WO2007066098A1 - Organic solar cell - Google Patents
Organic solar cell Download PDFInfo
- Publication number
- WO2007066098A1 WO2007066098A1 PCT/GB2006/004547 GB2006004547W WO2007066098A1 WO 2007066098 A1 WO2007066098 A1 WO 2007066098A1 GB 2006004547 W GB2006004547 W GB 2006004547W WO 2007066098 A1 WO2007066098 A1 WO 2007066098A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- cell according
- group
- organic
- electrode
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000003792 electrolyte Substances 0.000 claims abstract description 31
- 239000002253 acid Substances 0.000 claims abstract description 19
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 9
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 7
- 150000007524 organic acids Chemical class 0.000 claims abstract description 7
- 230000003595 spectral effect Effects 0.000 claims abstract description 7
- 150000003839 salts Chemical class 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 26
- 125000000623 heterocyclic group Chemical group 0.000 claims description 23
- 239000000243 solution Substances 0.000 claims description 23
- -1 -Ci Chemical group 0.000 claims description 16
- 239000000984 vat dye Substances 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 13
- 150000001408 amides Chemical class 0.000 claims description 11
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000004743 Polypropylene Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 229920006254 polymer film Polymers 0.000 claims description 8
- 229920001155 polypropylene Polymers 0.000 claims description 8
- WRTMQOHKMFDUKX-UHFFFAOYSA-N triiodide Chemical compound I[I-]I WRTMQOHKMFDUKX-UHFFFAOYSA-N 0.000 claims description 8
- DFPAKSUCGFBDDF-UHFFFAOYSA-N Nicotinamide Chemical group NC(=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011244 liquid electrolyte Substances 0.000 claims description 6
- 239000010411 electrocatalyst Substances 0.000 claims description 5
- 239000011245 gel electrolyte Substances 0.000 claims description 5
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 4
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical group C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical group N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 claims description 4
- 229910006069 SO3H Inorganic materials 0.000 claims description 4
- 229910007674 ZnO—Ga2O3 Inorganic materials 0.000 claims description 4
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- PGEHNUUBUQTUJB-UHFFFAOYSA-N anthanthrone Chemical group C1=CC=C2C(=O)C3=CC=C4C=CC=C5C(=O)C6=CC=C1C2=C6C3=C54 PGEHNUUBUQTUJB-UHFFFAOYSA-N 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 239000001913 cellulose Substances 0.000 claims description 4
- PPSZHCXTGRHULJ-UHFFFAOYSA-N dioxazine Chemical group O1ON=CC=C1 PPSZHCXTGRHULJ-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 4
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 claims description 4
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 4
- 125000001424 substituent group Chemical group 0.000 claims description 4
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 claims description 4
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 claims description 4
- OOWFYDWAMOKVSF-UHFFFAOYSA-N 3-methoxypropanenitrile Chemical compound COCCC#N OOWFYDWAMOKVSF-UHFFFAOYSA-N 0.000 claims description 3
- 229910006074 SO2NH2 Inorganic materials 0.000 claims description 3
- 229910006694 SnO2—Sb2O3 Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- NZBSAAMEZYOGBA-UHFFFAOYSA-N luminogren Chemical group C12=NC3=CC=CC=C3N2C(=O)C2=CC=CC3=CC=CC1=C23 NZBSAAMEZYOGBA-UHFFFAOYSA-N 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- BROQXILFDWZSAC-UHFFFAOYSA-N 1,2-dimethylimidazolidine Chemical compound CC1NCCN1C BROQXILFDWZSAC-UHFFFAOYSA-N 0.000 claims description 2
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 claims description 2
- VWIIJDNADIEEDB-UHFFFAOYSA-N 3-methyl-1,3-oxazolidin-2-one Chemical compound CN1CCOC1=O VWIIJDNADIEEDB-UHFFFAOYSA-N 0.000 claims description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims description 2
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000000149 argon plasma sintering Methods 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229930188620 butyrolactone Natural products 0.000 claims description 2
- ITZXULOAYIAYNU-UHFFFAOYSA-N cerium(4+) Chemical compound [Ce+4] ITZXULOAYIAYNU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 claims description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 claims description 2
- 239000010970 precious metal Substances 0.000 claims description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 125000003368 amide group Chemical group 0.000 claims 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims 2
- SFPQDYSOPQHZAQ-UHFFFAOYSA-N 2-methoxypropanenitrile Chemical compound COC(C)C#N SFPQDYSOPQHZAQ-UHFFFAOYSA-N 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 106
- 239000004065 semiconductor Substances 0.000 description 43
- 239000000975 dye Substances 0.000 description 34
- 239000010408 film Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 22
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 20
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000003993 interaction Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000005693 optoelectronics Effects 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 238000004574 scanning tunneling microscopy Methods 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- HADNSWOICVRFLK-UHFFFAOYSA-N 5a,6,13,13a-tetrahydroquinoxalino[3,2-b]phenazine-3-carboxylic acid Chemical compound C1=CC=C2N=C(CC3C(N=C4C=CC(=CC4=N3)C(=O)O)C3)C3=NC2=C1 HADNSWOICVRFLK-UHFFFAOYSA-N 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 5
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 4
- KUJYDIFFRDAYDH-UHFFFAOYSA-N 2-thiophen-2-yl-5-[5-[5-(5-thiophen-2-ylthiophen-2-yl)thiophen-2-yl]thiophen-2-yl]thiophene Chemical class C1=CSC(C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC=CC=2)=C1 KUJYDIFFRDAYDH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- HDVPIMZXLWNIIP-UHFFFAOYSA-N nickel 5,10,15,20-tetraphenyl-21,23-dihydroporphyrin Chemical compound [Ni].c1cc2nc1c(-c1ccccc1)c1ccc([nH]1)c(-c1ccccc1)c1ccc(n1)c(-c1ccccc1)c1ccc([nH]1)c2-c1ccccc1 HDVPIMZXLWNIIP-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 2
- QFSYADJLNBHAKO-UHFFFAOYSA-N 2,5-dihydroxy-1,4-benzoquinone Chemical compound OC1=CC(=O)C(O)=CC1=O QFSYADJLNBHAKO-UHFFFAOYSA-N 0.000 description 2
- HEMGYNNCNNODNX-UHFFFAOYSA-N 3,4-diaminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1N HEMGYNNCNNODNX-UHFFFAOYSA-N 0.000 description 2
- GSCPDZHWVNUUFI-UHFFFAOYSA-N 3-aminobenzamide Chemical compound NC(=O)C1=CC=CC(N)=C1 GSCPDZHWVNUUFI-UHFFFAOYSA-N 0.000 description 2
- 229920003026 Acene Polymers 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 239000004976 Lyotropic liquid crystal Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002129 infrared reflectance spectroscopy Methods 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- GGNDPFHHUHTCIO-UHFFFAOYSA-N 1h-benzimidazole;perylene-3,4,9,10-tetracarboxylic acid Chemical compound C1=CC=C2NC=NC2=C1.C1=CC=C2NC=NC2=C1.C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O GGNDPFHHUHTCIO-UHFFFAOYSA-N 0.000 description 1
- MWVTWFVJZLCBMC-UHFFFAOYSA-N 4,4'-bipyridine Chemical class C1=NC=CC(C=2C=CN=CC=2)=C1 MWVTWFVJZLCBMC-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- MPMSMUBQXQALQI-UHFFFAOYSA-N cobalt phthalocyanine Chemical class [Co+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 MPMSMUBQXQALQI-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- OGQYPPBGSLZBEG-UHFFFAOYSA-N dimethyl(dioctadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CCCCCCCCCCCCCCCCCC OGQYPPBGSLZBEG-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000005232 molecular self-assembly Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000005062 perfluorophenyl group Chemical group FC1=C(C(=C(C(=C1F)F)F)F)* 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004467 single crystal X-ray diffraction Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B17/00—Azine dyes
- C09B17/06—Fluorindine or its derivatives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/731—Liquid crystalline materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to an organic solar cell based on an organic ionic-crystalline photoelectric layer.
- Photovoltaic devices are intended for converting electromagnetic radiation into electricity. Such devices are used to drive power consuming loads so as to provide, for example, lighting or heating, or to operate electronic equipment. Thereby, an electronic device (e.g., a computer monitor, display, exposure meter, etc.) connected as the external resistive load to a photovoltaic source can operate using converted solar energy. Such power generation applications often involve the charging of batteries or other energy storage devices, so that equipment operation may continue when direct illumination from the sun or other ambient light source is no longer available.
- the term "resistive load” refers to any power consuming or storing device, equipment, or system.
- Photovoltaic devices produce a photogenerated built-in voltage when they are connected to a resistive load and are irradiated by light. When irradiated without any external resistive load, a photovoltaic device generates its maximum possible built-in voltage V called open-circuit voltage (Voc). If a photovoltaic device is irradiated with its electrical contacts shorted, a maximum current, the short-circuit current (Isc), is produced. When actually used to generate power, a photovoltaic device is connected to a finite resistive load and the output power is given as the product of the current and voltage, I x V. The maximum total power generated by a photovoltaic device is inherently incapable of exceeding the product Isc x Voc. When a load value is optimized for maximum power extraction, the current and voltage have values Imax and Vmax, respectively.
- Other criteria of the efficiency of a photovoltaic device can be used as well.
- the external quantum efficiency characterizes the number of electrons generated per one incident radiation quantum (photon) and the internal quantum efficiency is the number of electrons produced per one photon absorbed by the given photovoltaic device.
- inorganic semiconductors such as crystalline, polycrystalline, and amorphous silicon, gallium arsenide, and cadmium telluride
- semiconductor refers to a material capable of conducting electric current, in which the free carriers of the electric charge (electrons and holes) are generated by means of thermal or electromagnetic excitation.
- photovoltaic devices or photovoltaic elements typically comprise a p— n junction formed in a single crystal semiconductor (e.g., silicon) substrate.
- a single crystal semiconductor e.g., silicon
- an n-type surface region is diffused into a p-type silicon substrate and ohmic contacts are applied.
- photons incident upon the n-type surface travel to the junction and the p-type region where they are absorbed in the production of electron— hole pairs.
- the conversion efficiency of conventional photovoltaic devices is limited by a number of factors.
- the built-in voltage is limited by a relatively narrow bandgap of silicon and by the limited extent to which both p- and n-type layers of silicon can be doped. While the built-in voltage of the device can be increased through increased doping of both layers forming the junction, such excess doping tends to reduce the conversion efficiency by reducing the lifetime of charge carriers and thereby the collection efficiency of the device.
- the open- circuit voltage of a typical silicon photovoltaic device is only about 50% of the silicon bandgap value.
- silicon tends to absorb high-energy photons, that is, blue and ultraviolet light, very close to the surface (typically within a micron thick layer).
- photovoltaic devices are characterized by the efficiency of converting solar energy into useful electricity.
- Silicon-based photovoltaic devices reach relatively high conversion efficiencies, on a level of 12— 15%.
- the conversion efficiency of a particular photovoltaic device depends significantly on the quality of materials employed.
- important limiting factor in real devices are leak currents caused by the recombination of photoproduced charge carriers.
- undesired electron— hole interactions cause a portion of electrons to return to the valence band of the semiconductor or to localize in allowed energy levels in the forbidden band of the semiconductor.
- the leak currents are usually caused by the presence of so-called point defects and/or other deviations from the ideal crystalline structure of a semiconductor, which lead to the appearance of such allowed energy states in the forbidden band.
- the electron— hole interactions proceed by a mechanism called 'radiative recombination'.
- the radiative recombination is a "slow" process.
- the process of the radiative recombination offers the only channel for decay of the electron— hole pairs. This process involves no local energy levels and the radiative recombination can proceed directly from a conduction to a valence band.
- a high efficiency of converting the solar energy into electricity is indirect evidence of the absence of more rapid (i.e., more effective) channels of the nonradiative recombination in a given material.
