WO2007040672A2 - Ultra-small resonating charged particle beam modulator - Google Patents
Ultra-small resonating charged particle beam modulator Download PDFInfo
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- WO2007040672A2 WO2007040672A2 PCT/US2006/022779 US2006022779W WO2007040672A2 WO 2007040672 A2 WO2007040672 A2 WO 2007040672A2 US 2006022779 W US2006022779 W US 2006022779W WO 2007040672 A2 WO2007040672 A2 WO 2007040672A2
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- Prior art keywords
- charged particles
- ultra
- modulating
- resonant structure
- electric field
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
Definitions
- the copyright or mask work owner has
- This disclosure relates to the modulation of a beam of charged particles.
- Electromagnetic radiation is produced by the motion of electrically charged
- Electromagnetic radiation is essentially energy transmitted through space or through a material medium in the form of
- electromagnetic waves The term can also refer to the emission and propagation of such
- Electromagnetic radiation falls into
- electromagnetic radiation at a desired frequency become generally smaller and harder to
- Klystrons are a type of linear beam microwave tube.
- klystron is shown by way of example in Figure l(a). In the late 1930s, a klystron
- klystron 100 is shown as a high-vacuum device with a cathode 102 that emits a well-
- the cavities are sized and designed to
- the electron bunches are formed when an oscillating electric field causes
- the electron stream to be velocity modulated so that some number of electrons increase in
- the induced current can then generate
- a TWT includes a source of electrons that travels
- Backwards wave devices are also known and differ from TWTs in that they
- a backwards wave device uses the concept of a backward group velocity with a
- Backward wave devices could be amplifiers or oscillators.
- Magnetrons are another type of well-known resonance cavity structure
- each magnetron includes an anode, a cathode, a particular wave
- Figure l(b) shows an exemplary magnetron 112.
- the cathode 118 is in the center of the magnetron, as
- the bunching and unbunching electrons set up a
- klystron 120 is shown in Figure l(c). There, the cathode 122 emits electrons toward the
- the reflex klystron 120 has
- the electron beam is modulated (as in other klystrons)
- the electron beam is not terminated at an output cavity
- radio and microwave levels up to, for example, GHz levels
- visible light radiation in the range of 400 Terahertz - 750 Terahertz is not
- the bunched electron beam passes the opening of the
- plasmons can propagate beneath the surface, although they are typically not energetically
- the free electron laser includes a charged particle
- the accelerator injects a
- the undulator periodically modulates in space the
- An optical cavity is defined
- optical gain per passage exceeds the light losses that occur in the optical cavity.
- the effect may be a single electron event, but some
- the beam current is generally, but not
- the grating must exceed the wavelength of light.
- Koops et al. describe a free electron laser using a periodic structure grating for the
- the diffraction grating has a length of approximately
- the device resonance matches the system resonance with resulting higher
- the interaction can provide a transfer of
- photoconductor For example, photoconductor
- semiconductor devices use the absorption process to receive the electromagnetic wave
- extrinsic photoconductor devices operate having transitions across forbidden-
- absorption coefficient A point where the absorption
- the absorption coefficient decreases rapidly is called a cutoff wavelength.
- the absorption coefficient is
- GaAs arsenide
- silicon (Si) can absorb
- the device can work to couple the electromagnetic wave's energy only over a particular
- Coupled Device an intrinsic photoconductor device — can successfully be
- certain extrinsic semiconductors devices can provide for coupling energy at increasing
- Raman spectroscopy is a well-known means to measure the characteristics
- nano-sized features of the substrate cause variation in the intensity and shape of the local
- Drachev et al. describe a Raman imaging and sensing device employing nanoantennas.
- the antennas are metal structures deposited onto a surface.
- the structures are
- the radiation excites a plasmon in the antennas that
- the micro resonant structure can be used for visible light
- micro-resonance structures can rival semiconductor devices in size
- non-semiconductor illuminators such as incandescent, fluorescent, or other
- Those applications can include displays for personal or commercial use,
- illumination for private display such as on computers
- Ultra-small resonant structures that emit at frequencies such as a few tens of
- terahertz can penetrate walls, making them invisible to a transceiver, which is
- X-ray frequencies can also be produced for use in medicine, diagnostics,
- Terahertz radiation from ultra-small resonant structures can be used in many of the following reasons:
- radiation can be coherent and is non-ionizing.
- the frequency of the radiation can be high enough to produce visible light of any
- the devices may be tunable to obtain
- the present devices are easily integrated onto even an existing silicon microchip and can
- FIG. l(a) shows a prior art example klystron.
- FIG. l(b) shows a prior art example magnetron.
- FIG. l(c) shows a prior art example reflex klystron.
- FIG. l(d) depicts aspects of the Smith-Purcell theory.
- FIG. 2 is a schematic of a charged particle modulator that velocity
- FIG. 3 is an electron microscope photograph illustrating an example ultra-
- FIG. 4 is an electron microscope photograph illustrating the very small
- FIG. 5 shows a schematic of a charged particle modulator that angularly
- FIGS. 6(a)-6(c) are electron microscope photographs illustrating various aspects of the invention.
- FIG. 2 depicts a charged particle modulator 200 that velocity modulates a
- a source of charged particles 202 is shown producing a beam 204 consisting of
- the charged particles can be electrons, protons or ions
- filaments planar vacuum triodes, ion guns, electron- impact ionizers, laser ionizers,
- Beam 204 accelerates as it passes through bias structure 206.
- charged particles 202 and accretion bias structure 206 are connected across a voltage.
- Beam 204 then traverses excited ultra-small resonant structures 208 and 210.
