WO2006138489A3 - Chip-based thermo-stack - Google Patents
Chip-based thermo-stack Download PDFInfo
- Publication number
- WO2006138489A3 WO2006138489A3 PCT/US2006/023361 US2006023361W WO2006138489A3 WO 2006138489 A3 WO2006138489 A3 WO 2006138489A3 US 2006023361 W US2006023361 W US 2006023361W WO 2006138489 A3 WO2006138489 A3 WO 2006138489A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stack
- chips
- working fluid
- chip
- tube
- Prior art date
Links
- 239000012530 fluid Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
- H01L2224/05027—Disposition the internal layer being disposed in a recess of the surface the internal layer extending out of an opening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05664—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05666—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/1146—Plating
- H01L2224/11462—Electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/1146—Plating
- H01L2224/11464—Electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
- H01L2224/11901—Methods of manufacturing bump connectors involving a specific sequence of method steps with repetition of the same manufacturing step
- H01L2224/11902—Multiple masking steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13083—Three-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13084—Four-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/13166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/13184—Tungsten [W] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13609—Indium [In] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/1605—Shape
- H01L2224/16057—Shape in side view
- H01L2224/16058—Shape in side view being non uniform along the bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81208—Compression bonding applying unidirectional static pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
A chip unit has a stack of at least two electronic chips stacked one on top of the other, a through-chip connection within the stack, the through chip connection including a bounding material having an inner and outer perimeter, the inner perimeter defining an interior volume longitudinally extending through at least one of the at least two chips and at least partially into another of the at least two chips so as to form a tube extending between the one and the other of the chips, and an amount of working fluid hermetically sealed within the tube, the working fluid having a volume and being at a pressure such that the working fluid and tube will operate as a heat pipe and transfer heat from the stack of chips to the working fluid.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69075905P | 2005-06-14 | 2005-06-14 | |
US60/690,759 | 2005-06-14 | ||
US11/329,558 | 2006-01-10 | ||
US11/329,558 US7560813B2 (en) | 2005-06-14 | 2006-01-10 | Chip-based thermo-stack |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006138489A2 WO2006138489A2 (en) | 2006-12-28 |
WO2006138489A3 true WO2006138489A3 (en) | 2007-11-15 |
Family
ID=37524566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/023361 WO2006138489A2 (en) | 2005-06-14 | 2006-06-14 | Chip-based thermo-stack |
Country Status (2)
Country | Link |
---|---|
US (2) | US7560813B2 (en) |
WO (1) | WO2006138489A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8048761B2 (en) * | 2009-02-17 | 2011-11-01 | Globalfoundries Singapore Pte. Ltd. | Fabricating method for crack stop structure enhancement of integrated circuit seal ring |
EP2273545B1 (en) * | 2009-07-08 | 2016-08-31 | Imec | Method for insertion bonding and kit of parts for use in said method |
US8609466B2 (en) * | 2009-07-15 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cap and substrate electrical connection at wafer level |
US9082762B2 (en) * | 2009-12-28 | 2015-07-14 | International Business Machines Corporation | Electromigration-resistant under-bump metallization of nickel-iron alloys for Sn-rich solder bumps in Pb-free flip-clip |
US7990711B1 (en) * | 2010-02-24 | 2011-08-02 | International Business Machines Corporation | Double-face heat removal of vertically integrated chip-stacks utilizing combined symmetric silicon carrier fluid cavity and micro-channel cold plate |
US9484123B2 (en) | 2011-09-16 | 2016-11-01 | Prc-Desoto International, Inc. | Conductive sealant compositions |
KR102190382B1 (en) | 2012-12-20 | 2020-12-11 | 삼성전자주식회사 | Semiconductor package |
US9159652B2 (en) | 2013-02-25 | 2015-10-13 | Stmicroelectronics S.R.L. | Electronic device comprising at least a chip enclosed in a package and a corresponding assembly process |
FR3036226A1 (en) * | 2015-05-13 | 2016-11-18 | Commissariat Energie Atomique | CONNECTION BY CONTAINMENT OF A MATERIAL BETWEEN TWO CONTACT ELEMENTS |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010001292A1 (en) * | 1998-04-07 | 2001-05-17 | Bertin Claude Louis | Through-chip conductors for low inductance chip-to-chip integration and off-chip connections |
US20020053726A1 (en) * | 2000-11-09 | 2002-05-09 | Kazuyuki Mikubo | Semiconductor device attaining both high speed processing and sufficient cooling capacity |
US20040207061A1 (en) * | 2001-08-30 | 2004-10-21 | Farrar Paul A. | Multi-chip electronic package and cooling system |