- Materials with molecular stacks oriented perpendicularly to the substrate surface are obtained by epitaxy of planar polycyclic molecules.
- a quasi-epitaxial optoelectronic device structure comprises a substrate, the first layer deposited on said substrate, and the second layer deposited above the first layer.
- Said first layer represents a planar crystalline film of an organic aromatic semiconductor compound and is selected from a group of organic compounds including polyacenes, porphyrins, and their derivatives.
- Said second layer also represents a planar crystalline film of an organic aromatic semiconductor, whose chemical composition (generally, different from that of the first layer) is also selected from a group of organic compounds including polyacenes, prophyrins, and their derivatives.
- the first and second layers have crystalline structures, which are in a certain relationship with each other.
- the first and second layers can be independently selected from a group including 3,4,9, 10-perylenetetracarboxylic dianhydride (PTCDA), 3,4,7,8- naphthalenetetracarboxylic dianhydride (NTCDA), copper phthalocyanine, 3,4,9,10- perylenetetracarboxylic acid bis-benzimidazole, and -oxadiazole derivatives.
- PTCDA 3,4,9, 10-perylenetetracarboxylic dianhydride
- NTCDA 3,4,7,8- naphthalenetetracarboxylic dianhydride
- copper phthalocyanine 3,4,9,10- perylenetetracarboxylic acid bis-benzimidazole, and -oxadiazole derivatives.
- optoelectronic devices have been grown by organic molecular beam deposition.
- the organic substances have been deposited as ultrathin layers only 10 Angstrom (A) thick using organic molecular beam deposition methods.
- PTCDA and NTCDA have been identified as excellent materials for the manufacture of organic optoelectronic IC devices, but any planar organic aromatic semiconductor capable of readily forming a crystalline structure may be used.
- the preferred method of the prior art employs a chamber, comprising an inorganic substrate made of an appropriate material for making electrical contact to the organic structures, and sources of PTCDA and NTCDA.
- the chamber is maintained at a pressure generally below 10 '6 Torr.
- the substrate is spaced from the source of film materials by a minimum distance of 10 cm. During deposition, the substrate is kept at a temperature below 150K, while the PTCDA and NTCDA sources are alternatively heated.
- the reactor chamber must hold an ultrahigh vacuum (down to 10 "6 - 10 ⁇ 10 Torr) and must withstand considerable temperature gradients between closely spaced zones.
- the equipment must include the means of heating sources and cooling substrates, a complicated pumping stage, and facilities for gas admission, temperature and pressure monitoring, and technological process control.
- the high vacuum requirements make the process expensive and limit the substrate dimensions.
- One more disadvantage of said known method is limitation on the substrate materials: only substances retaining their physical, mechanical, optical, and other properties under the conditions of large pressure differences, high vacuum, and considerable temperature gradients can be employed.
- F16CoPc Fully fluorinated cobalt phthalocyanine
- RAIRS reflection-absorption infrared spectroscopy
- XPS and UPS X-ray and ultraviolet photoelectron spectroscopy
- STM scanning tunnelling microscopy
- the UPS spectra of thin films of CoPc, F16CoPc, and nickel tetraphenylporphyrin (NiTPP) on gold were measured and their relative surface charges were compared.
- STM images of single molecular layers of F16CoPc, NiTPP, and NiTPP-FI 6CoPc and NiTPP-CoPc mixtures were obtained.
- NiTPP-FI 6CoPc spontaneously formed a well-ordered 1 :1 structure
- NiTPP-CoPc formed a two-dimensional solid solution.
- Ultrathin films prepared from inorganic and organic materials are of increasing interest as hybrid nanocomposite materials.
- the formation of nanostructured ultrathin films of montmorillonite clay (MONT) and a bicationic sexithiophene derivative (6TN) was investigated using the layer-by- layer self-assembly approach (see X. Fan, J. Locklin, J. Ho Youk, et al., Nanostructured
- the available literature presents no examples of the films with the vertical orientation of stacks prepared by a low-cost and effective way of solution application on the substrate.
- the films with the horizontal orientation of stacks are usually obtained using the lyotropic liquid crystal (LLC) solutions of sulfoderivatives (see: U.S. Patent Nos. 5,739,296 and 6,049,428 and the following publications: P. Lazarev et al., X-ray Diffraction by Large Area Organic Crystalline Nanofilms, Molecular Materials, 14(4), 303-311 (2001), and Y. Bobrov, Spectral Properties of Thin Crystal Film Polarizers, Molecular Materials, 14(3), 191-203 (2001 )).
- LLC lyotropic liquid crystal
- This network controls and templates new surface phases formed by subsequently deposited fullerene molecules. It was found that the open network acts as a 2D array of large pores of sufficient capacity to accommodate several large guest molecules and serves as a template for the formation of an ordered fullerene layer.
- TMA trimesic acid
- TMA trimer [(TMA) 3 ] solution phase nucleation species which is a likely precursor to the flower form of TMA; however, an explanation based on differential solvent stabilization of the surface monolayer of flower and chickenwire structures cannot be ruled out.
- the acid- amide H-bonding is sufficiently strengthened by donor acidity and acceptor basicity in 3, so that the role of the Ph-PhF synthon is weaker because the aromatic rings stack with lateral offset.
- the complex C 6 H 5 COOH 1 C 6 F 5 CONH 2 (4) could not be obtained under similar crystallization conditions.
- the crystal structure of C 6 F 5 CONH 2 was also determined to compare the molecular conformation and H-bonding with motifs in the cocrystals.
- 4-hydroxybenzoic acid (1) crystallizes into three crystalline forms: (i) monoclinic from a DMSO solution (1A), (ii) triclinic from a solution in 1 :1 DMSO/hot ethyl acetate (1 B), and (iii) triclinic from a pyridine solution (1 C) (see Jayaraman et al., Crystal Growth & Design, 4, 1403-1409 (2004)).
- the formation of these pseudopolymorphs and the structural similarity of their packing motifs can be rationalized in terms of few-multipoint solute-solvent interactions.
- the crystallographic aspects pertaining to the influence of solvent molecules towards the formation of H-bonded network structures are described. In addition to the strong H- bonds, intermolecular C-H--O, C-H- ⁇ , and ⁇ - ⁇ interactions were found to stabilize the crystal structures.
- the structures had increasing degree of complexity in the overall H-bonded network.
- the structure of 1 comprises polymeric H-bonded chains of associated 4,4-DP and ICA molecules that propagate through complementary sites on the ICA molecules.
- the structure of 2 consisted of two parallel polymeric H-bonded chains, each involving associated 4,4-DP and 3-ABA molecules cross-linked through complementary 3-ABA sites.
- the structure of 3 was an extensive 3-dimensional H-bonded network involving all H-bonded donor and acceptor sites on the constituent molecules. In each case, the positions and directions of the N-H groups were important in determining the final lattice network.
- Crystalline silicon solar cells have been well known and widely utilized as devices for directly converting light into electric energy in the field of weak power consumption and as independent power sources.
- Crystalline silicon solar cells are made predominantly of single- crystalline or amorphous silicon.
- the production of silicon single crystals and amorphous silicon requires enormous amounts of energy and, in order to recover energy consumed for manufacturing silicon-based cells, electric power generation needs to be carried out continuously for nearly a ten-year long period.
- solar cells utilizing dye sensitizers have received much attention (see B. O'Regan and M. Gratzel, A Low-Cost, High-Efficiency Solar Cell Based on Dye-Sensitized Colloidal TiO 2 Film, Nature, 353, 737 - 740 (1991); M.
- Figure 1 shows the cross section of a prior art dye-sensitized solar cell
- Figure 2 shows the cross section of a solar cell according to one embodiment of the present invention.
- Figure 3 shows the cross section of a solar cell according to another embodiment of the present invention.
- Dye-sensitized solar cells differ from the conventional semiconductor devices in that they separate the functions of light absorption and charge carrier transport.
- n-type semiconductor materials such as TiO 2
- current is generated when the absorption of photons by dye molecules leads to the injection of electrons into the conduction band of the semiconductor (see Figure 1).
- the dye In order to close the circuit, the dye must be regenerated at the expense of the electron transfer from redox species in solution, which are subsequently reduced at the counter electrode.
- a dye-sensitized solar cell consists of two transparent substrates 1 and 2 (e.g., glass plates) with transparent conducting layers 3 and 4 (e.g., tin oxide (SnO 2 ) films).
- Said substrates and conducting layers form the first electrode (photoelectrode) 5 and the second electrode (counter electrode) 6.
- One side of the photoelectrode is coated with a porous layer 7 of a wide-bandgap semiconductor, usually TiO 2 , which is sensitized for visible light by an adsorbed dye film.
- the semiconductor layer 7 is deposited onto conducting layer 3 from a colloidal solution and has a large specific surface.
- This semiconductor layer typically with a thickness of 10 ⁇ m and a porosity of about 50%, has a surface area (available for dye chemisorption) more than a thousand times that of a flat layer of the same size.
- Short-term sintering at 45O 0 C leads to the formation of electrical contacts between particles in the semiconductor layer, which are depicted by open circles 8 in Figure 1.
- the dimensions of particles and pores making up the porous semiconductor layer 7 are determined by the size of particles in the colloidal solution.
- the internal surface area of the porous semiconductor layer 7 depends on the particle size and the layer thickness. These parameters should be optimized so as to provide for the effective light collection, while maintaining the pore size large enough to allow the redox electrolyte 9 to diffuse easily.
- Alternative wide- bandgap oxides such as ZnO and Nb 2 O 5 can be used as well.
- the space between the two electrodes is filled with electrolyte 9, which contains redox couples such as iodide (Q/triiodide (I 3 " ).
- the dye molecules 10 which are depicted in Figure 1 by dark contours surrounding the white circles, are adsorbed on TiO 2 particles. Upon the absorption of incident photons 11 , the dye molecules inject electrons into TiO 2 particles on which they are adsorbed. The electrons are transported via TiO 2 particles (which are sintered together at their contact points) until they reach the conducting layer 3.
- the oxidized dye species resulting from the photoinduced electron transfer are reduced by iodide (l ⁇ ) species in the electrolyte that fills pores in the semiconductor layer 7.
- the remaining triiodide (I 3 " ) species diffuse to the counter electrode, where they are converted back to iodide (f) by electrons arriving via an external chain with load 12.
- Dye-sensitized solar cells are expected to serve as solar cells for the next generation because of simplicity and efficiency of fabrication technology, reduced material costs, and the like.
- One approach to manufacturing dye-sensitized solar cells has been described in J. Am Ceram. Soc, 80(12), 3157-3171 (1997), according to which a dye sensitizer (such as a transition metal complex) is adsorbed on the surface of a titanium oxide layer representing a porous
- a dye-sensitized solar cell is manufactured as follows: a transparent substrate, on which a transparent conducting layer and a semiconductor layer of titanium oxide are formed, is immersed in a solution containing a dye sensitizer, so that the dye sensitizer is adsorbed on the semiconductor surface. Then, an electrolyte solution containing redox species is applied dropwise onto the semiconductor layer. Finally, a counter electrode is stacked above the resulting semiconductor layer.
- the solar cell thus obtained is irradiated with visible light from the side of the semiconductor layer, the dye sensitizer supported on the semiconductor layer absorbs the light so that electrons in the dye sensitizer molecules are excited.
- solar cells have to be optimized so as to increase the generated current (short-circuit current), the open- circuit voltage, and the durability.
- the open-circuit voltage it is necessary to decrease a reverse current passing from the semiconductor layer to the dye sensitizer and/or to the electrolyte layer.
- the dyes used as sensitizers in prior art possessed high resistivities. Accordingly, these dyes were used as thin monolayers adsorbed on the surface of the semiconductor layer. However, a thin dye layer does not provide for the absorption of all or a substantial part of the incident light. Therefore, it is necessary to increase the thickness of the dye layer so as to increase the absorbed light fraction. Unfortunately, thick sensitizer layers lead to a considerable increase in the serial resistance of a solar cell, which, in turn, results in a decrease in the photovoltaic conversion efficiency of the cell.
