WO2007078495A3 - Method of creating mems device cavities by a non-etching process - Google Patents

Method of creating mems device cavities by a non-etching process Download PDF

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Publication number
WO2007078495A3
WO2007078495A3 PCT/US2006/045925 US2006045925W WO2007078495A3 WO 2007078495 A3 WO2007078495 A3 WO 2007078495A3 US 2006045925 W US2006045925 W US 2006045925W WO 2007078495 A3 WO2007078495 A3 WO 2007078495A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
substrate
depositing
layer
over
Prior art date
Application number
PCT/US2006/045925
Other languages
French (fr)
Other versions
WO2007078495A2 (en
Inventor
Chun-Ming Wang
Jeffrey Lan
Teruo Sasagawa
Original Assignee
Qualcomm Inc
Chun-Ming Wang
Jeffrey Lan
Teruo Sasagawa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc, Chun-Ming Wang, Jeffrey Lan, Teruo Sasagawa filed Critical Qualcomm Inc
Publication of WO2007078495A2 publication Critical patent/WO2007078495A2/en
Publication of WO2007078495A3 publication Critical patent/WO2007078495A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining

Abstract

MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.
PCT/US2006/045925 2005-12-29 2006-11-30 Method of creating mems device cavities by a non-etching process WO2007078495A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/321,134 2005-12-29
US11/321,134 US7795061B2 (en) 2005-12-29 2005-12-29 Method of creating MEMS device cavities by a non-etching process

Publications (2)

Publication Number Publication Date
WO2007078495A2 WO2007078495A2 (en) 2007-07-12
WO2007078495A3 true WO2007078495A3 (en) 2007-12-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/045925 WO2007078495A2 (en) 2005-12-29 2006-11-30 Method of creating mems device cavities by a non-etching process

Country Status (3)

Country Link
US (2) US7795061B2 (en)
TW (1) TW200736154A (en)
WO (1) WO2007078495A2 (en)

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US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7417784B2 (en) * 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7527996B2 (en) * 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
DE102007022509B4 (en) 2007-05-14 2015-10-22 Robert Bosch Gmbh Micromechanical device with thin-film capping and manufacturing process
US7851239B2 (en) * 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
FI125817B (en) 2009-01-27 2016-02-29 Teknologian Tutkimuskeskus Vtt Oy Improved electronically controlled Fabry-Perot interferometer, an intermediate product, an electrode system and a method for producing an electronically controlled Fabry-Perot interferometer
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8547626B2 (en) * 2010-03-25 2013-10-01 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of shaping the same
KR20130100232A (en) 2010-04-09 2013-09-10 퀄컴 엠이엠에스 테크놀로지스, 인크. Mechanical layer of an electromechanical device and methods of forming the same
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
CN102295267B (en) * 2011-07-11 2014-04-23 清华大学 Manufacturing method of flexible MEMS (micro electro-mechanical system) anti-drag skin
US8796058B2 (en) 2011-11-02 2014-08-05 International Business Machines Corporation Semiconductor structure
EP3086360B1 (en) 2013-12-16 2020-06-24 Japan Advanced Institute of Science and Technology Method for producing semiconductor element using aliphatic polycarbonate
JP2017524542A (en) * 2014-05-28 2017-08-31 スリーエム イノベイティブ プロパティズ カンパニー MEMS device on flexible substrate
CN109298504B (en) * 2017-07-25 2021-01-29 安徽中科米微电子技术有限公司 Microcomputer electrooptical wavelength reference standard tool

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