US20050104027A1 (en) * | 2003-10-17 | 2005-05-19 | Lazarev Pavel I. | Three-dimensional integrated circuit with integrated heat sinks |
Family Cites Families (261)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312878A (en) | 1965-06-01 | 1967-04-04 | Ibm | High speed packaging of miniaturized circuit modules |
US3591839A (en) | 1969-08-27 | 1971-07-06 | Siliconix Inc | Micro-electronic circuit with novel hermetic sealing structure and method of manufacture |
US3720309A (en) | 1971-12-07 | 1973-03-13 | Teledyne Inc | Method and apparatus for sorting semiconductor dice |
US4200272A (en) | 1978-06-12 | 1980-04-29 | Bcira | Holder for irregularly shaped articles |
NL8006194A (en) | 1980-11-13 | 1982-06-01 | Philips Nv | DEVICE FOR SIMULTANEOUS PLACEMENT OF MULTIPLE ELECTRICAL AND / OR ELECTRONIC COMPONENTS ON A PRINTED WIRING PANEL. |
US4893174A (en) | 1985-07-08 | 1990-01-09 | Hitachi, Ltd. | High density integration of semiconductor circuit |
US4878611A (en) | 1986-05-30 | 1989-11-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Process for controlling solder joint geometry when surface mounting a leadless integrated circuit package on a substrate |
US5134460A (en) | 1986-08-11 | 1992-07-28 | International Business Machines Corporation | Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding |
JPH07112041B2 (en) | 1986-12-03 | 1995-11-29 | シャープ株式会社 | Method for manufacturing semiconductor device |
JPS63258060A (en) | 1987-04-15 | 1988-10-25 | Nec Corp | Semiconductor memory divice |
US5014111A (en) | 1987-12-08 | 1991-05-07 | Matsushita Electric Industrial Co., Ltd. | Electrical contact bump and a package provided with the same |
US4873205A (en) | 1987-12-21 | 1989-10-10 | International Business Machines Corporation | Method for providing silicide bridge contact between silicon regions separated by a thin dielectric |
US4915494A (en) | 1988-07-06 | 1990-04-10 | Harris Corporation | Carbon-carbon mirror for space applications |
US5089880A (en) | 1989-06-07 | 1992-02-18 | Amdahl Corporation | Pressurized interconnection system for semiconductor chips |
US5179043A (en) * | 1989-07-14 | 1993-01-12 | The Texas A&M University System | Vapor deposited micro heat pipes |
US5399898A (en) | 1992-07-17 | 1995-03-21 | Lsi Logic Corporation | Multi-chip semiconductor arrangements using flip chip dies |
US4999077A (en) | 1989-08-31 | 1991-03-12 | Xerox Corporation | Method of fabricating full width scanning or imaging arrays from subunits |
US5236854A (en) | 1989-12-11 | 1993-08-17 | Yukio Higaki | Compound semiconductor device and method for fabrication thereof |
US5089055A (en) | 1989-12-12 | 1992-02-18 | Takashi Nakamura | Survivable solar power-generating systems for use with spacecraft |
JPH0831617B2 (en) | 1990-04-18 | 1996-03-27 | 三菱電機株式会社 | Solar cell and manufacturing method thereof |
JP2918307B2 (en) | 1990-08-07 | 1999-07-12 | 沖電気工業株式会社 | Semiconductor storage element |
US5166097A (en) * | 1990-11-26 | 1992-11-24 | The Boeing Company | Silicon wafers containing conductive feedthroughs |
JPH0817880B2 (en) | 1990-11-28 | 1996-02-28 | 帝人株式会社 | Press cushion material |
KR940006696B1 (en) | 1991-01-16 | 1994-07-25 | 금성일렉트론 주식회사 | Manufacturing method of isolation layer of semiconductor device |
EP0516866A1 (en) | 1991-05-03 | 1992-12-09 | International Business Machines Corporation | Modular multilayer interwiring structure |
US5308784A (en) | 1991-10-02 | 1994-05-03 | Samsung Electronics Co., Ltd. | Semiconductor device and method for making the same |
US5427834A (en) | 1991-10-31 | 1995-06-27 | Idm Enterprises | Waterproof textile |
US5266912A (en) | 1992-08-19 | 1993-11-30 | Micron Technology, Inc. | Inherently impedance matched multiple integrated circuit module |
US5234149A (en) | 1992-08-28 | 1993-08-10 | At&T Bell Laboratories | Debondable metallic bonding method |
US5603847A (en) | 1993-04-07 | 1997-02-18 | Zycon Corporation | Annular circuit components coupled with printed circuit board through-hole |
US5600103A (en) | 1993-04-16 | 1997-02-04 | Kabushiki Kaisha Toshiba | Circuit devices and fabrication method of the same |
GB9400384D0 (en) | 1994-01-11 | 1994-03-09 | Inmos Ltd | Circuit connection in an electrical assembly |
US5470787A (en) | 1994-05-02 | 1995-11-28 | Motorola, Inc. | Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same |
JPH0837395A (en) | 1994-07-21 | 1996-02-06 | Matsushita Electric Ind Co Ltd | Device and method for supplying semiconductor chip |
US5523628A (en) | 1994-08-05 | 1996-06-04 | Hughes Aircraft Company | Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips |
US6093615A (en) | 1994-08-15 | 2000-07-25 | Micron Technology, Inc. | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug |
US5587119A (en) | 1994-09-14 | 1996-12-24 | E-Systems, Inc. | Method for manufacturing a coaxial interconnect |
DE4433845A1 (en) | 1994-09-22 | 1996-03-28 | Fraunhofer Ges Forschung | Method of manufacturing a three-dimensional integrated circuit |
US5468655A (en) | 1994-10-31 | 1995-11-21 | Motorola, Inc. | Method for forming a temporary attachment between a semiconductor die and a substrate using a metal paste comprising spherical modules |