- porous semiconductor layers have been used in prior art.
- semiconductor layer typically having a thickness of 10 ⁇ m and a porosity of about 50%, has a surface area (available for dye adsorption) more than a thousand times that of a flat, simple nonporous electrode of the same size. Then, even if the dye is adsorbed as a monomolecular layer, a sufficient amount of it can be retained on a given electrode area so as to provide the absorption of almost all of the incident light.
- Another drawback of the dye-sensitised solar cell known in prior art is that the dye may completely block pores in the semiconductor layer, thus hindering the penetration of electrolyte into these pores.
- the present invention provides an organic acid of general structure
- Het is a planar conjugated heterocyclic molecular system
- X is an acid group
- n 1 , 2, 3, 4, 5, 6, 7 or 8,
- Y is an amide of acid group
- n 1 , 2, 3 or 4,
- R is a substituent selected from the list comprising -CH 3 , -C 2 H 5 , -NO 2 , -Cl, -Br, -F, -
- the present invention provides an organic solar cell comprising: a first electrode and a second electrode spaced from each other; an organic ionic-crystalline photoelectric layer situated between the first electrode and the second electrode and contacting with the first electrode; and an electrolyte which is situated between the organic ionic-crystalline photoelectric layer and the second electrode and impregnates the organic ionic-crystalline photoelectric layer.
- the organic ionic-crystalline photoelectric layer is capable of absorbing electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm.
- This layer consists of rodlike supramolecules, which are comprised of the molecules of at least one organic compound of the general structural formula where Het is a planar conjugated heterocyclic system; X is an acid group; m is 1 , 2, 3, 4, 5, 6, 7 or 8; Y is an acid amide group; n is 0, 1 , 2, 3 or 4; R is a substituent selected from the list including - CH3, -C2H5, -NO2, -Cl, -Br, -F, -CF3, -CN, -OH, OCH3, -OC2H5, -OCH3, -OCN, -SCN -NH2, - NHCOCH3, and -CONH2; z is 0, 1 ,2, 3 or 4, K is a counterion selected from the list comprising H + , NH +
- the present invention provides an organic solar cell based on a new organic ionic- crystalline photoelectric layer with a resistivity approximately equal to the resistivity of crystalline or amorphous silicon (see Figure 2 and Figure 3). Therefore, the disclosed solar cell may contain a thick photoelectric ionic-crystalline layer 13 having at least one thousand monolayers. The use of thick photosensitive layers considerably increases the fraction of absorbed incident light at an insignificant increase in the serial resistance of the cell. Thus, the disclosed organic solar cell employs the ionic-crystalline layer as an active photosensitive element.
- the organic ionic- crystalline photoelectric layer is situated between the first electrode 5 and the second electrode 6 and contacts with the first electrode and the electrolyte.
- the organic ionic-crystalline photoelectric layer 13 consists of rodlike supramolecules 14, which are oriented both predominantly
- the organic ionic-crystalline photoelectric layer is impregnated with electrolyte 9 containing redox couples. This electrolyte provides electric contact with the second electrode 6.
- the disclosed organic solar cell operates as follows.
- the thick organic ionic-crystalline photoelectric layer which is made of disclosed organic dye compound, is formed on the surface of the first electrode. Photoexcitation of the dye results in the injection and passage of electrons or holes along the rodlike supramolecules and their subsequent injection into the first electrode. The initial state of the dye is subsequently restored by electron (or hole) donation from the electrolyte that permeates into the organic ionic-crystalline photoelectric layer.
- the electrolyte is usually an organic solvent containing a redox system such as the iodide/triiodide couple. Regeneration of the organic dye compound by iodide eliminates recapture of the conduction band electrons by the oxidized dye. The iodide species are regenerated, in turn, by the reduction of triiodide at the second electrode, the circuit being closed due to electron migration via an external chain with load.
- the organic ionic-crystalline photoelectric layer is made of a conducting organic compound.
- at least one of said electrodes is transparent.
- at least one acid group is carboxy group (COOH).
- at least one acid group is sulfonic group (SO3H).
- at least one acid amide group is an amide of carboxylic acid (CONH2).
- at least one acid amide group is an amide of sulfonic acid (SO2NH2).
- the organic compound comprises carboxylic group COOH and group of carboxylic acid amide CONH2 and the rodlike supramolecules are oriented predominantly perpendicularly to the surface of the first electrode.
- the organic compound comprises sulfonic group SO3H and the rodlike supramolecules are oriented predominantly parallel to the surface of the first electrode.
- the planar conjugated heterocyclic system is a vat dye comprising anthraquinone fragments.
- Table 1 shows some examples of vat dyes comprising anthraquinone fragments of the general structural formula corresponding to structures 1-11.
- the planar conjugated heterocyclic system is a vat dye comprising perylene fragments.
- Table 2 shows some examples of vat dyes comprising perylene fragments of the general structural formula corresponding to structures 12-41
- the planar conjugated heterocyclic system is a vat dye comprising anthanthrone fragments.
- Table 3 shows some examples of vat dyes comprising such anthanthrone fragments of the general structural formula corresponding to structures 42 and 43.
- the planar conjugated heterocyclic system is a dye comprising quinoxaline fragments.
- Table 4 shows some examples of dyes comprising such quinoxaline fragments of the general structural formula corresponding to structures 44-55.
- the planar conjugated heterocyclic system comprises a dioxazine fragment.
- Table 5 shows some examples of dyes comprising such dioxazine fragments of the general structural formula corresponding to structures 56-57.
- the planar conjugated heterocyclic system comprises a quinacridone fragment.
- Table 6 shows some examples of dyes comprising such quinacridone fragments of the general structural formula corresponding to structures 58-59. Table 6. Examples of dyes comprising planar conjugated quinacridone fragments
- the planar conjugated heterocyclic system comprises naphthoylenebenzimidazole fragments.
- Table 7 shows some examples of such systems of the general structural formula corresponding to structures 60-61. Table 7. Examples of dyes comprising planar conjugated
- planar conjugated heterocyclic system comprises phthalocyanine of the general structural formula 62:
- the organic ionic-crystalline photoelectric layer is substantially insoluble in the electrolyte.
- the first electrode comprises a transparent substrate and a conducting film that is formed on the surface of the transparent substrate and is in contact with the organic ionic-crystalline photoelectric layer.
- the transparent substrate is a polymer film.
- said polymer film is made of a material selected from the group comprising poly(ethylene terephthalate) (PET), poly(ethylene naphthalate) (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAC).
- said conducting film is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga 2 O 3 , ZnO-AI 2 O 3 , and SnO 2 -Sb 2 O 3 .
- ITO indium tin oxide
- FTO fluorine tin oxide
- ZnO-Ga 2 O 3 ZnO-AI 2 O 3
- SnO 2 -Sb 2 O 3 SnO 2 -Sb 2 O 3
- the second electrode also carries the photocurrent over the width of each solar cell.
- the second electrode must be well conducting and possessing low overvoltage for the reduction of redox couples.
- the second electrode comprises a transparent substrate and a two-layer conducting film, with the first and second conducting layers formed on the inner surface of the substrate facing electrolyte.
- the transparent substrate of the second electrode is a polymer film.
- said polymer film is made of a material selected from the group comprising polyethylene terephthalate (PET), polyethylene naphthalate) (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAC).
- the first conducting layer of the two-layer conducting film is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga 2 O 3 , ZnO-AI 2 O 3 and SnO 2 - Sb 2 O 3 .
- the second conducting layer of the two- layer conducting film is made of a precious metal.
- the second conducting layer is made of a porous material. Any convenient conducting material can be used in the second conducting layer. The use of a porous conducting layer substantially increases conversion efficiency of a solar cell due to extension of the effective interaction area of said porous conducting layer with the electrolyte.
- the organic solar cell further comprises an anti-reflection film formed on the surface of the first electrode opposite to the surface facing the second electrode.
- the organic solar cell further comprises an ultraviolet absorbing film formed on the surface of the first electrode opposite to the surface facing the second electrode.
- the ultraviolet absorbing film is made of a polymer.
- the organic ionic-crystalline photoelectric layer comprises light-scattering particles.
- the surface of the second electrode facing the first electrode is further coated with a thin layer of an electrocatalyst facing the electrolyte.
- the electrocatalyst is platinum. Platinum is the preferred material for the use as electro-catalyst, since it is an excellent catalyst for triiodide reduction.
- liquid electrolyte leakage and the possible corrosion of the platinum second electrode as a result of its interaction with the triiodide/iodide couple may be critical factors limiting the long- term performance of a dye-sensitized solar cell, especially at elevated temperatures.
- the liquid electrolyte is replaced by a polymer gel electrolyte.
- said electrolyte is a gel electrolyte containing a redox system.
- said gel electrolyte is made of 3-methoxypropionitrile (MPN)-based liquid electrolyte solidified by poly(vinylidene fluoride)-hexafluoropropylene (PVDF-HFP) copolymer.
- MPN 3-methoxypropionitrile
- PVDF-HFP poly(vinylidene fluoride)-hexafluoropropylene
- said electrolyte is a liquid electrolyte selected from the group of electrolytes comprising the redox couple of cerium(lll) sulfate and cerium(IV), redox couple of iodide (Q and triiodide (I 3 " ), redox couple of sodium bromide and bromine, and redox couple of lithium iodide and iodine in solution in one or more solvents selected from the group including water, N-methyloxazolidinone, nitromethane, propylene carbonate, ethylene carbonate, butyrolactone, dimethyl imidazolidine, N- methylpyrrolidine, and mixtures of said solvents.
- the organic solar cell further comprises an insulating porous layer situated between the organic ionic- crystalline photoelectric layer and the second electrode, wherein the electrolyte fills the pores of said insulating porous layer.
- Said insulating porous layer is required to prevent short circuit between the organic ionic-crystalline photoelectric layer and the second electrode.
- the insulating layer may, at the same time, act as a diffuse reflector that reflects light that has not yet been absorbed back into the organic ionic-crystalline photoelectric layer.
- the present invention provides an inexpensive and relatively simple fabrication technology of organic ionic-crystalline photoelectric layers.
- This example describes the preparation of an organic ionic-crystalline photoelectric layer from a solution of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid (carboxylic acid of base structure 48 in Table 4)
- Synthesis is performed via condensation of 2,5-dihydroxy-p-benzoquinone with o- phenylenediamine and 3,4-diaminobenzoic acid.
- a mixture of 1.40 g (0.01 mole) of 2,5-dihydroxy-p- benzoquinone and 1.08 g (0.01 mole) of o-phenylenediamine in 50 ml of acetic acid is stirred on boiling for 30 min. Then 1.52 g (0.01 mole) of 3,4-diaminobenzoic acid is added to the boiling mixture during 16 hours.
- the precipitate of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid is separated by filtration and washed with acetic acid.
- the isolated product is purified by crystallization from a mixture of acetic acid and DMF.
- the final product yield is 2.54 g.
- a solution of 1.0 g of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid in 35.0 g of deionized water is stirred for 5 min at a temperature of 2O 0 C. Then, 1.3 ml of a 10% aqueous ammonia solution is added and the mixture is stirred until complete dissolution.
- An appropriate substrate is sequentially washed with surfactants and with deionized water and then dried with airflow from a compressor.
- the pretreated substrate is coated with the above solution using Mayer rod #2.5 moved at a linear rate of 15 mm/s, a temperature of 20 0 C, and a relative humidity of 65%.
- the film is dried at the same humidity and temperature.
- the duration, humidity, and temperature of drying are selected so as to ensure 95% removal of solvent from the solution while retaining the porous structure of the dye-sensitizer layer after termination of the drying.
- the obtained film is characterized by measuring the specific resistance in the direction of rodlike supramolecules, which are approximately perpendicular to the substrate surface. The measured value of said specific resistance is in the range from 190 to 200 ohm-cm.
