WO2006110204A3 - Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same - Google Patents

Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same Download PDF

Info

Publication number
WO2006110204A3
WO2006110204A3 PCT/US2006/004353 US2006004353W WO2006110204A3 WO 2006110204 A3 WO2006110204 A3 WO 2006110204A3 US 2006004353 W US2006004353 W US 2006004353W WO 2006110204 A3 WO2006110204 A3 WO 2006110204A3
Authority
WO
WIPO (PCT)
Prior art keywords
insulating
gan
semiconductor device
epitaxial layer
semi
Prior art date
Application number
PCT/US2006/004353
Other languages
French (fr)
Other versions
WO2006110204A2 (en
Inventor
Adam William Saxler
Yifeng Wu
Primit Parikh
Umesh Mishra
Richard Peter Smith
Scott T Sheppard
Original Assignee
Cree Inc
Adam William Saxler
Yifeng Wu
Primit Parikh
Umesh Mishra
Richard Peter Smith
Scott T Sheppard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Adam William Saxler, Yifeng Wu, Primit Parikh, Umesh Mishra, Richard Peter Smith, Scott T Sheppard filed Critical Cree Inc
Priority to JP2008506448A priority Critical patent/JP5465876B2/en
Priority to EP06720460.2A priority patent/EP1869710B1/en
Publication of WO2006110204A2 publication Critical patent/WO2006110204A2/en
Publication of WO2006110204A3 publication Critical patent/WO2006110204A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Abstract

Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 µm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 µm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer.
PCT/US2006/004353 2005-04-11 2006-02-08 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same WO2006110204A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008506448A JP5465876B2 (en) 2005-04-11 2006-02-08 Thick semi-insulating or insulating epitaxial gallium nitride layer and devices incorporating it
EP06720460.2A EP1869710B1 (en) 2005-04-11 2006-02-08 Thick semi-insulating or insulating epitaxial gallium nitride layer and devices incorporating same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/103,117 US8575651B2 (en) 2005-04-11 2005-04-11 Devices having thick semi-insulating epitaxial gallium nitride layer
US11/103,117 2005-04-11

Publications (2)

Publication Number Publication Date
WO2006110204A2 WO2006110204A2 (en) 2006-10-19
WO2006110204A3 true WO2006110204A3 (en) 2007-03-29

Family

ID=36942646

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/004353 WO2006110204A2 (en) 2005-04-11 2006-02-08 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same

Country Status (5)