- An example of an accretion bias structure is an anode, but the artisan will
- Ultra-small resonant structures 208 and 210 represent a simple form of
- small resonant structures 208 and 210 have a simple or set shape or form.
- resonant structures 208 and 210 encompass a semi-circular shaped cavity having wall 212
- Ultra-small resonant structures 208 and 210 may have identical shapes and
- ultra-small resonant structures 208 and 210 be
- An exemplary embodiment can be positioned with any symmetry relating to the other.
- wall 212 is thin with an inside surface 214
- wall 212 can be thick or thin. Wall 212
- ultra-small resonant structure 208 encompass a cavity circumscribing a vacuum environment. Ultra-small resonant structure 208 can confine a cavity
- a current is excited within ultra-small
- wall 212 If wall 212 is sufficiently thin, then the charge of the current will oscillate on
- ultra-small resonant structures 208 are provided in some exemplary embodiments.
- opening 218 of ultra-small resonant structures 208 and 210 are parallel to beam 204.
- varying electric field modulates the axial motion of beam 204 as beam 204 passes by
- Beam 204 becomes a space-charge wave
- Ultra-small resonant structures can be built in many different shapes. The
- Ultra-small resonant structures 208 and 210 can be constructed with many
- resonant structure may affect the quality factor of the ultra-small resonant structure.
- suitable fabrication materials include silver, high conductivity metals, and
- ultra-small resonant structure 208 may be constructed, including
- small resonant structure is a planar structure, but there is no requirement that the
- modulator be fabricated as a planar structure.
- the structure could be non-planar.
- etching techniques are described that can produce the cavity structure. There, fabrication techniques are described that result in thin metal surfaces suitable for the ultra-small
- Such techniques can be used to produce, for example, the klystron ultra-
- the ultra-small resonant klystron is
- vertical walls can also create the internal resonant cavities (examples shown in FIG. 4)
- the slot in the front of the photo illustrates an entry point for a
- Example cavity structures are shown in
- FIG. 4 and can be created from the fabrication techniques described in the above-
- a cavity wall of 16.5 nm is shown with very smooth surfaces and very
- Such cavity structures can provide electron beam modulation suitable
- FIGS. 4 and 5 are provided by way of illustration and example only. The
- present invention is not limited to the exact structures, kinds of structures, or sizes of
- FIG. 5 shows another exemplary embodiment of a charged particle beam
- the source of charged particles 222 produces beam 224, consisting of one
- bias structure 226 If or more charged particles, which passes through bias structure 226.
- Beam 224 passes by excited ultra-small resonant structure 228 positioned
- ultra-small resonant structure 228 oscillates over a range of values
- FIGS. 6(a)-6(c) are electron microscope photographs illustrating various aspects of the array of multiple charged particle beams (denoted 230).
- structures may be formed, e.g., according to the methods and systems described in related
Abstract
A method and apparatus for modulating a beam of charged particles is described in which a beam of charged particles is produced by a particle source and a varying electric field is induced within an ultra-small resonant structure. The beam of charged particles is modulated by the interaction of the varying electric field with the beam of charged particles.
Description
ULTRA-SMALL RESONATING CHARGED PARTICLE BEAM MODULATOR COPYRIGHT NOTICE [0001] A portion of the disclosure of this patent document contains material which
is subject to copyright or mask work protection. The copyright or mask work owner has
no objection to the facsimile reproduction by anyone of the patent document or the patent
disclosure, as it appears in the Patent and Trademark Office patent file or records, but
otherwise reserves all copyright or mask work rights whatsoever.
RELATED APPLICATIONS
[0002] This application is related to U.S. Patent Application No. 10/917,511 , filed
on August 13, 2004, entitled "Patterning Thin Metal Film by Dry Reactive Ion Etching,"
and U.S. Application No. 11/203,407, filed on August 15, 2005, entitled "Method Of
Patterning Ultra-Small Structures," filed on August 15, 2005, both of which are
commonly owned with the present application at the time of filing, and the entire
contents of each of which are incorporated herein by reference.
FIELD OF INVENTION
[0003] This disclosure relates to the modulation of a beam of charged particles.
INTRODUCTION AND BACKGROUND Electromagnetic Radiation & Waves
[0004] Electromagnetic radiation is produced by the motion of electrically charged
particles. Oscillating electrons produce electromagnetic radiation commensurate in
frequency with the frequency of the oscillations. Electromagnetic radiation is essentially
energy transmitted through space or through a material medium in the form of
electromagnetic waves. The term can also refer to the emission and propagation of such
energy. Whenever an electric charge oscillates or is accelerated, a disturbance
characterized by the existence of electric and magnetic fields propagates outward from it.
This disturbance is called an electromagnetic wave. Electromagnetic radiation falls into
categories of wave types depending upon their frequency, and the frequency range of
such waves is tremendous, as is shown by the electromagnetic spectrum in the following
chart (which categorizes waves into types depending upon their frequency):
[0005] The ability to generate (or detect) electromagnetic radiation of a particular
type (e.g., radio, microwave, etc.) depends upon the ability to create a structure suitable
for electron oscillation or excitation at the frequency desired. Electromagnetic radiation
P aι|t: r;:aτdi,/o y fresquoeniEckie/s,e foer e7xa:;7mgptle, i .s re ,lat .i.ve ,ly easy t .o generat .e usi .ng re ,lat .i.ve ,ly , large or
even somewhat small structures.
ELECTROMAGNETIC WAVE GENERATION
[0006] There are many traditional ways to produce high-frequency radiation in
ranges at and above the visible spectrum, for example, up to high hundreds of Terahertz.
