WO2006065014A1 - Apparatus and method for thin film deposition - Google Patents
Apparatus and method for thin film deposition Download PDFInfo
- Publication number
- WO2006065014A1 WO2006065014A1 PCT/KR2005/002336 KR2005002336W WO2006065014A1 WO 2006065014 A1 WO2006065014 A1 WO 2006065014A1 KR 2005002336 W KR2005002336 W KR 2005002336W WO 2006065014 A1 WO2006065014 A1 WO 2006065014A1
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- Prior art keywords
- gas
- reaction
- gases
- distribution
- thin film
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 32
- 239000007789 gas Substances 0.000 claims abstract description 346
- 238000006243 chemical reaction Methods 0.000 claims abstract description 229
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000012495 reaction gas Substances 0.000 claims abstract description 73
- 238000009826 distribution Methods 0.000 claims abstract description 67
- 239000010409 thin film Substances 0.000 claims abstract description 47
- 238000005086 pumping Methods 0.000 claims abstract description 28
- 230000000717 retained effect Effects 0.000 claims abstract description 28
- 238000005507 spraying Methods 0.000 claims abstract description 16
- 238000010926 purge Methods 0.000 claims description 41
- 238000005192 partition Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000007921 spray Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 230000001174 ascending effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 24
- 238000000231 atomic layer deposition Methods 0.000 description 17
- 238000010276 construction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- the present invention relates to an apparatus for and a method of depositing a thin film, and more particularly to an apparatus for and a method of depositing a thin film, in which, dissimilar to a conventional technology where a gas supply and exhaust are repeated through the operation of a valve and a pump installed in a reaction chamber, a gas is continuously supplied to the inside of the reaction chamber, and the supplied gas is exposed to respective substrates through a plurality of separate reaction cells and simultaneously excessive gases are continuously exhausted, thereby improving reaction rate and characteristics.
- semiconductor manufacturing processes employ a sputtering, chemical vapor deposition, atomic layer deposition method to thereby form a uniform thin film.
- the chemical vapor deposition method has been most widely used.
- this method using a reaction gas and a decomposition gas, a thin film having a required thickness is deposited on a substrate.
- various gases are injected into a reaction chamber, and the gases derived by a high energy such as heat, light, plasma are chemically reacted to thereby form a thin film having a desired thickness.
- the reaction conditions are controlled through the ratio and amount of plasma or gases applied as much as reaction energy, thus improving the deposition rate thereof.
- the reactions occur fast and thus it is very difficult to control the thermodynamic stability of atoms.
- a reaction gas and a purge gas are alternately supplied to deposit an atomic layer.
- the formed thin film has good film characteristics and can be applied to a large-diameter substrate and an electrode thin film.
- this thin film has a good electrical and physical property.
- a first reaction gas is supplied to chemically adsorb a single layer of first source on the surface of a substrate and excessive physically adsorbed sources are purged by flowing a purge gas.
- a second reaction gas is supplied to the single layered source to chemically react the single layer first source with the second reaction gas to deposit an intended atomic layer and excessive gas is purged by flowing a purge gas.
- the atomic layer deposition method employs a surface reaction mechanism and thus provides a stable and uniform thin film.
- reaction gases are separately supplied and purged in sequence, and thus particle formation can be suppressed through gaseous phase reaction, as compared with the chemical vapor deposition method.
- the deposition occurs through the materials adsorbed on the surface of a substrate (generally, chemical molecules containing the film elements). At this time, generally, the adsorption is self-limited on the substrate, and thus uniformly obtained over the entire substrate, without largely relying on the amount of supplied gas (the amount of reaction gas).
- a uniform thickness film can be obtained even in stepped portions having a very high aspect ratio, regardless of positions. Even in a case of a thin film having a thickness of a few nanometer, the thickness thereof can be easily controlled. In addition, since the thickness of the thin film is in proportion to the gas supply period in the process, the thickness thereof can be adjusted by controlling the frequency of gas supply periods.
- FIG. 1 is a schematic diagram showing the structure of a conventional shower head type atomic layer thin film deposition apparatus.
- FIG. 2 is a schematic diagram showing the structure of a conventional layer behavior type atomic layer thin film deposition apparatus.
- like components are denoted by like reference numerals.
