WO2006132818A3 - Starting program voltage shift with cycling of non-volatile memory - Google Patents

Starting program voltage shift with cycling of non-volatile memory Download PDF

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Publication number
WO2006132818A3
WO2006132818A3 PCT/US2006/020375 US2006020375W WO2006132818A3 WO 2006132818 A3 WO2006132818 A3 WO 2006132818A3 US 2006020375 W US2006020375 W US 2006020375W WO 2006132818 A3 WO2006132818 A3 WO 2006132818A3
Authority
WO
WIPO (PCT)
Prior art keywords
period
initial value
cycling
volatile memory
program voltage
Prior art date
Application number
PCT/US2006/020375
Other languages
French (fr)
Other versions
WO2006132818A2 (en
Inventor
Jeffrey W Lutze
Original Assignee
Sandisk Corp
Jeffrey W Lutze
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp, Jeffrey W Lutze filed Critical Sandisk Corp
Priority to EP06771257.0A priority Critical patent/EP1886319B1/en
Priority to JP2008514710A priority patent/JP4931915B2/en
Priority to CN2006800197390A priority patent/CN101213613B/en
Publication of WO2006132818A2 publication Critical patent/WO2006132818A2/en
Publication of WO2006132818A3 publication Critical patent/WO2006132818A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Abstract

A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting programming voltage as the memory is cycled. For example, the system programs a set of non-volatile storage elements during a first period using an increasing program signal with a first initial value and subsequently programs the set of non-volatile storage elements during a second period using an increasing program signal with a second initial value, where the second period is subsequent to the first period and the second initial value is different than the first initial value.
PCT/US2006/020375 2005-06-03 2006-05-26 Starting program voltage shift with cycling of non-volatile memory WO2006132818A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06771257.0A EP1886319B1 (en) 2005-06-03 2006-05-26 Starting program voltage shift with cycling of non-volatile memory
JP2008514710A JP4931915B2 (en) 2005-06-03 2006-05-26 Method for initiating program voltage shift as non-volatile memory is repeated
CN2006800197390A CN101213613B (en) 2005-06-03 2006-05-26 Starting program voltage shift with cycling of non-volatile memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/144,264 US7339834B2 (en) 2005-06-03 2005-06-03 Starting program voltage shift with cycling of non-volatile memory
US11/144,264 2005-06-03

Publications (2)

Publication Number Publication Date
WO2006132818A2 WO2006132818A2 (en) 2006-12-14
WO2006132818A3 true WO2006132818A3 (en) 2007-07-12

Family

ID=37493940

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/020375 WO2006132818A2 (en) 2005-06-03 2006-05-26 Starting program voltage shift with cycling of non-volatile memory

Country Status (7)

Country Link
US (4) US7339834B2 (en)
EP (1) EP1886319B1 (en)
JP (1) JP4931915B2 (en)
KR (1) KR100945057B1 (en)
CN (2) CN102385924B (en)
TW (1) TWI313868B (en)
WO (1) WO2006132818A2 (en)

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Also Published As

Publication number Publication date
US20080130368A1 (en) 2008-06-05
WO2006132818A2 (en) 2006-12-14
US20100020613A1 (en) 2010-01-28
US7633812B2 (en) 2009-12-15
EP1886319B1 (en) 2015-07-15
US7339834B2 (en) 2008-03-04
CN102385924A (en) 2012-03-21
JP2008542968A (en) 2008-11-27
CN101213613B (en) 2011-10-19
JP4931915B2 (en) 2012-05-16
TWI313868B (en) 2009-08-21
CN102385924B (en) 2015-01-14
TW200707440A (en) 2007-02-16
US20080137431A1 (en) 2008-06-12
EP1886319A2 (en) 2008-02-13
US20060274583A1 (en) 2006-12-07
KR20080016598A (en) 2008-02-21
CN101213613A (en) 2008-07-02
US8111554B2 (en) 2012-02-07
US7630254B2 (en) 2009-12-08
KR100945057B1 (en) 2010-03-05

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