- the example describes the preparation of an organic ionic-crystalline photoelectric layer, which is similar to the procedure described in Example 1 B.
- the drying stage is replaced by an annealing.
- a solution of 1.0 g of 5a,6,13,13a-tetrahydroquinoxalino[2,3- b]phenazine-2 carboxylic acid in 35.0 g of deionized water is stirred for 5 min at a temperature of 20 0 C.
- 1.3 ml of a 10% aqueous ammonia solution is added and the mixture is stirred until complete dissolution.
- An appropriate substrate is sequentially washed with surfactants and with deionized water and then dried with airflow from a compressor.
- the pretreated substrate is coated with the above solution using Mayer rod #2.5 moved at a linear rate of 15 mm/s, a temperature of 20 0 C, and a relative humidity of 65%.
- the film is annealed at a temperature up to 370 0 C.
- the duration, humidity, and temperature of annealing are selected so as to ensure 95% removal of carboxylic groups from the organic ionic-crystalline photoelectric layer, while retaining the porous structure after termination of the annealing.
- the obtained film is characterized by measuring the specific resistance in the direction of rodlike supramolecules, which are approximately perpendicular to the substrate surface. The measured value of said specific resistance is in the range from 190 to 200 ohm-cm.
Abstract
The present invention relates to an organic solar cell based on an organic ionic-crystalline photoelectric layer. In a preferred embodiment, the present invention provides an organic acid of general structure: Formula (I) wherein said acid absorbs electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm, and aqueous solution of its water- soluble salt is capable of forming a photoelectric layer of rodlike supramolecules on a substrate. In another preferred aspect, the present invention provides an organic solar cell comprising two electrodes facing each other, an organic ionic-crystalline photoelectric layer situated between two electrodes and contacting with the first electrode and an electrolyte which is situated between the organic ionic-crystalline photoelectric layer and the second electrode and impregnates the organic ionic-crystalline photoelectric layer. The organic ionic-crystalline photoelectric layer is capable of absorbing electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm. This layer consists of rodlike supramolecules, which are comprised of the molecules of at least one organic compound of the general structural Formula (II).
Description
ORGANIC SOLAR CELL
The present invention relates to an organic solar cell based on an organic ionic-crystalline photoelectric layer.
Photovoltaic devices are intended for converting electromagnetic radiation into electricity. Such devices are used to drive power consuming loads so as to provide, for example, lighting or heating, or to operate electronic equipment. Thereby, an electronic device (e.g., a computer monitor, display, exposure meter, etc.) connected as the external resistive load to a photovoltaic source can operate using converted solar energy. Such power generation applications often involve the charging of batteries or other energy storage devices, so that equipment operation may continue when direct illumination from the sun or other ambient light source is no longer available. As used herein, the term "resistive load" refers to any power consuming or storing device, equipment, or system.
Photovoltaic devices produce a photogenerated built-in voltage when they are connected to a resistive load and are irradiated by light. When irradiated without any external resistive load, a photovoltaic device generates its maximum possible built-in voltage V called open-circuit voltage (Voc). If a photovoltaic device is irradiated with its electrical contacts shorted, a maximum current, the short-circuit current (Isc), is produced. When actually used to generate power, a photovoltaic device is connected to a finite resistive load and the output power is given as the product of the current and voltage, I x V. The maximum total power generated by a photovoltaic device is inherently incapable of exceeding the product Isc x Voc. When a load value is optimized for maximum power extraction, the current and voltage have values Imax and Vmax, respectively.
The estimation of conversion efficiency of a photovoltaic device is the fill factor, ff, defined as ff = (Imax- Vmax)/(lsc- Voc), where ff is always less than unity, as Isc and Voc are never obtained simultaneously in real practice. Nevertheless, as ff approaches unity, the device is more efficient. Other criteria of the efficiency of a photovoltaic device can be used as well. In particular, the external quantum efficiency characterizes the number of electrons generated per one incident radiation quantum (photon) and the internal quantum efficiency is the number of electrons produced per one photon absorbed by the given photovoltaic device.
It is similarly possible to give definitions of efficiency for other photosensitive optoelectronic devices.
There are photosensitive optoelectronic devices of various types (solar cells,
photodetectors, photoresistors, etc.) based on inorganic semiconductors (see, e.g., S. M. Sze, Physics of Semiconductor Devices, Wiley-lnterscience, New York, 1981 ). Previously, inorganic semiconductors (such as crystalline, polycrystalline, and amorphous silicon, gallium arsenide, and cadmium telluride) were the main materials used for the development of solar cells. The term "semiconductor" refers to a material capable of conducting electric current, in which the free carriers of the electric charge (electrons and holes) are generated by means of thermal or electromagnetic excitation.
Conventional photovoltaic devices or photovoltaic elements typically comprise a p— n junction formed in a single crystal semiconductor (e.g., silicon) substrate. Typically, an n-type
surface region is diffused into a p-type silicon substrate and ohmic contacts are applied. When the device is exposed to solar radiation, photons incident upon the n-type surface travel to the junction and the p-type region where they are absorbed in the production of electron— hole pairs.
The conversion efficiency of conventional photovoltaic devices, however, is limited by a number of factors. First, the built-in voltage is limited by a relatively narrow bandgap of silicon and by the limited extent to which both p- and n-type layers of silicon can be doped. While the built-in voltage of the device can be increased through increased doping of both layers forming the junction, such excess doping tends to reduce the conversion efficiency by reducing the lifetime of charge carriers and thereby the collection efficiency of the device. As a consequence, the open- circuit voltage of a typical silicon photovoltaic device is only about 50% of the silicon bandgap value. Second, silicon tends to absorb high-energy photons, that is, blue and ultraviolet light, very close to the surface (typically within a micron thick layer). As a consequence, many of the high- energy photons are absorbed near the surface of the n-type region, causing charge carriers generated by such absorption to recombine at the surface and be lost as mediators of photocurrent. Still a third limiting factor resides in the fact that photons of lower energy, representing red light and near infrared radiation, tend to penetrate deep into silicon before they are absorbed. While minority carriers created by deep-layer absorption can contribute to the photocurrent, provided that minority carrier lifetimes are sufficient to permit them to drift into the junction region, the high-temperature diffusion step required to form the n-type region significantly reduces the minority carrier lifetime in p-type silicon substrates. As a consequence, many charge carriers created by deep-layer absorption are also lost as mediators of photocurrent.
As noted above, photovoltaic devices (including solar cells) are characterized by the efficiency of converting solar energy into useful electricity. Silicon-based photovoltaic devices reach relatively high conversion efficiencies, on a level of 12— 15%. The conversion efficiency of a particular photovoltaic device depends significantly on the quality of materials employed. For example, important limiting factor in real devices are leak currents caused by the recombination of photoproduced charge carriers. In other words, undesired electron— hole interactions cause a portion of electrons to return to the valence band of the semiconductor or to localize in allowed energy levels in the forbidden band of the semiconductor. The leak currents are usually caused by the presence of so-called point defects and/or other deviations from the ideal crystalline structure of a semiconductor, which lead to the appearance of such allowed energy states in the forbidden band.
When the amount and influence of the aforementioned defects are small, the electron— hole interactions proceed by a mechanism called 'radiative recombination'. As it possesses a sufficiently large characteristic time, the radiative recombination is a "slow" process. In the absence of defects, the process of the radiative recombination offers the only channel for decay of the electron— hole pairs. This process involves no local energy levels and the radiative recombination can proceed directly from a conduction to a valence band. As a result, a high efficiency of converting the solar energy into electricity is indirect evidence of the absence of more rapid (i.e., more effective) channels of the nonradiative recombination in a given material.
There are some other disadvantages of photovoltaic devices based on inorganic semiconductors, besides those mentioned above. In particular, such devices are expensive.
Manufacturing of these devices requires complicated technology involving high-cost equipment and sophisticated processing methods, to provide semiconductor layers and multilayer structures of large area and free of defects.
There have been numerous attempts at reducing the cost of production of photosensitive optoelectronic devices, including solar cells. Organic photoconductors and organic semiconductors have also considered as candidate materials because of the option to produce organic films by deposition from solutions or by other low-cost techniques. However, the conversion efficiency of solar cells employing such organic materials was always less than the conversion efficiency of conventional solar cells based on inorganic materials. Practical on-ground applications require greater values of the photovoltaic conversion efficiency.
Experimental data has shown that the efficiency of solar cell and other organic-based optoelectronic devices increases when the molecular planes in molecular crystals forming organic semiconductor films in such devices are oriented predominantly parallel to the substrate surface and electrodes (see P. Fenter et. a/., Layer-by-Layer Quasi-Epitaxial Growth of a Crystalline Organic Thin Film", J. Crystal Growth, 152, 65-72 (1995); S. R. Forrest and P. E. Burrows, Growth Modes of Organic Semiconductor Thin Film Using Organic Molecular Beam Deposition: Epitaxy, van der Waals Epitaxy, and Quasi-Epitaxy", Supramol. ScL, 4, 127-139 (1997)). This fact implies the existence of channels for the transfer of electrons and holes along the axis of the π-π interaction in rodlike stacks inside crystal particles, which provides high mobility of charges (facilitating the transport of electrons and holes). The short vertical way between electrodes also reduces the probability of undesired recombination of charge carriers.
Materials with molecular stacks oriented perpendicularly to the substrate surface are obtained by epitaxy of planar polycyclic molecules.
There is a known organic quasi-epitaxial method intended for the formation of
optoelectronic devices (see US Patent No. 5,315,129, Forrest et al., Organic Optoelectronic Devices and Methods). According to this method, the planes of organic molecules are oriented parallel to the substrate surface. A quasi-epitaxial optoelectronic device structure comprises a substrate, the first layer deposited on said substrate, and the second layer deposited above the first layer. Said first layer represents a planar crystalline film of an organic aromatic semiconductor compound and is selected from a group of organic compounds including polyacenes, porphyrins, and their derivatives. Said second layer also represents a planar crystalline film of an organic aromatic semiconductor, whose chemical composition (generally, different from that of the first layer) is also selected from a group of organic compounds including polyacenes, prophyrins, and their derivatives. The first and second layers have crystalline structures, which are in a certain relationship with each other. In particular, the first and second layers can be independently selected from a group including 3,4,9, 10-perylenetetracarboxylic dianhydride (PTCDA), 3,4,7,8- naphthalenetetracarboxylic dianhydride (NTCDA), copper phthalocyanine, 3,4,9,10- perylenetetracarboxylic acid bis-benzimidazole, and -oxadiazole derivatives. Organic
optoelectronic devices have been grown by organic molecular beam deposition. The organic substances have been deposited as ultrathin layers only 10 Angstrom (A) thick using organic molecular beam deposition methods. PTCDA and NTCDA have been identified as excellent materials for the manufacture of organic optoelectronic IC devices, but any planar organic aromatic
semiconductor capable of readily forming a crystalline structure may be used. The preferred method of the prior art employs a chamber, comprising an inorganic substrate made of an appropriate material for making electrical contact to the organic structures, and sources of PTCDA and NTCDA. The chamber is maintained at a pressure generally below 10'6 Torr. The substrate is spaced from the source of film materials by a minimum distance of 10 cm. During deposition, the substrate is kept at a temperature below 150K, while the PTCDA and NTCDA sources are alternatively heated.
Despite all the advantages of said quasi-epitaxial growth method (see US Patent Nos. 6,451 ,415 and 5,315,129), it is not free of drawbacks. According to said known method, a constant temperature regime and vacuum level have to be maintained in the chamber throughout the epitaxial growth process. Any breakdowns in the temperature and vacuum regime lead to the appearance of defects in the growing layer, whereby both crystallographic parameters and the orientation of molecular layer exhibit changes. This sensitivity of the process is a disadvantage of said known method, which is especially significant in the case of deposition of relatively thick (1 to 10 μm) epitaxial layers.
