WO2007130095A2 - Single layer construction for ultra small devices - Google Patents

Single layer construction for ultra small devices Download PDF

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Publication number
WO2007130095A2
WO2007130095A2 PCT/US2006/022786 US2006022786W WO2007130095A2 WO 2007130095 A2 WO2007130095 A2 WO 2007130095A2 US 2006022786 W US2006022786 W US 2006022786W WO 2007130095 A2 WO2007130095 A2 WO 2007130095A2
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WO
WIPO (PCT)
Prior art keywords
ultra
structures
array
resonant structures
small resonant
Prior art date
Application number
PCT/US2006/022786
Other languages
French (fr)
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WO2007130095A3 (en
Inventor
Jonathan Gorrell
Mark Davidson
Jean Tokarz
Andres Trucco
Original Assignee
Virgin Islands Microsystems, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Virgin Islands Microsystems, Inc. filed Critical Virgin Islands Microsystems, Inc.
Priority to EP06844144A priority Critical patent/EP2022072A4/en
Publication of WO2007130095A2 publication Critical patent/WO2007130095A2/en
Publication of WO2007130095A3 publication Critical patent/WO2007130095A3/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons

Definitions

  • This disclosure relates to producing and using ultra-small metal
  • the frequencies can vary between micro ⁇
  • the processing begins with a non-conductive substrates (e.g., glass, oxidized
  • a semi-conductive substrate e.g., doped
  • the optimal next step can be the coating or formation
  • the conductive layer is then etched or patterned into the desired ultra-small
  • the mask layer can be removed, although in some instances that may not be
  • the patterned base structure will be positioned in an electroplating bath and a desired metal will
  • photoresist layer can be removed leaving formed metal structures on the
  • micro-sized measured in ones, tens or hundreds of microns are described as micro-sized.
  • Ultra-small hereinafter refers
  • micro structures shall mean microscopic structural dimensions and shall include so-called “micro” structures, “nano” structures, or any other very small structures that will produce
  • FIG. 1 is a schematic diagram of a first example and embodiment
  • Fig. 2 is a graph showing intensity versus post or finger length for
  • FIG. 3 is a perspective view of another embodiment of the present invention.
  • FIG. 4 is a view of another embodiment of the present invention.
  • Fig. 5 is a graph showing an example of intensity and wavelength
  • FIG. 6 an example of another embodiment of the present invention.
  • Fig. 7 is another embodiment of the present invention.
  • metal need not be a layer of metal
  • contiguous layer but can be a series of structures or, for example, posts or fingers
  • a substrate 13 such as a semiconductor
  • the posts or fingers 15 may be etched or plated in
  • the posts or fingers can be conductively isolated from each
  • the metal can be any metal that can be used as a conductor to connect to the posts or fingers.
  • the metal can be any metal that can be used as a conductor to connect to the posts or fingers.
  • the metal can be any metal that can be used as a conductor to connect to the posts or fingers.
  • a charged particle beam such as an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron
  • the source 10 can be any desired source
  • the metal posts 15 include individual post members
  • the number of post members 15a...15n can be as few as one and
  • the post members and/or cavities resonate when the electron
  • element 14 is comprised ' a series of posts or fingers 15 which are separated by a
  • Each post 15 also has a thickness that takes up a portion of the spacing between posts 15.
  • the posts 15 also have a length 125 and a height
  • Resonant structures here posts 15, are fabricated from resonating
  • material e.g., from a conductor such as metal (e.g., silver, gold, aluminum and
  • the various resonant structures can be any suitable resonant structures.
  • resonant element 14 are formed by being etched, electroplated or otherwise
  • Silver posts can be any type of silver posts directly on the substrate. Silver posts can be any type of silver posts.
  • the shape of the posts 15 may also be shapes other
  • rectangles such as simple shapes (e.g., circles, ovals, arcs and squares),
  • nickel 34 or other adhesive layer or material, at, for example,
  • a thickness of about 10 nm a thickness of about 10 nm, and a layer of silver 36 having, for example, a
  • the chip 30 includes two rows 38 and 40 of
  • one row could be arranged to resonate at one
  • ultra-small structures in rows 38 and 40 can be formed by etching or plating techniques, and can have a wide variety of shapes and sizes, with a variety of
  • a chip 30 can be provided, for example, with a row
  • red light for example, red light. It must be understood and appreciated that the light
  • the invention centers around
  • the present invention is not limited to having only one array
  • one wavelength element HOB comprised of posts or fingers 115B, with a spacing between posts or fingers shown at 120B 5 lengths at 125B and heights (not
  • a blue color has been constructed on a substrate 103 so as to be on one
  • a beam 130 of charged particles e.g., electrons, or positively of negatively
  • a second wavelength element HOG comprised of posts or
  • fingers 115G with a spacing between posts or fingers shown at 120G, lengths at
  • second frequency for example a green color
  • beam characteristics such as beam intensity
  • electromagnetic wave produced by the system on a row of 220nm fingers (posts) has a recorded intensity and wavelength greater than at the lesser shown finger
  • the frequency is related to the period of the grating
  • is the frequency of the resonance
  • L is the period of the grating
  • n is a
  • is related to the speed of the electron beam, and ⁇ is the angle of
  • nanostructure range, i.e., 1 nm to 1 ⁇ m.
  • Fig. 6 shows another exemplary embodiment of the present
  • the rows can be arranged in two parallel rows, or alternatively the rows can be arranged
  • a charged particle beam 54 and 56 are directed past the rows
  • element/cell 62 is also referred to herein as a bi-state device or cell or element.
  • rows 50 and 52 could be angled to be parallel with beam paths 58
  • deflectors 70 and 68 are arranged in any other angle with deflectors 70 and 68 being
  • Fig. 7 shows another embodiment where a plurality of rows of
  • wavelength elements 200R-216B have been formed as a composite array on a
  • 206G-210G, and 212B-216B, respectively, are for illustrative purposes only, and
  • each row of resonant structures 200R-216B can be any number of resonant structures 200R-216B.
  • Fig. 6 a magnetic element or other forms of beam deflectors, as referenced in the
  • rows 200R, 202R and 204R could be
  • each row permits each row to be controlled so that the whole array can be tuned or

Abstract

An array of ultra-small structures of between ones of nanometers to hundreds of micrometers in size that can be energized to produce at least two different frequencies of out put energy or data, with the ultra small structures being formed on a single conductive layer on a substrate. The array can include one row of different ultra small structures, multiple rows of ultra small structures, with each row containing identical structures, or multiple rows of a variety of structures that can produce all spectrums of energy or combinations thereof, including visible light.

Description

SINGLE LAYER CONSTRUCTION FOR ULTRA SMALL
DEVICES
Copyright Notice
[0001] A portion of the disclosure of this patent document contains
material which is subject to copyright or mask work protection. The
copyright or mask work owner has no objection to the facsimile
reproduction by anyone of the patent document or the patent disclosure, as it
appears in the Patent and Trademark Office patent file or records, but
otherwise reserves all copyright or mask work rights whatsoever.
CROSS-REFERENCE TO CO-PENDING APPLICATIONS
[0002] The present invention is related to the following co-pending U.S. Patent
applications: (1) U.S. Patent Application No. 11/238,991 [atty. docket 2549-
0003], filed September 30, 2005, entitled "Ultra-Small Resonating Charged
Particle Beam Modulator"; (2) U.S. Patent Application No. 10/917,511 [atty.
docket 2549-0002], filed on August 13, 2004, entitled "Patterning Thin Metal Film
by Dry Reactive Ion Etching"; (3) U.S. Application No. 11/203,407 [atty. docket
2549-0040], filed on August 15, 2005, entitled "Method Of Patterning Ultra-Small
Structures"; (4) U.S. Application No. 11/243,476 [Atty. Docket 2549-0058], filed on October 5, 2005, entitled "Structures And Methods For Coupling Energy From
An Electromagnetic Wave"; (5) U.S. Application No. 11/243,477 [Atty. Docket
2549-0059], filed on October 5, 2005, entitled "Electron beam induced
resonance,", (6) U.S. Application No. 11/325,432 [Atty. Docket 2549-0021],
entitled "Resonant Structure-Based Display," filed on January 5, 2006; (7) U.S.