- the conventional shower head type atomic layer deposition apparatus includes a reaction chamber 1 having a reaction furnace 2 where a reaction gas and purge gas is supplied in sequence and an atomic layer is deposited on a substrate 3 and connected to a pumping means for discharging supplied gas to the outside; a substrate chuck 4 provided below the reaction chamber 1 and where the substrate 3 is rested; a shower head type gas supplier 5 provided above the reaction chamber 1 facing the substrate chuck 4 and for spraying gas towards the reaction chamber 2; valves 6, 7, 8 and 9 provided on the supply path of the reaction gas supplier 5 and for opening and closing the gas supply.
- reference numeral 6 denotes a first reaction gas valve
- 7 denotes a purge gas valve
- 8 denotes a second reaction gas valve
- 9 denotes a purge gas valve.
- the conventional layer behavior type atomic layer thin film deposition apparatus includes a reaction chamber 1 having a reaction furnace 2 where a reaction gas and a purge gas are supplied in sequence to deposit an atomic layer; a substrate chuck 4 provided below the reaction chamber 1 to allow a substrate 3 to be rested thereon; and valves 6, 7, 8 and 9 provided respectively in gas supply tubes connected so as to provide a layered form of gas to the reaction chamber 1.
- the reaction chamber 1 is connected with a pumping means for discharging gas supplied to the reaction furnace 2 to the outside.
- reaction gas valve 6 and 8 and the purge gas valve 7 and 9 must be opened and closed every time when one cycle of operation is performed, thus shortening the service life thereof according to the service life of valves.
- time for an appropriate amount of gas to reach the substrate 3 is delayed, due to the valve driving electrical signal associated with the valve operation, a time delay caused during air driving, and conductance generated in the narrow gas tubes.
- reaction chamber 1 since the reaction chamber 1 has a small volume for the purpose of speedy replacement of gas in the reaction chamber 1, the number of the substrate 3 capable of being mounted in the reaction chamber 1 is limited, thus leading to a decreased productivity in mass production.
- the above apparatus includes a plasma generator 10 for exciting plasma in a reaction furnace 2 inside a reaction chamber 1 and having a switch 11 for on and off of an RF power.
- a plasma generator 10 for exciting plasma in a reaction furnace 2 inside a reaction chamber 1 and having a switch 11 for on and off of an RF power.
- an RF power is to be applied, coincidentally when a selected reaction gas is introduced into the reaction chamber and exposed to the substrate 3.
- the RF generator for generating the RF power and the RF matching network for stabilizing plasma have a shortened service life, and the plasma formed without a stabilization time has a decreased efficiency and the atomic layer deposition reaction becomes unstable disadvantageously.
- FIG. 4 shows a conventional thin film deposition apparatus employing a radical generator 12 capable of forming radicals on the line supplying one reaction gas.
- a selected reaction gas is supplied and accumulated inside the radical generator 12 for a short period of time in order to form radicals in an external device and apply the reaction furnace, and, when a valve 13 is opened, the produced radicals are transferred to the reaction furnace 2 simultaneously.
- the present invention has been made to solve the above-described problems occurring in the prior art, and it is an object of the present invention to provide an apparatus for and a method of depositing a thin film, in which, dissimilar to a conventional technology where a gas supply and exhaust are repeated through the operation of a valve and a pump installed in a reaction chamber, a gas is continuously supplied to the inside of the reaction chamber and the supplied gases are retained in a plurality of separate reaction cells, and the substrates are exposed to the retained gas in sequence and simultaneously excessive gases are continuously exhausted, thereby improving reaction rate and characteristics.
- Another object of the invention is to provide an apparatus for and a method of depositing a thin film, which can continuously plasma-excite a desired reaction gas so as to conform to the purpose of a process and simultaneously or selectively radicalize a desired reaction gas, thus improving reaction rate and characteristics.
- the present invention provides a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor.
- the apparatus of the invention comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
- the present invention provides a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor.
- the apparatus of the invention comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means, the gas retaining means being connected at its central portion with the lower end of the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence, the reaction cell being integrally rotated together with the gas distribution means; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
- the present invention provides a thin film deposition apparatus having a reaction chamber for forming an atomic layer on a plurality of substrates rested on a susceptor.
- the apparatus of the invention comprises: a gas supply means for supplying two or more reaction gases (a first reaction gas, a second reaction gas) and a purge gas to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means, in the order of the first reaction gas, the purge gas, the second reaction gas, the purge gas; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
- a gas supply means for supplying two or more reaction gases (a first reaction gas, a
- the present invention provides a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor.