There are also many traditional and anticipated applications that use such high frequency
radiation. As frequencies increase, however, the kinds of structures needed to create the
electromagnetic radiation at a desired frequency become generally smaller and harder to
manufacture. We have discovered ultra-small-scale devices that obtain multiple different
frequencies of radiation from the same operative layer.
[0007] Resonant structures have been the basis for much of the presently known
high frequency electronics. Devices like klystrons and magnetrons had electronics that
moved frequencies of emission up to the megahertz range by the 1930s and 1940s. By
around 1960, people were trying to reduce the size of resonant structures to get even
higher frequencies, but had limited success because the Q of the devices went down due
to the resistivity of the walls of the resonant structures. At about the same time, Smith
and Purcell saw the first signs that free electrons could cause the emission of
electromagnetic radiation in the visible range by running an electron beam past a
diffraction grating. Since then, there has been much speculation as to what the physical
basis for the Smith-Purcell radiation really is.
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[000&] " '"" ' We nave shown that some of the theory of resonant structures applies to
certain nano structures that we have built. It is assumed that at high enough frequencies,
plasmons conduct the energy as opposed to the bulk transport of electrons in the material,
although our inventions are not dependent upon such an explanation. Under that theory,
the electrical resistance decreases to the point where resonance can effectively occur
again, and makes the devices efficient enough to be commercially viable.
[0009] Some of the more detailed background sections that follow provide
background for the earlier technologies (some of which are introduced above), and
provide a framework for understanding why the present inventions are so remarkable
compared to the present state-of-the-art.
Microwaves
[0010] As previously introduced, microwaves were first generated in so-called
"klystrons" in the 1930s by the Varian brothers. Klystrons are now well-known
structures for oscillating electrons and creating electromagnetic radiation in the
microwave frequency. The structure and operation of klystrons has been well-studied
and documented and will be readily understood by the artisan. However, for the purpose
of background, the operation of the klystron will be described at a high level, leaving the
particularities of such devices to the artisan's present understanding.
[0011] Klystrons are a type of linear beam microwave tube. A basic structure of a
klystron is shown by way of example in Figure l(a). In the late 1930s, a klystron
structure was described that involved a direct current stream of electrons within a vacuum
cavity passing through an oscillating electric field. In the example of Figure l(a), a
klystron 100 is shown as a high-vacuum device with a cathode 102 that emits a well-
focused electron beam 104 past a number of cavities 106 that the beam traverses as it
travels down a linear tube 108 to anode 103. The cavities are sized and designed to
resonate at or near the operating frequency of the tube. The principle, in essence,
involves conversion of the kinetic energy in the beam, imparted by a high accelerating
voltage, to microwave energy. That conversion takes place as a result of the amplified
RF (radio frequency) input signal causing the electrons in the beam to "bunch up" into
so-called "bunches" (denoted 110) along the beam path as they pass the various cavities
106. These bunches then give up their energy to the high-level induced RF fields at the
output cavity.
[0012] The electron bunches are formed when an oscillating electric field causes
the electron stream to be velocity modulated so that some number of electrons increase in
speed within the stream and some number of electrons decrease in speed within the
stream. As the electrons travel through the drift tube of the vacuum cavity the bunches
that are formed create a space-charge wave or charge-modulated electron beam. As the
electron bunches pass the mouth of the output cavity, the bunches induce a large current,
much larger than the input current. The induced current can then generate
electromagnetic radiation.
Traveling Wave Tubes
[0013] Traveling wave tubes (TWT) - first described in 1942 - are another well-
known type of linear microwave tube. A TWT includes a source of electrons that travels
the length of a microwave electronic tube, an attenuator, a helix delay line, radio
frequency (RP) input and output, and an electron collector. In the TWT, an electrical
current was sent along the helical delay line to interact with the electron stream.
Backwards Wave Devices
[0014] Backwards wave devices are also known and differ from TWTs in that they
use a wave in which the power flow is opposite in direction from that of the electron
beam. A backwards wave device uses the concept of a backward group velocity with a
forward phase velocity. In this case, the RF power comes out at the cathode end of the
device. Backward wave devices could be amplifiers or oscillators.
Magnetrons
[0015] Magnetrons are another type of well-known resonance cavity structure
developed in the 1920s to produce microwave radiation. While their external
configurations can differ, each magnetron includes an anode, a cathode, a particular wave
tube and a strong magnet. Figure l(b) shows an exemplary magnetron 112. In the
example magnetron 112 of Figure l(b), the anode is shown as the (typically iron) external
structure of the circular wave tube 114 and is interrupted by a number of cavities 116
interspersed around the tube 114. The cathode 118 is in the center of the magnetron, as
shown. Absent a magnetic field, the cathode would send electrons directly outward
*C T/ US 06 / B E!! 779 toward the anode portions forming the tube 114. With a magnetic field present and in
parallel to the cathode, electrons emitted from the cathode take a circular path 118 around
the tube as they emerge from the cathode and move toward the anode. The magnetic
field from the magnet (not shown) is thus used to cause the electrons of the electron beam
to spiral around the cathode, passing the various cavities 116 as they travel around the
tube. As with the linear klystron, if the cavities are tuned correctly, they cause the
electrons to bunch as they pass by. The bunching and unbunching electrons set up a
resonant oscillation within the tube and transfer their oscillating energy to an output
cavity at a microwave frequency.