Another disadvantage of said method is the need in sophisticated technological equipment. The reactor chamber must hold an ultrahigh vacuum (down to 10"6 - 10~10 Torr) and must withstand considerable temperature gradients between closely spaced zones. The equipment must include the means of heating sources and cooling substrates, a complicated pumping stage, and facilities for gas admission, temperature and pressure monitoring, and technological process control. The high vacuum requirements make the process expensive and limit the substrate dimensions.
One more disadvantage of said known method is limitation on the substrate materials: only substances retaining their physical, mechanical, optical, and other properties under the conditions of large pressure differences, high vacuum, and considerable temperature gradients can be employed.
The production of a two-dimensional bimolecular surface structure using weak noncovalent interactions has been demonstrated and characterized by scanning tunneling microscopy (see L. Scudiero et a/., "A Self-Organized Two-Dimensional Bimolecular Structure", J. Phys. Chem. B, 107, 2903-2909 (2003)). This work follows closely the ideas of three-dimensional crystal engineering and applies the concepts of supramolecular reactants (synthons) to molecular systems constrained to two dimensions by physical adsorption (physisorption) on a conducting surface. A well-ordered planar structure that self-assembles through the influence of fluorine-phenyl interactions has been demonstrated. This study provides an example of the systematic design of self-organized layers. Fully fluorinated cobalt phthalocyanine (F16CoPc) films thermally deposited onto gold were characterized by reflection-absorption infrared spectroscopy (RAIRS), X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS), and scanning tunnelling microscopy (STM). The UPS spectra of thin films of CoPc, F16CoPc, and nickel tetraphenylporphyrin (NiTPP) on gold were measured and their relative surface charges were compared. STM images of single molecular layers of F16CoPc, NiTPP, and NiTPP-FI 6CoPc and NiTPP-CoPc mixtures were obtained. It was found that, while NiTPP-FI 6CoPc spontaneously formed a well-ordered 1 :1 structure, NiTPP-CoPc formed a two-dimensional solid solution.
Ultrathin films prepared from inorganic and organic materials are of increasing interest as hybrid nanocomposite materials. The formation of nanostructured ultrathin films of montmorillonite clay (MONT) and a bicationic sexithiophene derivative (6TN) was investigated using the layer-by- layer self-assembly approach (see X. Fan, J. Locklin, J. Ho Youk, et al., Nanostructured
Sexithiophene/Clay Hybrid Mutilayers: A Comparative Structural and Morphological
Characterization, Chem. Mater., 14, 2184-2191 (2002)). The main goal was to investigate the structure and layer ordering in those films suitable for future applications in organic semiconductor devices. The structure and morphology of 6TN/MONT multilayer films prepared from pure water and 0.1 M NaCI systems have been compared. The 6TN amphiphile showed unique aggregation behaviour both in solution and on the surface, which changed in the presence of salts and THF as a cosolvent. On clay surfaces, the 6TN aggregates deposited from saline solutions exhibited more uniform size distribution and surface coverage as compared to those obtained from a pure water system. This was verified by UV-VIS spectra, X-ray diffraction (XRD), and atomic force microscopy (AFM). The idea of incorporating more 6TN species adsorbed on the surface so as to obtain a smoother surface morphology can be of great significance in semiconductor device fabrication.
The available literature presents no examples of the films with the vertical orientation of stacks prepared by a low-cost and effective way of solution application on the substrate. The films with the horizontal orientation of stacks are usually obtained using the lyotropic liquid crystal (LLC) solutions of sulfoderivatives (see: U.S. Patent Nos. 5,739,296 and 6,049,428 and the following publications: P. Lazarev et al., X-ray Diffraction by Large Area Organic Crystalline Nanofilms, Molecular Materials, 14(4), 303-311 (2001), and Y. Bobrov, Spectral Properties of Thin Crystal Film Polarizers, Molecular Materials, 14(3), 191-203 (2001 )).
On the other hand, it is known from the literature that some molecules are capable of forming regularly arranged planar fragments (supramolecules) on a substrate surface, being deposited from solutions in water and various organic solvents, and that hydrogen bonding (H- bonding) is the driving force for the formation of such planar supramolecules. This phenomenon was observed for heterocyclic amines, amides, and carboxylic acids. The type of the obtained monolayer structure depends on the molecular structure, the solvent, and the surface activity. The layer structures of various types - stable and unstable, dense and loose - can be obtained using different molecular structures and conditions.
There are many novel adsorbate-substrate systems that are known to exhibit a high degree of large-scale ordering. The method of scanning tunnelling microscopy (STM) has proved to be capable of studying the electronic properties of such systems and their structures on a submolecular resolution level. It was established that, in some systems, H-bonding is the predominant interaction between molecules and governs the molecular self-assembly process.
Selective noncovalent interactions have been widely used in solution chemistry to direct the assembly of molecules into nanometer-sized functional structures such as capsules, switches and prototype nanomachines. The concepts of supramolecular organization have also been applied to two-dimensional (2D) assemblies on surfaces stabilized by means of H-bonding, dipolar coupling, or metal coordination. Another approach to controlling surface structures uses adsorbed molecular monolayers to create preferential binding sites that accommodate individual target molecules. James A. Theobald et al. (Controlling Molecular Deposition and Layer Structure with
Supramolecular Surface Assemblies, Nature, 424, 1029-1031 (2003)) combined these approaches by using H-bonding to guide the assembly of two types of molecules into a 2D open honeycomb network. This network controls and templates new surface phases formed by subsequently deposited fullerene molecules. It was found that the open network acts as a 2D array of large pores of sufficient capacity to accommodate several large guest molecules and serves as a template for the formation of an ordered fullerene layer.
Self-assembly of a 2D loosely packed H-bonded network of trimesic acid (TMA) at the liquid-solid interface has been observed using STM (see Lackinger et al., Langmuir, 21 , 4984- 4988 (2005)). Two crystallographically different 2D phases of TMA were identified and selected by varying the solvent. In this paper, some models of various crystallographic structures with the corresponding H-bonding modes were introduced: (a) chickenwire structure, a = b = 1.7 nm, angle A = 60°, area = 2.5 nm2, 2 molecules per unit cell; (b) flower structure, a = b = 2.5 nm, angle A = 60°, area = 5.4 nm2, 6 molecules per unit cell; (c) "super flower" structure, representing more densely packed 2D TMA polymorph based entirely on 3-fold H-bonding. It was suggested that the denser "flower" structure (b) is likely to be the most thermodynamically stable of the two observed monolayer polymorphs. Studies of these adsorbed polymorph structures for TMA dissolved in a series of acid solvents [CH3(CH2)nCOOH with n = 2-7] showed that the flower structure was favored for the shorter-chain solvents, which also corresponded to those in which TMA had the maximum solubility. It should be noted that an even more densely packed TMA structure could theoretically be formed with a purely 3-fold H-bonded structure ("super flower" structure), but this TMA form was not observed. A possible explanation for this behaviour is the stabilization, in short- chain solvents, of a TMA trimer [(TMA)3] solution phase nucleation species, which is a likely precursor to the flower form of TMA; however, an explanation based on differential solvent stabilization of the surface monolayer of flower and chickenwire structures cannot be ruled out.
The crystal packing of some fluorinated azobenzenecarboxylic acids was studied by R.
Centore and A. Tuzi (Crystal Eng., 6, 87-97 (2003)). The X-ray crystal structures of
C6H5COOH1C6F5COOH (1), C6H5CONH21C6F5CONH2 (2), and C6H5CONH21C6F5COOH (3) were analyzed in order to elucidate the role of Ph-PhF synthon in directing self-assembly and H-bonding in these cocrystals (see Reddy et ah, Crystal Growth & Design, 4, 89-94 (2004)). The strong H- bond donor acidity of C6F5COOH and C6F5CONH2 together with mixed stacks of phenyl and perfluorophenyl rings steer acid-acid and amide-amide H-bonding in cocrystals 1 and 2. The acid- amide H-bonding is sufficiently strengthened by donor acidity and acceptor basicity in 3, so that the role of the Ph-PhF synthon is weaker because the aromatic rings stack with lateral offset. The complex C6H5COOH1C6F5CONH2 (4) could not be obtained under similar crystallization conditions. The crystal structure of C6F5CONH2 was also determined to compare the molecular conformation and H-bonding with motifs in the cocrystals.
It has been found that 4-hydroxybenzoic acid (1) crystallizes into three crystalline forms: (i) monoclinic from a DMSO solution (1A), (ii) triclinic from a solution in 1 :1 DMSO/hot ethyl acetate (1 B), and (iii) triclinic from a pyridine solution (1 C) (see Jayaraman et al., Crystal Growth & Design, 4, 1403-1409 (2004)). The formation of these pseudopolymorphs and the structural similarity of their packing motifs can be rationalized in terms of few-multipoint solute-solvent interactions. In all three structures, the crystallographic aspects pertaining to the influence of solvent molecules
towards the formation of H-bonded network structures are described. In addition to the strong H- bonds, intermolecular C-H--O, C-H-π, and π-π interactions were found to stabilize the crystal structures.
A series of 4,4-dipyridyl (4,4-DP) derivatives have been prepared and studied using single- crystal X-ray diffraction techniques (see D. E. Lynch et ah, Crystal Eng., 2, 137-144 (1999)). The structures had increasing degree of complexity in the overall H-bonded network. The structure of 1 comprises polymeric H-bonded chains of associated 4,4-DP and ICA molecules that propagate through complementary sites on the ICA molecules. The structure of 2 consisted of two parallel polymeric H-bonded chains, each involving associated 4,4-DP and 3-ABA molecules cross-linked through complementary 3-ABA sites. The structure of 3 was an extensive 3-dimensional H-bonded network involving all H-bonded donor and acceptor sites on the constituent molecules. In each case, the positions and directions of the N-H groups were important in determining the final lattice network.
Conventionally, crystalline silicon solar cells have been well known and widely utilized as devices for directly converting light into electric energy in the field of weak power consumption and as independent power sources. Crystalline silicon solar cells are made predominantly of single- crystalline or amorphous silicon. The production of silicon single crystals and amorphous silicon, however, requires enormous amounts of energy and, in order to recover energy consumed for manufacturing silicon-based cells, electric power generation needs to be carried out continuously for nearly a ten-year long period. Under these circumstances, solar cells utilizing dye sensitizers have received much attention (see B. O'Regan and M. Gratzel, A Low-Cost, High-Efficiency Solar Cell Based on Dye-Sensitized Colloidal TiO2 Film, Nature, 353, 737 - 740 (1991); M. Gratzel, Perspective for Dye-Sensitized Nanocrystalline Solar Cell, Prog. Photovolt. Res. Appl., 8, 171 - 185 (2000); M. Gratzel, Photoelectrochemical Cell, Nature, 414, 338 - 344 (2001)).
The present invention will now be described solely by way of examples and with reference to the accompanying drawings in which:
Figure 1 shows the cross section of a prior art dye-sensitized solar cell; and
Figure 2 shows the cross section of a solar cell according to one embodiment of the present invention.
Figure 3 shows the cross section of a solar cell according to another embodiment of the present invention.