Application No. 11/325,571 [Atty. Docket 2549-0063], entitled "Switching Micro-
Resonant Structures By Modulating A Beam Of Charged Particles," filed on
January 5, 2006; (8) U.S. Application No. 11/325,534 [Atty. Docket 2549-0081],
entitled "Switching Micro-Resonant Structures Using At Least One Director,"
filed on January 5, 2006; (9) U.S. Application No. 11/350,812 [Atty. Docket 2549-
0055], entitled "Conductive Polymers for the Electroplating", filed on February
10, 2006; (10) U.S. Application No. 11/302,471 [Atty. Docket 2549-0056],
entitled "Coupled Nano-Resonating Energy Emitting Structures," filed on
December 14, 2005; (11) U.S. Application No. 11/325,448 [Atty. Docket 2549-
0060], entitled "Selectable Frequency Light Emitter", filed on January 5, 2006;
and (12) U.S. Application No. I [Atty. Docket 2549-0086], entitled
"Method For Coupling Out OfA Magnetic Device", filed on even date herewith,
which are all commonly owned with the present application, the entire contents of
each of which are incorporated herein by reference. Field Of The Disclosure
[0003] This disclosure relates to producing and using ultra-small metal
structures formed by using a combination of various coating, etching and
electroplating processing techniques and accomplishing these processing
techniques using a single conductive layer, and to the formation of ultra
small structures on a substrate that can resonate at two or more different
frequencies on the single layer. The frequencies can vary between micro¬
wave and ultra-violet electromagnetic radiation, and preferably will produce
visible light in two or more different frequencies or colors that can then be
used for a variety of purposes including data exchange and the production of
useful light.
Introduction and summary
[0004] hi its broadest form, the process disclosed herein produces ultra-
small structures with a range of sizes described as micro- or nano- sized.
The processing begins with a non-conductive substrates (e.g., glass, oxidized
silicon, plastics and many others) or a semi-conductive substrate (e.g., doped
silicon, compound semiconductor materials (GaAs, InP, GaN,..)), or a
conductive substrate. The optimal next step can be the coating or formation
of a thin layer of nickel followed by the coating or formation of a thin layer of silver on the nickel layer. Then a single layer of a conductive material,
such as silver, gold, nickel, aluminum, or other conductive material is then
applied, deposited, coated or otherwise provided on the thin silver layer, and
the conductive layer is then etched or patterned into the desired ultra-small
shaped devices, or the substrate, on which the thin nickel and silver layers
had been coated, is provided with a mask layer which is patterned and then a
conductive material is deposited, plated or otherwise applied. Thereafter,
the mask layer can be removed, although in some instances that may not be
necessary.
[0005] Electroplating is well known and is fully described in the above
referenced '407 application. For present purposes, electroplating is the
preferred process to employ in the construction of ultra-small resonant
structures.
[0006] An etching could also be used, for example by use of chemical
etching or Reactive Ion Etching (RIE) techniques,, as are described in the
above mentioned '511 application, to develop a final pattern in the
conductive layer.
[0007] Where a photoresist material is first applied to the substrate, and
patterned, then a coating or plating process as is explained in the above
mentioned '407 application could be used. In that case, the patterned base structure will be positioned in an electroplating bath and a desired metal will
be deposited into the holes formed in the mask or protective layer exposed
by one or more of the prior etching processing steps. Thereafter, the mask or
photoresist layer can be removed leaving formed metal structures on the
substrate exhibiting an ultra small size, or alternatively the PR layer will be
removed leaving the formed metal structures lying directly on the substrate.
[0008] Ultra-small structures encompass a range of structure sizes
sometimes described as micro- or nano-sized. Objects with dimensions
measured in ones, tens or hundreds of microns are described as micro-sized.
Objects with dimensions measured in ones, tens or hundreds of nanometers
or less are commonly designated nano-sized. Ultra-small hereinafter refers
to structures and features ranging in size from hundreds of microns in size to
ones of nanometers in size.
GLOSSARY
[0009] As used throughout this document:
[0010] The phrase "ultra-small resonant structure" shall mean any structure of
any material, type or microscopic size that by its characteristics causes electrons to
resonate at a frequency in excess of the microwave frequency.
[0011] The term "ultra-small" within the phrase "ultra-small resonant structure"
shall mean microscopic structural dimensions and shall include so-called "micro" structures, "nano" structures, or any other very small structures that will produce
resonance at frequencies in excess of microwave frequencies.
Brief Description Of Figures
[0012] The invention is better understood by reading the following detailed
description with reference to the accompanying drawings in which:
[0013] FIG. 1 is a schematic diagram of a first example and embodiment
of the present invention;
[0014] Fig. 2 is a graph showing intensity versus post or finger length for
the series of rows of ultra small structures;
[0015] Fig. 3 is a perspective view of another embodiment of the present
invention;
[0016] Fig. 4 is a view of another embodiment of the present invention;
[0017] Fig. 5 is a graph showing an example of intensity and wavelength
versus finger or post length for a series of ultra small structures;
[0018] Fig. 6 an example of another embodiment of the present invention;
and
[0019] Fig. 7 is another embodiment of the present invention.
Description Of The Presently Preferred Exemplary Embodiments Of
The Invention [0020] As shown in Figure 1, a single layer of metal, such as silver or other thin
metal, is produced with the desired pattern or otherwise processed to create a
number of individual resonant structures to form a resonant element 14. Although
sometimes referred to herein as a "layer" of metal, the metal need not be a
contiguous layer, but can be a series of structures or, for example, posts or fingers
15 that are individually present on a substrate 13 (such as a semiconductor
substrate or a circuit board) and area designated as 15A, 15b, 15n..
[0021] When forming the posts 15, while the posts 15 can be isolated from each
other, there is no need to remove the metal between posts or fingers 15 all the way
down to the substrate level, nor does the plating have to place the metal posts
directly on the substrate, but rather they can be formed on the thin silver layer or
the silver/nickel layer referenced above which has been formed on top of the
substrate, for example. That is, the posts or fingers 15 may be etched or plated in
a manner so a layer of conductor remains beneath, between and connecting the
posts. Alternatively, the posts or fingers can be conductively isolated from each
other by removing the entire metal layer between the posts, or by not even using a
conductive layer under the posts or fingers. In one embodiment, the metal can be
silver, although all other conductors and conductive materials, and even
dielectrics, are envisioned as well.
[0022] A charged particle beam, such as an electron beam 12 produced by an
electron microscope, cathode, or any other electron source 10, that is controlled by applying a signal on a data input line 11. The source 10 can be any desired source
of charged particles such as an electron gun, a cathode, an electron source from a
scanning electron microscope, etc. The passing of such an electron beam 12
closely by a series of appropriately-sized resonant structures 15, causes the
electrons in the structures to resonate and produce visible light or other EMR 16,
including, for example, infrared light, visible light or ultraviolet light or any other
electromagnetic radiation at a wide range of frequencies, and often at a frequency
higher than that of microwaves. In Figure 1, resonance occurs within the metal
posts 15 and in the spaces between the metal posts 15 on a substrate 13 and with
the passing electron beam. The metal posts 15 include individual post members
15a, 15b, ...15n. The number of post members 15a...15n can be as few as one and
as many as the available real estate permits. We note that theoretically the present
resonance effect can occur in as few as only a single post, but from our practical
laboratory experience, we have not measured radiation from either a one post or
two post structures. That is, more than two posts have been used to create
measurable radiation using current instrumentation.
[0023] The spaces between the post members 15a, 15b, ...15n (Figure 1) create
individual cavities. The post members and/or cavities resonate when the electron
beam 12 passes by them. By choosing different geometries of the posts and
resonant cavities, and the energy (velocity) of the electron beam, one can produce
visible light (or non- visible EMR) 16 of a variety of different frequencies including, for example, a variety of different colors in the case of visible
emissions, from just a single patterned metal layer.
[0024] That resonance is occurring can be seen in Figure 2. There, the average
results of a set of experiments in which the radiation intensity from an example of
the present invention was plotted (in the y-axis, labeled "counts" of photons, and
measured by a photo multiplier tube as detected current pulses) versus the length
of the fingers or posts 15 that are resonating (in the x-axis, labeled as "finger
length"). The intensity versus finger or post length average plot shows two peaks
(and in some experimental results with more intense outputs, a third peak was
perhaps, though not conclusively, present) of radiation intensity at particular finger
lengths. For additional discussion, reference can be made to U.S. Application No.
11/243,477, previously referenced above, and which is, in its entirety,
incorporated herein by reference. We conclude that certain finger lengths produce
more intensity at certain multiple lengths due to the resonance effect occurring
within the posts 15.
[0025] Exemplary resonant structures are illustrated in several copending
applications, including U.S. Application No. 11/325,432, noted above and is, in its
entirety, incorporated herein by reference. As shown in Figure 1, the resonant
element 14 is comprised' a series of posts or fingers 15 which are separated by a
spacing 18 measured as the beginning of one finger 15a to the beginning of an
adjacent finger 15b. Each post 15 also has a thickness that takes up a portion of the spacing between posts 15. The posts 15 also have a length 125 and a height
(not shown). As illustrated, the posts of Figure 1 are perpendicular to the beam
12. As demonstrated in the above co-pending application, the resonant structures
can have a variety of shapes not limited to the posts 15 shown in Figure 2 herein,
and all such shape variations are included herein.