Reflex Klystron
[0016] Multiple cavities are not necessarily required to produce microwave
radiation. In the reflex klystron, a single cavity, through which the electron beam is
passed, can produce the required microwave frequency oscillations. An example reflex
klystron 120 is shown in Figure l(c). There, the cathode 122 emits electrons toward the
reflector plate 124 via an accelerator grid 126 and grids 128. The reflex klystron 120 has
a single cavity 130. In this device, the electron beam is modulated (as in other klystrons)
by passing by the cavity 130 on its way away from the cathode 122 to the plate 124.
Unlike other klystrons, however, the electron beam is not terminated at an output cavity,
but instead is reflected by the reflector plate 124. The reflection provides the feedback
necessary to maintain electron oscillations within the tube.
[0017] In each of the resonant cavity devices described above, the characteristic
frequency of electron oscillation depends upon the size, structure, and tuning of the
resonant cavities. To date, structures have been discovered that create relatively low
frequency radiation (radio and microwave levels), up to, for example, GHz levels, using
these resonant structures. Higher levels of radiation are generally thought to be
prohibitive because resistance in the cavity walls will dominate with smaller sizes and
will not allow oscillation. Also, using current techniques, aluminum and other metals
cannot be machined down to sufficiently small sizes to form the cavities desired. Thus,
for example, visible light radiation in the range of 400 Terahertz - 750 Terahertz is not
known to be created by klystron-type structures.
[0018] U.S. Patent No. 6,373,194 to Small illustrates the difficulty in obtaining
small, high-frequency radiation sources. Small suggests a method of fabricating a micro-
magnetron. In a magnetron, the bunched electron beam passes the opening of the
resonance cavity. But to realize an amplified signal, the bunches of electrons must pass
the opening of the resonance cavity in less time than the desired output frequency. Thus
at a frequency of around 500 THz, the electrons must travel at very high speed and still
remain confined. There is no practical magnetic field strong enough to keep the electron
spinning in that small of a diameter at those speeds. Small recognizes this issue but does
not disclose a solution to it.
[0019] Surface plasmons can be excited at a metal dielectric interface by a
monochromatic light beam. The energy of the light is bound to the surface and
P1 C IV U S OS / K B 77 '9 propagates as an electromagnetic wave. Surface plasmons can propagate on the surface
of a metal as well as on the interface between a metal and dielectric material. Bulk
plasmons can propagate beneath the surface, although they are typically not energetically
favored.
[0020] Free electron lasers offer intense beams of any wavelength because the
electrons are free of any atomic structure. In U.S. Patent No. 4,740,973, Madey et al.
disclose a free electron laser. The free electron laser includes a charged particle
accelerator, a cavity with a straight section and an undulator. The accelerator injects a
relativistic electron or positron beam into said straight section past an undulator mounted
coaxially along said straight section. The undulator periodically modulates in space the
acceleration of the electrons passing through it inducing the electrons to produce a light
beam that is practically collinear with the axis of undulator. An optical cavity is defined
by two mirrors mounted facing each other on either side of the undulator to permit the
circulation of light thus emitted. Laser amplification occurs when the period of said
circulation of light coincides with the period of passage of the electron packets and the
optical gain per passage exceeds the light losses that occur in the optical cavity.
Smith-Purcell
[0021] Smith-Purcell radiation occurs when a charged particle passes close to a
periodically varying metallic surface, as depicted in Figure l(d).
[0022] Known Smith-Purcell devices produce visible light by passing an electron
beam close to the surface of a diffraction grating. Using the Smith-Purcell diffraction
grating, electrons are deflected by image charges m the grating at a frequency m the
visible spectrum. In some cases, the effect may be a single electron event, but some
devices can exhibit a change in slope of the output intensity versus current. In Smith-
Purcell devices, only the energy of the electron beam and the period of the grating affect
the frequency of the visible light emission. The beam current is generally, but not
always, small. Vermont Photonics notice an increase in output with their devices above a
certain current density limit. Because of the nature of diffraction physics, the period of
the grating must exceed the wavelength of light.
[0023] Koops, et al., U.S. Patent No. 6,909, 104, published November 30, 2000,
(§ 102(e) date May 24, 2002) describe a miniaturized coherent terahertz free electron
laser using a periodic grating for the undulator (sometimes referred to as the wiggler).
Koops et al. describe a free electron laser using a periodic structure grating for the
undulator (also referred to as the wiggler). Koops proposes using standard electronics to
bunch the electrons before they enter the undulator. The apparent object of this is to
create coherent terahertz radiation. In one instance, Koops, et al. describe a given
standard electron beam source that produces up to approximately 20,000 volts
accelerating voltage and an electron beam of 20 microns diameter over a grating of 100
to 300 microns period to achieve infrared radiation between 100 and 1000 microns in
wavelength. For terahertz radiation, the diffraction grating has a length of approximately
1 mm to 1 cm, with grating periods of 0.5 to 10 microns, "depending on the wavelength
of the terahertz radiation to be emitted." Koops proposes using standard electronics to
bunch the electrons before they enter the undulator.
[0024] Potylitsin, "Resonant Diffraction Radiation and Smith-Purcell Effect," 13
April 1998, described an emission of electrons moving close to a periodic structure
treated as the resonant diffraction radiation. Potylitsin' s grating had "perfectly
conducting strips spaced by a vacuum gap."
[0025] Smith-Purcell devices are inefficient. Their production of light is weak
compared to their input power, and they cannot be optimized. Current Smith-Purcell
devices are not suitable for true visible light applications due at least in part to their
inefficiency and inability to effectively produce sufficient photon density to be detectible
without specialized equipment.
[0026] We realized that the Smith-Purcell devices yielded poor light production
efficiency. Rather than deflect the passing electron beam as Smith-Purcell devices do,
we created devices that resonated at the frequency of light as the electron beam passes by.