Country Link
US (2) US8575651B2 (en)
EP (1) EP1869710B1 (en)
JP (1) JP5465876B2 (en)
TW (1) TWI520331B (en)
WO (1) WO2006110204A2 (en)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612390B2 (en) 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
JP4514584B2 (en) * 2004-11-16 2010-07-28 富士通株式会社 Compound semiconductor device and manufacturing method thereof
US7405430B2 (en) * 2005-06-10 2008-07-29 Cree, Inc. Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
US9331192B2 (en) 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US7338826B2 (en) * 2005-12-09 2008-03-04 The United States Of America As Represented By The Secretary Of The Navy Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs
EP1972008B1 (en) * 2006-01-10 2020-05-13 Cree, Inc. Silicon carbide dimpled substrate
JP5099008B2 (en) * 2006-07-26 2012-12-12 富士通株式会社 Compound semiconductor device using SiC substrate and manufacturing method thereof
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP4531071B2 (en) * 2007-02-20 2010-08-25 富士通株式会社 Compound semiconductor device
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8461626B2 (en) * 2007-07-09 2013-06-11 Freescale Semiconductor, Inc. Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
JP5100413B2 (en) * 2008-01-24 2012-12-19 株式会社東芝 Semiconductor device and manufacturing method thereof
CN101604704B (en) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 HEMT device and manufacturing method thereof
KR101167651B1 (en) * 2008-10-29 2012-07-20 후지쯔 가부시끼가이샤 Compound semiconductor device and method for manufacturing the same
WO2010051536A1 (en) * 2008-10-31 2010-05-06 The Regents Of The University Of California Method of fabricating semi-insulating gallium nitride using an aluminum gallium nitride blocking layer
JP4305574B1 (en) * 2009-01-14 2009-07-29 住友電気工業株式会社 Group III nitride substrate, semiconductor device including the same, and method of manufacturing surface-treated group III nitride substrate
JP5013218B2 (en) * 2009-02-05 2012-08-29 日立電線株式会社 Manufacturing method of semiconductor epitaxial wafer and manufacturing method of field effect transistor
JP5564842B2 (en) 2009-07-10 2014-08-06 サンケン電気株式会社 Semiconductor device
JP5284472B2 (en) 2009-07-22 2013-09-11 パナソニック株式会社 Light emitting diode
US8598713B2 (en) * 2009-07-22 2013-12-03 Newport Fab, Llc Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation
JP5365454B2 (en) * 2009-09-30 2013-12-11 住友電気工業株式会社 Group III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
US20110108854A1 (en) * 2009-11-10 2011-05-12 Chien-Min Sung Substantially lattice matched semiconductor materials and associated methods
JP5789967B2 (en) * 2010-12-03 2015-10-07 富士通株式会社 Semiconductor device, manufacturing method thereof, and power supply device
JP5604147B2 (en) * 2010-03-25 2014-10-08 パナソニック株式会社 Transistor and manufacturing method thereof
JP2012199398A (en) * 2011-03-22 2012-10-18 Sumitomo Electric Ind Ltd COMPOUND GaN SUBSTRATE, MANUFACTURING METHOD OF THE SAME, GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
US8723222B2 (en) 2011-07-19 2014-05-13 Electronics And Telecommunications Research Institute Nitride electronic device and method for manufacturing the same
JP6035721B2 (en) * 2011-09-27 2016-11-30 住友電気工業株式会社 Manufacturing method of semiconductor device
US8791504B2 (en) * 2011-10-20 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate breakdown voltage improvement for group III-nitride on a silicon substrate
JP6035468B2 (en) * 2012-07-03 2016-11-30 アールエフエイチアイシー コーポレイション Semiconductor-on-diamond wafer handle and manufacturing method
KR20140021746A (en) * 2012-08-09 2014-02-20 삼성전자주식회사 Semiconductor device and method of manufacturing the same
JPWO2014041736A1 (en) * 2012-09-13 2016-08-12 パナソニックＩｐマネジメント株式会社 Nitride semiconductor structure
JP6121806B2 (en) 2013-06-07 2017-04-26 株式会社東芝 Nitride semiconductor wafer, nitride semiconductor device, and method of manufacturing nitride semiconductor wafer
JP6248359B2 (en) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 Semiconductor layer surface treatment method
US9837411B2 (en) * 2015-07-14 2017-12-05 Tower Semiconductors Ltd. Semiconductor die with a metal via
US9570438B1 (en) 2015-08-04 2017-02-14 Infineon Technologies Austria Ag Avalanche-rugged quasi-vertical HEMT
US9685545B2 (en) * 2015-11-25 2017-06-20 Texas Instruments Incorporated Isolated III-N semiconductor devices
US9947610B2 (en) * 2016-01-28 2018-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for manufacturing the same
DE102018107293A1 (en) * 2018-03-27 2019-10-02 Osram Opto Semiconductors Gmbh PROCESS FOR MACHINING A SEMICONDUCTOR LAYER AND OPTOELECTRONIC SEMICONDUCTOR CHIP
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
CN111430218B (en) * 2019-01-09 2022-11-25 北京大学东莞光电研究院 Method for preparing GaN single crystal substrate through self-separation
US20200266292A1 (en) * 2019-02-19 2020-08-20 AZ Power, Inc Composite substrates of conductive and insulating or semi-insulating silicon carbide for gallium nitride devices
CN110828298A (en) * 2019-11-14 2020-02-21 济南晶正电子科技有限公司 Single crystal thin film composite substrate and method for manufacturing same
TWI745110B (en) 2020-10-06 2021-11-01 環球晶圓股份有限公司 Semiconductor substrate and method of manufacturing the same
US20220173234A1 (en) * 2020-12-01 2022-06-02 Texas Instruments Incorporated Normally-on gallium nitride based transistor with p-type gate
JPWO2022176051A1 (en) * 2021-02-17 2022-08-25
WO2023008031A1 (en) * 2021-07-26 2023-02-02 ローム株式会社 Nitride semiconductor device and manufacturing method therefor