- the apparatus of the invention comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the susceptor such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
- the respective gases required for depositing a thin film are continuously supplied and exhausted simultaneously, and the substrates are exposed in sequence to the gases continuously supplied to the inside of the reaction cell, which has a minimal reaction space, thereby forming a thin film. Therefore, durability of the apparatus and productivity can be significantly improved, without repeated operation of valves for supplying and shutting down the gases.
- the present invention having the above features is divided into a reaction cell rotation mode and a susceptor rotation mode.
- a reaction cell rotation mode while a gas retainer means is rotated, gases retained in a reaction cell are exposed sequentially to a substrate on a fixed susceptor.
- the susceptor rotation mode while a susceptor is rotated, gases retained in a fixed reaction cell are exposed sequentially to a rotating substrate. Both modes are operated by the same principle, and thus hereafter the invention will be explained, referring to embodiments according to the former.
- the present invention may be applied to a common chemical vacuum vapor deposition apparatus. But, when it is applied to an atomic layer deposition apparatus, the features become clearer.
- the present invention will be described, referring to an atomic layer deposition apparatus using two reaction gases and one purge gas.
- the atomic layer deposition apparatus according to an embodiment of the invention is divided into a layered behavior type and a shower head type, depending on the flowing direction of gases supplied onto the substrate.
- the former is explained and the latter will be explained with respect to differences from the former.
- FIG. 1 is a schematic diagram showing the structure of a conventional shower head type atomic layer thin film deposition apparatus
- FIG. 2 is a schematic diagram showing the structure of a conventional layer behavior type atomic layer thin film deposition apparatus
- FIG. 3 is a schematic diagram showing the structure of FIG. 2 where a plasma excitation means is further provided;
- FIG. 4 is a schematic diagram showing the structure of FIG. 2 where a radical generator is further provided;
- FIG. 5 is a schematic cross-section showing a thin film deposition apparatus according to an embodiment of the invention.
- FIG. 6 is a schematic cross-section taken along the line A-A in FIG. 5;
- FIG. 7 is an exploded sectional view showing the structure of a reaction cell in
- FIG. 5 A first figure.
- FIG. 8 is a schematic sectional view taken along the line B-B in FIG. 7, showing a gas distribution means
- FIG. 9 is a schematic view showing the flow of reaction gas in a thin film deposition apparatus according to an embodiment of the invention.
- FIG. 10 is a schematic view showing the flow of purge gas in a thin film deposition apparatus according to an embodiment of the invention. Best Mode for Carrying Out the Invention
- FIG. 5 is a schematic sectional view of a thin film deposition apparatus employing a rotary reaction cell mode and a layer behavior mode according to an embodiment of the invention.
- a substrate entrance and exit 110 is formed at a side of a reaction chamber 100, and a heater 210 for heating a substrate is installed in a susceptor, on which a plurality of substrates supplied through the substrate entrance and exit 110 is rested.
- the susceptor having the above construction ascends and descents, and rotates by means of a susceptor rotation shaft 220, which is connected to the lower portion of the susceptor 200 in order to load and unload a substrate.
- This construction is well known, and thereinafter new features of the invention will be described in detail.
- a gas supply means 300 is provided.
- a cylindrical supply main body 310 is air- tightly and fixedly installed in the upper center of the reaction chamber 100.
- gas supply ports 312a, 312b and 312c are formed in the lateral side thereof.
- the respective gas supply ports 312a, 312b and 312c are connected respectively to annular grooves 314a, 314b and 314c formed in the inner peripheral face of the supply main body 310.
- a rotation shaft 320 is inserted in the center of the supply main body 310.
- the rotation shaft 320 is rotated by means of an external rotational driver means (not shown).
- the rotation shaft 320 is provided with gas passageways 322a, 322b and 322c formed vertical-downwardly thereinside so as to be fluid-communicated with the respective annular grooves 314a, 314b, and 314c, be extended to the inside of the reaction chamber 100, and be spaced apart from one another.
- the respective gases supplied from the lateral side of the supply main body 310 are provided to a gas distribution means 400 through the gas passageways 322a, 322b and 322c, even when the rotation shaft 320 rotates.
- the gas distribution means 400 is placed at the lower side of the supply main body 310.