In this way, the device resonance matches the system resonance with resulting higher
output. Our discovery has proven to produce visible light (or even higher or lower
frequency radiation) at higher yields from optimized ultra-small physical structures.
COUPLING ENERGY FROM ELECTROMAGNETIC WAVES
[0027] Coupling energy from electromagnetic waves in the terahertz range from
0.1 THz (about 3000 microns) to 700 THz (about 0.4 microns) is finding use in numerous
new applications. These applications include improved detection of concealed weapons
and explosives, improved medical imaging, finding biological materials, better
characterization of semiconductors; and broadening the available bandwidth for wireless
communications.
[0028] In solid materials the interaction between an electromagnetic wave and a
charged particle, namely an electron, can occur via three basic processes: absorption,
spontaneous emission and stimulated emission. The interaction can provide a transfer of
energy between the electromagnetic wave and the electron. For example, photoconductor
semiconductor devices use the absorption process to receive the electromagnetic wave
and transfer energy to electron-hole pairs by band-to-band transitions. Electromagnetic
waves having an energy level greater than a material's characteristic binding energy can
create electrons that move when connected across a voltage source to provide a current.
In addition, extrinsic photoconductor devices operate having transitions across forbidden-
gap energy levels use the absorption process (S. M., Sze, "Semiconductor Devices
Physics and Technology," 2002).
[0029] A measure of the energy coupled from an electromagnetic wave for the
material is referred to as an absorption coefficient. A point where the absorption
coefficient decreases rapidly is called a cutoff wavelength. The absorption coefficient is
dependant on the particular material used to make a device. For example, gallium
arsenide (GaAs) absorbs electromagnetic wave energy from about 0.6 microns and has a
cutoff wavelength of about 0.87 microns. In another example, silicon (Si) can absorb
energy from about 0.4 microns and has a cutoff wavelength of about 1.1 microns. Thus,
P C T,/ IJ S O 6 / ≡ 2771Qi the ability to transfer energy to the electrons wilhin the material for making the device is
a function of the wavelength or frequency of the electromagnetic wave. This means the
device can work to couple the electromagnetic wave's energy only over a particular
segment of the terahertz range. At the very high end of the terahertz spectrum a Charge
Coupled Device (CCD) — an intrinsic photoconductor device — can successfully be
employed. If there is a need to couple energy at the lower end of the terahertz spectrum
certain extrinsic semiconductors devices can provide for coupling energy at increasing
wavelengths by increasing the doping levels.
SURFACE ENHANCED RAMAN SPECTROSCOPY (SERS)
[0030] Raman spectroscopy is a well-known means to measure the characteristics
of molecule vibrations using laser radiation as the excitation source. A molecule to be
analyzed is illuminated with laser radiation and the resulting scattered frequencies are
collected in a detector and analyzed.
[0031] Analysis of the scattered frequencies permits the chemical nature of the
molecules to be explored. Fleischmann et al. (M. Fleischmann, P. J. Hendra and A. J.
McQuillan, Chem. Phys. Lett., 1974, 26, 163) first reported the increased scattering
intensities that result from Surface Enhanced Raman Spectroscopy (SERS), though
without realizing the cause of the increased intensity.
[0032] In SERS, laser radiation is used to excite molecules adsorbed or deposited
onto a roughened or porous metallic surface, or a surface having metallic nano-sized
features or structures. The largest increase in scattering intensity is realized with surfaces
with features that are 10-100 nm in size. Research into the mechanisms of SERS over the
past 25 years suggests that both chemical and electromagnetic factors contribute to the
enhancing the Raman effect. (See, e.g., A. Campion and P. Kambhampati, Chem. Soc.
Rev., 1998, 27 241.)
[0033] The electromagnetic contribution occurs when the laser radiation excites
plasmon resonances in the metallic surface structures. These plasmons induce local
fields of electromagnetic radiation which extend and decay at the rate defined by the
dipole decay rate. These local fields contribute to enhancement of the Raman scattering
at an overall rate of E4.
[0034] Recent research has shown that changes in the shape and composition of
nano-sized features of the substrate cause variation in the intensity and shape of the local
fields created by the plasmons. Jackson and Halas (J.B. Jackson and NJ. Halas, PNAS,
2004, 101 17930) used nano-shells of gold to tune the plasmon resonance to different
frequencies.
[0035] Variation in the local electric field strength provided by the induced
plasmon is known in SERS-based devices. In U.S. Patent application 2004/0174521 Al,
Drachev et al. describe a Raman imaging and sensing device employing nanoantennas.
The antennas are metal structures deposited onto a surface. The structures are
illuminated with laser radiation. The radiation excites a plasmon in the antennas that
enhances the Raman scatter of the sample molecule.
[0036] The electric field intensity surrounding the antennas varies as a function of
distance from the antennas, as well as the size of the antennas. The intensity of the local
electric field increases as the distance between the antennas decreases.
Advantages & Benefits
[0037] Myriad benefits and advantages can be obtained by a ultra-small resonant
structure that emits varying electromagnetic radiation at higher radiation frequencies such
as infrared, visible, UV and X-ray. For example, if the varying electromagnetic radiation
is in a visible light frequency, the micro resonant structure can be used for visible light
applications that currently employ prior art semiconductor light emitters (such as LCDs,
LEDs, and the like that employ electroluminescence or other light-emitting principals). If
small enough, such micro-resonance structures can rival semiconductor devices in size,
and provide more intense, variable, and efficient light sources. Such micro resonant
structures can also be used in place of (or in some cases, in addition to) any application
employing non-semiconductor illuminators (such as incandescent, fluorescent, or other
light sources). Those applications can include displays for personal or commercial use,
home or business illumination, illumination for private display such as on computers,
televisions or other screens, and for public display such as on signs, street lights, or other
indoor or outdoor illumination. Visible frequency radiation from ultra-small resonant
structures also has application in fiber optic communication, chip-to-chip signal coupling,
other electronic signal coupling, and any other light-using applications.