US5598965A (en) | 1994-11-03 | 1997-02-04 | Scheu; William E. | Integrated circuit, electronic component chip removal and replacement system |
US5707902A (en) | 1995-02-13 | 1998-01-13 | Industrial Technology Research Institute | Composite bump structure and methods of fabrication |
DE19514545A1 (en) * | 1995-04-20 | 1996-10-24 | Daimler Benz Ag | Micro-cooling device for multiple microelectronic components |
US5814889A (en) | 1995-06-05 | 1998-09-29 | Harris Corporation | Intergrated circuit with coaxial isolation and method |
US5608264A (en) | 1995-06-05 | 1997-03-04 | Harris Corporation | Surface mountable integrated circuit with conductive vias |
US5796591A (en) | 1995-06-07 | 1998-08-18 | International Business Machines Corporation | Direct chip attach circuit card |
US5635014A (en) | 1995-06-19 | 1997-06-03 | Gr Systems | Press apparatus and methods for fusing overlapped thermoplastic sheet materials |
US5872051A (en) | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
JP3498877B2 (en) | 1995-12-05 | 2004-02-23 | 株式会社東芝 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
JP2739855B2 (en) | 1995-12-14 | 1998-04-15 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
US5973396A (en) | 1996-02-16 | 1999-10-26 | Micron Technology, Inc. | Surface mount IC using silicon vias in an area array format or same size as die array |
US6310484B1 (en) * | 1996-04-01 | 2001-10-30 | Micron Technology, Inc. | Semiconductor test interconnect with variable flexure contacts |
US5872338A (en) | 1996-04-10 | 1999-02-16 | Prolinx Labs Corporation | Multilayer board having insulating isolation rings |
US5793116A (en) | 1996-05-29 | 1998-08-11 | Mcnc | Microelectronic packaging using arched solder columns |
JP2790122B2 (en) | 1996-05-31 | 1998-08-27 | 日本電気株式会社 | Laminated circuit board |
JP3610999B2 (en) | 1996-06-07 | 2005-01-19 | 松下電器産業株式会社 | Mounting method of semiconductor element |
GB2316225A (en) | 1996-08-06 | 1998-02-18 | Northern Telecom Ltd | Semiconductor photodetector packaging |
US5916453A (en) | 1996-09-20 | 1999-06-29 | Fujitsu Limited | Methods of planarizing structures on wafers and substrates by polishing |
US7052941B2 (en) | 2003-06-24 | 2006-05-30 | Sang-Yun Lee | Method for making a three-dimensional integrated circuit structure |
JP2877108B2 (en) | 1996-12-04 | 1999-03-31 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
US6333522B1 (en) | 1997-01-31 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
JP3176307B2 (en) | 1997-03-03 | 2001-06-18 | 日本電気株式会社 | Mounting structure of integrated circuit device and method of manufacturing the same |
US5846464A (en) | 1997-03-28 | 1998-12-08 | Mcdonnell Douglas Corporation | Method for forming composite parts using reconfigurable modular tooling |
JP3920399B2 (en) | 1997-04-25 | 2007-05-30 | 株式会社東芝 | Multi-chip semiconductor device chip alignment method, and multi-chip semiconductor device manufacturing method and manufacturing apparatus |
JPH10303252A (en) | 1997-04-28 | 1998-11-13 | Nec Kansai Ltd | Semiconductor device |
JPH10335383A (en) | 1997-05-28 | 1998-12-18 | Matsushita Electric Ind Co Ltd | Producing method for semiconductor device |
US6133631A (en) * | 1997-05-30 | 2000-10-17 | Hewlett-Packard Company | Semiconductor package lid with internal heat pipe |
US6335571B1 (en) | 1997-07-21 | 2002-01-01 | Miguel Albert Capote | Semiconductor flip-chip package and method for the fabrication thereof |
US6135054A (en) | 1997-09-10 | 2000-10-24 | Nippon Pillar Packing Co. Ltd. | Semiconductor wafer holder with CVD silicon carbide film coating |
JPH11166935A (en) | 1997-09-25 | 1999-06-22 | Canon Inc | Light probe for light detection or irradiation, near-field optical microscope provided with the probe, manufacture of the light probe and substrate used for its manufacture |
CN100510975C (en) | 1997-10-31 | 2009-07-08 | 三洋化成工业株式会社 | Toner and toner binder |
US6620731B1 (en) | 1997-12-18 | 2003-09-16 | Micron Technology, Inc. | Method for fabricating semiconductor components and interconnects with contacts on opposing sides |
US6075710A (en) | 1998-02-11 | 2000-06-13 | Express Packaging Systems, Inc. | Low-cost surface-mount compatible land-grid array (LGA) chip scale package (CSP) for packaging solder-bumped flip chips |
US6110760A (en) | 1998-02-12 | 2000-08-29 | Micron Technology, Inc. | Methods of forming electrically conductive interconnections and electrically interconnected substrates |
JP3102405B2 (en) | 1998-02-13 | 2000-10-23 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US5962922A (en) | 1998-03-18 | 1999-10-05 | Wang; Bily | Cavity grid array integrated circuit package |
EP0951068A1 (en) | 1998-04-17 | 1999-10-20 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of fabrication of a microstructure having an inside cavity |
SG75958A1 (en) | 1998-06-01 | 2000-10-24 | Hitachi Ulsi Sys Co Ltd | Semiconductor device and a method of producing semiconductor device |
US6399426B1 (en) | 1998-07-21 | 2002-06-04 | Miguel Albert Capote | Semiconductor flip-chip package and method for the fabrication thereof |
US7107666B2 (en) | 1998-07-23 | 2006-09-19 | Bh Electronics | Method of manufacturing an ultra-miniature magnetic device |
