WO2007149727A3 - Method and apparatus for extracting ions from an ion source for use in ion implantation - Google Patents
Method and apparatus for extracting ions from an ion source for use in ion implantation Download PDFInfo
- Publication number
- WO2007149727A3 WO2007149727A3 PCT/US2007/070929 US2007070929W WO2007149727A3 WO 2007149727 A3 WO2007149727 A3 WO 2007149727A3 US 2007070929 W US2007070929 W US 2007070929W WO 2007149727 A3 WO2007149727 A3 WO 2007149727A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ion
- extraction electrode
- ion source
- ions
- hot
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
- H01J27/024—Extraction optics, e.g. grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/38—Exhausting, degassing, filling, or cleaning vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/01—Generalised techniques
- H01J2209/017—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0812—Ionized cluster beam [ICB] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07798405A EP2027601A4 (en) | 2006-06-12 | 2007-06-12 | Method and apparatus for extracting ions from an ion source for use in ion implantation |
JP2009515597A JP2009540534A (en) | 2006-06-12 | 2007-06-12 | Method and apparatus for extracting ions from an ion source for use in ion implantation |
CN2007800165341A CN101512716B (en) | 2006-06-12 | 2007-06-12 | Method and apparatus for extracting ions from an ion source for use in ion implantation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/452,003 US7791047B2 (en) | 2003-12-12 | 2006-06-12 | Method and apparatus for extracting ions from an ion source for use in ion implantation |
US11/452,003 | 2006-06-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007149727A2 WO2007149727A2 (en) | 2007-12-27 |
WO2007149727A3 true WO2007149727A3 (en) | 2008-11-27 |
Family
ID=38834246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/070929 WO2007149727A2 (en) | 2006-06-12 | 2007-06-12 | Method and apparatus for extracting ions from an ion source for use in ion implantation |
Country Status (6)
Country | Link |
---|---|
US (4) | US7791047B2 (en) |
EP (1) | EP2027601A4 (en) |
JP (2) | JP2009540534A (en) |
KR (1) | KR20090023380A (en) |
CN (1) | CN101512716B (en) |
WO (1) | WO2007149727A2 (en) |
Families Citing this family (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6686595B2 (en) | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
US6995079B2 (en) * | 2003-08-29 | 2006-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Ion implantation method and method for manufacturing semiconductor device |
EP1683163B1 (en) | 2003-10-17 | 2012-02-22 | Fei Company | Charged particle extraction device and method |
US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
WO2005059942A2 (en) * | 2003-12-12 | 2005-06-30 | Semequip, Inc. | Method and apparatus for extending equipment uptime in ion implantation |
US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
US7241361B2 (en) | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
GB2415047B (en) * | 2004-06-09 | 2008-01-02 | Schlumberger Holdings | Electro-chemical sensor |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
US8143604B2 (en) * | 2006-03-31 | 2012-03-27 | Varian Semiconductor Equipment Associates, Inc. | Insulator system for a terminal structure of an ion implantation system |
KR101467585B1 (en) * | 2006-04-26 | 2014-12-01 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Cleaning of semiconductor processing systems |
US7435971B2 (en) * | 2006-05-19 | 2008-10-14 | Axcelis Technologies, Inc. | Ion source |
EP2026889A4 (en) * | 2006-06-12 | 2011-09-07 | Semequip Inc | Vapor delivery to devices under vacuum |
US7589333B2 (en) * | 2006-09-29 | 2009-09-15 | Axcelis Technologies, Inc. | Methods for rapidly switching off an ion beam |
US8803110B2 (en) * | 2006-09-29 | 2014-08-12 | Axcelis Technologies, Inc. | Methods for beam current modulation by ion source parameter modulation |
WO2008070453A2 (en) * | 2006-11-22 | 2008-06-12 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
US20080142039A1 (en) * | 2006-12-13 | 2008-06-19 | Advanced Technology Materials, Inc. | Removal of nitride deposits |
US7842934B2 (en) * | 2007-08-27 | 2010-11-30 | Varian Semiconductor Equipment Associates, Inc. | Terminal structures of an ion implanter having insulated conductors with dielectric fins |
WO2009039382A1 (en) | 2007-09-21 | 2009-03-26 | Semequip. Inc. | Method for extending equipment uptime in ion implantation |
US7700925B2 (en) * | 2007-12-28 | 2010-04-20 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a multimode ion source |
