WO2006116249A3 - Device packages having a iii-nitride based power semiconductor device - Google Patents

Device packages having a iii-nitride based power semiconductor device Download PDF

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Publication number
WO2006116249A3
WO2006116249A3 PCT/US2006/015376 US2006015376W WO2006116249A3 WO 2006116249 A3 WO2006116249 A3 WO 2006116249A3 US 2006015376 W US2006015376 W US 2006015376W WO 2006116249 A3 WO2006116249 A3 WO 2006116249A3
Authority
WO
WIPO (PCT)
Prior art keywords
iii
semiconductor device
nitride based
power semiconductor
based power
Prior art date
Application number
PCT/US2006/015376
Other languages
French (fr)
Other versions
WO2006116249A2 (en
Inventor
Mark Pavier
Norman Glyn Connah
Original Assignee
Int Rectifier Corp
Mark Pavier
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp, Mark Pavier filed Critical Int Rectifier Corp
Priority to PCT/US2006/015376 priority Critical patent/WO2006116249A2/en
Publication of WO2006116249A2 publication Critical patent/WO2006116249A2/en
Publication of WO2006116249A3 publication Critical patent/WO2006116249A3/en

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Abstract

A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.
PCT/US2006/015376 2005-04-25 2006-04-25 Device packages having a iii-nitride based power semiconductor device WO2006116249A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2006/015376 WO2006116249A2 (en) 2005-04-25 2006-04-25 Device packages having a iii-nitride based power semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67461605P 2005-04-25 2005-04-25
US60/674,616 2005-04-25
PCT/US2006/015376 WO2006116249A2 (en) 2005-04-25 2006-04-25 Device packages having a iii-nitride based power semiconductor device

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WO2006116249A2 WO2006116249A2 (en) 2006-11-02
WO2006116249A3 true WO2006116249A3 (en) 2007-10-18

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US6255722B1 (en) * 1998-06-11 2001-07-03 International Rectifier Corp. High current capacity semiconductor device housing
US6380569B1 (en) * 1999-08-10 2002-04-30 Rockwell Science Center, Llc High power unipolar FET switch
US6597063B1 (en) * 1997-12-08 2003-07-22 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same
US20050012541A1 (en) * 2000-02-08 2005-01-20 The Furukawa Electric Co., Ltd. Apparatus and circuit for power supply, and apparatus for controlling large current load

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US6597063B1 (en) * 1997-12-08 2003-07-22 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same
US6255722B1 (en) * 1998-06-11 2001-07-03 International Rectifier Corp. High current capacity semiconductor device housing
US6380569B1 (en) * 1999-08-10 2002-04-30 Rockwell Science Center, Llc High power unipolar FET switch
US20050012541A1 (en) * 2000-02-08 2005-01-20 The Furukawa Electric Co., Ltd. Apparatus and circuit for power supply, and apparatus for controlling large current load

Also Published As

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