US6118181A (en) | 1998-07-29 | 2000-09-12 | Agilent Technologies, Inc. | System and method for bonding wafers |
US6316786B1 (en) | 1998-08-29 | 2001-11-13 | International Business Machines Corporation | Organic opto-electronic devices |
US6380023B2 (en) * | 1998-09-02 | 2002-04-30 | Micron Technology, Inc. | Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits |
US6121576A (en) | 1998-09-02 | 2000-09-19 | Micron Technology, Inc. | Method and process of contact to a heat softened solder ball array |
US6122187A (en) | 1998-11-23 | 2000-09-19 | Micron Technology, Inc. | Stacked integrated circuits |
JP4590052B2 (en) | 1998-12-04 | 2010-12-01 | キヤノン株式会社 | Solar cell roof structure, solar power generation device and building |
JP3847494B2 (en) | 1998-12-14 | 2006-11-22 | シャープ株式会社 | Manufacturing method of two-dimensional image detector |
JP2000223653A (en) | 1999-02-02 | 2000-08-11 | Rohm Co Ltd | Semiconductor device having chip-on-chip structure and semiconductor chip using the same |
US6410415B1 (en) | 1999-03-23 | 2002-06-25 | Polymer Flip Chip Corporation | Flip chip mounting technique |
US6207475B1 (en) | 1999-03-30 | 2001-03-27 | Industrial Technology Research Institute | Method for dispensing underfill and devices formed |
US6393638B1 (en) | 1999-04-20 | 2002-05-28 | Maccoll Ian Coats | Waterproof blanket with integrated storage bag |
US6225206B1 (en) | 1999-05-10 | 2001-05-01 | International Business Machines Corporation | Flip chip C4 extension structure and process |
JP2000349101A (en) | 1999-06-07 | 2000-12-15 | Lintec Corp | Transfer tape and use method thereof |
JP3518434B2 (en) * | 1999-08-11 | 2004-04-12 | 株式会社日立製作所 | Multi-chip module cooling system |
US6316737B1 (en) | 1999-09-09 | 2001-11-13 | Vlt Corporation | Making a connection between a component and a circuit board |
US6135635A (en) | 1999-10-07 | 2000-10-24 | Miller; Jeffrey | Convertible bag and barrier device |
US6283693B1 (en) | 1999-11-12 | 2001-09-04 | General Semiconductor, Inc. | Method and apparatus for semiconductor chip handling |
US6756594B2 (en) | 2000-01-28 | 2004-06-29 | California Institute Of Technology | Micromachined tuned-band hot bolometer emitter |
JP3386029B2 (en) | 2000-02-09 | 2003-03-10 | 日本電気株式会社 | Flip chip type semiconductor device and manufacturing method thereof |
US6513236B2 (en) | 2000-02-18 | 2003-02-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing bump-component mounted body and device for manufacturing the same |
JP3394947B2 (en) | 2000-02-24 | 2003-04-07 | 日東電工株式会社 | Adhesive tape and adhesive tape substrate |
JP3979791B2 (en) | 2000-03-08 | 2007-09-19 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
EP1278612B1 (en) | 2000-03-10 | 2010-02-24 | Chippac, Inc. | Flip chip Interconnection structure and method of obtaining the same |
US6446317B1 (en) | 2000-03-31 | 2002-09-10 | Intel Corporation | Hybrid capacitor and method of fabrication therefor |
US6484776B1 (en) | 2000-04-07 | 2002-11-26 | Northrop Grumman Corporation | System for constructing a laminate |
JP3968554B2 (en) | 2000-05-01 | 2007-08-29 | セイコーエプソン株式会社 | Bump forming method and semiconductor device manufacturing method |
US6909180B2 (en) | 2000-05-12 | 2005-06-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device, mounting circuit board, method of producing the same, and method of producing mounting structure using the same |
JP2001338947A (en) | 2000-05-26 | 2001-12-07 | Nec Corp | Flip chip type semiconductor device and its manufacturing method |
KR100398716B1 (en) | 2000-06-12 | 2003-09-19 | 가부시키가이샤 히타치세이사쿠쇼 | Semiconductor module and circuit substrate |
JP2002289768A (en) | 2000-07-17 | 2002-10-04 | Rohm Co Ltd | Semiconductor device and its manufacturing method |
US6938783B2 (en) | 2000-07-26 | 2005-09-06 | Amerasia International Technology, Inc. | Carrier tape |
TW525417B (en) * | 2000-08-11 | 2003-03-21 | Ind Tech Res Inst | Composite through hole structure |
US7271491B1 (en) | 2000-08-31 | 2007-09-18 | Micron Technology, Inc. | Carrier for wafer-scale package and wafer-scale package including the carrier |
US6577013B1 (en) | 2000-09-05 | 2003-06-10 | Amkor Technology, Inc. | Chip size semiconductor packages with stacked dies |
US6627477B1 (en) | 2000-09-07 | 2003-09-30 | International Business Machines Corporation | Method of assembling a plurality of semiconductor devices having different thickness |
US6720245B2 (en) | 2000-09-07 | 2004-04-13 | Interuniversitair Microelektronica Centrum (Imec) | Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme |
US7262082B1 (en) | 2000-10-13 | 2007-08-28 | Bridge Semiconductor Corporation | Method of making a three-dimensional stacked semiconductor package with a metal pillar and a conductive interconnect in an encapsulant aperture |
US6740576B1 (en) | 2000-10-13 | 2004-05-25 | Bridge Semiconductor Corporation | Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly |
JP2002134545A (en) | 2000-10-26 | 2002-05-10 | Oki Electric Ind Co Ltd | Semiconductor integrated circuit chip, board and their manufacturing method |
EP1217656A1 (en) | 2000-12-20 | 2002-06-26 | STMicroelectronics S.r.l. | Process for manufacturing components in a semiconductor material with reduction in the starting wafer thickness |