T/ US QB /SE 779
[0038] Applications can also be envisioned for ultra-small resonant structures that
emit in frequencies other than in the visible spectrum, such as for high frequency data
carriers. Ultra-small resonant structures that emit at frequencies such as a few tens of
terahertz can penetrate walls, making them invisible to a transceiver, which is
exceedingly valuable for security applications. The ability to penetrate walls can also be
used for imaging objects beyond the walls, which is also useful in, for example, security
applications. X-ray frequencies can also be produced for use in medicine, diagnostics,
security, construction or any other application where X-ray sources are currently used.
Terahertz radiation from ultra-small resonant structures can be used in many of the
known applications which now utilize x-rays, with the added advantage that the resulting
radiation can be coherent and is non-ionizing.
[0039] The use of radiation per se in each of the above applications is not new.
But, obtaining that radiation from particular kinds of increasingly small ultra-small
resonant structures revolutionizes the way electromagnetic radiation is used in electronic
and other devices. For example, the smaller the radiation emitting structure is, the less
"real estate" is required to employ it in a commercial device. Since such real estate on a
semiconductor, for example, is expensive, an ultra-small resonant structure that provides
the myriad application benefits of radiation emission without consuming excessive real
estate is valuable. Second, with the kinds of ultra-small resonant structures that we
describe, the frequency of the radiation can be high enough to produce visible light of any
color and low enough to extend into the terahertz levels (and conceivably even petahertz
or exahertz levels with additional advances). Thus, the devices may be tunable to obtain
any kind of white light transmission or any frequency or combination of frequencies
desired without changing or stacking "bulbs," or other radiation emitters (visible or
invisible).
[0040] Currently, LEDs and Solid State Lasers (SSLs) cannot be integrated onto
silicon (although much effort has been spent trying). Further, even when LEDs and SSLs
are mounted on a wafer, they produce only electromagnetic radiation at a single color.
The present devices are easily integrated onto even an existing silicon microchip and can
produce many frequencies of electromagnetic radiation at the same time.
[0041] A new structure for producing electromagnetic radiation is now described
in which a source produces a beam of charged particles that is modulated by interaction
with a varying electric field induced by a ultra-small resonant structure.
GLOSSARY
[0042] As used throughout this document:
[0043] The phrase "ultra-small resonant structure" shall mean any structure of any
material, type or microscopic size that by its characteristics causes electrons to resonate at
a frequency in excess of the microwave frequency.
[0044] The term "ultra-small" within the phrase "ultra-small resonant structure"
shall mean microscopic structural dimensions and shall include so-called "micro"
structures, "nano" structures, or any other very small structures that will produce
resonance at frequencies in excess of microwave frequencies.
DESCRIPTION OF PRESENTLY PREFERRED EXEMPLARY EMBODIMENTS OF THE
INVENTION
BRIEF DESCRIPTION OF FIGURES
[0045] The invention is better understood by reading the following detailed
description with reference to the accompanying drawings in which:
[0046] FIG. l(a) shows a prior art example klystron.
[0047] FIG. l(b) shows a prior art example magnetron.
[0048] FIG. l(c) shows a prior art example reflex klystron.
[0049] FIG. l(d) depicts aspects of the Smith-Purcell theory.
[0050] FIG. 2 is a schematic of a charged particle modulator that velocity
modulates a beam of charged particles according to embodiments of the present
invention.
[0051] FIG. 3 is an electron microscope photograph illustrating an example ultra-
small resonant structure according to embodiments of the present invention.
[0052] FIG. 4 is an electron microscope photograph illustrating the very small and
very vertical walls for the resonant cavity structures according to embodiments of the
present invention.
[0053] FIG. 5 shows a schematic of a charged particle modulator that angularly
modulates a beam of charged particles according to embodiments of the present
invention.
[0054] FIGS. 6(a)-6(c) are electron microscope photographs illustrating various
exemplary structures according to embodiments of the present invention.
DESCRIPTION
[0055] FIG. 2 depicts a charged particle modulator 200 that velocity modulates a
beam of charged particles according to embodiments of the present invention. As shown
in FIG. 2, a source of charged particles 202 is shown producing a beam 204 consisting of
one or more charged particles. The charged particles can be electrons, protons or ions
and can be produced by any source of charged particles including cathodes, tungsten
filaments, planar vacuum triodes, ion guns, electron- impact ionizers, laser ionizers,
chemical ionizers, thermal ionizers, or ion impact ionizers. The artisan will recognize
that many well-known means and methods exist to provide a suitable source of charged
particles beyond the means and methods listed.
[0056] Beam 204 accelerates as it passes through bias structure 206. The source of
charged particles 202 and accretion bias structure 206 are connected across a voltage.
Beam 204 then traverses excited ultra-small resonant structures 208 and 210.
[0057] An example of an accretion bias structure is an anode, but the artisan will
recognize that other means exist for creating an accretion bias structure for a beam of
charged particles.
[0058] Ultra-small resonant structures 208 and 210 represent a simple form of
ultra-small resonant structure fabrication in a planar device structure. Other more
complex structures are also envisioned but for purposes of illustration of the principles
;:ι'C T/ If J S O G / S 5779 involved the simple structure of Fig. 2 is described. There is no requirement that ultra-
small resonant structures 208 and 210 have a simple or set shape or form. Ultra-small
resonant structures 208 and 210 encompass a semi-circular shaped cavity having wall 212
with inside surface 214, outside surface 216 and opening 218. The artisan will recognize
that there is no requirement that the cavity have a semi-circular shape but that the shape
can be any other type of suitable arrangement.
