WO2007146757A3 - Methods of forming solder connections and structure thereof - Google Patents

Methods of forming solder connections and structure thereof Download PDF

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Publication number
WO2007146757A3
WO2007146757A3 PCT/US2007/070661 US2007070661W WO2007146757A3 WO 2007146757 A3 WO2007146757 A3 WO 2007146757A3 US 2007070661 W US2007070661 W US 2007070661W WO 2007146757 A3 WO2007146757 A3 WO 2007146757A3
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WO
WIPO (PCT)
Prior art keywords
layer
resist
containing layer
opening
metal
Prior art date
Application number
PCT/US2007/070661
Other languages
French (fr)
Other versions
WO2007146757A2 (en
Inventor
Timothy H Daubenspeck
Jeffrey P Gambino
Christopher D Muzzy
Wolfgang Sauter
Original Assignee
Ibm
Timothy H Daubenspeck
Jeffrey P Gambino
Christopher D Muzzy
Wolfgang Sauter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Timothy H Daubenspeck, Jeffrey P Gambino, Christopher D Muzzy, Wolfgang Sauter filed Critical Ibm
Publication of WO2007146757A2 publication Critical patent/WO2007146757A2/en
Publication of WO2007146757A3 publication Critical patent/WO2007146757A3/en

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    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

In a first aspect, a method comprises depositing a first metal containing layer (16) into a trench structure, which contacts a metalized area (12) of a semiconductor structure (10). The method further includes patterning at least one opening in a resist to the first metal containing layer (16). The opening should be in alignment with the trench structure. At least a pad metal containing layer (20) is formed within the at least one opening (preferably by electroplating processes). The resist (18) and the first metal layer (16) underlying the resist (18) are then etched (with the second metal layer (20) acting as a mask, in embodiments). The method includes flowing solder material (22) within the trench and on pad metal containing layer (20) after the etching process. The structure is a controlled collapse chip connection (C4) structure comprising at least one electroplated metal layer formed in a resist pattern to form at least one ball limiting metallurgical layer. The structure further includes an underlying metal layer devoid of undercuts.
PCT/US2007/070661 2006-06-08 2007-06-08 Methods of forming solder connections and structure thereof WO2007146757A2 (en)

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090218688A1 (en) * 2008-02-28 2009-09-03 International Business Machines Corporation Optimized passivation slope for solder connections
US7989356B2 (en) * 2009-03-24 2011-08-02 Stats Chippac, Ltd. Semiconductor device and method of forming enhanced UBM structure for improving solder joint reliability
US8518815B2 (en) 2010-07-07 2013-08-27 Lam Research Corporation Methods, devices, and materials for metallization
US8298930B2 (en) 2010-12-03 2012-10-30 International Business Machines Corporation Undercut-repair of barrier layer metallurgy for solder bumps and methods thereof
US8765593B2 (en) 2012-08-08 2014-07-01 International Business Machines Corporation Controlled collapse chip connection (C4) structure and methods of forming
TWI690083B (en) * 2015-04-15 2020-04-01 杰力科技股份有限公司 Power mosfet and manufacturing method thereof
US10325870B2 (en) * 2017-05-09 2019-06-18 International Business Machines Corporation Through-substrate-vias with self-aligned solder bumps
US10522501B2 (en) * 2017-11-17 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of forming the same
KR20230020829A (en) * 2021-08-04 2023-02-13 삼성전자주식회사 Printed circuit board including conductive pad and electric device using the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050170647A1 (en) * 2003-04-09 2005-08-04 Halahan Patrick A. Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby
US20050208748A1 (en) * 2004-03-17 2005-09-22 International Business Machines Corporation Method for forming robust solder interconnect structures by reducing effects of seed layer underetching
US20060086718A1 (en) * 2002-11-01 2006-04-27 Techno Lab Company Soldering method and device