Dye-sensitized solar cells differ from the conventional semiconductor devices in that they separate the functions of light absorption and charge carrier transport. In the case of n-type semiconductor materials such as TiO2, current is generated when the absorption of photons by dye molecules leads to the injection of electrons into the conduction band of the semiconductor (see Figure 1). In order to close the circuit, the dye must be regenerated at the expense of the electron transfer from redox species in solution, which are subsequently reduced at the counter electrode. In the simplest variant, a dye-sensitized solar cell consists of two transparent substrates 1 and 2 (e.g., glass plates) with transparent conducting layers 3 and 4 (e.g., tin oxide (SnO2) films). Said substrates and conducting layers form the first electrode (photoelectrode) 5 and the second
electrode (counter electrode) 6. One side of the photoelectrode is coated with a porous layer 7 of a wide-bandgap semiconductor, usually TiO2, which is sensitized for visible light by an adsorbed dye film. The semiconductor layer 7 is deposited onto conducting layer 3 from a colloidal solution and has a large specific surface. This semiconductor layer, typically with a thickness of 10 μm and a porosity of about 50%, has a surface area (available for dye chemisorption) more than a thousand times that of a flat layer of the same size. Short-term sintering at 45O0C leads to the formation of electrical contacts between particles in the semiconductor layer, which are depicted by open circles 8 in Figure 1. The dimensions of particles and pores making up the porous semiconductor layer 7 are determined by the size of particles in the colloidal solution. The internal surface area of the porous semiconductor layer 7 depends on the particle size and the layer thickness. These parameters should be optimized so as to provide for the effective light collection, while maintaining the pore size large enough to allow the redox electrolyte 9 to diffuse easily. Alternative wide- bandgap oxides such as ZnO and Nb2O5 can be used as well. The space between the two electrodes is filled with electrolyte 9, which contains redox couples such as iodide (Q/triiodide (I3 "). The dye molecules 10, which are depicted in Figure 1 by dark contours surrounding the white circles, are adsorbed on TiO2 particles. Upon the absorption of incident photons 11 , the dye molecules inject electrons into TiO2 particles on which they are adsorbed. The electrons are transported via TiO2 particles (which are sintered together at their contact points) until they reach the conducting layer 3. The oxidized dye species resulting from the photoinduced electron transfer are reduced by iodide (l~) species in the electrolyte that fills pores in the semiconductor layer 7. The remaining triiodide (I3 ") species diffuse to the counter electrode, where they are converted back to iodide (f) by electrons arriving via an external chain with load 12.
Dye-sensitized solar cells are expected to serve as solar cells for the next generation because of simplicity and efficiency of fabrication technology, reduced material costs, and the like. One approach to manufacturing dye-sensitized solar cells has been described in J. Am Ceram. Soc, 80(12), 3157-3171 (1997), according to which a dye sensitizer (such as a transition metal complex) is adsorbed on the surface of a titanium oxide layer representing a porous
semiconductor. In this technology, a dye-sensitized solar cell is manufactured as follows: a transparent substrate, on which a transparent conducting layer and a semiconductor layer of titanium oxide are formed, is immersed in a solution containing a dye sensitizer, so that the dye sensitizer is adsorbed on the semiconductor surface. Then, an electrolyte solution containing redox species is applied dropwise onto the semiconductor layer. Finally, a counter electrode is stacked above the resulting semiconductor layer. When the solar cell thus obtained is irradiated with visible light from the side of the semiconductor layer, the dye sensitizer supported on the semiconductor layer absorbs the light so that electrons in the dye sensitizer molecules are excited. As a result of this excitation, electrons are injected into the semiconductor layer, transferred to the transparent electrode, and transported via the external electric chain to the counter electrode. Then, electrons enter the electrolyte layer and are carried, together with holes or ions, through the electrolyte layer and returned to the semiconductor layer. Electric energy is generated by repetition of this process.
However, in order to obtain dye-sensitized solar cells applicable in practice, it is necessary to provide for a further increase in the photovoltaic conversion efficiency. For this purpose, solar cells have to be optimized so as to increase the generated current (short-circuit current), the open-
circuit voltage, and the durability. In order to increase the open-circuit voltage, it is necessary to decrease a reverse current passing from the semiconductor layer to the dye sensitizer and/or to the electrolyte layer.
The dyes used as sensitizers in prior art possessed high resistivities. Accordingly, these dyes were used as thin monolayers adsorbed on the surface of the semiconductor layer. However, a thin dye layer does not provide for the absorption of all or a substantial part of the incident light. Therefore, it is necessary to increase the thickness of the dye layer so as to increase the absorbed light fraction. Unfortunately, thick sensitizer layers lead to a considerable increase in the serial resistance of a solar cell, which, in turn, results in a decrease in the photovoltaic conversion efficiency of the cell.
One possible method of decreasing said resistance and increasing the absorbed fraction of incident light is to provide a considerable increase in the specific surface area of the semiconductor layer. Accordingly, porous semiconductor layers have been used in prior art. A porous
semiconductor layer, typically having a thickness of 10 μm and a porosity of about 50%, has a surface area (available for dye adsorption) more than a thousand times that of a flat, simple nonporous electrode of the same size. Then, even if the dye is adsorbed as a monomolecular layer, a sufficient amount of it can be retained on a given electrode area so as to provide the absorption of almost all of the incident light.
The charge transport in porous semiconductor layers known in prior art can be described in terms of a diffusion model for random displacements of charge carriers in disordered solids. For this reason, the mobility of electrons in these layers is much lower than in the same ordered bulk materials. In addition, a decrease in the electron mobility leads to an increase in the resistivity of the material and, hence, in the serial resistance of the photovoltaic device. This implies an increase in the ohmic losses and an additional decrease in the photovoltaic conversion efficiency.
Another drawback of the dye-sensitised solar cell known in prior art is that the dye may completely block pores in the semiconductor layer, thus hindering the penetration of electrolyte into these pores.
where Het is a planar conjugated heterocyclic molecular system,
X is an acid group,
m is 1 , 2, 3, 4, 5, 6, 7 or 8,
Y is an amide of acid group,
n is 1 , 2, 3 or 4,
R is a substituent selected from the list comprising -CH3, -C2H5, -NO2, -Cl, -Br, -F, -
CF3, -CN, -OH, -OCH3, -OC2H5, -OCOCH3, -OCN, -SCN, -NH2, -NHCOCH3, z is 0, 1 , 2, 3 or 4,
wherein said acid absorbs electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm, and aqueous solution of its water- soluble salt is capable of forming a photoelectric layer of rodlike supramolecules on a substrate.
According to one aspect, the present invention provides an organic solar cell comprising: a first electrode and a second electrode spaced from each other; an organic ionic-crystalline photoelectric layer situated between the first electrode and the second electrode and contacting with the first electrode; and an electrolyte which is situated between the organic ionic-crystalline photoelectric layer and the second electrode and impregnates the organic ionic-crystalline photoelectric layer.
The organic ionic-crystalline photoelectric layer is capable of absorbing electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm. This layer consists of rodlike supramolecules, which are comprised of the molecules of at least one organic compound of the general structural formula
where Het is a planar conjugated heterocyclic system; X is an acid group; m is 1 , 2, 3, 4, 5, 6, 7 or 8; Y is an acid amide group; n is 0, 1 , 2, 3 or 4; R is a substituent selected from the list including - CH3, -C2H5, -NO2, -Cl, -Br, -F, -CF3, -CN, -OH, OCH3, -OC2H5, -OCH3, -OCN, -SCN -NH2, - NHCOCH3, and -CONH2; z is 0, 1 ,2, 3 or 4, K is a counterion selected from the list comprising H+, NH+ 4, Na+, K+, Li+, Ba++, Ca++, Mg++, Sr++, Zn++; and p is the number of counterions providing neutral state of the molecule.
The present invention provides an organic solar cell based on a new organic ionic- crystalline photoelectric layer with a resistivity approximately equal to the resistivity of crystalline or amorphous silicon (see Figure 2 and Figure 3). Therefore, the disclosed solar cell may contain a thick photoelectric ionic-crystalline layer 13 having at least one thousand monolayers. The use of thick photosensitive layers considerably increases the fraction of absorbed incident light at an insignificant increase in the serial resistance of the cell. Thus, the disclosed organic solar cell employs the ionic-crystalline layer as an active photosensitive element. The organic ionic- crystalline photoelectric layer is situated between the first electrode 5 and the second electrode 6 and contacts with the first electrode and the electrolyte. The organic ionic-crystalline photoelectric layer 13 consists of rodlike supramolecules 14, which are oriented both predominantly
perpendicular (as shown in Figure 2) and predominantly parallel (as shown in Figure 3) to the surface of the first electrode. The rodlike supramolecules are good conductors for charge carriers (electrons or holes). The organic ionic-crystalline photoelectric layer is impregnated with electrolyte 9 containing redox couples. This electrolyte provides electric contact with the second electrode 6.
The disclosed organic solar cell operates as follows. The thick organic ionic-crystalline photoelectric layer, which is made of disclosed organic dye compound, is formed on the surface of the first electrode. Photoexcitation of the dye results in the injection and passage of electrons or holes along the rodlike supramolecules and their subsequent injection into the first electrode. The initial state of the dye is subsequently restored by electron (or hole) donation from the electrolyte that permeates into the organic ionic-crystalline photoelectric layer. The electrolyte is usually an organic solvent containing a redox system such as the iodide/triiodide couple. Regeneration of the
organic dye compound by iodide eliminates recapture of the conduction band electrons by the oxidized dye. The iodide species are regenerated, in turn, by the reduction of triiodide at the second electrode, the circuit being closed due to electron migration via an external chain with load.
In one embodiment of the organic solar cell, the organic ionic-crystalline photoelectric layer is made of a conducting organic compound. In another embodiment of the organic solar cell, at least one of said electrodes is transparent. In one variant of the disclosed solar cell, at least one acid group is carboxy group (COOH). In another variant of the disclosed solar cell, at least one acid group is sulfonic group (SO3H). In still another variant of the disclosed solar cell, at least one acid amide group is an amide of carboxylic acid (CONH2). In a possible variant of the disclosed solar cell, at least one acid amide group is an amide of sulfonic acid (SO2NH2). In a possible embodiment of the disclosed solar cell, the organic compound comprises carboxylic group COOH and group of carboxylic acid amide CONH2 and the rodlike supramolecules are oriented predominantly perpendicularly to the surface of the first electrode. In one variant of the disclosed solar cell, the organic compound comprises sulfonic group SO3H and the rodlike supramolecules are oriented predominantly parallel to the surface of the first electrode.
In one possible variant of the disclosed organic solar cell, the planar conjugated heterocyclic system is a vat dye comprising anthraquinone fragments. Table 1 shows some examples of vat dyes comprising anthraquinone fragments of the general structural formula corresponding to structures 1-11.
Table 1. Examples of vat dyes comprising anthraquinone fragments
In one variant of the disclosed invention, the planar conjugated heterocyclic system is a vat dye comprising perylene fragments. Table 2 shows some examples of vat dyes comprising perylene fragments of the general structural formula corresponding to structures 12-41
Table 2. Examples of vat dyes comprising perylene fragments
In another variant of the disclosed invention, the planar conjugated heterocyclic system is a vat dye comprising anthanthrone fragments. Table 3 shows some examples of vat dyes comprising such anthanthrone fragments of the general structural formula corresponding to structures 42 and 43.
Table 3. Examples of vat dyes comprising anthanthrone fragments
(42)
In another variant of the disclosed invention, the planar conjugated heterocyclic system is a dye comprising quinoxaline fragments. Table 4 shows some examples of dyes comprising such quinoxaline fragments of the general structural formula corresponding to structures 44-55.
Table 4. Examples of dyes comprising planar conjugated quinoxaline fragments
In still another variant of the disclosed invention, the planar conjugated heterocyclic system comprises a dioxazine fragment. Table 5 shows some examples of dyes comprising such dioxazine fragments of the general structural formula corresponding to structures 56-57.
Table 5. Examples of dyes comprising planar conjugated dioxazine fragments
In still another variant of the disclosed invention, the planar conjugated heterocyclic system comprises a quinacridone fragment. Table 6 shows some examples of dyes comprising such quinacridone fragments of the general structural formula corresponding to structures 58-59. Table 6. Examples of dyes comprising planar conjugated quinacridone fragments
In still another variant of the disclosed invention, the planar conjugated heterocyclic system comprises naphthoylenebenzimidazole fragments. Table 7 shows some examples of such systems of the general structural formula corresponding to structures 60-61.