US6557192B2 (en) | 2001-01-02 | 2003-05-06 | Patent Category Corp. | Sleeping bag with enhancements |
US6277711B1 (en) | 2001-01-08 | 2001-08-21 | Jiahn-Chang Wu | Semiconductor matrix formation |
US6512300B2 (en) * | 2001-01-10 | 2003-01-28 | Raytheon Company | Water level interconnection |
US6543674B2 (en) | 2001-02-06 | 2003-04-08 | Fujitsu Limited | Multilayer interconnection and method |
US6429045B1 (en) | 2001-02-07 | 2002-08-06 | International Business Machines Corporation | Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage |
KR100364635B1 (en) | 2001-02-09 | 2002-12-16 | 삼성전자 주식회사 | Chip-Level Three-Dimensional Multi-Chip Package Having Chip Selection Pad Formed On Chip-Level And Making Method Therefor |
US7233028B2 (en) * | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
US7242099B2 (en) | 2001-03-05 | 2007-07-10 | Megica Corporation | Chip package with multiple chips connected by bumps |
JP4118029B2 (en) | 2001-03-09 | 2008-07-16 | 富士通株式会社 | Semiconductor integrated circuit device and manufacturing method thereof |
JP2002289900A (en) | 2001-03-23 | 2002-10-04 | Canon Inc | Concentrating solar cell module and concentrating photovoltaic power generation system |
JP2002289770A (en) | 2001-03-27 | 2002-10-04 | Nec Kansai Ltd | Semiconductor device |
US6872635B2 (en) | 2001-04-11 | 2005-03-29 | Sony Corporation | Device transferring method, and device arraying method and image display unit fabricating method using the same |
TW561805B (en) | 2001-05-16 | 2003-11-11 | Unimicron Technology Corp | Fabrication method of micro-via |
JP2002359386A (en) | 2001-05-31 | 2002-12-13 | Canon Inc | Solar battery string, solar battery array, and solar power generation system |
US6413851B1 (en) | 2001-06-12 | 2002-07-02 | Advanced Interconnect Technology, Ltd. | Method of fabrication of barrier cap for under bump metal |
FR2826153B1 (en) | 2001-06-14 | 2004-05-28 | A S K | METHOD FOR CONNECTING A CHIP TO AN ANTENNA OF A RADIO FREQUENCY IDENTIFICATION DEVICE OF THE CONTACTLESS CHIP CARD TYPE |
US6451626B1 (en) | 2001-07-27 | 2002-09-17 | Charles W.C. Lin | Three-dimensional stacked semiconductor package |
US6765287B1 (en) | 2001-07-27 | 2004-07-20 | Charles W. C. Lin | Three-dimensional stacked semiconductor package |
US7218349B2 (en) * | 2001-08-09 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6635960B2 (en) | 2001-08-30 | 2003-10-21 | Micron Technology, Inc. | Angled edge connections for multichip structures |
US6686654B2 (en) | 2001-08-31 | 2004-02-03 | Micron Technology, Inc. | Multiple chip stack structure and cooling system |
US6881609B2 (en) * | 2001-09-07 | 2005-04-19 | Peter C. Salmon | Component connections using bumps and wells |
EP1434261B1 (en) | 2001-09-12 | 2010-03-31 | Nikkiso Co., Ltd. | Circuit device mounting method and press |
DE20115945U1 (en) | 2001-09-27 | 2001-12-13 | Heimbach Gmbh Thomas Josef | Press pad |
JP4917225B2 (en) | 2001-09-28 | 2012-04-18 | ローム株式会社 | Semiconductor device |
US6750516B2 (en) | 2001-10-18 | 2004-06-15 | Hewlett-Packard Development Company, L.P. | Systems and methods for electrically isolating portions of wafers |
JP3976541B2 (en) | 2001-10-23 | 2007-09-19 | 富士通株式会社 | Semiconductor chip peeling method and apparatus |
US6717045B2 (en) | 2001-10-23 | 2004-04-06 | Leon L. C. Chen | Photovoltaic array module design for solar electric power generation systems |
ITTO20011038A1 (en) | 2001-10-30 | 2003-04-30 | St Microelectronics Srl | PROCEDURE FOR THE MANUFACTURE OF AN INTEGRATED SEMICONDUCTIVE SLICE FOR ELECTRONIC DEVICES AND A STRUCTURE FOR THE DECOUPLING AND |
US6768210B2 (en) | 2001-11-01 | 2004-07-27 | Texas Instruments Incorporated | Bumpless wafer scale device and board assembly |
JP3495727B2 (en) * | 2001-11-07 | 2004-02-09 | 新光電気工業株式会社 | Semiconductor package and manufacturing method thereof |
US6617507B2 (en) | 2001-11-16 | 2003-09-09 | First Solar, Llc | Photovoltaic array |
US6599778B2 (en) | 2001-12-19 | 2003-07-29 | International Business Machines Corporation | Chip and wafer integration process using vertical connections |
US6674647B2 (en) | 2002-01-07 | 2004-01-06 | International Business Machines Corporation | Low or no-force bump flattening structure and method |
US6590278B1 (en) | 2002-01-08 | 2003-07-08 | International Business Machines Corporation | Electronic package |
US6635970B2 (en) | 2002-02-06 | 2003-10-21 | International Business Machines Corporation | Power distribution design method for stacked flip-chip packages |
KR100415282B1 (en) | 2002-02-06 | 2004-01-16 | 삼성전자주식회사 | Dual die bonder for semiconductor devices |
US6606251B1 (en) * | 2002-02-07 | 2003-08-12 | Cooligy Inc. | Power conditioning module |
US6889427B2 (en) | 2002-02-15 | 2005-05-10 | Freescale Semiconductor, Inc. | Process for disengaging semiconductor die from an adhesive film |
US6770822B2 (en) | 2002-02-22 | 2004-08-03 | Bridgewave Communications, Inc. | High frequency device packages and methods |
US7098072B2 (en) | 2002-03-01 | 2006-08-29 | Agng, Llc | Fluxless assembly of chip size semiconductor packages |
AU2003218085A1 (en) | 2002-03-12 | 2003-09-29 | Fairchild Semiconductor Corporation | Wafer-level coated copper stud bumps |
