WO2007123696A3 - In-die optical metrology - Google Patents

In-die optical metrology Download PDF

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Publication number
WO2007123696A3
WO2007123696A3 PCT/US2007/007932 US2007007932W WO2007123696A3 WO 2007123696 A3 WO2007123696 A3 WO 2007123696A3 US 2007007932 W US2007007932 W US 2007007932W WO 2007123696 A3 WO2007123696 A3 WO 2007123696A3
Authority
WO
WIPO (PCT)
Prior art keywords
features
determined
optical metrology
die
test
Prior art date
Application number
PCT/US2007/007932
Other languages
French (fr)
Other versions
WO2007123696A2 (en
Inventor
Shifang Li
Junwei Bao
Vi Vuong
Original Assignee
Tokyo Electron Ltd
Shifang Li
Junwei Bao
Vi Vuong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Shifang Li, Junwei Bao, Vi Vuong filed Critical Tokyo Electron Ltd
Publication of WO2007123696A2 publication Critical patent/WO2007123696A2/en
Publication of WO2007123696A3 publication Critical patent/WO2007123696A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.
PCT/US2007/007932 2006-03-30 2007-03-29 In-die optical metrology WO2007123696A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96465406A 2006-03-30 2006-03-30
US11/396,4654 2006-03-30

Publications (2)

Publication Number Publication Date
WO2007123696A2 WO2007123696A2 (en) 2007-11-01
WO2007123696A3 true WO2007123696A3 (en) 2008-09-12

Family

ID=38625471

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/007932 WO2007123696A2 (en) 2006-03-30 2007-03-29 In-die optical metrology

Country Status (1)

Country Link
WO (1) WO2007123696A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7912679B2 (en) * 2007-09-20 2011-03-22 Tokyo Electron Limited Determining profile parameters of a structure formed on a semiconductor wafer using a dispersion function relating process parameter to dispersion
US10151986B2 (en) * 2014-07-07 2018-12-11 Kla-Tencor Corporation Signal response metrology based on measurements of proxy structures

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6885446B2 (en) * 2001-12-04 2005-04-26 Nova Measuring Instruments Ltd. Method and system for monitoring a process of material removal from the surface of a patterned structure
US6928395B2 (en) * 2001-08-06 2005-08-09 Timbre Technologies, Inc. Method and system for dynamic learning through a regression-based library generation process
US20050264806A1 (en) * 2001-10-09 2005-12-01 Borden Peter G Calibration as well as measurement on the same workpiece during fabrication
US20060009872A1 (en) * 2004-07-08 2006-01-12 Timbre Technologies, Inc. Optical metrology model optimization for process control

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6928395B2 (en) * 2001-08-06 2005-08-09 Timbre Technologies, Inc. Method and system for dynamic learning through a regression-based library generation process
US20050264806A1 (en) * 2001-10-09 2005-12-01 Borden Peter G Calibration as well as measurement on the same workpiece during fabrication
US6885446B2 (en) * 2001-12-04 2005-04-26 Nova Measuring Instruments Ltd. Method and system for monitoring a process of material removal from the surface of a patterned structure
US20060009872A1 (en) * 2004-07-08 2006-01-12 Timbre Technologies, Inc. Optical metrology model optimization for process control

Also Published As

Publication number Publication date
WO2007123696A2 (en) 2007-11-01

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