Table 7. Examples of dyes comprising planar conjugated
naphthoylenebenzimidazole fragments
In still another variant of the disclosed invention, the planar conjugated heterocyclic system comprises phthalocyanine of the general structural formula 62:
where M is Cu, Zn, Fe, Co, Mn, Al, or a vacancy. In one variant of the disclosed organic solar cell, the organic ionic-crystalline photoelectric layer is substantially insoluble in the electrolyte. In some embodiments of the disclosed organic solar cell, the first electrode comprises a transparent substrate and a conducting film that is formed on the surface of the transparent substrate and is in contact with the organic ionic-crystalline photoelectric layer. In a possible variant of the disclosed organic solar cell, the transparent substrate is a polymer film. In another embodiment of the organic solar cell, said polymer film is made of a material selected from the group comprising poly(ethylene terephthalate) (PET), poly(ethylene naphthalate) (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAC). In one possible variant of the organic solar cell, said conducting film is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga2O3, ZnO-AI2O3, and SnO2-Sb2O3. The second electrode transfers electrons arriving from the external chain back to the redox electrolyte. This electrode also carries the photocurrent over the width of each solar cell. Hence, the second electrode must be well conducting and possessing low overvoltage for the reduction of redox couples. Accordingly, in another variant of the organic solar cell, the second electrode comprises a transparent substrate and a two-layer conducting film, with the first and second conducting layers formed on the inner surface of the substrate facing electrolyte. In still another variant of the organic solar cell, the transparent substrate of the second electrode is a polymer film. In yet another variant of the organic solar cell, said polymer film is made of a material selected from the group comprising polyethylene terephthalate (PET), polyethylene naphthalate) (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAC). In one variant of the disclosed organic solar cell, the first conducting layer of the two-layer conducting film is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga2O3, ZnO-AI2O3 and SnO2-
Sb2O3. In another possible variant of the organic solar cell, the second conducting layer of the two- layer conducting film is made of a precious metal. In another variant of the disclosed organic solar cell, the second conducting layer is made of a porous material. Any convenient conducting material can be used in the second conducting layer. The use of a porous conducting layer substantially increases conversion efficiency of a solar cell due to extension of the effective interaction area of said porous conducting layer with the electrolyte.
In another embodiment of the disclosed invention, the organic solar cell further comprises an anti-reflection film formed on the surface of the first electrode opposite to the surface facing the second electrode. In still another variant of the disclosed invention, the organic solar cell further comprises an ultraviolet absorbing film formed on the surface of the first electrode opposite to the surface facing the second electrode. In a possible variant of the disclosed organic solar cell, the ultraviolet absorbing film is made of a polymer. In a possible embodiment of the disclosed organic solar cell, the organic ionic-crystalline photoelectric layer comprises light-scattering particles. In another embodiment of the organic solar cell, the surface of the second electrode facing the first electrode is further coated with a thin layer of an electrocatalyst facing the electrolyte. In one embodiment of the organic solar cell, the electrocatalyst is platinum. Platinum is the preferred material for the use as electro-catalyst, since it is an excellent catalyst for triiodide reduction.
The liquid electrolyte leakage and the possible corrosion of the platinum second electrode as a result of its interaction with the triiodide/iodide couple may be critical factors limiting the long- term performance of a dye-sensitized solar cell, especially at elevated temperatures. For this reason, in some embodiments of the disclosed invention, the liquid electrolyte is replaced by a polymer gel electrolyte. In one possible variant of the organic solar cell, said electrolyte is a gel electrolyte containing a redox system. In another variant of the organic solar cell, said gel electrolyte is made of 3-methoxypropionitrile (MPN)-based liquid electrolyte solidified by poly(vinylidene fluoride)-hexafluoropropylene (PVDF-HFP) copolymer. In still another variant of the solar cell, said electrolyte is a liquid electrolyte selected from the group of electrolytes comprising the redox couple of cerium(lll) sulfate and cerium(IV), redox couple of iodide (Q and triiodide (I3 "), redox couple of sodium bromide and bromine, and redox couple of lithium iodide and iodine in solution in one or more solvents selected from the group including water, N-methyloxazolidinone, nitromethane, propylene carbonate, ethylene carbonate, butyrolactone, dimethyl imidazolidine, N- methylpyrrolidine, and mixtures of said solvents. In one embodiment of the disclosed invention, the organic solar cell further comprises an insulating porous layer situated between the organic ionic- crystalline photoelectric layer and the second electrode, wherein the electrolyte fills the pores of said insulating porous layer. Said insulating porous layer is required to prevent short circuit between the organic ionic-crystalline photoelectric layer and the second electrode. The insulating layer may, at the same time, act as a diffuse reflector that reflects light that has not yet been absorbed back into the organic ionic-crystalline photoelectric layer.
The present invention provides an inexpensive and relatively simple fabrication technology of organic ionic-crystalline photoelectric layers.
In order that the invention may be more readily understood, reference is made to the following examples, which are intended to be illustrative of the invention, but are not intended to be limiting in scope.
Example 1
This example describes the preparation of an organic ionic-crystalline photoelectric layer from a solution of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid (carboxylic acid of base structure 48 in Table 4)
A. Synthesis of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid
Synthesis is performed via condensation of 2,5-dihydroxy-p-benzoquinone with o- phenylenediamine and 3,4-diaminobenzoic acid. A mixture of 1.40 g (0.01 mole) of 2,5-dihydroxy-p- benzoquinone and 1.08 g (0.01 mole) of o-phenylenediamine in 50 ml of acetic acid is stirred on boiling for 30 min. Then 1.52 g (0.01 mole) of 3,4-diaminobenzoic acid is added to the boiling mixture during 16 hours. The precipitate of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid is separated by filtration and washed with acetic acid. The isolated product is purified by crystallization from a mixture of acetic acid and DMF. The final product yield is 2.54 g.
B. Preparation of a photoelectric layer
A solution of 1.0 g of 5a,6,13,13a-tetrahydroquinoxalino[2,3-b]phenazine-2 carboxylic acid in 35.0 g of deionized water is stirred for 5 min at a temperature of 2O0C. Then, 1.3 ml of a 10% aqueous ammonia solution is added and the mixture is stirred until complete dissolution. An appropriate substrate is sequentially washed with surfactants and with deionized water and then dried with airflow from a compressor. The pretreated substrate is coated with the above solution using Mayer rod #2.5 moved at a linear rate of 15 mm/s, a temperature of 200C, and a relative humidity of 65%.
Finally, the film is dried at the same humidity and temperature. The duration, humidity, and temperature of drying are selected so as to ensure 95% removal of solvent from the solution while retaining the porous structure of the dye-sensitizer layer after termination of the drying. The obtained film is characterized by measuring the specific resistance in the direction of rodlike supramolecules, which are approximately perpendicular to the substrate surface. The measured value of said specific resistance is in the range from 190 to 200 ohm-cm.
Example 2
The example describes the preparation of an organic ionic-crystalline photoelectric layer, which is similar to the procedure described in Example 1 B. In contrast to Example 1 , the drying stage is replaced by an annealing. A solution of 1.0 g of 5a,6,13,13a-tetrahydroquinoxalino[2,3- b]phenazine-2 carboxylic acid in 35.0 g of deionized water is stirred for 5 min at a temperature of 200C. Then, 1.3 ml of a 10% aqueous ammonia solution is added and the mixture is stirred until complete dissolution. An appropriate substrate is sequentially washed with surfactants and with
deionized water and then dried with airflow from a compressor. The pretreated substrate is coated with the above solution using Mayer rod #2.5 moved at a linear rate of 15 mm/s, a temperature of 200C, and a relative humidity of 65%.
Finally, the film is annealed at a temperature up to 370 0C. The duration, humidity, and temperature of annealing are selected so as to ensure 95% removal of carboxylic groups from the organic ionic-crystalline photoelectric layer, while retaining the porous structure after termination of the annealing. The obtained film is characterized by measuring the specific resistance in the direction of rodlike supramolecules, which are approximately perpendicular to the substrate surface. The measured value of said specific resistance is in the range from 190 to 200 ohm-cm.
Claims
where Het is a planar conjugated heterocyclic molecular system, X is an acid group,
m is 1, 2, 3, 4, 5, 6, 7 or 8,
Y is an amide of acid group,
n is 1 , 2, 3 or 4,
R is a substituent selected from the list comprising -CH3, -C2H5, -NO2, -Cl, -Br, -F, - CF3, -CN, -OH, -OCH3, -OC2H5, -OCOCH3, -OCN, -SCN, -NH2, -NHCOCH3, z is 0, 1 , 2, 3 or 4,
wherein said acid absorbs electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm, and
aqueous solution of its water-soluble salt is capable of forming a photoelectric layer of rodlike supramolecules on a substrate.
2. The organic acid according to Claim 1 , wherein at least one acid group is carboxylic group
COOH.
3. The organic acid according to Claim 1 , wherein at least one acid group is sulfonic group
SO3H.
4. The organic acid according to any of Claims 1 to 3, wherein at least one amide group is an amide of carboxylic acid CONH2.
5. The organic acid according to any of Claims 1 to 3, wherein at least one amide group is an amide of sulfonic acid SO2NH2.
6. An organic solar cell comprising:
a first electrode and a second electrode spaced from each other,
an organic ionic-crystalline photoelectric layer located between the first electrode and the second electrode and contacting with the first electrode, and
an electrolyte located between the organic ionic-crystalline photoelectric layer and the second electrode and impregnating the organic ionic-crystalline photoelectric layer, wherein the organic ionic-crystalline photoelectric layer absorbs electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm and consists of rodlike supramolecules, which comprise at least one organic compound of the general structural formula Il
X is an acid group,
m is 1 , 2, 3, 4, 5, 6, 7 or 8,
Y is an amide of acid group,
n is O, 1 , 2, 3 or 4,
R is a substituent selected from the list comprising -CH3, -C2H5, -NO2, -Ci, -Br, -F, - CF3, -CN, -OH, -OCH3, -OC2H5, -OCOCH3, -OCN, -SCN, -NH2, -NHCOCH3, z is O, 1 , 2, 3 or 4,
K is a counterion selected from the list comprising H+, NH+ 4, Na+, K+, Li+, Ba++, Ca++, Mg++, Sr++, Zn++, and
p is the number of counterions providing neutral state of the molecule.
7. The solar cell according to Claim 6, wherein the organic ionic-crystalline photoelectric layer is made of a conducting organic compound.
8. The solar cell according to any of Claims 6 to 7, wherein at least one of said electrodes is transparent.
9. The solar cell according to any of Claims 6 to 8, wherein at least one acid group is
carboxylic group COOH.
10. The solar cell according to any of Claims 6 to 8, wherein at least one acid group is sulfonic group SO3H.
11. The solar cell according to any of Claims 6 to 8, wherein at least one acid amide group is an amide of carboxylic acid CONH2.
12. The solar cell according to any of Claims 6 to 8, wherein at least one acid amide group is an amide of sulfonic acid SO2NH2.
13. The solar cell according to Claim 9, wherein at least one amide group is an amide of
carboxylic acid CONH2ι and the rodlike supramolecules are oriented predominantly perpendicular to the surface of the first electrode.
14. The solar cell according to Claim 10, wherein the rodlike supramolecules are oriented predominantly parallel to the surface of the first electrode.
15. The solar cell according to any of Claims 1 to 14, wherein said planar conjugated
heterocyclic molecular system is a vat dye comprising anthraquinone fragments.
16. The solar cell according to Claim 15, wherein said vat dye has the general structural formula from the group comprising structures 1-11 : )
17. The solar cell according to any of Claims 1 to 14, wherein said planar conjugated heterocyclic system is a vat dye comprising perylene fragments.
18. The solar cell according to Claim 17, wherein said vat dye has the general structural formula from the group comprising structures 12-41 :
19. The solar cell according to any of Claims 1 to 14, wherein said planar conjugated heterocyclic system is a vat dye comprising anthanthrone fragments.
21. The solar cell according to any of Claims 1 to 14, wherein said planar conjugated heterocyclic system comprises a quinoxaline fragment.