US6660548B2 (en) * | 2002-03-27 | 2003-12-09 | Intel Corporation | Packaging of multiple active optical devices |
KR100446316B1 (en) | 2002-03-30 | 2004-09-01 | 주식회사 하이닉스반도체 | Method for forming a contact plug in semiconductor device |
JP3717899B2 (en) | 2002-04-01 | 2005-11-16 | Necエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
EP2560199B1 (en) | 2002-04-05 | 2016-08-03 | STMicroelectronics S.r.l. | Process for manufacturing a through insulated interconnection in a body of semiconductor material |
US6583517B1 (en) | 2002-04-09 | 2003-06-24 | International Business Machines Corporation | Method and structure for joining two substrates with a low melt solder joint |
US6642081B1 (en) | 2002-04-11 | 2003-11-04 | Robert Patti | Interlocking conductor method for bonding wafers to produce stacked integrated circuits |
US7135777B2 (en) | 2002-05-03 | 2006-11-14 | Georgia Tech Research Corporation | Devices having compliant wafer-level input/output interconnections and packages using pillars and methods of fabrication thereof |
US6939789B2 (en) | 2002-05-13 | 2005-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of wafer level chip scale packaging |
US6930032B2 (en) | 2002-05-14 | 2005-08-16 | Freescale Semiconductor, Inc. | Under bump metallurgy structural design for high reliability bumped packages |
US6689949B2 (en) | 2002-05-17 | 2004-02-10 | United Innovations, Inc. | Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies |
KR100449948B1 (en) | 2002-05-18 | 2004-09-30 | 주식회사 하이닉스반도체 | Method for fabricating contact plug with low contact resistance |
JP3527229B2 (en) | 2002-05-20 | 2004-05-17 | 沖電気工業株式会社 | Semiconductor device, method of mounting semiconductor device, and method of repairing semiconductor device |
EP1369929B1 (en) | 2002-05-27 | 2016-08-03 | STMicroelectronics Srl | A process for manufacturing encapsulated optical sensors, and an encapsulated optical sensor manufactured using this process |
US6704953B2 (en) | 2002-06-05 | 2004-03-16 | Zelma Lee Fishman | Combination sleeping bag and mat for infants and children |
SG111069A1 (en) | 2002-06-18 | 2005-05-30 | Micron Technology Inc | Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods |
US6596640B1 (en) | 2002-06-21 | 2003-07-22 | Intel Corporation | Method of forming a raised contact for a substrate |
JP3679786B2 (en) | 2002-06-25 | 2005-08-03 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
US6919642B2 (en) | 2002-07-05 | 2005-07-19 | Industrial Technology Research Institute | Method for bonding IC chips to substrates incorporating dummy bumps and non-conductive adhesive and structures formed |
US7023347B2 (en) | 2002-08-02 | 2006-04-04 | Symbol Technologies, Inc. | Method and system for forming a die frame and for transferring dies therewith |
JP2004080221A (en) | 2002-08-13 | 2004-03-11 | Fujitsu Media Device Kk | Elastic wave device and its manufacturing method |
US6818818B2 (en) | 2002-08-13 | 2004-11-16 | Esmond T. Goei | Concentrating solar energy receiver |
US6903442B2 (en) | 2002-08-29 | 2005-06-07 | Micron Technology, Inc. | Semiconductor component having backside pin contacts |
US6986377B2 (en) | 2002-09-30 | 2006-01-17 | Illinois Tool Works Inc. | Method and apparatus for guiding and sealing split-flange zipper tape to bag making film |
SG111972A1 (en) | 2002-10-17 | 2005-06-29 | Agency Science Tech & Res | Wafer-level package for micro-electro-mechanical systems |
US6929974B2 (en) | 2002-10-18 | 2005-08-16 | Motorola, Inc. | Feedthrough design and method for a hermetically sealed microdevice |
GB0227009D0 (en) | 2002-11-19 | 2002-12-24 | Worlds Apart Ltd | Convertible blanket |
JP4342174B2 (en) | 2002-12-27 | 2009-10-14 | 新光電気工業株式会社 | Electronic device and manufacturing method thereof |
US7015590B2 (en) | 2003-01-10 | 2006-03-21 | Samsung Electronics Co., Ltd. | Reinforced solder bump structure and method for forming a reinforced solder bump |
US6821878B2 (en) | 2003-02-27 | 2004-11-23 | Freescale Semiconductor, Inc. | Area-array device assembly with pre-applied underfill layers on printed wiring board |
JP4082242B2 (en) | 2003-03-06 | 2008-04-30 | ソニー株式会社 | Element transfer method |
JP4139713B2 (en) | 2003-03-12 | 2008-08-27 | シャープ株式会社 | Reinforcing plate pasting device and pasting method |
SE526366C3 (en) | 2003-03-21 | 2005-10-26 | Silex Microsystems Ab | Electrical connections in substrate |
US7013509B2 (en) | 2003-03-28 | 2006-03-21 | Hickman Robert J | Easy on/easy off pillow and blanket cover |
US6841883B1 (en) | 2003-03-31 | 2005-01-11 | Micron Technology, Inc. | Multi-dice chip scale semiconductor components and wafer level methods of fabrication |
ITTO20030269A1 (en) | 2003-04-08 | 2004-10-09 | St Microelectronics Srl | PROCEDURE FOR THE MANUFACTURE OF A DEVICE |
JP4419049B2 (en) * | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | Memory module and memory system |
US7115528B2 (en) | 2003-04-29 | 2006-10-03 | Micron Technology, Inc. | Systems and method for forming silicon oxide layers |
JP4104490B2 (en) | 2003-05-21 | 2008-06-18 | オリンパス株式会社 | Manufacturing method of semiconductor device |
TWI229930B (en) | 2003-06-09 | 2005-03-21 | Advanced Semiconductor Eng | Chip structure |