Family Cites Families (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937998B1 (en) * 1987-12-28 2005-08-30 Symbol Technologies, Inc. Arrangement for and method of expediting transactions based on a customer's proximity to the transactions
US6837436B2 (en) * 1996-09-05 2005-01-04 Symbol Technologies, Inc. Consumer interactive shopping system
US5907831A (en) * 1997-04-04 1999-05-25 Lotvin; Mikhail Computer apparatus and methods supporting different categories of users
US6446076B1 (en) * 1998-11-12 2002-09-03 Accenture Llp. Voice interactive web-based agent system responsive to a user location for prioritizing and formatting information
US6512919B2 (en) * 1998-12-14 2003-01-28 Fujitsu Limited Electronic shopping system utilizing a program downloadable wireless videophone
US6577861B2 (en) * 1998-12-14 2003-06-10 Fujitsu Limited Electronic shopping system utilizing a program downloadable wireless telephone
US6199099B1 (en) * 1999-03-05 2001-03-06 Ac Properties B.V. System, method and article of manufacture for a mobile communication network utilizing a distributed communication network
US6356905B1 (en) * 1999-03-05 2002-03-12 Accenture Llp System, method and article of manufacture for mobile communication utilizing an interface support framework
US6907566B1 (en) * 1999-04-02 2005-06-14 Overture Services, Inc. Method and system for optimum placement of advertisements on a webpage
US6269361B1 (en) * 1999-05-28 2001-07-31 Goto.Com System and method for influencing a position on a search result list generated by a computer network search engine
US20020087408A1 (en) * 1999-06-25 2002-07-04 Burnett Jonathan Robert System for providing information to intending consumers
US20050075932A1 (en) * 1999-07-07 2005-04-07 Mankoff Jeffrey W. Delivery, organization, and redemption of virtual offers from the internet, interactive-tv, wireless devices and other electronic means
US20020052781A1 (en) * 1999-09-10 2002-05-02 Avantgo, Inc. Interactive advertisement mechanism on a mobile device
US6704727B1 (en) * 2000-01-31 2004-03-09 Overture Services, Inc. Method and system for generating a set of search terms
US6775831B1 (en) * 2000-02-11 2004-08-10 Overture Services, Inc. System and method for rapid completion of data processing tasks distributed on a network
US7136860B2 (en) * 2000-02-14 2006-11-14 Overture Services, Inc. System and method to determine the validity of an interaction on a network
KR20010007743A (en) * 2000-07-27 2001-02-05 이승열 WAP connecting method using guidecode inserted an advertisement
WO2002015086A1 (en) * 2000-08-11 2002-02-21 Tvx Internet Services, Inc. Integrated system for differentiation and positioning of a commercial offering
US7536639B2 (en) * 2000-08-16 2009-05-19 Verisign, Inc. Numeric/voice name Internet access architecture and methodology
US6701317B1 (en) * 2000-09-19 2004-03-02 Overture Services, Inc. Web page connectivity server construction
US20030079222A1 (en) * 2000-10-06 2003-04-24 Boykin Patrick Oscar System and method for distributing perceptually encrypted encoded files of music and movies
US20030158776A1 (en) * 2000-10-30 2003-08-21 Mark Landesmann Buyer-driven targeting of purchasing entities
JP4095243B2 (en) * 2000-11-28 2008-06-04 キヤノン株式会社 A storage medium storing a URL acquisition and processing system and method and a program for executing the method.
US20050086112A1 (en) * 2000-11-28 2005-04-21 Roy Shkedi Super-saturation method for information-media
US20050171863A1 (en) * 2000-12-15 2005-08-04 Hagen Philip A. System and computerized method for classified ads
US7085555B2 (en) * 2000-12-19 2006-08-01 Bellsouth Intellectual Property Corporation Location blocking service from a web advertiser
US7027987B1 (en) * 2001-02-07 2006-04-11 Google Inc. Voice interface for a search engine
US6778834B2 (en) * 2001-02-27 2004-08-17 Nokia Corporation Push content filtering
US6778975B1 (en) * 2001-03-05 2004-08-17 Overture Services, Inc. Search engine for selecting targeted messages
US6548347B2 (en) * 2001-04-12 2003-04-15 Micron Technology, Inc. Method of forming minimally spaced word lines
US6728731B2 (en) * 2001-05-15 2004-04-27 Yahoo!, Inc. Method and apparatus for accessing targeted, personalized voice/audio web content through wireless devices
US6759319B2 (en) * 2001-05-17 2004-07-06 Institute Of Microelectronics Residue-free solder bumping process