22. The solar cell according to Claim 21 , wherein said said planar conjugated heterocyclic system has the general structural formula from the group comprising structures 44-55:
23. The solar ceil according to any of Claims 1 to 14, wherein said planar conjugated
heterocyclic system comprises a dioxazine fragment.
24. The solar cell according to Claim 23, wherein said planar conjugated heterocyclic system has the general structural formula from the group comprising structures 56-57:
25. The solar cell according to any of Claims 1 to 13, wherein said planar conjugated
heterocyclic system comprises a quinacridone fragment.
26. The solar cell according to Claim 24, wherein said planar conjugated heterocyclic system has the general structural formula from the group comprising structures 58-59:
27. The solar cell according to any of Claims 1 to 14, wherein said planar conjugated heterocyclic system is naphthoylenebenzimidazole of the general structural formula from the group comprising structures 60-61 :
28. The solar cell according to any of Claims 1 to 14, wherein said planar conjugated
heterocyclic system comprises phthalocyanine of the general structural formula 62:
29. The solar cell according to any of Claims 1 to 28, wherein said organic ionic-crystalline photoelectric layer is substantially insoluble in the electrolyte.
30. The solar cell according to any of Claims 1 to 29, wherein the first electrode comprises a transparent substrate and a conducting film formed on the surface of the transparent substrate in contact with the organic ionic-crystalline photoelectric layer.
31. The solar cell according to Claim 30, wherein the transparent substrate is a polymer film.
32. The solar cell according to Claim 31, wherein the polymer film is made of a material selected from the group comprising polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAC).
33. The solar cell according to any of Claims 29 to 31 , wherein the conducting film is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide
(FTO), ZnO-Ga2O3, ZnO-AI2O3, and SnO2-Sb2O3.
34. The solar cell according to any of Claims 1 to 33, wherein the second electrode comprises a transparent substrate and a two-layer conducting film comprising the first and second conducting layers formed on the substrate surface facing the electrolyte.
35. The solar cell according to Claim 34, wherein the transparent substrate is a polymer film.
36. The solar cell according to Claim 35, wherein the polymer film is made of a material selected from the group comprising polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polypropylene (PP), polyimide (Pl), and triacetate cellulose (TAG).
37. The solar cell according to any of Claims 34 to 36, wherein the first conducting layer is made of a material selected from the group comprising indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga2O3, ZnO-AI2O3 and SnO2-Sb2O3.
38. The solar cell according to any of Claims 34 to 37, wherein the second conducting layer is made of a precious metal.
39. The solar cell according to any of Claims 35 to 38, wherein the second conducting layer is made of a porous material.
40. The solar cell according to any of Claims 1 to 39, further comprising an antireflection film formed on a surface of the first electrode facing to the surface facing the second electrode.
41. The solar cell according to any of Claims 1 to 39, further comprising an ultraviolet
absorbing film formed on the surface of the first electrode opposite to the surface facing the second electrode.
42. The solar cell according to Claim 41 , wherein the ultraviolet absorbing film made of a
polymer.
43. The solar cell according to any of Claims 1 to 42, wherein the organic ionic-crystalline photoelectric layer comprises light-scattering particles.
44. The solar cell according to any of Claims 1 to 43, wherein a surface of the second
electrode facing the first electrode is further coated with a thin layer of an electrocatalyst facing the electrolyte.
45. The solar cell according to Claim 44, wherein the electrocatalyst is platinum.
46. The solar cell according to any of Claims 1 to 45, wherein said electrolyte is a gel
electrolyte containing a redox couple.
47. The solar cell according to Claim 46, wherein said gel electrolyte is made of 3- methoxypropionitrile (MPN)-based liquid electrolyte solidified by poly(vinylidenefluoride- hexafluoropropylene (PVDF-HFP) copolymer.
48. The solar cell according to any of Claims 1 to 45, wherein the electrolyte is a liquid
electrolyte selected from the group of electrolytes comprising the a redox couple of cerium(lll) sulfate and cerium(IV), redox couple of iodide (Qand triiodide (I3 "), redox couple of sodium bromide and bromine, and redox couple of lithium iodide and iodine in solution in one or more solvents selected from the group including water, N- methyloxazolidinone, nitromethane, propylene carbonate, ethylene carbonate, butyrolactone, dimethyl imidazolidine, N-methylpyrrolidine, and a mixture of said solvents.
49. The solar cell according to any of Claims 1 to 48, further comprising an insulating porous layer situated between the organic ionic-crystalline photoelectric layer and the second electrode, wherein the electrolyte fills the pores of said insulating porous layer.
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GB0524799A GB2433071A (en) | 2005-12-05 | 2005-12-05 | Organic acids comprising planar conjugated heterocyclic molecular system, & photoelectric layer thereof with rodlike supramolecules for use in solar cell |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009083532A2 (en) * | 2007-12-28 | 2009-07-09 | Universite De La Mediterranee Aix-Marseille Ii | Novel method for the preparation of derivatives of dihydrotetraazapentacenes, products such as obtained, and uses thereof |
CN103556176A (en) * | 2013-10-30 | 2014-02-05 | 北京师范大学 | Electrocatalytic anode plate with high activity to nitrogen, sulfur and oxygen heterocyclic compounds and preparation process thereof |
US9120803B2 (en) | 2012-06-07 | 2015-09-01 | Signa S.A. De C.V. | Processes for the preparation of sodium 5,14-dihydrotetraazapentacene polysulfonate, and intermediates thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110783463A (en) * | 2018-07-30 | 2020-02-11 | 咸阳彩虹光电科技有限公司 | Active layer structure for solar cell and solar cell |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0887817A2 (en) * | 1997-06-23 | 1998-12-30 | SHARP Corporation | Photoelectric material using organic photosensitising dyes and manufacturing method thereof |
JP2000100484A (en) * | 1998-09-24 | 2000-04-07 | Fuji Xerox Co Ltd | Light semiconductor electrode, photoelectric conversion device and photoelectric conversion method |
US6150605A (en) * | 1998-09-22 | 2000-11-21 | Sharp Kabushiki Kaisha | Photovoltaic cell and manufacturing method thereof |
WO2002009197A1 (en) * | 2000-07-21 | 2002-01-31 | North Carolina State University | Solar cells incorporating light harvesting arrays |
US20030232153A1 (en) * | 2002-06-07 | 2003-12-18 | Nazarov Victor V. | Sulfoderivatives of indanthrone, lyotropic liquid crystal system and anisotropic film on their base |
EP1564827A1 (en) * | 2004-02-10 | 2005-08-17 | Université Libre De Bruxelles | Method for the manufacturing of multilayer mesogenic components |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2746441A1 (en) * | 1977-10-15 | 1979-04-19 | Cassella Ag | FIBER REACTIVE PHTHALOCYANINE AZO DYES |
JPH0291164A (en) * | 1988-09-29 | 1990-03-30 | Japan Carlit Co Ltd:The | Water-base ink which absorbs near-infrared ray |
ES2070937T3 (en) * | 1989-02-01 | 1995-06-16 | Sumitomo Chemical Co | DIOXAZINE COMPOUNDS ASYMMETRICAL REACTIVE WITH FIBERS AND THEIR USE AS REACTIVE DYES WITH FIBERS. |
AU4948393A (en) * | 1992-08-17 | 1994-03-15 | Sandoz Ltd. | Use of optical brighteners and phthalocyanines as photosensitizers |
DE19541985A1 (en) * | 1995-11-10 | 1997-05-15 | Dystar Textilfarben Gmbh & Co | Process for the production of triphendioxazine dyes amidated on both sides and new triphendioxazine dyes |
JP4236715B2 (en) * | 1997-09-29 | 2009-03-11 | シャープ株式会社 | Manufacturing method of semiconductor for photoelectric conversion material |
GB9928542D0 (en) * | 1999-12-02 | 2000-02-02 | Xenova Ltd | Pharmaceutical compounds |
CN1366519A (en) * | 2001-06-13 | 2002-08-28 | 陆鑑青 | Phenoxazine compounds, its pharmaceutical compositions and medical use |
GB0516800D0 (en) * | 2005-08-16 | 2005-09-21 | Kontrakt Technologies Ltd | Organic compound, semiconductor crystal film and method of producing thereof |
-
2005
- 2005-12-05 GB GB0524799A patent/GB2433071A/en not_active Withdrawn
-
2006
- 2006-12-05 WO PCT/GB2006/004547 patent/WO2007066098A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0887817A2 (en) * | 1997-06-23 | 1998-12-30 | SHARP Corporation | Photoelectric material using organic photosensitising dyes and manufacturing method thereof |
US6150605A (en) * | 1998-09-22 | 2000-11-21 | Sharp Kabushiki Kaisha | Photovoltaic cell and manufacturing method thereof |
JP2000100484A (en) * | 1998-09-24 | 2000-04-07 | Fuji Xerox Co Ltd | Light semiconductor electrode, photoelectric conversion device and photoelectric conversion method |
WO2002009197A1 (en) * | 2000-07-21 | 2002-01-31 | North Carolina State University | Solar cells incorporating light harvesting arrays |
US20030232153A1 (en) * | 2002-06-07 | 2003-12-18 | Nazarov Victor V. | Sulfoderivatives of indanthrone, lyotropic liquid crystal system and anisotropic film on their base |
EP1564827A1 (en) * | 2004-02-10 | 2005-08-17 | Université Libre De Bruxelles | Method for the manufacturing of multilayer mesogenic components |
Non-Patent Citations (4)
Title |
---|
ABE ET AL: "Novel photocathodic characteristics of organic bilayer composed of a phthalocyanine and a perylene derivative in a water phase containing a redox molecule", JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIAL ELECTROCHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 583, no. 2, 15 September 2005 (2005-09-15), pages 327 - 332, XP005051687, ISSN: 0022-0728 * |
G. TAMIZHAMI, J. P. DODELET, R. CÔTÉ, D. GRAVEL: "Photoelectrochemical Characterization of Thin Films of Perylenetetracarboxylic Acid Derivatives", CHEM. MATER., vol. 3, 1991, pages 1046 - 1053, XP002419868 * |
GUO M ET AL: "Photoelectrochemical studies of nanocrystalline TiO2 co-sensitized by novel cyanine dyes", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 88, no. 1, 15 June 2005 (2005-06-15), pages 23 - 35, XP004910570, ISSN: 0927-0248 * |
NOBUTSUGU MINAMI ET AL: "PHOTOELECTROCHEMICAL STUDY ON COPPER PHTHALOCYANINE FILMS", BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, VERLAG CHEMIE. WEINHEIM, DE, vol. 83, no. 5, May 1979 (1979-05-01), pages 476 - 481, XP000984102, ISSN: 0005-9021 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009083532A2 (en) * | 2007-12-28 | 2009-07-09 | Universite De La Mediterranee Aix-Marseille Ii | Novel method for the preparation of derivatives of dihydrotetraazapentacenes, products such as obtained, and uses thereof |
EP2078720A1 (en) | 2007-12-28 | 2009-07-15 | Université de la Méditerranée - Aix-Marseille II | Novel method for the preparation of derivatives of dihydrotetraazapentacenes, products such as obtained and uses thereof |
WO2009083532A3 (en) * | 2007-12-28 | 2009-11-12 | Universite De La Mediterranee Aix-Marseille Ii | Novel method for the preparation of derivatives of dihydrotetraazapentacenes, products such as obtained, and uses thereof |
US9120803B2 (en) | 2012-06-07 | 2015-09-01 | Signa S.A. De C.V. | Processes for the preparation of sodium 5,14-dihydrotetraazapentacene polysulfonate, and intermediates thereof |
CN103556176A (en) * | 2013-10-30 | 2014-02-05 | 北京师范大学 | Electrocatalytic anode plate with high activity to nitrogen, sulfur and oxygen heterocyclic compounds and preparation process thereof |
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GB2433071A (en) | 2007-06-13 |
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