[0059] Ultra-small resonant structures 208 and 210 may have identical shapes and
symmetry, but there is no requirement that they be identical or symmetrical in shape or
size. There is no requirement that ultra-small resonant structures 208 and 210 be
positioned with any symmetry relating to the other. An exemplary embodiment can
include two ultra-small resonant structures; however there is no requirement that there be
more than one ultra-small resonant structure nor less than any number of ultra-small
resonant structures. The number, size and symmetry are design choices once the
inventions are understood.
[0060] In one exemplary embodiment, wall 212 is thin with an inside surface 214
and outside surface 216. There is, however, no requirement that the wall 212 have some
minimal thickness. In alternative embodiments, wall 212 can be thick or thin. Wall 212
can also be single sided or have multiple sides.
[0061] In some exemplary embodiments, ultra-small resonant structure 208
encompasses a cavity circumscribing a vacuum environment. There is, however, no
requirement that ultra-small resonant structure 208 encompass a cavity circumscribing a
vacuum environment. Ultra-small resonant structure 208 can confine a cavity
accommodating other environments, including dielectric environments.
[0062] In some exemplary embodiments, a current is excited within ultra-small
resonant structures 208 and 210. When ultra-small resonant structure 208 becomes
excited, a current oscillates around the surface or through the bulk of the ultra-small
structure. If wall 212 is sufficiently thin, then the charge of the current will oscillate on
both inside surface 214 and outside surface 216. The induced oscillating current
engenders a varying electric field across the opening 218.
[0063] In some exemplary embodiments, ultra-small resonant structures 208
and 210 are positioned such that some component of the varying electric field induced
across opening 218 exists parallel to the propagation direction of beam 204. The varying
electric field across opening 218 modulates beam 204. The most effective modulation or
energy transfer generally occurs when the charged electrons of beam 204 traverse the gap
in the cavity in less time then one cycle of the oscillation of the ultra-small resonant
structure.
[0064] In some exemplary embodiments, the varying electric field generated at
opening 218 of ultra-small resonant structures 208 and 210 are parallel to beam 204. The
varying electric field modulates the axial motion of beam 204 as beam 204 passes by
ultra-small resonant structures 208 and 210. Beam 204 becomes a space-charge wave or
a charge modulated beam at some distance from the resonant structure.
[0065] Ultra-small resonant structures can be built in many different shapes. The
shape of the ultra-small resonant structure affects its effective inductance and
capacitance. (Although traditional inductance an capacitance can be undefined at some
of the frequencies anticipated, effective values can be measured or calculated.) The
effective inductance and capacitance of the structure primarily determine the resonant
frequency.
[0066] Ultra-small resonant structures 208 and 210 can be constructed with many
types of materials. The resistivity of the material used to construct the ultra-small
resonant structure may affect the quality factor of the ultra-small resonant structure.
Examples of suitable fabrication materials include silver, high conductivity metals, and
superconducting materials. The artisan will recognize that there are many suitable
materials from which ultra-small resonant structure 208 may be constructed, including
dielectric and semi-conducting materials.
[0067] An exemplary embodiment of a charged particle beam modulating ultra-
small resonant structure is a planar structure, but there is no requirement that the
modulator be fabricated as a planar structure. The structure could be non-planar.
[0068] Example methods of producing such structures from, for example, a thin
metal are described in commonly-owned U.S. Patent Application No. 10/917,511
(""Patterning Thin Metal Film by Dry Reactive Ion Etching"). In that application,
etching techniques are described that can produce the cavity structure. There, fabrication
techniques are described that result in thin metal surfaces suitable for the ultra-small
resonant structures 208 and 210.
[0069] Other example methods of producing ultra-small resonant structures are
described in commonly-owned U.S. Application No. 11/203,407, filed on August 15,
2005 and entitled "Method of Patterning Ultra-Small Structures." Applications of the
fabrication techniques described therein result in microscopic cavities and other
structures suitable for high-frequency resonance (above microwave frequencies)
including frequencies in and above the range of visible light.
[0070] Such techniques can be used to produce, for example, the klystron ultra-
small resonant structure shown in FIG. 3. In FIG. 3, the ultra-small resonant klystron is
shown as a very small device with smooth and vertical exterior walls. Such smooth
vertical walls can also create the internal resonant cavities (examples shown in FIG. 4)
within the klystron. The slot in the front of the photo illustrates an entry point for a
charged particle beam such as an electron beam. Example cavity structures are shown in
FIG. 4, and can be created from the fabrication techniques described in the above-
mentioned patent applications. The microscopic size of the resulting cavities is
illustrated by the thickness of the cavity walls shown in FIG. 4. In the top right corner,
for example, a cavity wall of 16.5 nm is shown with very smooth surfaces and very
vertical structure. Such cavity structures can provide electron beam modulation suitable
for higher-frequency (above microwave) applications in extremely small structural
profiles.
IP' C T /"U S O B /1" S E! 77" 9 [0071] FIGS. 4 and 5 are provided by way of illustration and example only. The
present invention is not limited to the exact structures, kinds of structures, or sizes of
structures shown. Nor is the present invention limited to the exact fabrication techniques
shown in the above-mentioned patent applications. A lift-off technique, for example,
may be an alternative to the etching technique described in the above-mentioned patent
application. The particular technique employed to obtain the ultra-small resonant
structure is not restrictive. Rather, we envision ultra-small resonant structures of all types
and microscopic sizes for use in the production of electromagnetic radiation and do not
presently envision limiting our inventions otherwise.