- the supply main body 310 and the rotation shaft 320 are air-tightly coupled to each other through a sealing using a magnetic fluid or a mechanical sealing such as an Eric sealing method. Details thereon are well known and thus will not be described here.
- a rotational driver means (not shown) for rotationally driving the rotation shaft 320
- a stepping motor which has an encoder for controlling the rotation frequency and speed of a driving motor.
- the processing time for one cycle of a reaction cell 510 is controlled by means of the encoder.
- FIG. 5 a partial detailed view
- FIG. 7 and FIG. 8 a perspective view showing a cross-section taken along the line B-B in FIG. 7
- a distribution main body 410 constituting the gas distribution means 400 is fixed to the lower end of the rotation shaft 320 constituting the gas supply means 300.
- gas inlet ports 412a, 412b and 412c are formed to be connected to the respective gas passageways 322a, 322b and 322c.
- a plurality of distribution chambers 414 is formed to isolate the respective gases flowing in through the respective gas inlet ports 412a, 412b and 412c so as not to be mixed with each other.
- the distribution main body 410 is formed in a circular plate having a certain desired thickness, but not limited thereto, may have various other shapes.
- the distribution chamber 414 and the gas passageways 322c for supplying a purge gas are constructed so as to be fluid-communicated with each other, but the gas passageway 322c for supplying the purge gas may be divided such that the purge gas can be supplied to each individual distribution chamber 414.
- the distribution chamber 414 is disposed around the center thereof adjacent to one another in the order of a first reaction gas, a purge gas, and the second reaction gas and the purge gas, and is installed, correspondingly to the reaction cell 510, which will be described hereinafter.
- the respective distribution chamber 414 is fluid-communicated with a lateral spray port 416 formed in the lateral face of the distribution main body 410 such that the respective gases flowing in through the gas supply port 312a, 312b and 312c can be sprayed to the reaction cell 510.
- the distribution chamber 414 to which a purge gas is supplied, is provided with a downward spray port 418 formed at the lower portion thereof such that the gas can be sprayed vertical- downwardly.
- the sprayed gas serves as a gas curtain such that gases supplied inside the reaction cell 510 cannot be mixed with each other.
- the lateral spray port 416 and the downward spray port 418 are illustrated in the form of a hole, but not limited thereto, for example, may have the form of a slit opened along the outer peripheral face thereof.
- a gas retaining means 500 is formed of a plurality of reaction cells 510 in the periphery of the distribution main body 410.
- each reaction cell 510 means a space partitioned by a plurality of partition walls 514, which are installed at regular intervals below a disk-shaped upper plate 512.
- the respective reaction cells 510 are supplied with gases distributed from the distribution chamber 414, which is formed inside the distribution main body 410.
- the reaction cell 510 having the above-described construction can minimize the space substantially involved in the formation of a thin film on a substrate.
- the density of gas exposed to the substrate is increased, thus enabling a thin film deposition reaction in a short period of time, and also minimizing the amount of gas supplied.
- the upper plate 512 functions to prevent the gas from being diffused upwardly and simultaneously to prevent formation of particle, which may be caused by accumulation of thin film on the top surface of the reaction chamber 100.
- the upper plate 512 may have various forms so as to conform to the purpose of process.
- the upper plate 512 may have a circular disk form so as to block the top of the entire reaction cell 510.
- only the portion corresponding to the top of the upper plate 512 that a purge gas is supplied may be opened such that the purge gas can flow to the upper space of the reaction chamber 100.
- reaction cells 510 are formed at angular intervals of 90 degrees in the form of a fan, but not limited thereto. That is, depending on the purpose or characteristics of a process, eight reaction cells may be formed at angular intervals of 45 degrees or two reaction cells may be formed at angular intervals of 180 degrees. In addition, each reaction cell 510 may have a different size.
- Each partition wall 514 is designed such that its direction corresponds to the lateral spray port 416 of the gas distribution means 400.
- the partition wall 514 is installed in a radial direction in the bottom face of the circular upper plate 512 so that the gas can flow in the radial direction.
- the invention is not limited to the above construction, but the partition wall 514 may be installed in various other ways.
- the partition wall 514 may be installed in a spiral fashion so as to correspond to the rotation direction of the reaction cell 510, so that the gas can flow more uniformly.
- the surface adsorption rate for vapor-depositing an atomic layer thin film is determined in proportion to a partial pressure of the reaction gases and the exposure time thereof.