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362678A (en) * 1990-06-05 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing insulated via hole structure for semiconductor device
US6046464A (en) * 1995-03-29 2000-04-04 North Carolina State University Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
US20020017648A1 (en) * 2000-06-29 2002-02-14 Kensuke Kasahara Semiconductor device
US6396085B1 (en) * 2000-04-25 2002-05-28 The Furukawa Electric Co., Ltd GaN-type semiconductor vertical field effect transistor
US20020125506A1 (en) * 2001-03-06 2002-09-12 Seikoh Yoshida Semiconductor device and GaN-based field effect transistor for use in the same
US6476431B1 (en) * 1998-11-11 2002-11-05 Nec Corporation Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
WO2004097941A1 (en) * 2003-05-02 2004-11-11 Koninklijke Philips Electronics N.V. Electronic device comprising a field-effect transistor for high-frequency applications
US20050001235A1 (en) * 2003-05-15 2005-01-06 Tomohiro Murata Semiconductor device

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2465317A2 (en) * 1979-03-28 1981-03-20 Thomson Csf FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
JPS61187371A (en) 1985-02-15 1986-08-21 Hitachi Ltd Semiconductor device and manufacture thereof
JPH088350B2 (en) * 1985-04-08 1996-01-29 日本電気株式会社 Semiconductor device
US4755867A (en) * 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
US4788156A (en) * 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
EP0334006A1 (en) 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Stacked channel heterojunction fet
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5053348A (en) * 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5200022A (en) * 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
JP3108447B2 (en) 1991-03-08 2000-11-13 富士通株式会社 Semiconductor device and manufacturing method thereof
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (en) * 1991-12-18 2002-12-03 浩 天野 Gallium nitride based semiconductor device and method of manufacturing the same
EP0549373B1 (en) * 1991-12-25 1995-05-17 Nec Corporation Tunnel transistor and method of manufacturing same
JPH05275463A (en) 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPH05326561A (en) * 1992-05-22 1993-12-10 Nec Corp Manufacture of field effect transistor
JPH06267991A (en) * 1993-03-12 1994-09-22 Hitachi Ltd Semiconductor device and its manufacture
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
JP3157690B2 (en) * 1995-01-19 2001-04-16 沖電気工業株式会社 Method for manufacturing pn junction element
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
SE9501311D0 (en) * 1995-04-10 1995-04-10 Abb Research Ltd Method of producing a semiconductor device having a semiconductor layer of SiC
US6002148A (en) * 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
KR100195269B1 (en) * 1995-12-22 1999-06-15 윤종용 Manufacture method of liquid crystal display device
US5915164A (en) * 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
DE19600116C2 (en) * 1996-01-03 2001-03-15 Siemens Ag Double heterostructure HEMT
JPH1050982A (en) 1996-07-31 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US6936839B2 (en) * 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
US6533874B1 (en) * 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6448648B1 (en) * 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
JPH10335637A (en) * 1997-05-30 1998-12-18 Sony Corp Hetero-junction field effect transistor
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3168968B2 (en) * 1997-12-22 2001-05-21 日本電気株式会社 Field effect transistor and manufacturing method thereof
JP3372470B2 (en) * 1998-01-20 2003-02-04 シャープ株式会社 Nitride III-V compound semiconductor device
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6608327B1 (en) * 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JPH11261053A (en) 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The High electron mobility transistor
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
JP3209270B2 (en) * 1999-01-29 2001-09-17 日本電気株式会社 Heterojunction field effect transistor
US6582906B1 (en) * 1999-04-05 2003-06-24 Affymetrix, Inc. Proportional amplification of nucleic acids
US6518637B1 (en) * 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6639255B2 (en) * 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP4592938B2 (en) 1999-12-08 2010-12-08 パナソニック株式会社 Semiconductor device
US6380108B1 (en) * 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP3365380B2 (en) 1999-12-27 2003-01-08 日本電気株式会社 High frequency semiconductor device and manufacturing method thereof
JP3393602B2 (en) * 2000-01-13 2003-04-07 松下電器産業株式会社 Semiconductor device
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
JP4667556B2 (en) * 2000-02-18 2011-04-13 古河電気工業株式会社 Vertical GaN-based field effect transistor, bipolar transistor and vertical GaN-based field effect transistor manufacturing method
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
JP4809515B2 (en) 2000-04-19 2011-11-09 Ｏｋｉセミコンダクタ株式会社 Field effect transistor and manufacturing method thereof
JP4022708B2 (en) 2000-06-29 2007-12-19 日本電気株式会社 Semiconductor device
US6515316B1 (en) * 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
DE10042947A1 (en) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component based on GaN
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP3428962B2 (en) * 2000-12-19 2003-07-22 古河電気工業株式会社 GaN based high mobility transistor
US6593193B2 (en) * 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US6646293B2 (en) * 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7230284B2 (en) * 2001-07-24 2007-06-12 Cree, Inc. Insulating gate AlGaN/GaN HEMT
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
JP3986887B2 (en) * 2002-05-17 2007-10-03 松下電器産業株式会社 Semiconductor device
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US6841001B2 (en) * 2002-07-19 2005-01-11 Cree, Inc. Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US6884704B2 (en) * 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
JP4748498B2 (en) * 2002-12-05 2011-08-17 古河電気工業株式会社 GaN-based semiconductor device with current breaker
JP2004363563A (en) 2003-05-15 2004-12-24 Matsushita Electric Ind Co Ltd Semiconductor device
JP4746825B2 (en) * 2003-05-15 2011-08-10 富士通株式会社 Compound semiconductor device
US7170095B2 (en) 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362678A (en) * 1990-06-05 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing insulated via hole structure for semiconductor device
US6046464A (en) * 1995-03-29 2000-04-04 North Carolina State University Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
US6476431B1 (en) * 1998-11-11 2002-11-05 Nec Corporation Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same
US6396085B1 (en) * 2000-04-25 2002-05-28 The Furukawa Electric Co., Ltd GaN-type semiconductor vertical field effect transistor
US20020017648A1 (en) * 2000-06-29 2002-02-14 Kensuke Kasahara Semiconductor device
US20020125506A1 (en) * 2001-03-06 2002-09-12 Seikoh Yoshida Semiconductor device and GaN-based field effect transistor for use in the same
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
WO2004097941A1 (en) * 2003-05-02 2004-11-11 Koninklijke Philips Electronics N.V. Electronic device comprising a field-effect transistor for high-frequency applications
US20050001235A1 (en) * 2003-05-15 2005-01-06 Tomohiro Murata Semiconductor device

