03-17 2005-03-17 Electromechanical three-trace junction devices

Country Status (2)

Country Link
US (2) US7176505B2 (en)
WO (1) WO2005089465A2 (en)

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US7176505B2 (en) 2007-02-13

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