- the outer peripheral wall 518 functions to delay exhaust of the reaction gases to increase their partial pressures, and consequently the surface adsorption rate can be improved.
- an extension plate 516 may be further provided in the lower end of the partition wall 514 formed to be extended in parallel to the susceptor 200.
- the upper plate 512, the partition wall 514, the outer peripheral wall 518 and the extension plate 516 may be integrally formed or assembled to have the above- described construction. These are to be firmly connected to one another so as not to be separated by the centrifugal force of the reaction cell 510.
- the spacing between the extension plate 516 and the substrate is as narrow as possible. However, in order to minimize gas mixing between the reaction cells 510, the above spacing is to be maintained to below at least 3mm, but the extension plate 516 and the substrate must not contact each other.
- connection grooves 420 is formed in the lateral side of the distribution main body 410, and a connection protrusion 520 having a shape corresponding to that of the connection groove is formed in one end portion of the partition wall 514.
- the connection groove 420 and the connection protrusion 520 are connected to each other so as not to be released from each other due to a centrifugal force.
- connection means may be modified in various ways using a bolt or a clamp or the like.
- a shower head type thin film deposition apparatus has substantially the same configuration as the above-described layer behavior type thin film deposition apparatus, except for the structure of a gas retaining means.
- the shower head type apparatus is provided with a desired space capable of accommodating the respective gases distributed from the gas distribution means 400, and may be provided with a plurality of shower heads for spraying the accommodated gases vertical-downwardly through a plurality of spray ports formed in the bottom face thereof.
- a plurality of partition walls 514 is formed in the bottom face of each shower head at regular intervals so as to form a reaction cell 510 corresponding thereto.
- the above-described outer peripheral wall 518 and extension plate 516 may be provided.
- the shower head type thin film deposition apparatus is operated in the same manner as the previous layer behavior type apparatus, except for the gas supply direction with respect to the substrate.
- the gas exhaust means 600 is composed of a restriction plate 120 formed along the inner peripheral face of the reaction chamber 100 and a plurality of pumping cells 610 for exhausting the gases existing between the respective reaction cells 510.
- the restriction plate 120 prevents the reaction gases from flowing into a space below the susceptor 200, thus restricting the actual reaction space in the internal space of the reaction chamber 100.
- Each pumping cell 610 is partitioned, correspondingly to the outer peripheral length of the reaction cell 510 so that different reaction gases cannot be sectioned simultaneously. In this way, particle formation can be avoided, which may be caused by mixing of gases due to simultaneous suction of a first reaction gas and the second reaction gas among the excessive gases flowing out from the respective reaction cells 510. That is, at a certain time point, gases suctioned to the pumping cell 610 must be one kind of reaction gas and a purge gas. Thus, in the case where four reaction cells 510 are provided, the length of each pumping cell 610 must be shorter than the peripheral length of the reaction cell 510. Of course, four or more reaction cells may be provided, while meeting the above conditions.
- Each pumping cell 610 includes a primary exhaust passageway 612 corresponding to a space between the upper portion of the restriction plate 120 and the periphery of the reaction cell 510, a separation plate 614 having a plurality of through- holes 616 formed thereabove, and a secondary exhaust passageway 618 formed thereabove and connected with an exhaust port 620.
- the exhaust passageways 612 and 618 are formed in a double structure and a separation plate 614 having a plurality of through-holes 616 is installed in-between.
- the gas flowing the whole outer peripheral area of the reaction cell 510 can have a uniform suction force.
- the film deposition apparatus of the invention having the above-described construction may be provided with a plasma excitation means and a radical generation means. This construction differs from the conventional ones in that they are operated while a continuous gas supply is carried out.
- the plasma excitation means (not shown) is provided to at least one reaction cell 510, which is one supplied with a reaction gas, in such a way that an external RF power application device (not shown) is electrically connected thereto.
- the RF power application device is connected through the rotation shaft 320 with an electrical conductive member (not shown), which is attached to the bottom face of the upper plate 512, which corresponds to the top of a substrate in the reaction cell 510.
- the RF power application device is connected with an electrical conductive member (not shown) attached to the bottom face of the shower head.
- 200 is preferred to be formed of graphite materials or silicon carbide materials having an electrical conductance.
- the gas inside of a certain specific reaction cell 510 connected with the RF power application device remains in plasma- excited state, and, dissimilar to the conventional apparatuses, it is not necessary that plasma is excited every time when a specific gas is supplied.