[0026] Resonant structures, here posts 15, are fabricated from resonating
material (e.g., from a conductor such as metal (e.g., silver, gold, aluminum and
platinum or from an alloy) or from any other material that resonates in the
presence of a charged particle beam). Other exemplary resonating materials
include carbon nanotubes and high temperature superconductors.
[0027] When creating the resonating elements 14, and the resonating structures
15, according to the present invention, the various resonant structures can be
constructed in multiple layers of resonating materials but are preferably
constructed in a single layer of resonating material as described hereinafter.
[0028] In one single layer embodiment, all the resonant structures 15 of a
resonant element 14 are formed by being etched, electroplated or otherwise
formed and shaped in the same processing step.
[0029] At least in the case of silver, etching does not need to remove the
material between segments or posts all the way down to the substrate level, nor
does the plating have to place the posts directly on the substrate. Silver posts can
be on a silver layer on top of the substrate. In fact, we discovered that, due to various coupling effects, better results are obtained when the silver posts are set on
a silver layer, which itself is on the substrate.
[0030] As noted previously, the shape of the posts 15 may also be shapes other
than rectangles, such as simple shapes (e.g., circles, ovals, arcs and squares),
complex shapes (e.g., such as semi-circles, angled fingers, serpentine structures
and embedded structures (i.e., structures with a smaller geometry within a larger
geometry, thereby creating more complex resonances)) and those including
waveguides or complex cavities. The finger structures, regardless of any
particular shape, will be collectively referred to herein as "segments."
[0031] Turning now to specific exemplary embodiments, for example a chip 30
as shown in Figure 3, can be comprised of a substrate 32 that has been provided
with a thin layer of nickel 34, or other adhesive layer or material, at, for example,
a thickness of about 10 nm, and a layer of silver 36 having, for example, a
thickness of about 100 nm. As shown, the chip 30 includes two rows 38 and 40 of
posts or periodic structures, preferably adjacent one another, each being comprised
of a plurality of ultra-small structures or segments, which collectively comprise
an array of ultra small structures, a resonating element, which will resonate at two
different frequencies. For example, one row could be arranged to resonate at one
frequency while the other could be arranged to resonate at another and different
frequency. As explained above, and in the above copending applications, the
ultra-small structures in rows 38 and 40 can be formed by etching or plating techniques, and can have a wide variety of shapes and sizes, with a variety of
spacing there between and a variety of heights. Through a selection of these
parameters as obtained by such processing techniques, and with reference to what
is desired to be accomplished, a chip 30 can be provided, for example, with a row
of a plurality of ultra-small structures that will produce, for example, green
light and another row, for example, that could produce and output, such as,
for example, red light. It must be understood and appreciated that the light
or other EMR being emitted by rows 38 and 40, when energized or excited
by a beam of charged particles as is shown at 41, is desirably achieved by
having the emission of energy be at any two different frequencies, whether
in the visible light spectrum, the microwave spectrum, the infra-red
spectrum or some other energy spectrum. The invention centers around
having ultra small structures formed in one layer of a conductive material,
and either isolated or connected as discussed herein, so that they will
resonate at two or more different frequencies.
[0032] The present invention is not limited to having only one array
comprised of two rows of ultra-small structures. For example, the invention
contemplates having a single row 42 comprised of a plurality of the ultra-
small resonant structure, but with the row 42 having two different sections, A
and B formed of different ultra-small resonant structures, with the A section resonating at one frequency while the B section resonates at a different
frequency. In this instance, the two sections, A and B, will emit energy at
different frequencies even though they are contained in one row of
structures. Also, the present invention could, for example, also encompass a
device, such as a chip, where its surface is completely filled with or
occupied by various arrays of ultra-small structures each of which could be
identical to one another, where each was different, or where there were
patterns of similar and dissimilar arrays each of which could be emitting or
receiving energy or light at a variety of frequencies according to the pattern
designed into the arrays of ultra small structures. The processing techniques
discussed and disclosed herein, and in the above referenced applications
incorporated herein by reference, permit production of any order, design,
type, shape, arrangement, size and placement of arrays, elements, posts,
segments and/or ultra-small structures, or any grouping thereof, as a
designer may wish, in order to achieve an input, output onto or from the
surface of the chip to provide light, data transfer or other information or data
into or out of the chip or both, or between different parts of a chip or
adjacent chips.
[0033] Another exemplary array of resonant elements is shown in Figure 4,
where one wavelength element HOB, comprised of posts or fingers 115B, with a spacing between posts or fingers shown at 120B5 lengths at 125B and heights (not
shown), for producing electromagnetic radiation with a first frequency, for
example a blue color, has been constructed on a substrate 103 so as to be on one
side of a beam 130 of charged particles (e.g., electrons, or positively of negatively
charged ions)and a second wavelength element HOG, comprised of posts or
fingers 115G, with a spacing between posts or fingers shown at 120G, lengths at
125G and heights (not shown), for producing electromagnetic radiation with a
second frequency, for example a green color, has been constructed on a substrate
103 so as to be the opposite side of the beam 130. It should be understood that
other forms of these wavelength elements could be formed, including using a
wavelength element that would produce a red color could be used in place of
either the blue or green elements, or that combination elements comprised of ultra
small structures that would produce a variety of colors could also be used.
However, the spacing and lengths of the fingers 115G and 115B of the resonant
structures 11OG and HOB, respectively, are for illustrative purposes only and are
not intended to represent any actual relationship between the period or spacing 120
of the fingers, the lengths of the fingers 115 and the frequency of the emitted
electromagnetic radiation. However, the dimensions of exemplary resonant
structures are provided in Table 1 below including for red light producing
structures. Table 1
Figure imgf000017_0001
[0034] As dimensions (e.g., height and/or length) change, the intensity of the
radiation may change as well. Moreover, depending on the dimensions, harmonics
(e.g., second and third harmonics) may occur. For post height, length, and width,
intensity appears oscillatory in that finding the optimal peak of each mode created
the highest output. When operating in the velocity dependent mode (where the
finger period depicts the dominant output radiation) the alignment of the
geometric modes of the fingers are used to increase the output intensity. However
it is seen that there are also radiation components due to geometric mode
excitation during this time, but they do not appear to dominate the output. Optimal
overall output comes when there is constructive modal alignment in as many axes
as possible.
[0035] We have also detected that, unlike the general theory on Smith-Purcell
radiation, which states that frequency is only dependant on period and electron
beam characteristics (such as beam intensity), the frequency of our detected beam
changes with the finger length. Thus, as shown in Figure 5, the frequency of the
electromagnetic wave produced by the system on a row of 220nm fingers (posts) has a recorded intensity and wavelength greater than at the lesser shown finger
lengths. With Smith-Purcell, the frequency is related to the period of the grating
(recalling that Smith-Purcell is produced by a diffraction grating) and beam
intensity according to:
Figure imgf000018_0001
where λ is the frequency of the resonance, L is the period of the grating, n is a
constant, β is related to the speed of the electron beam, and Θ is the angle of
diffraction of the electron.
[0036] Each of the dimensions mentioned above can be any value in the
nanostructure range, i.e., 1 nm to 1 μm. Within such parameters, a series of posts
can be constructed that output substantial EMR in the infrared, visible and
ultraviolet portions of the spectrum and which can be optimized based on
alterations of the geometry, electron velocity and density, and metal/layer type. It
should also be possible to generate EMR of longer wavelengths as well. Unlike a
Smith-Purcell device, the resultant radiation from such a structure is intense
enough to be visible to the human eye with only 30 nanoamperes of current.
[0037] Fig. 6 shows another exemplary embodiment of the present
invention where two rows comprised of a plurality of resonating structures, 50 and
52, can be arranged in two parallel rows, or alternatively the rows can be arranged
at any desired angle. A charged particle beam 54 and 56 are directed past the rows
50 and 52, respectively by the operation of a magnetic element/cell 62 which can be in one of two states, referred to here as 'TST" and "S". Such a magnetic
element/cell 62 is also referred to herein as a bi-state device or cell or element. A
beam 64 of charged particles (emitted by an emitter 66 - a source of charged
particles) is deflected by the magnetic element 62, depending upon and according
to the state of the magnetic element. When the magnetic element 62 is in its
so-called "N" state, the particle beam 64 will be deflected in the N direction, along
path 60 to a reflector 68 which then deflects the beam along a path 56 parallel to
row 52. When the magnetic element 62 is in its so-called "S" state, the particle
beam 64 will be deflected in the S direction along a path 58 toward a reflector 70
that then deflects the beam among a path 54 parallel to row 50. It should be
understood that rows 50 and 52 could be angled to be parallel with beam paths 58
and 60, respectively, or at any other angle with deflectors 70 and 68 being
appropriately angled to direct the beam along the row of resonating elements.