US20050048766A1 (en) | 2003-08-31 | 2005-03-03 | Wen-Chieh Wu | Method for fabricating a conductive plug in integrated circuit |
US20050046034A1 (en) * | 2003-09-03 | 2005-03-03 | Micron Technology, Inc. | Apparatus and method for high density multi-chip structures |
US6897125B2 (en) | 2003-09-17 | 2005-05-24 | Intel Corporation | Methods of forming backside connections on a wafer stack |
TWI251313B (en) * | 2003-09-26 | 2006-03-11 | Seiko Epson Corp | Intermediate chip module, semiconductor device, circuit board, and electronic device |
US7084014B2 (en) * | 2003-10-07 | 2006-08-01 | Endicott Interconnect Technologies, Inc. | Method of making circuitized substrate |
TWI478254B (en) | 2003-11-10 | 2015-03-21 | Chippac Inc | Bump-on-lead flip chip interconnection |
US6861336B1 (en) | 2003-11-30 | 2005-03-01 | Union Semiconductor Technology Corporation | Die thinning methods |
US7276787B2 (en) * | 2003-12-05 | 2007-10-02 | International Business Machines Corporation | Silicon chip carrier with conductive through-vias and method for fabricating same |
US7230318B2 (en) | 2003-12-24 | 2007-06-12 | Agency For Science, Technology And Research | RF and MMIC stackable micro-modules |
US6992824B1 (en) | 2003-12-27 | 2006-01-31 | Motamedi Manouchehr E | Efficient wave propagation for terahertz imaging and sensing |
KR100538158B1 (en) | 2004-01-09 | 2005-12-22 | 삼성전자주식회사 | Method for attaching stack chip of wafer level |
JP4204989B2 (en) | 2004-01-30 | 2009-01-07 | 新光電気工業株式会社 | Semiconductor device and manufacturing method thereof |
TWI254995B (en) | 2004-01-30 | 2006-05-11 | Phoenix Prec Technology Corp | Presolder structure formed on semiconductor package substrate and method for fabricating the same |
FR2867308B1 (en) | 2004-03-02 | 2006-05-19 | Atmel Grenoble Sa | INTEGRATED CIRCUIT WITH READING DIODE OF VERY SMALL DIMENSIONS |
JP4074862B2 (en) | 2004-03-24 | 2008-04-16 | ローム株式会社 | Semiconductor device manufacturing method, semiconductor device, and semiconductor chip |
JP3875240B2 (en) | 2004-03-31 | 2007-01-31 | 株式会社東芝 | Manufacturing method of electronic parts |
US7144759B1 (en) | 2004-04-02 | 2006-12-05 | Celerity Research Pte. Ltd. | Technology partitioning for advanced flip-chip packaging |
US20050245059A1 (en) | 2004-04-30 | 2005-11-03 | Yuan Yuan | Method for making an interconnect pad |
TWI230989B (en) | 2004-05-05 | 2005-04-11 | Megic Corp | Chip bonding method |
JP4119866B2 (en) | 2004-05-12 | 2008-07-16 | 富士通株式会社 | Semiconductor device |
JP4955935B2 (en) * | 2004-05-25 | 2012-06-20 | キヤノン株式会社 | Through-hole forming method and semiconductor device manufacturing method |
JP4441328B2 (en) | 2004-05-25 | 2010-03-31 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
US20050262634A1 (en) | 2004-05-28 | 2005-12-01 | Gottlieb Patricia R | Combination convertible blanket and pillow |
JP2006019455A (en) * | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | Semiconductor device and manufacturing method thereof |
US7249992B2 (en) | 2004-07-02 | 2007-07-31 | Strasbaugh | Method, apparatus and system for use in processing wafers |
US7109068B2 (en) | 2004-08-31 | 2006-09-19 | Micron Technology, Inc. | Through-substrate interconnect fabrication methods |
US7129567B2 (en) * | 2004-08-31 | 2006-10-31 | Micron Technology, Inc. | Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements |
US7157310B2 (en) * | 2004-09-01 | 2007-01-02 | Micron Technology, Inc. | Methods for packaging microfeature devices and microfeature devices formed by such methods |
US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US7326629B2 (en) * | 2004-09-10 | 2008-02-05 | Agency For Science, Technology And Research | Method of stacking thin substrates by transfer bonding |
JP4966487B2 (en) | 2004-09-29 | 2012-07-04 | オンセミコンダクター・トレーディング・リミテッド | Semiconductor device and manufacturing method thereof |
JP4813035B2 (en) * | 2004-10-01 | 2011-11-09 | 新光電気工業株式会社 | Manufacturing method of substrate with through electrode |
US9466595B2 (en) * | 2004-10-04 | 2016-10-11 | Intel Corporation | Fabrication of stacked die and structures formed thereby |
US20060070704A1 (en) * | 2004-10-06 | 2006-04-06 | Tropicana Products, Inc. | Vaccum support and transfer of flexible material |
KR100498708B1 (en) | 2004-11-08 | 2005-07-01 | 옵토팩 주식회사 | Electronic package for semiconductor device and packaging method thereof |
US20060125084A1 (en) | 2004-12-15 | 2006-06-15 | Fazzio Ronald S | Integration of micro-electro mechanical systems and active circuitry |
US7396732B2 (en) | 2004-12-17 | 2008-07-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Formation of deep trench airgaps and related applications |
US7264984B2 (en) | 2004-12-21 | 2007-09-04 | Touchdown Technologies, Inc. | Process for forming MEMS |
US7390735B2 (en) | 2005-01-07 | 2008-06-24 | Teledyne Licensing, Llc | High temperature, stable SiC device interconnects and packages having low thermal resistance |
JP4057017B2 (en) | 2005-01-31 | 2008-03-05 | 富士通株式会社 | Electronic device and manufacturing method thereof |
US7442570B2 (en) | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
US7371676B2 (en) | 2005-04-08 | 2008-05-13 | Micron Technology, Inc. | Method for fabricating semiconductor components with through wire interconnects |