Also Published As

Publication number Publication date
US9224596B2 (en) 2015-12-29
TW200636999A (en) 2006-10-16
JP5465876B2 (en) 2014-04-09
EP1869710A2 (en) 2007-12-26
US20060226412A1 (en) 2006-10-12
WO2006110204A2 (en) 2006-10-19
US20130344687A1 (en) 2013-12-26
US8575651B2 (en) 2013-11-05
JP2008536332A (en) 2008-09-04
TWI520331B (en) 2016-02-01
EP1869710B1 (en) 2020-08-05

Similar Documents

Publication Publication Date Title
WO2006110204A3 (en) Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same
TW200636983A (en) Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
WO2007053339A3 (en) Method for forming a semiconductor structure and structure thereof
US20040070003A1 (en) Semiconductor structure having a textured nitride-based layer
WO2008112097A3 (en) Nitride semiconductor structures with interlayer structures and methods of fabricating nitride semiconductor structures with interlayer structures
EP2325871A3 (en) Semiconductor device and method of manufacturing the same
WO2006104877A3 (en) Method for reducing dielectric overetch using a dielectric etch stop at a planar surface
WO2007049939A8 (en) Semiconductor device and method of fabricating the same
WO2010151857A3 (en) Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
WO2004059808A3 (en) Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices
EP1998376A4 (en) Compound semiconductor device and process for producing the same
EP2256799A3 (en) Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
WO2008057671A3 (en) Electronic device including a conductive structure extending through a buried insulating layer
WO2007053686A3 (en) Monolithically integrated semiconductor materials and devices
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
TW200711065A (en) Semiconductor device and manufacturing method thereof
WO2006110511A3 (en) GaN-BASED HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MAKING THE SAME
WO2006011936A3 (en) Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
TW200707803A (en) Nitride based semiconductor element and method for fabricating the same
EP2040301A3 (en) Semiconductor device and method of manufacturing the same
TW200515474A (en) Semiconductor device and fabrication method thereof
WO2005013339A3 (en) Methods of forming conductive structures including titanium-tungsten base layers and related structures
WO2010141351A3 (en) Wafer bonding technique in nitride semiconductors
WO2008103331A3 (en) Wide-bandgap semiconductor devices
TW200731537A (en) Semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2006720460

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2008506448

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: RU