[0038] For the sake of this description, the drawings show the particle beam
traveling in both the N and the S directions. Those of skill in the art will
immediately understand that the charged particle beam will only travel in one of
those directions at any one time.
[0039] Fig. 7 shows another embodiment where a plurality of rows of
wavelength elements 200R-216B have been formed as a composite array on a
substrate 106 so that all three visible light spectrums can be produced by the array
(i.e., red, green and blue). The spacings between and the lengths of the fingers or posts being used, 218R, 220G, and 222B of the resonant structures 200R-204R,
206G-210G, and 212B-216B, respectively, are for illustrative purposes only, and
are not intended to represent any actual relationship between the period or
spacings between the fingers or posts, the length of the fingers or posts and the
frequency of the emitted electromagnetic radiation. Reference can be made to
Table 1 above for specifics concerning these parameters.
[0040] As shown in Fig. 7, each row of resonant structures 200R-216B can
include its own source of charged particles 232, or as discussed above concerning
Fig. 6 a magnetic element or other forms of beam deflectors, as referenced in the
above related applications, which have been incorporated herein, can be used to
direct beams of charged particles past these rows of resonating structures. It
should also be understood that rows 200R, 202R and 204R, for example, could be
formed so that each produced exactly the same color and shade of red, or each
could be formed to produce a different shade of that color, for example light red,
medium red and/or dark red. This concept of having color shading applies equally
as well to the green and blue portions of the array.
[0041] Each row 200R-216B will produce a uniform light output, yet the
combination of the plurality of rows, and the plurality of fingers or posts in each
row, permits each row to be controlled so that the whole array can be tuned or
constructed, by a choice of the parameters mentioned herein and in the above
noted co-pending applications, to produce the light or other EMR output desired. [0042] It should also be understood that the present invention is not limited to
having three rows of each of three colors, but rather to the concept of having at
least a sufficient number of ultra small structures that will produce two different
frequencies on the same surface at the same time. Thus, the chip or what ever
other substrate is to be used, could have, and the invention contemplates, all
possible combinations of ultra small structures whether in individual rows,
adjacent rows or non-adjacent rows, as well as all combinations of colors and
shadings thereof as are possible to produce, as well as all possible combinations of
the production of frequencies in other or mixed spectrums. Further, the surface
can have a limited number of ultra small structures that will accomplish that
objective including, as well, as many rows and as many ultra small structure as the
surface can hold, including individual rows each of which are comprised of a
plurality of different ultra small structures.
[0043] While the invention has been described in connection with what is
presently considered to be the most practical and preferred embodiment, it is
to be understood that the invention is not to be limited to the disclosed
embodiment, but on the contrary, is intended to cover various modifications
and equivalent arrangements included within the spirit and scope of the
appended claims.

Claims

What is claimed is:
1. An array of ultra-small structures on a surface, comprising:
a substrate;
at least first and second ultra-small resonant structures formed on the
substrate with the first and second ultra-small resonant structures each
producing a different frequency output;
a conductive layer positioned beneath each of the ultra-small resonant
structures; and
a source of a beam of charged particles directed toward the at least
first and second ultra-small resonant structures so that each ultra-small
resonant structure resonates at its desired frequency.
2. The array as in claim 1 wherein said ultra-small resonant
structures are comprised of a material selected from the group consisting
silver (Ag)5 nickel (Ni), copper (Cu); aluminum (Al), gold (Au) and
platinum (Pt).
3. The array as in claim 1 further including a plurality of each of
the first and second ultra-small resonant structures, with the plurality of the first and second ultra-small resonant structures being space apart from each
other.
4. The array as in claim 1 wherein said first and second ultra-small
resonant structures are formed by an electroplating process.
5. The array as in claim 1 wherein said first and second ultra-small
resonant structures are formed by coating and etching techniques.
6. The array as in claim 1 wherein a conductive material extends
between each of the ultra-small resonant structures
7. The array as in claim 3 wherein the plurality of first and second
ultra-small resonant structures are formed in respective rows.
8. The array as in claim 7 wherein the rows are straight.
9. The array as in claim 1 further including a plurality of rows
comprised of a plurality of spaced apart ultra-small resonant structures, with
the ultra-small resonant structures being formed on a single conductive layer, and with each row within the plurality of rows producing a different
frequency output when energized by the beam of charged particles.
10. The array as in claim 9 wherein the substrate comprises a chip.
11. The array as in claim 9 wherein further including a deflector to
control the beam of charged particles relative to the plurality of rows.
PCT/US2006/022786 2006-05-05 2006-06-12 Single layer construction for ultra small devices WO2007130095A2 (en)

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7586097B2 (en) 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
US7791053B2 (en) * 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
US9575249B2 (en) 2013-08-05 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a metal grating in a waveguide and device formed
CN106601573B (en) * 2017-01-25 2018-04-10 中国科学技术大学 A kind of electromagnetic radiation source
US20230029210A1 (en) * 2021-07-22 2023-01-26 National Tsing Hua University Dielectric-grating-waveguide free-electron laser

Family Cites Families (302)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2634372A (en) * 1953-04-07 Super high-frequency electromag
US622866A (en) * 1899-04-11 Sylvania
US1948384A (en) * 1932-01-26 1934-02-20 Research Corp Method and apparatus for the acceleration of ions
US2307086A (en) * 1941-05-07 1943-01-05 Univ Leland Stanford Junior High frequency electrical apparatus
US2431396A (en) 1942-12-21 1947-11-25 Rca Corp Current magnitude-ratio responsive amplifier
US2397905A (en) * 1944-08-07 1946-04-09 Int Harvester Co Thrust collar construction
US2473477A (en) 1946-07-24 1949-06-14 Raythcon Mfg Company Magnetic induction device
US2932798A (en) * 1956-01-05 1960-04-12 Research Corp Imparting energy to charged particles
US2944183A (en) 1957-01-25 1960-07-05 Bell Telephone Labor Inc Internal cavity reflex klystron tuned by a tightly coupled external cavity
US2966611A (en) 1959-07-21 1960-12-27 Sperry Rand Corp Ruggedized klystron tuner
US3231779A (en) * 1962-06-25 1966-01-25 Gen Electric Elastic wave responsive apparatus
US3274428A (en) * 1962-06-29 1966-09-20 English Electric Valve Co Ltd Travelling wave tube with band pass slow wave structure whose frequency characteristic changes along its length
GB1054461A (en) * 1963-02-06
US3315117A (en) * 1963-07-15 1967-04-18 Burton J Udelson Electrostatically focused electron beam phase shifter
US3387169A (en) * 1965-05-07 1968-06-04 Sfd Lab Inc Slow wave structure of the comb type having strap means connecting the teeth to form iterative inductive shunt loadings
US4746201A (en) * 1967-03-06 1988-05-24 Gordon Gould Polarizing apparatus employing an optical element inclined at brewster's angle
US4053845A (en) 1967-03-06 1977-10-11 Gordon Gould Optically pumped laser amplifiers
US3546524A (en) * 1967-11-24 1970-12-08 Varian Associates Linear accelerator having the beam injected at a position of maximum r.f. accelerating field
US3571642A (en) * 1968-01-17 1971-03-23 Ca Atomic Energy Ltd Method and apparatus for interleaved charged particle acceleration
