WO2007120159A3 - Magnetic tunnel junction antifuse circuit comprising parallel connected reference magnetic tunnel junctions to provide an optimum reference resistance - Google Patents

Magnetic tunnel junction antifuse circuit comprising parallel connected reference magnetic tunnel junctions to provide an optimum reference resistance Download PDF

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Publication number
WO2007120159A3
WO2007120159A3 PCT/US2006/023123 US2006023123W WO2007120159A3 WO 2007120159 A3 WO2007120159 A3 WO 2007120159A3 US 2006023123 W US2006023123 W US 2006023123W WO 2007120159 A3 WO2007120159 A3 WO 2007120159A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic tunnel
antifuse
resistance
tunnel junction
mtj
Prior art date
Application number
PCT/US2006/023123
Other languages
French (fr)
Other versions
WO2007120159A2 (en
Inventor
Thomas W Andre
Chitra K Subramanian
Original Assignee
Freescale Semiconductor Inc
Thomas W Andre
Chitra K Subramanian
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Thomas W Andre, Chitra K Subramanian filed Critical Freescale Semiconductor Inc
Priority to JP2008518239A priority Critical patent/JP2008547222A/en
Priority to KR1020077030153A priority patent/KR101334819B1/en
Priority to CN2006800203673A priority patent/CN101553878B/en
Priority to EP06784865A priority patent/EP1897129A4/en
Publication of WO2007120159A2 publication Critical patent/WO2007120159A2/en
Publication of WO2007120159A3 publication Critical patent/WO2007120159A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Abstract

An antifuse circuit (10) provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse (18) has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier (12) provides the resistance state signal. A plurality of reference magnetic tunnel junctions (16) are coupled in parallel and to the sense amplifier (12), each (50, 52, 54) having a resistance within a range to provide a collective resistance that can be determined by the sense amplifier (12) to differ from each resistance state of the MTJ antifuse (18). A write circuit selectively provides a current sufficient to create the program voltage when the write circuit (20) is enabled to program the antifuse magnetic tunnel junction (18). Upon detecting a change in resistance in the MTJ antifuse (18), the write circuit (20) reduces current supplied to the antifuse (18). Multiple antifuses may be programmed concurrently. Gate oxide thicknesses of transistors are adjusted for optimal performance.
PCT/US2006/023123 2005-06-24 2006-06-13 Magnetic tunnel junction antifuse circuit comprising parallel connected reference magnetic tunnel junctions to provide an optimum reference resistance WO2007120159A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008518239A JP2008547222A (en) 2005-06-24 2006-06-13 Antifuse circuit
KR1020077030153A KR101334819B1 (en) 2005-06-24 2006-06-13 Antifuse circuit
CN2006800203673A CN101553878B (en) 2005-06-24 2006-06-13 Magnetic tunnel junction antifuse circuit including reference magnetic tunnel junctions coupled in parallel for providing optimal reference impedance
EP06784865A EP1897129A4 (en) 2005-06-24 2006-06-13 Antifuse circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/166,138 US7361561B2 (en) 2005-06-24 2005-06-24 Method of making a metal gate semiconductor device
US11/166,138 2005-06-24

Publications (2)

Publication Number Publication Date
WO2007120159A2 WO2007120159A2 (en) 2007-10-25
WO2007120159A3 true WO2007120159A3 (en) 2009-04-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/023123 WO2007120159A2 (en) 2005-06-24 2006-06-13 Magnetic tunnel junction antifuse circuit comprising parallel connected reference magnetic tunnel junctions to provide an optimum reference resistance

Country Status (3)

Country Link
US (1) US7361561B2 (en)
TW (1) TWI397129B (en)
WO (1) WO2007120159A2 (en)

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US8178902B2 (en) 2004-06-17 2012-05-15 Infineon Technologies Ag CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
US8399934B2 (en) 2004-12-20 2013-03-19 Infineon Technologies Ag Transistor device
US7344934B2 (en) 2004-12-06 2008-03-18 Infineon Technologies Ag CMOS transistor and method of manufacture thereof
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7160781B2 (en) 2005-03-21 2007-01-09 Infineon Technologies Ag Transistor device and methods of manufacture thereof
US7361538B2 (en) * 2005-04-14 2008-04-22 Infineon Technologies Ag Transistors and methods of manufacture thereof
US20070052037A1 (en) * 2005-09-02 2007-03-08 Hongfa Luan Semiconductor devices and methods of manufacture thereof
US8188551B2 (en) 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US20070052036A1 (en) * 2005-09-02 2007-03-08 Hongfa Luan Transistors and methods of manufacture thereof
US7495290B2 (en) * 2005-12-14 2009-02-24 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7510943B2 (en) * 2005-12-16 2009-03-31 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20080050898A1 (en) * 2006-08-23 2008-02-28 Hongfa Luan Semiconductor devices and methods of manufacture thereof
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US20080242108A1 (en) * 2007-04-02 2008-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating semiconductor device
CN101465162B (en) * 2007-12-20 2013-06-12 世界先进积体电路股份有限公司 Discriminating device and method for automatically burning/recording memory in sequence
JP5104373B2 (en) * 2008-02-14 2012-12-19 日本ゼオン株式会社 Production method of retardation plate
US8030718B2 (en) * 2008-09-12 2011-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Local charge and work function engineering on MOSFET
JP2011003664A (en) * 2009-06-17 2011-01-06 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
KR20110042614A (en) * 2009-10-19 2011-04-27 삼성전자주식회사 Semiconductor devices and methods of forming the same
US8896060B2 (en) 2012-06-01 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Trench power MOSFET
KR102333699B1 (en) 2014-12-19 2021-12-02 에스케이하이닉스 주식회사 Method for etching high―k metal gate stack
US10354880B2 (en) 2017-04-05 2019-07-16 International Business Machines Corporation Sidewall spacer with controlled geometry

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Also Published As

Publication number Publication date
TWI397129B (en) 2013-05-21
WO2007120159A2 (en) 2007-10-25
US7361561B2 (en) 2008-04-22
TW200707593A (en) 2007-02-16
US20060292773A1 (en) 2006-12-28

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