US6853076B2 (en) * 2001-09-21 2005-02-08 Intel Corporation Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
US6996579B2 (en) * 2001-11-02 2006-02-07 At&T Corp. E-coupon service for location-aware mobile commerce which determines whether to supply requested e-coupons based on the number of requests received in a processing cycle, and a threshold number of requests required to make expected returns from redeemed coupons greater than advertising fees
US20030126095A1 (en) * 2001-12-28 2003-07-03 Docomo Communications Laboratories Usa, Inc. Context-aware market-making service
US6696356B2 (en) * 2001-12-31 2004-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making a bump on a substrate without ribbon residue
US6743660B2 (en) * 2002-01-12 2004-06-01 Taiwan Semiconductor Manufacturing Co., Ltd Method of making a wafer level chip scale package
US20030135581A1 (en) * 2002-01-15 2003-07-17 Jeffrey Phelan Method and apparatus for distributing information based on a geographic location determined for the information
US7716161B2 (en) * 2002-09-24 2010-05-11 Google, Inc, Methods and apparatus for serving relevant advertisements
US8560493B2 (en) * 2003-10-01 2013-10-15 Google Inc. Determining and/or using end user local time information in an ad system
US6930032B2 (en) * 2002-05-14 2005-08-16 Freescale Semiconductor, Inc. Under bump metallurgy structural design for high reliability bumped packages
US7930215B2 (en) * 2002-07-31 2011-04-19 Truecontext Corporation Contextual computing system
US7200413B2 (en) * 2002-07-31 2007-04-03 Interchange Corporation Methods and system for enhanced directory assistance using wireless messaging protocols
US6780751B2 (en) * 2002-10-09 2004-08-24 Freescale Semiconductor, Inc. Method for eliminating voiding in plated solder
US6750133B2 (en) * 2002-10-24 2004-06-15 Intel Corporation Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7356332B2 (en) * 2003-06-09 2008-04-08 Microsoft Corporation Mobile information system for presenting information to mobile devices
US20050149399A1 (en) * 2003-12-18 2005-07-07 Fuji Photo Film Co., Ltd. Service server and service method
US7410833B2 (en) 2004-03-31 2008-08-12 International Business Machines Corporation Interconnections for flip-chip using lead-free solders and having reaction barrier layers
US20060004627A1 (en) * 2004-06-30 2006-01-05 Shumeet Baluja Advertisements for devices with call functionality, such as mobile phones
US20060036565A1 (en) * 2004-08-10 2006-02-16 Carl Bruecken Passive monitoring of user interaction with a browser application
US20060155597A1 (en) * 2005-01-10 2006-07-13 Gleason David M Method, system and apparatus for location based advertising
US7672931B2 (en) * 2005-06-30 2010-03-02 Microsoft Corporation Searching for content using voice search queries
US8166010B2 (en) * 2005-07-26 2012-04-24 Taptu Limited Processing and sending search results over a wireless network to a mobile device
US8295851B2 (en) * 2005-08-03 2012-10-23 Michael Edward Finnegan Realtime, interactive and geographically defined computerized personal matching systems and methods
US8073700B2 (en) * 2005-09-12 2011-12-06 Nuance Communications, Inc. Retrieval and presentation of network service results for mobile device using a multimodal browser
US7676394B2 (en) * 2005-09-14 2010-03-09 Jumptap, Inc. Dynamic bidding and expected value
US20070061211A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Preventing mobile communication facility click fraud
US8688671B2 (en) * 2005-09-14 2014-04-01 Millennial Media Managing sponsored content based on geographic region
US8364521B2 (en) * 2005-09-14 2013-01-29 Jumptap, Inc. Rendering targeted advertisement on mobile communication facilities
US20070168354A1 (en) * 2005-11-01 2007-07-19 Jorey Ramer Combined algorithmic and editorial-reviewed mobile content search results
US20070073717A1 (en) * 2005-09-14 2007-03-29 Jorey Ramer Mobile comparison shopping
US20070100806A1 (en) * 2005-11-01 2007-05-03 Jorey Ramer Client libraries for mobile content
US20070198485A1 (en) * 2005-09-14 2007-08-23 Jorey Ramer Mobile search service discovery
US20070061335A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Multimodal search query processing
US7752209B2 (en) * 2005-09-14 2010-07-06 Jumptap, Inc. Presenting sponsored content on a mobile communication facility