US3543147A (en) 1968-03-29 1970-11-24 Atomic Energy Commission Phase angle measurement system for determining and controlling the resonance of the radio frequency accelerating cavities for high energy charged particle accelerators
US3586899A (en) 1968-06-12 1971-06-22 Ibm Apparatus using smith-purcell effect for frequency modulation and beam deflection
US3560694A (en) * 1969-01-21 1971-02-02 Varian Associates Microwave applicator employing flat multimode cavity for treating webs
US3761828A (en) 1970-12-10 1973-09-25 J Pollard Linear particle accelerator with coast through shield
US3886399A (en) * 1973-08-20 1975-05-27 Varian Associates Electron beam electrical power transmission system
US3923568A (en) 1974-01-14 1975-12-02 Int Plasma Corp Dry plasma process for etching noble metal
DE2429612C2 (en) 1974-06-20 1984-08-02 Siemens AG, 1000 Berlin und 8000 München Acousto-optical data input converter for block-organized holographic data storage and method for its control
US4704583A (en) 1974-08-16 1987-11-03 Gordon Gould Light amplifiers employing collisions to produce a population inversion
FR2386232A1 (en) * 1977-03-31 1978-10-27 Cgr Mev ACCELERATOR STRUCTURE FOR LINEAR CHARGED PARTICLE ACCELERATOR OPERATING IN STANDING WAVE REGIME
US4189228A (en) * 1979-02-02 1980-02-19 Eastman Kodak Company Apparatus for detecting locators on a film strip
US4296354A (en) * 1979-11-28 1981-10-20 Varian Associates, Inc. Traveling wave tube with frequency variable sever length
US4282436A (en) 1980-06-04 1981-08-04 The United States Of America As Represented By The Secretary Of The Navy Intense ion beam generation with an inverse reflex tetrode (IRT)
US4453108A (en) 1980-11-21 1984-06-05 William Marsh Rice University Device for generating RF energy from electromagnetic radiation of another form such as light
US4661783A (en) * 1981-03-18 1987-04-28 The United States Of America As Represented By The Secretary Of The Navy Free electron and cyclotron resonance distributed feedback lasers and masers
US4450554A (en) * 1981-08-10 1984-05-22 International Telephone And Telegraph Corporation Asynchronous integrated voice and data communication system
US4528659A (en) 1981-12-17 1985-07-09 International Business Machines Corporation Interleaved digital data and voice communications system apparatus and method
US4589107A (en) * 1982-11-30 1986-05-13 Itt Corporation Simultaneous voice and data communication and data base access in a switching system using a combined voice conference and data base processing module
US4652703A (en) * 1983-03-01 1987-03-24 Racal Data Communications Inc. Digital voice transmission having improved echo suppression
US4482779A (en) 1983-04-19 1984-11-13 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Inelastic tunnel diodes
US4598397A (en) 1984-02-21 1986-07-01 Cxc Corporation Microtelephone controller
US4713581A (en) 1983-08-09 1987-12-15 Haimson Research Corporation Method and apparatus for accelerating a particle beam
US4829527A (en) * 1984-04-23 1989-05-09 The United States Of America As Represented By The Secretary Of The Army Wideband electronic frequency tuning for orotrons
FR2564646B1 (en) * 1984-05-21 1986-09-26 Centre Nat Rech Scient IMPROVED FREE ELECTRON LASER
DE3479468D1 (en) 1984-05-23 1989-09-21 Ibm Digital transmission system for a packetized voice
US4819228A (en) 1984-10-29 1989-04-04 Stratacom Inc. Synchronous packet voice/data communication system
GB2171576B (en) 1985-02-04 1989-07-12 Mitel Telecom Ltd Spread spectrum leaky feeder communication system
US4675863A (en) 1985-03-20 1987-06-23 International Mobile Machines Corp. Subscriber RF telephone system for providing multiple speech and/or data signals simultaneously over either a single or a plurality of RF channels
JPS6229135A (en) 1985-07-29 1987-02-07 Advantest Corp Charged particle beam exposure and device thereof
IL79775A (en) 1985-08-23 1990-06-10 Republic Telcom Systems Corp Multiplexed digital packet telephone system
US4727550A (en) 1985-09-19 1988-02-23 Chang David B Radiation source
US4740963A (en) * 1986-01-30 1988-04-26 Lear Siegler, Inc. Voice and data communication system
US4712042A (en) 1986-02-03 1987-12-08 Accsys Technology, Inc. Variable frequency RFQ linear accelerator
JPS62142863U (en) 1986-03-05 1987-09-09
JPH0763171B2 (en) 1986-06-10 1995-07-05 株式会社日立製作所 Data / voice transmission / reception method
US4761059A (en) 1986-07-28 1988-08-02 Rockwell International Corporation External beam combining of multiple lasers
US4813040A (en) 1986-10-31 1989-03-14 Futato Steven P Method and apparatus for transmitting digital data and real-time digitalized voice information over a communications channel
US5163118A (en) 1986-11-10 1992-11-10 The United States Of America As Represented By The Secretary Of The Air Force Lattice mismatched hetrostructure optical waveguide
JPH07118749B2 (en) * 1986-11-14 1995-12-18 株式会社日立製作所 Voice / data transmission equipment
US4815705A (en) * 1986-11-27 1989-03-28 Toyoda Gosei Co., Ltd. Valve body
US4806859A (en) * 1987-01-27 1989-02-21 Ford Motor Company Resonant vibrating structures with driving sensing means for noncontacting position and pick up sensing
BR8805263A (en) 1987-02-09 1989-08-15 Tlv Co Ltd OPERATING DETECTOR FOR CONDENSATION WATER SEPARATOR
US4932022A (en) 1987-10-07 1990-06-05 Telenova, Inc. Integrated voice and data telephone system
US4864131A (en) 1987-11-09 1989-09-05 The University Of Michigan Positron microscopy
US4838021A (en) 1987-12-11 1989-06-13 Hughes Aircraft Company Electrostatic ion thruster with improved thrust modulation
US4890282A (en) 1988-03-08 1989-12-26 Network Equipment Technologies, Inc. Mixed mode compression for data transmission
US4866704A (en) 1988-03-16 1989-09-12 California Institute Of Technology Fiber optic voice/data network
US4887265A (en) 1988-03-18 1989-12-12 Motorola, Inc. Packet-switched cellular telephone system
US5185073A (en) * 1988-06-21 1993-02-09 International Business Machines Corporation Method of fabricating nendritic materials
JPH0744511B2 (en) 1988-09-14 1995-05-15 富士通株式会社 High suburb rate multiplexing method
US5130985A (en) 1988-11-25 1992-07-14 Hitachi, Ltd. Speech packet communication system and method
FR2641093B1 (en) 1988-12-23 1994-04-29 Alcatel Business Systems
US4981371A (en) * 1989-02-17 1991-01-01 Itt Corporation Integrated I/O interface for communication terminal
US5023563A (en) 1989-06-08 1991-06-11 Hughes Aircraft Company Upshifted free electron laser amplifier
US5036513A (en) 1989-06-21 1991-07-30 Academy Of Applied Science Method of and apparatus for integrated voice (audio) communication simultaneously with "under voice" user-transparent digital data between telephone instruments
US5157000A (en) 1989-07-10 1992-10-20 Texas Instruments Incorporated Method for dry etching openings in integrated circuit layers
US5155726A (en) 1990-01-22 1992-10-13 Digital Equipment Corporation Station-to-station full duplex communication in a token ring local area network
US5235248A (en) 1990-06-08 1993-08-10 The United States Of America As Represented By The United States Department Of Energy Method and split cavity oscillator/modulator to generate pulsed particle beams and electromagnetic fields
US5127001A (en) 1990-06-22 1992-06-30 Unisys Corporation Conference call arrangement for distributed network
US5113141A (en) * 1990-07-18 1992-05-12 Science Applications International Corporation Four-fingers RFQ linac structure
US5263043A (en) 1990-08-31 1993-11-16 Trustees Of Dartmouth College Free electron laser utilizing grating coupling
US5268693A (en) 1990-08-31 1993-12-07 Trustees Of Dartmouth College Semiconductor film free electron laser
US5128729A (en) 1990-11-13 1992-07-07 Motorola, Inc. Complex opto-isolator with improved stand-off voltage stability
US5214650A (en) * 1990-11-19 1993-05-25 Ag Communication Systems Corporation Simultaneous voice and data system using the existing two-wire inter-face
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5187591A (en) * 1991-01-24 1993-02-16 Micom Communications Corp. System for transmitting and receiving aural information and modulated data
US5341374A (en) 1991-03-01 1994-08-23 Trilan Systems Corporation Communication network integrating voice data and video with distributed call processing
US5150410A (en) 1991-04-11 1992-09-22 Itt Corporation Secure digital conferencing system
US5283819A (en) * 1991-04-25 1994-02-01 Compuadd Corporation Computing and multimedia entertainment system
FR2677490B1 (en) 1991-06-07 1997-05-16 Thomson Csf SEMICONDUCTOR OPTICAL TRANSCEIVER.