- the radical generation means (not shown) only have to radicalize at least one reaction gas among the gases supplied from the gas supply means 300, and the radicalized reaction gas is continuously supplied to the inside of the particular reaction cell 510.
- the above-constructed plasma excitation means and radical generation means may be used separately or together, depending on the purpose of a process.
- the RF power application device and the radical generator (for example, Reactive Gas Generator manufactured by MKS Instruments Inc.) are well known to those skilled in the art and thus details thereon will not be described here.
- the substrate is heated up to the temperature needed for reaction by means of a heater 210 installed below the susceptor 200.
- a first and second reaction gases and a purge gas are supplied from the outside through gas supply ports 312a, 312b and 312c formed in the gas supply means 300.
- the supplied gases is provided to the gas distribution means 400 via the annular grooves 314a, 314b and 314c and the gas passageways 322a, 322b and 322c in sequence (S4).
- steps (3) and (4) may be switched, or performed simultaneously, or performed at regular time intervals, depending on the operation conditions.
- the gases are supplied to the inside of the reaction cell 510 through a plurality of spray ports formed in the bottom face of the shower head.
- the substrate is exposed to the first reaction gas, the purge gas, the second reaction gas, the purge gas, and the first reaction gas repeatedly in sequence. That is, while the reaction cell 510 rotates one cycle, all the substrates on the susceptor 200 experience one cycle of gas exposure, and thus forming a primary thin film.
- the rotation frequency of the reaction cell 510 is the same as the cycle number of the atomic layer deposition. Therefore, since the deposition thickness per one cycle is uniform, the entire thickness of the atomic layer thin film can be adjusted by controlling the rotating frequency of the reaction cell 510.
- the gas is exhausted to the outside through the primary exhaust passageway 612, the through-hole 616 formed in the separation plate 614, the secondary exhaust passageway 618 and the exhaust port 620.
- the respective pumping cells 610 are partitioned to the length corresponding to the outer peripheral length of the reaction cell 510.
- the first and second reaction gases are not suctioned simultaneously. If the length of the pumping cell 610 is larger than the spacing of the outer periphery of the reaction cell 510, different reaction gases may be suctioned through an identical exhaust port 620. In this case, the reaction gases may be reacted with each other to form particles, thus degrading the surface characteristics of formed thin films.
- reaction cells 510 At least four reaction cells 510 must be provided.
- a first reaction gas, a purge gas, a second reaction gas, and a purge gas must be supplied to each neighboring reaction cells 510 in the described order.
- a composite layer of Al O and HfO at least eight reaction cells 510 must be provided, and a reaction cell, to which a purge gas is supplied, must be disposed between the reaction cells 510, to which a reaction gas is supplied.
- Al(CH ) must be supplied to the reaction cell 1
- an inert gas Ar, N , Xe, etc
- one of O , O , H O must be supplied to the reaction cell 3
- an inert gas Ar, N , Xe, etc.
- HfCl must be supplied to the reaction cell 5
- an inert gas Ar, N , Xe, etc.
- the respective gases required for depositing a thin film are continuously supplied and exhausted simultaneously, and the substrates are exposed in sequence to the gases continuously supplied to the inside of the reaction cell, which has a minimal reaction space, thereby forming a thin film. Therefore, durability of the apparatus and productivity can be significantly improved, without repeated operation of valves for supplying and shutting down the gases.
Abstract
Description
Claims
Priority Applications (2)
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JP2007546549A JP4629110B2 (en) | 2004-12-16 | 2005-07-20 | Thin film deposition apparatus and method |
US10/559,944 US8092598B2 (en) | 2004-12-16 | 2005-07-20 | Apparatus and method for thin film deposition |
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KR1020040106963A KR100558922B1 (en) | 2004-12-16 | 2004-12-16 | Apparatus and method for thin film deposition |
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US (1) | US8092598B2 (en) |
JP (1) | JP4629110B2 (en) |
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Also Published As
Publication number | Publication date |
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CN100481329C (en) | 2009-04-22 |
JP2008524842A (en) | 2008-07-10 |
US8092598B2 (en) | 2012-01-10 |
JP4629110B2 (en) | 2011-02-09 |
CN101076878A (en) | 2007-11-21 |
US20070095286A1 (en) | 2007-05-03 |
KR100558922B1 (en) | 2006-03-10 |
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