US20070100651A1 (en) * 2005-11-01 2007-05-03 Jorey Ramer Mobile payment facilitation
US7860871B2 (en) * 2005-09-14 2010-12-28 Jumptap, Inc. User history influenced search results
US20070061303A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Mobile search result clustering
US20070073719A1 (en) * 2005-09-14 2007-03-29 Jorey Ramer Physical navigation of a mobile search application
US20080009268A1 (en) * 2005-09-14 2008-01-10 Jorey Ramer Authorized mobile content search results
US20070061242A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Implicit searching for mobile content
US20070118533A1 (en) * 2005-09-14 2007-05-24 Jorey Ramer On-off handset search box
US20070061198A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Mobile pay-per-call campaign creation
US20070061247A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Expected value and prioritization of mobile content
US20070061334A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Search query address redirection on a mobile communication facility
US8103545B2 (en) * 2005-09-14 2012-01-24 Jumptap, Inc. Managing payment for sponsored content presented to mobile communication facilities
US20070061246A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Mobile campaign creation
US20070100650A1 (en) * 2005-09-14 2007-05-03 Jorey Ramer Action functionality for mobile content search results
US7603360B2 (en) * 2005-09-14 2009-10-13 Jumptap, Inc. Location influenced search results
US20070060173A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Managing sponsored content based on transaction history
US7702318B2 (en) * 2005-09-14 2010-04-20 Jumptap, Inc. Presentation of sponsored content based on mobile transaction event
US8229914B2 (en) * 2005-09-14 2012-07-24 Jumptap, Inc. Mobile content spidering and compatibility determination
US20070073718A1 (en) * 2005-09-14 2007-03-29 Jorey Ramer Mobile search service instant activation
US8832100B2 (en) * 2005-09-14 2014-09-09 Millennial Media, Inc. User transaction history influenced search results
US7769764B2 (en) * 2005-09-14 2010-08-03 Jumptap, Inc. Mobile advertisement syndication
US9471925B2 (en) * 2005-09-14 2016-10-18 Millennial Media Llc Increasing mobile interactivity
US7548915B2 (en) * 2005-09-14 2009-06-16 Jorey Ramer Contextual mobile content placement on a mobile communication facility
US20070192318A1 (en) * 2005-09-14 2007-08-16 Jorey Ramer Creation of a mobile search suggestion dictionary
US9076175B2 (en) * 2005-09-14 2015-07-07 Millennial Media, Inc. Mobile comparison shopping
US20070073722A1 (en) * 2005-09-14 2007-03-29 Jorey Ramer Calculation and presentation of mobile content expected value
US20070100653A1 (en) * 2005-11-01 2007-05-03 Jorey Ramer Mobile website analyzer
US20070100652A1 (en) * 2005-11-01 2007-05-03 Jorey Ramer Mobile pay per call
US20070061245A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Location based presentation of mobile content
US8615719B2 (en) * 2005-09-14 2013-12-24 Jumptap, Inc. Managing sponsored content for delivery to mobile communication facilities
US20070061317A1 (en) * 2005-09-14 2007-03-15 Jorey Ramer Mobile search substring query completion
US20070100805A1 (en) * 2005-09-14 2007-05-03 Jorey Ramer Mobile content cross-inventory yield optimization
US7577665B2 (en) * 2005-09-14 2009-08-18 Jumptap, Inc. User characteristic influenced search results
US7945943B2 (en) * 2005-09-19 2011-05-17 Silverbrook Research Pty Ltd Retrieving an access token via a coded surface
US7112522B1 (en) * 2005-11-08 2006-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method to increase bump height and achieve robust bump structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060086718A1 (en) * 2002-11-01 2006-04-27 Techno Lab Company Soldering method and device
US20050170647A1 (en) * 2003-04-09 2005-08-04 Halahan Patrick A. Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby
US20050208748A1 (en) * 2004-03-17 2005-09-22 International Business Machines Corporation Method for forming robust solder interconnect structures by reducing effects of seed layer underetching

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US7682961B2 (en) 2010-03-23
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US8164188B2 (en) 2012-04-24
CN101454885A (en) 2009-06-10

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