GB9113684D0 (en) 1991-06-25 1991-08-21 Smiths Industries Plc Display filter arrangements
US5229782A (en) * 1991-07-19 1993-07-20 Conifer Corporation Stacked dual dipole MMDS feed
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5305312A (en) * 1992-02-07 1994-04-19 At&T Bell Laboratories Apparatus for interfacing analog telephones and digital data terminals to an ISDN line
US5466929A (en) 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
WO1993018428A2 (en) 1992-03-13 1993-09-16 Kopin Corporation Head-mounted display system
US5659228A (en) * 1992-04-07 1997-08-19 Mitsubishi Denki Kabushiki Kaisha Charged particle accelerator
WO1993021663A1 (en) 1992-04-08 1993-10-28 Georgia Tech Research Corporation Process for lift-off of thin film materials from a growth substrate
US5233623A (en) 1992-04-29 1993-08-03 Research Foundation Of State University Of New York Integrated semiconductor laser with electronic directivity and focusing control
US5282197A (en) * 1992-05-15 1994-01-25 International Business Machines Low frequency audio sub-channel embedded signalling
US5562838A (en) * 1993-03-29 1996-10-08 Martin Marietta Corporation Optical light pipe and microwave waveguide interconnects in multichip modules formed using adaptive lithography
US5539414A (en) 1993-09-02 1996-07-23 Inmarsat Folded dipole microstrip antenna
TW255015B (en) 1993-11-05 1995-08-21 Motorola Inc
US5578909A (en) 1994-07-15 1996-11-26 The Regents Of The Univ. Of California Coupled-cavity drift-tube linac
US5608263A (en) * 1994-09-06 1997-03-04 The Regents Of The University Of Michigan Micromachined self packaged circuits for high-frequency applications
JP2770755B2 (en) 1994-11-16 1998-07-02 日本電気株式会社 Field emission type electron gun
US5504341A (en) * 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
JP2921430B2 (en) 1995-03-03 1999-07-19 双葉電子工業株式会社 Optical writing element
US5604352A (en) * 1995-04-25 1997-02-18 Raychem Corporation Apparatus comprising voltage multiplication components
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
JP3487699B2 (en) 1995-11-08 2004-01-19 株式会社日立製作所 Ultrasonic treatment method and apparatus
US5889449A (en) 1995-12-07 1999-03-30 Space Systems/Loral, Inc. Electromagnetic transmission line elements having a boundary between materials of high and low dielectric constants
KR0176876B1 (en) 1995-12-12 1999-03-20 구자홍 Magnetron
JPH09223475A (en) 1996-02-19 1997-08-26 Nikon Corp Electromagnetic deflector and charge particle beam transfer apparatus using thereof
US5825140A (en) 1996-02-29 1998-10-20 Nissin Electric Co., Ltd. Radio-frequency type charged particle accelerator
US5663971A (en) 1996-04-02 1997-09-02 The Regents Of The University Of California, Office Of Technology Transfer Axial interaction free-electron laser
US5821705A (en) 1996-06-25 1998-10-13 The United States Of America As Represented By The United States Department Of Energy Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators
AU4055297A (en) 1996-08-08 1998-02-25 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US5889797A (en) * 1996-08-26 1999-03-30 The Regents Of The University Of California Measuring short electron bunch lengths using coherent smith-purcell radiation
KR100226752B1 (en) 1996-08-26 1999-10-15 구본준 Method for forming multi-metal interconnection layer of semiconductor device
US5811943A (en) 1996-09-23 1998-09-22 Schonberg Research Corporation Hollow-beam microwave linear accelerator
AU4896297A (en) 1996-10-18 1998-05-15 Microwave Technologies Inc. Rotating-wave electron beam accelerator
US5780970A (en) 1996-10-28 1998-07-14 University Of Maryland Multi-stage depressed collector for small orbit gyrotrons
US5790585A (en) 1996-11-12 1998-08-04 The Trustees Of Dartmouth College Grating coupling free electron laser apparatus and method
US5744919A (en) * 1996-12-12 1998-04-28 Mishin; Andrey V. CW particle accelerator with low particle injection velocity
US5757009A (en) 1996-12-27 1998-05-26 Northrop Grumman Corporation Charged particle beam expander
JPH10200204A (en) * 1997-01-06 1998-07-31 Fuji Xerox Co Ltd Surface-emitting semiconductor laser, manufacturing method thereof, and surface-emitting semiconductor laser array using the same
US6624916B1 (en) 1997-02-11 2003-09-23 Quantumbeam Limited Signalling system
DE69836734D1 (en) * 1997-02-20 2007-02-08 Univ California PLASMON SWING PARTS, METHOD AND DEVICE
US6008496A (en) 1997-05-05 1999-12-28 University Of Florida High resolution resonance ionization imaging detector and method
US5821836A (en) 1997-05-23 1998-10-13 The Regents Of The University Of Michigan Miniaturized filter assembly
CZ298765B6 (en) * 1997-06-19 2008-01-23 European Organization For Nuclear Research Method of exposing material to neutron flux, method of producing useful isotope comprising such exposing method and method of transmuting at least one long-lived isotope comprising such exposing method
US6040625A (en) * 1997-09-25 2000-03-21 I/O Sensors, Inc. Sensor package arrangement
US5972193A (en) 1997-10-10 1999-10-26 Industrial Technology Research Institute Method of manufacturing a planar coil using a transparency substrate
JP2981543B2 (en) * 1997-10-27 1999-11-22 金沢大学長 Electron tube type one-way optical amplifier
US6117784A (en) 1997-11-12 2000-09-12 International Business Machines Corporation Process for integrated circuit wiring
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6370306B1 (en) * 1997-12-15 2002-04-09 Seiko Instruments Inc. Optical waveguide probe and its manufacturing method
KR100279737B1 (en) 1997-12-19 2001-02-01 정선종 Short-wavelength photoelectric device composed of field emission device and optical device and fabrication method thereof
US5963857A (en) 1998-01-20 1999-10-05 Lucent Technologies, Inc. Article comprising a micro-machined filter
US6338968B1 (en) * 1998-02-02 2002-01-15 Signature Bioscience, Inc. Method and apparatus for detecting molecular binding events
EP0969493A1 (en) 1998-07-03 2000-01-05 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Apparatus and method for examining specimen with a charged particle beam
JP2972879B1 (en) 1998-08-18 1999-11-08 金沢大学長 One-way optical amplifier
US6316876B1 (en) 1998-08-19 2001-11-13 Eiji Tanabe High gradient, compact, standing wave linear accelerator structure
JP3666267B2 (en) 1998-09-18 2005-06-29 株式会社日立製作所 Automatic charged particle beam scanning inspection system
US6577040B2 (en) 1999-01-14 2003-06-10 The Regents Of The University Of Michigan Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices
US6297511B1 (en) 1999-04-01 2001-10-02 Raytheon Company High frequency infrared emitter
US6724486B1 (en) * 1999-04-28 2004-04-20 Zygo Corporation Helium- Neon laser light source generating two harmonically related, single- frequency wavelengths for use in displacement and dispersion measuring interferometry
JP3465627B2 (en) 1999-04-28 2003-11-10 株式会社村田製作所 Electronic components, dielectric resonators, dielectric filters, duplexers, communication equipment
JP3057229B1 (en) 1999-05-20 2000-06-26 金沢大学長 Electromagnetic wave amplifier and electromagnetic wave generator
JP3792126B2 (en) 1999-05-25 2006-07-05 ナヴォテック・ゲーエムベーハー Small terahertz radiation source
TW408496B (en) * 1999-06-21 2000-10-11 United Microelectronics Corp The structure of image sensor
US6384406B1 (en) * 1999-08-05 2002-05-07 Microvision, Inc. Active tuning of a torsional resonant structure
US6309528B1 (en) 1999-10-15 2001-10-30 Faraday Technology Marketing Group, Llc Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes
US6870438B1 (en) * 1999-11-10 2005-03-22 Kyocera Corporation Multi-layered wiring board for slot coupling a transmission line to a waveguide
FR2803950B1 (en) * 2000-01-14 2002-03-01 Centre Nat Rech Scient VERTICAL METAL MICROSONATOR PHOTODETECTION DEVICE AND MANUFACTURING METHOD THEREOF
DE60011031T2 (en) 2000-02-01 2005-06-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Optical column for particle beam device
US6593539B1 (en) 2000-02-25 2003-07-15 George Miley Apparatus and methods for controlling charged particles
JP3667188B2 (en) 2000-03-03 2005-07-06 キヤノン株式会社 Electron beam excitation laser device and multi-electron beam excitation laser device