[0072] FIG. 5 shows another exemplary embodiment of a charged particle beam
modulator 220 according to embodiments of the present invention. In these
embodiments, the source of charged particles 222 produces beam 224, consisting of one
or more charged particles, which passes through bias structure 226.
[0073] Beam 224 passes by excited ultra-small resonant structure 228 positioned
along the path of beam 224 such that some component of the varying electric field
induced by the excitation of excited ultra-small resonant structure 228 is perpendicular to
the propagation direction of beam 224.
[0074] The angular trajectory of beam 224 is modulated as it passes by ultra-small
resonant structure 228. As a result, the angular trajectory of beam 224 at some distance
beyond ultra-small resonant structure 228 oscillates over a range of values, represented
by the array of multiple charged particle beams (denoted 230).
[0075] FIGS. 6(a)-6(c) are electron microscope photographs illustrating various
exemplary structures operable according to embodiments of the present invention. Each
of the figures shows a number of U-shaped cavity structures formed on a substrate. The
structures may be formed, e.g., according to the methods and systems described in related
U.S. Patent Application No. 10/917,511, filed on August 13, 2004, entitled "Patterning
Thin Metal Film by Dry Reactive Ion Etching," and U.S. Application No. 11/203,407,
filed on August 15, 2005, entitled "Method Of Patterning Ultra-Small Structures," both
of which are commonly owned with the present application at the time of filing, and the
entire contents of each of have been incorporated herein by reference.
[0076] Thus are described ultra-small resonating charged particle beam modulators
and the manner of making and using same. While the invention has been described in
connection with what is presently considered to be the most practical and preferred
embodiment, it is to be understood that the invention is not to be limited to the disclosed
embodiment, but on the contrary, is intended to cover various modifications and
equivalent arrangements included within the spirit and scope of the appended claims.
Claims
1. An device comprising:
a source producing a beam of charged particles; and
an ultra-small resonant structure inducing a varying electric field interacting
with incoming electromagnetic radiation, whereby said beam of charged particles is
modulated by interacting with said varying electric field.
2. The device of claim 1 wherein said ultra-small resonant structure is a
cavity.
3. The device of claim 1 wherein said ultra-small resonant structure is a
surface plasmon resonant structure.
4. The device of claim 1 wherein said ultra-small resonant structure is a
plasmon resonating structure.
5. The device of claim 1 wherein said ultra-small resonant structure has
a semi-circular shape.
6. The device of claim 1 wherein said ultra-small resonant structure is
symmetric.
7. The device of claim 1 wherein said varying electric field of said
resonant structure modulates the electrons of said electron beam angular trajectory.
8. The device of claim 1 wherein said varying electric field of said
ultra-small resonant structure modulates the axial motion of said electron beam.
9. The device of claim 1 wherein said resonant structure is a cavity
filled with a dielectric material.
10. The device of claim 1 wherein said charged particles are selected
from the group comprising: electrons, protons, and ions.
11. The device of claim 1 wherein said source of charged particles is a
source selected from the group comprising: an ion gun, a tungsten filament, a cathode, a
planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a
thermal ionizer, an ion-impact ionizer.
12. The device of claim 1 wherein said ultra-small resonant structure is
constructed of a material selected from the group comprising: silver (Ag), copper (Cu), a
conductive material, a dielectric, a transparent conductor; and a high temperature
superconducting material.
13. A method of modulating a beam of charged particles comprising:
providing an ultra-small resonant structure;
inducing a varying electric field within the ultra-small resonant structure by
interacting with incoming electromagnetic radiation; and
modulating said beam of charged particles by the interaction of said
varying electric field with said beam of charged particles.
14. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes inducing the varying electric field within a cavity.
15. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes inducing the varying electric field within a surface
16. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes inducing the varying electric field within a semi¬
circular shaped structure.
17. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes inducing the varying electric field within a
symmetrical structure.
18. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes inducing the varying electric field within an
asymmetrical structure.
19. The method of modulating a beam of charged particles of claim 13
wherein said varying electric field of said resonant structure modulates the electrons of
said electron beam angular trajectory.
20. The method of modulating a beam of charged particles of claim 13
wherein said varying electric field of said ultra-small resonant structure modulates the
axial motion of said electron beam.
21. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes inducing the varying electric field within a cavity
filled with a dielectric material.
22. The method of modulating a beam of charged particles of claim 13
wherein said beam of charged particles comprises a beam of electrons.
23. The method of modulating a beam of charged particles of claim 13
wherein said beam of charged particles comprises a beam of protons.
24. The method of modulating a beam of charged particles of claim 13
wherein said beam of charged particles comprises a beam of ions.
25. The method of modulating a beam of charged particles of claim 13
wherein said beam of charged particles is produced by a device selected from the group
comprising: an ion gun; a tungsten filament; a cathode; a planar vacuum triode having a
large parasitic capacitance; an electron-impact ionizer; a laser ionizer; a chemical ionizer;
a thermal ionizer; and an ion-impact ionizer.
26. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes the step of providing a ultra-small resonant
structure constructed of silver.
27. The method of modulating a beam of charged particles of claim 13
wherein said step of inducing includes the step of providing a ultra-small resonant
structure constructed of high temperature superconducting material.
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US11/238,991 US7791290B2 (en) | 2005-09-30 | 2005-09-30 | Ultra-small resonating charged particle beam modulator |
US11/238,991 | 2005-09-30 |
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