US20060252262A1 (en) | 2005-05-03 | 2006-11-09 | Rockwell Scientific Licensing, Llc | Semiconductor structures having via structures between planar frontside and backside surfaces and methods of fabricating the same |
TW200644165A (en) | 2005-05-04 | 2006-12-16 | Icemos Technology Corp | Silicon wafer having through-wafer vias |
US7303976B2 (en) | 2005-05-10 | 2007-12-04 | Hewlett-Packard Development Company, L.P. | Wafer bonding method |
US7170183B1 (en) * | 2005-05-13 | 2007-01-30 | Amkor Technology, Inc. | Wafer level stacked package |
CN101589543B (en) | 2005-05-18 | 2012-10-31 | 科隆科技公司 | Micro-electro-mechanical transducers |
US20060264029A1 (en) | 2005-05-23 | 2006-11-23 | Intel Corporation | Low inductance via structures |
EP1732116B1 (en) | 2005-06-08 | 2017-02-01 | Imec | Methods for bonding and micro-electronic devices produced according to such methods |
US7767493B2 (en) | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
US7838997B2 (en) | 2005-06-14 | 2010-11-23 | John Trezza | Remote chip attachment |
US20060281303A1 (en) | 2005-06-14 | 2006-12-14 | John Trezza | Tack & fuse chip bonding |
US7534722B2 (en) | 2005-06-14 | 2009-05-19 | John Trezza | Back-to-front via process |
US7687400B2 (en) | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US7157372B1 (en) | 2005-06-14 | 2007-01-02 | Cubic Wafer Inc. | Coaxial through chip connection |
US7488680B2 (en) | 2005-08-30 | 2009-02-10 | International Business Machines Corporation | Conductive through via process for electronic device carriers |
US7528494B2 (en) * | 2005-11-03 | 2009-05-05 | International Business Machines Corporation | Accessible chip stack and process of manufacturing thereof |
TWI310366B (en) | 2005-11-25 | 2009-06-01 | Panasonic Elec Works Co Ltd | Wafer-level package structure, and sensor device obtained from the same |
US20080017407A1 (en) | 2006-07-24 | 2008-01-24 | Ibiden Co., Ltd. | Interposer and electronic device using the same |
US7982307B2 (en) * | 2006-11-22 | 2011-07-19 | Agere Systems Inc. | Integrated circuit chip assembly having array of thermally conductive features arranged in aperture of circuit substrate |
US20080284037A1 (en) | 2007-05-15 | 2008-11-20 | Andry Paul S | Apparatus and Methods for Constructing Semiconductor Chip Packages with Silicon Space Transformer Carriers |
-
2006
- 2006-01-10 US US11/329,558 patent/US7560813B2/en active Active
- 2006-06-14 WO PCT/US2006/023361 patent/WO2006138489A2/en active Application Filing
-
2009
- 2009-06-12 US US12/483,609 patent/US7785931B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010001292A1 (en) * | 1998-04-07 | 2001-05-17 | Bertin Claude Louis | Through-chip conductors for low inductance chip-to-chip integration and off-chip connections |
US20020053726A1 (en) * | 2000-11-09 | 2002-05-09 | Kazuyuki Mikubo | Semiconductor device attaining both high speed processing and sufficient cooling capacity |
US20040207061A1 (en) * | 2001-08-30 | 2004-10-21 | Farrar Paul A. | Multi-chip electronic package and cooling system |
US20050104027A1 (en) * | 2003-10-17 | 2005-05-19 | Lazarev Pavel I. | Three-dimensional integrated circuit with integrated heat sinks |
Also Published As
Publication number | Publication date |
---|---|
WO2006138489A2 (en) | 2006-12-28 |
US20090269888A1 (en) | 2009-10-29 |
US7560813B2 (en) | 2009-07-14 |
US7785931B2 (en) | 2010-08-31 |
US20060281219A1 (en) | 2006-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2006138489A3 (en) | Chip-based thermo-stack | |
EP2192052A3 (en) | Bag packaging as well as method and device for producing the package. | |
USD545676S1 (en) | Bottle stopper | |
CA2718748C (en) | Sensor | |
TW200626858A (en) | Sintered heat pipe and method for manufacturing the same | |
DOP2002000416A (en) | VACUUM DEMAND FLOW VALVE. | |
EP1785710A3 (en) | Pressure Sensor Housing and Configuration | |
WO2006138425A3 (en) | Chip spanning connection | |
GB2438768A (en) | Microfluidics package and method of fabricating the same | |
EP1787947A3 (en) | Mems Flip-Chip Packaging | |
WO2006009717A3 (en) | Collapsible fluid container | |
WO2009125092A3 (en) | Device for aliquoting and filtering blood | |
GB2401920B (en) | Joint sealed and secured by fluid pressure | |
WO2007035862A3 (en) | Semiconductor package | |
US20100038267A1 (en) | Vacuum packaging container | |
US8016522B2 (en) | Heat sink for drill bits of different sizes | |
UA91574C2 (en) | hermetically sealed liquid-CONTAINING bag with welded-in drinking or dispensing spout | |
WO2003010404A8 (en) | High pressure smudging device | |
EP2498317A3 (en) | Preventing stress transfer in OLED display components | |
WO2007078632A3 (en) | Multiported memory with ports mapped to bank sets | |
EP1610044A3 (en) | A fluid cutoff device | |
WO2004103886A3 (en) | Microfabricated micro fluid channels | |
TW200722702A (en) | Heat pipe and method for manufacturing the same | |
TW200718912A (en) | Heat dissipation module and heat pipe thereof | |
WO2008088989A3 (en) | Diverse capacitor packaging for maximizing volumetric efficiency for medical devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06773275 Country of ref document: EP Kind code of ref document: A2 |