JP2001273861A (en) * 2000-03-28 2001-10-05 Toshiba Corp Charged beam apparatus and pattern incline observation method
DE10019359C2 (en) 2000-04-18 2002-11-07 Nanofilm Technologie Gmbh SPR sensor
US6700748B1 (en) * 2000-04-28 2004-03-02 International Business Machines Corporation Methods for creating ground paths for ILS
US6453087B2 (en) 2000-04-28 2002-09-17 Confluent Photonics Co. Miniature monolithic optical add-drop multiplexer
US6800877B2 (en) 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6545425B2 (en) * 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US7064500B2 (en) 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6829286B1 (en) 2000-05-26 2004-12-07 Opticomp Corporation Resonant cavity enhanced VCSEL/waveguide grating coupler
US7257327B2 (en) * 2000-06-01 2007-08-14 Raytheon Company Wireless communication system with high efficiency/high power optical source
US6373194B1 (en) * 2000-06-01 2002-04-16 Raytheon Company Optical magnetron for high efficiency production of optical radiation
US6972421B2 (en) 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
JP2004503816A (en) * 2000-06-15 2004-02-05 カリフォルニア インスティテュート オブ テクノロジー Direct electro-optic conversion and light modulation in microwhispering gallery mode resonators
EP1304717A4 (en) 2000-07-27 2009-12-09 Ebara Corp Sheet beam test apparatus
US6441298B1 (en) 2000-08-15 2002-08-27 Nec Research Institute, Inc Surface-plasmon enhanced photovoltaic device
WO2002020390A2 (en) * 2000-09-08 2002-03-14 Ball Ronald H Illumination system for escalator handrails
WO2002025785A2 (en) 2000-09-22 2002-03-28 Vermont Photonics Apparatuses and methods for generating coherent electromagnetic laser radiation
JP3762208B2 (en) 2000-09-29 2006-04-05 株式会社東芝 Optical wiring board manufacturing method
IL156027A0 (en) 2000-12-01 2003-12-23 El Mul Technologies Ltd Device and method for the examination of samples in a non-vacuum environment using a scanning electron microscope
US6777244B2 (en) 2000-12-06 2004-08-17 Hrl Laboratories, Llc Compact sensor using microcavity structures
US20020071457A1 (en) 2000-12-08 2002-06-13 Hogan Josh N. Pulsed non-linear resonant cavity
KR20020061103A (en) 2001-01-12 2002-07-22 후루까와덴끼고오교 가부시끼가이샤 Antenna device and terminal with the antenna device
US6603781B1 (en) 2001-01-19 2003-08-05 Siros Technologies, Inc. Multi-wavelength transmitter
US6636653B2 (en) 2001-02-02 2003-10-21 Teravicta Technologies, Inc. Integrated optical micro-electromechanical systems and methods of fabricating and operating the same
US6603915B2 (en) 2001-02-05 2003-08-05 Fujitsu Limited Interposer and method for producing a light-guiding structure
US6636534B2 (en) 2001-02-26 2003-10-21 University Of Hawaii Phase displacement free-electron laser
JP3990983B2 (en) * 2001-02-28 2007-10-17 株式会社日立製作所 Method and apparatus for measuring physical properties of minute area
EP1307941B1 (en) 2001-03-02 2008-04-16 Matsushita Electric Industrial Co., Ltd. Dielectric filter and antenna duplexer
US6493424B2 (en) 2001-03-05 2002-12-10 Siemens Medical Solutions Usa, Inc. Multi-mode operation of a standing wave linear accelerator
SE520339C2 (en) 2001-03-07 2003-06-24 Acreo Ab Electrochemical transistor device, used for e.g. polymer batteries, includes active element having transistor channel made of organic material and gate electrode where voltage is applied to control electron flow
US7038399B2 (en) 2001-03-13 2006-05-02 Color Kinetics Incorporated Methods and apparatus for providing power to lighting devices
US6819432B2 (en) 2001-03-14 2004-11-16 Hrl Laboratories, Llc Coherent detecting receiver using a time delay interferometer and adaptive beam combiner
EP1243428A1 (en) 2001-03-20 2002-09-25 The Technology Partnership Public Limited Company Led print head for electrophotographic printer
US7077982B2 (en) 2001-03-23 2006-07-18 Fuji Photo Film Co., Ltd. Molecular electric wire, molecular electric wire circuit using the same and process for producing the molecular electric wire circuit
US6788847B2 (en) 2001-04-05 2004-09-07 Luxtera, Inc. Photonic input/output port
US6912330B2 (en) 2001-05-17 2005-06-28 Sioptical Inc. Integrated optical/electronic circuits and associated methods of simultaneous generation thereof
US7010183B2 (en) * 2002-03-20 2006-03-07 The Regents Of The University Of Colorado Surface plasmon devices
US7177515B2 (en) * 2002-03-20 2007-02-13 The Regents Of The University Of Colorado Surface plasmon devices
US6525477B2 (en) * 2001-05-29 2003-02-25 Raytheon Company Optical magnetron generator
US7068948B2 (en) 2001-06-13 2006-06-27 Gazillion Bits, Inc. Generation of optical signals with return-to-zero format
JP3698075B2 (en) 2001-06-20 2005-09-21 株式会社日立製作所 Semiconductor substrate inspection method and apparatus
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
US20030012925A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing
EP1278314B1 (en) * 2001-07-17 2007-01-10 Alcatel Monitoring unit for optical burst signals
US20030034535A1 (en) * 2001-08-15 2003-02-20 Motorola, Inc. Mems devices suitable for integration with chip having integrated silicon and compound semiconductor devices, and methods for fabricating such devices
US6990257B2 (en) 2001-09-10 2006-01-24 California Institute Of Technology Electronically biased strip loaded waveguide
US6640023B2 (en) 2001-09-27 2003-10-28 Memx, Inc. Single chip optical cross connect
JP2003209411A (en) 2001-10-30 2003-07-25 Matsushita Electric Ind Co Ltd High frequency module and production method for high frequency module
US7248297B2 (en) 2001-11-30 2007-07-24 The Board Of Trustees Of The Leland Stanford Junior University Integrated color pixel (ICP)
US20050023145A1 (en) * 2003-05-07 2005-02-03 Microfabrica Inc. Methods and apparatus for forming multi-layer structures using adhered masks
US6635949B2 (en) * 2002-01-04 2003-10-21 Intersil Americas Inc. Symmetric inducting device for an integrated circuit having a ground shield
US6828786B2 (en) 2002-01-18 2004-12-07 California Institute Of Technology Method and apparatus for nanomagnetic manipulation and sensing
US6950220B2 (en) 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US6738176B2 (en) 2002-04-30 2004-05-18 Mario Rabinowitz Dynamic multi-wavelength switching ensemble
JP2003331774A (en) 2002-05-16 2003-11-21 Toshiba Corp Electron beam equipment and device manufacturing method using the equipment
JP2004014943A (en) * 2002-06-10 2004-01-15 Sony Corp Multibeam semiconductor laser, semiconductor light emitting device, and semiconductor device
US6887773B2 (en) 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process
EP1388883B1 (en) 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
WO2004029658A1 (en) 2002-09-26 2004-04-08 Massachusetts Institute Of Technology Photonic crystals: a medium exhibiting anomalous cherenkov radiation
AU2003296909A1 (en) * 2002-09-27 2004-05-13 The Trustees Of Dartmouth College Free electron laser, and associated components and methods
US6841795B2 (en) 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US6922118B2 (en) 2002-11-01 2005-07-26 Hrl Laboratories, Llc Micro electrical mechanical system (MEMS) tuning using focused ion beams
JP2004158970A (en) * 2002-11-05 2004-06-03 Ube Ind Ltd Band filter employing thin film piezoelectric resonator
US6936981B2 (en) 2002-11-08 2005-08-30 Applied Materials, Inc. Retarding electron beams in multiple electron beam pattern generation
JP2004172965A (en) 2002-11-20 2004-06-17 Seiko Epson Corp Inter-chip optical interconnection circuit, electro-optical device and electronic appliance
US6924920B2 (en) 2003-05-29 2005-08-02 Stanislav Zhilkov Method of modulation and electron modulator for optical communication and data transmission
CN100533589C (en) * 2002-11-26 2009-08-26 株式会社东芝 Magnetic unit and memory
JP2004191392A (en) 2002-12-06 2004-07-08 Seiko Epson Corp Wavelength multiple intra-chip optical interconnection circuit, electro-optical device and electronic appliance
JP4249474B2 (en) 2002-12-06 2009-04-02 セイコーエプソン株式会社 Wavelength multiplexing chip-to-chip optical interconnection circuit
ITMI20022608A1 (en) 2002-12-09 2004-06-10 Fond Di Adroterapia Oncologic A Tera LINAC WITH DRAWING TUBES FOR THE ACCELERATION OF A BAND OF IONS.
US20040180244A1 (en) 2003-01-24 2004-09-16 Tour James Mitchell Process and apparatus for microwave desorption of elements or species from carbon nanotubes
US7157839B2 (en) 2003-01-27 2007-01-02 3M Innovative Properties Company Phosphor based light sources utilizing total internal reflection
JP4044453B2 (en) 2003-02-06 2008-02-06 株式会社東芝 Quantum memory and information processing method using quantum memory
US20040171272A1 (en) 2003-02-28 2004-09-02 Applied Materials, Inc. Method of etching metallic materials to form a tapered profile
US20040184270A1 (en) 2003-03-17 2004-09-23 Halter Michael A. LED light module with micro-reflector cavities
US7138629B2 (en) 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US6954515B2 (en) 2003-04-25 2005-10-11 Varian Medical Systems, Inc., Radiation sources and radiation scanning systems with improved uniformity of radiation intensity
US6884335B2 (en) 2003-05-20 2005-04-26 Novellus Systems, Inc. Electroplating using DC current interruption and variable rotation rate
US6943650B2 (en) 2003-05-29 2005-09-13 Freescale Semiconductor, Inc. Electromagnetic band gap microwave filter
US7446601B2 (en) 2003-06-23 2008-11-04 Astronix Research, Llc Electron beam RF amplifier and emitter
US20050194258A1 (en) 2003-06-27 2005-09-08 Microfabrica Inc. Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates
US6953291B2 (en) 2003-06-30 2005-10-11 Finisar Corporation Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
US7279686B2 (en) 2003-07-08 2007-10-09 Biomed Solutions, Llc Integrated sub-nanometer-scale electron beam systems
US7141800B2 (en) * 2003-07-11 2006-11-28 Charles E. Bryson, III Non-dispersive charged particle energy analyzer
IL157344A0 (en) 2003-08-11 2004-06-20 Opgal Ltd Internal temperature reference source and mtf inverse filter for radiometry
US20050067286A1 (en) * 2003-09-26 2005-03-31 The University Of Cincinnati Microfabricated structures and processes for manufacturing same
US7362972B2 (en) * 2003-09-29 2008-04-22 Jds Uniphase Inc. Laser transmitter capable of transmitting line data and supervisory information at a plurality of data rates
US7170142B2 (en) 2003-10-03 2007-01-30 Applied Materials, Inc. Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith
US7042982B2 (en) 2003-11-19 2006-05-09 Lucent Technologies Inc. Focusable and steerable micro-miniature x-ray apparatus
EP1723455B1 (en) 2003-12-05 2009-08-12 3M Innovative Properties Company Process for producing photonic crystals
CA2554863C (en) 2004-01-28 2012-07-10 Tir Systems Ltd. Directly viewable luminaire
EP1711737B1 (en) 2004-01-28 2013-09-18 Koninklijke Philips Electronics N.V. Sealed housing unit for lighting system
US7092603B2 (en) 2004-03-03 2006-08-15 Fujitsu Limited Optical bridge for chip-to-board interconnection and methods of fabrication
JP4370945B2 (en) 2004-03-11 2009-11-25 ソニー株式会社 Measuring method of dielectric constant
US6996303B2 (en) 2004-03-12 2006-02-07 Fujitsu Limited Flexible optical waveguides for backplane optical interconnections
US7012419B2 (en) 2004-03-26 2006-03-14 Ut-Battelle, Llc Fast Faraday cup with high bandwidth
JP4336765B2 (en) 2004-04-05 2009-09-30 日本電気株式会社 Photodiode and manufacturing method thereof
JP4257741B2 (en) 2004-04-19 2009-04-22 三菱電機株式会社 Charged particle beam accelerator, particle beam irradiation medical system using charged particle beam accelerator, and method of operating particle beam irradiation medical system
US7428322B2 (en) 2004-04-20 2008-09-23 Bio-Rad Laboratories, Inc. Imaging method and apparatus
US7454095B2 (en) 2004-04-27 2008-11-18 California Institute Of Technology Integrated plasmon and dielectric waveguides
KR100586965B1 (en) 2004-05-27 2006-06-08 삼성전기주식회사 Light emitting diode device
US7294834B2 (en) * 2004-06-16 2007-11-13 National University Of Singapore Scanning electron microscope
US7155107B2 (en) 2004-06-18 2006-12-26 Southwest Research Institute System and method for detection of fiber optic cable using static and induced charge
US7194798B2 (en) * 2004-06-30 2007-03-27 Hitachi Global Storage Technologies Netherlands B.V. Method for use in making a write coil of magnetic head
US20060062258A1 (en) * 2004-07-02 2006-03-23 Vanderbilt University Smith-Purcell free electron laser and method of operating same
US7130102B2 (en) 2004-07-19 2006-10-31 Mario Rabinowitz Dynamic reflection, illumination, and projection
US7375631B2 (en) 2004-07-26 2008-05-20 Lenovo (Singapore) Pte. Ltd. Enabling and disabling a wireless RFID portable transponder
US20060035173A1 (en) * 2004-08-13 2006-02-16 Mark Davidson Patterning thin metal films by dry reactive ion etching
US7791290B2 (en) * 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US7586097B2 (en) * 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
US7626179B2 (en) 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
KR100623477B1 (en) * 2004-08-25 2006-09-19 한국정보통신대학교 산학협력단 Optical printed circuit boards and optical interconnection blocks using optical fiber bundles
WO2006042239A2 (en) 2004-10-06 2006-04-20 The Regents Of The University Of California Cascaded cavity silicon raman laser with electrical modulation, switching, and active mode locking capability
US20060187794A1 (en) 2004-10-14 2006-08-24 Tim Harvey Uses of wave guided miniature holographic system
TWI253714B (en) 2004-12-21 2006-04-21 Phoenix Prec Technology Corp Method for fabricating a multi-layer circuit board with fine pitch
US7592255B2 (en) 2004-12-22 2009-09-22 Hewlett-Packard Development Company, L.P. Fabricating arrays of metallic nanostructures
US7508576B2 (en) 2005-01-20 2009-03-24 Intel Corporation Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon raman laser
US7466326B2 (en) 2005-01-21 2008-12-16 Konica Minolta Business Technologies, Inc. Image forming method and image forming apparatus
US7309953B2 (en) 2005-01-24 2007-12-18 Principia Lightworks, Inc. Electron beam pumped laser light source for projection television
US7397055B2 (en) * 2005-05-02 2008-07-08 Raytheon Company Smith-Purcell radiation source using negative-index metamaterial (NIM)
JP4945561B2 (en) * 2005-06-30 2012-06-06 デ,ロシェモント,エル.,ピエール Electrical component and method of manufacturing the same
EP2027594B1 (en) 2005-07-08 2011-12-14 NexGen Semi Holding, Inc. Apparatus and method for controlled particle beam manufacturing of semiconductors
US20070013765A1 (en) * 2005-07-18 2007-01-18 Eastman Kodak Company Flexible organic laser printer
US8425858B2 (en) * 2005-10-14 2013-04-23 Morpho Detection, Inc. Detection apparatus and associated method
JP4790372B2 (en) * 2005-10-20 2011-10-12 株式会社日立製作所 Computer system for distributing storage access load and control method thereof
US7473916B2 (en) * 2005-12-16 2009-01-06 Asml Netherlands B.V. Apparatus and method for detecting contamination within a lithographic apparatus
US7547904B2 (en) 2005-12-22 2009-06-16 Palo Alto Research Center Incorporated Sensing photon energies emanating from channels or moving objects
US7619373B2 (en) * 2006-01-05 2009-11-17 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US20070152781A1 (en) * 2006-01-05 2007-07-05 Virgin Islands Microsystems, Inc. Switching micro-resonant structures by modulating a beam of charged particles
US7470920B2 (en) 2006-01-05 2008-12-30 Virgin Islands Microsystems, Inc. Resonant structure-based display
US7623165B2 (en) 2006-02-28 2009-11-24 Aptina Imaging Corporation Vertical tri-color sensor
US7443358B2 (en) 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
US7862756B2 (en) 2006-03-30 2011-01-04 Asml Netherland B.V. Imprint lithography
US7646991B2 (en) 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US20070264023A1 (en) 2006-04-26 2007-11-15 Virgin Islands Microsystems, Inc. Free space interchip communications
US7511808B2 (en) 2006-04-27 2009-03-31 Hewlett-Packard Development Company, L.P. Analyte stages including tunable resonant cavities and Raman signal-enhancing structures
US7342441B2 (en) * 2006-05-05 2008-03-11 Virgin Islands Microsystems, Inc. Heterodyne receiver array using resonant structures
US7436177B2 (en) 2006-05-05 2008-10-14 Virgin Islands Microsystems, Inc. SEM test apparatus
US7442940B2 (en) 2006-05-05 2008-10-28 Virgin Island Microsystems, Inc. Focal plane array incorporating ultra-small resonant structures
US7359589B2 (en) 2006-05-05 2008-04-15 Virgin Islands Microsystems, Inc. Coupling electromagnetic wave through microcircuit
US7554083B2 (en) 2006-05-05 2009-06-30 Virgin Islands Microsystems, Inc. Integration of electromagnetic detector on integrated chip
US7586167B2 (en) 2006-05-05 2009-09-08 Virgin Islands Microsystems, Inc. Detecting plasmons using a metallurgical junction
US20070258492A1 (en) 2006-05-05 2007-11-08 Virgin Islands Microsystems, Inc. Light-emitting resonant structure driving raman laser
US7450794B2 (en) * 2006-09-19 2008-11-11 Virgin Islands Microsystems, Inc. Microcircuit using electromagnetic wave routing

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of EP2022072A4 *

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