TWI413149B (en) * | 2008-01-22 | 2013-10-21 | Semequip Inc | Ion source gas reactor and method for converting a gaseous feed materital into a different molecular or atomic species |
TWI619153B (en) | 2008-02-11 | 2018-03-21 | 恩特葛瑞斯股份有限公司 | Ion source cleaning in semiconductor processing systems |
JP5212465B2 (en) * | 2008-03-31 | 2013-06-19 | 富士通セミコンダクター株式会社 | Semiconductor device manufacturing method, ion beam adjusting method, and ion implantation apparatus |
JP4428467B1 (en) * | 2008-08-27 | 2010-03-10 | 日新イオン機器株式会社 | Ion source |
EP3517921B1 (en) * | 2008-09-19 | 2020-11-04 | MKS Instruments, Inc. | Ionization gauge with emission current and bias potential control |
US7842931B2 (en) * | 2008-09-25 | 2010-11-30 | Axcelis Technologies, Inc. | Extraction electrode manipulator |
JP5390330B2 (en) * | 2008-10-16 | 2014-01-15 | キヤノンアネルバ株式会社 | Substrate processing apparatus and cleaning method thereof |
US20100112191A1 (en) * | 2008-10-30 | 2010-05-06 | Micron Technology, Inc. | Systems and associated methods for depositing materials |
US8501624B2 (en) * | 2008-12-04 | 2013-08-06 | Varian Semiconductor Equipment Associates, Inc. | Excited gas injection for ion implant control |
US8263944B2 (en) * | 2008-12-22 | 2012-09-11 | Varian Semiconductor Equipment Associates, Inc. | Directional gas injection for an ion source cathode assembly |
US8003959B2 (en) * | 2009-06-26 | 2011-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ion source cleaning end point detection |
KR101084275B1 (en) * | 2009-09-22 | 2011-11-16 | 삼성모바일디스플레이주식회사 | Source gas supplying unit, deposition device having the same and method thereof |
US9627180B2 (en) * | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
US20110108058A1 (en) * | 2009-11-11 | 2011-05-12 | Axcelis Technologies, Inc. | Method and apparatus for cleaning residue from an ion source component |
EP2341525B1 (en) | 2009-12-30 | 2013-10-23 | FEI Company | Plasma source for charged particle beam system |
US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
US8455839B2 (en) * | 2010-03-10 | 2013-06-04 | Varian Semiconductor Equipment Associates, Inc. | Cleaning of an extraction aperture of an ion source |
US8071956B2 (en) * | 2010-03-10 | 2011-12-06 | Varian Semiconductor Equipment Associates, Inc. | Cleaning of an extraction aperture of an ion source |
US20110320030A1 (en) * | 2010-06-25 | 2011-12-29 | Varian Semiconductor Equipment Associates, Inc. | Thermal Control of a Proximity Mask and Wafer During Ion Implantation |
WO2012037007A2 (en) * | 2010-09-15 | 2012-03-22 | Praxair Technology, Inc. | Method for extending lifetime of an ion source |
WO2012122036A2 (en) * | 2011-03-04 | 2012-09-13 | Perkinelmer Health Sciences, Inc. | Electrostatic lenses and systems including the same |
RU2461665C1 (en) * | 2011-08-12 | 2012-09-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" | Method of producing doped quartz glass with tetrahedral coordination of titanium atoms |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
US20130250293A1 (en) * | 2012-03-20 | 2013-09-26 | Fei Company | Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer |
US8513619B1 (en) * | 2012-05-10 | 2013-08-20 | Kla-Tencor Corporation | Non-planar extractor structure for electron source |
US10586625B2 (en) * | 2012-05-14 | 2020-03-10 | Asml Netherlands B.V. | Vacuum chamber arrangement for charged particle beam generator |
US9530615B2 (en) | 2012-08-07 | 2016-12-27 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source |
US9484176B2 (en) * | 2012-09-10 | 2016-11-01 | Thomas Schenkel | Advanced penning ion source |
US8916056B2 (en) * | 2012-10-11 | 2014-12-23 | Varian Semiconductor Equipment Associates, Inc. | Biasing system for a plasma processing apparatus |
US9443700B2 (en) * | 2013-03-12 | 2016-09-13 | Applied Materials, Inc. | Electron beam plasma source with segmented suppression electrode for uniform plasma generation |
US9865422B2 (en) | 2013-03-15 | 2018-01-09 | Nissin Ion Equipment Co., Ltd. | Plasma generator with at least one non-metallic component |
US9275819B2 (en) * | 2013-03-15 | 2016-03-01 | Nissin Ion Equipment Co., Ltd. | Magnetic field sources for an ion source |
US8994272B2 (en) | 2013-03-15 | 2015-03-31 | Nissin Ion Equipment Co., Ltd. | Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof |
US9187832B2 (en) * | 2013-05-03 | 2015-11-17 | Varian Semiconductor Equipment Associates, Inc. | Extended lifetime ion source |
DE112014002868B4 (en) * | 2013-07-29 | 2019-02-28 | Hitachi High-Technologies Corporation | ion etching apparatus and processing method using the ion etching apparatus |
US10269537B2 (en) * | 2013-12-16 | 2019-04-23 | Varian Semiconductor Equipment Associates, Inc. | Vacuum assembly for an ion implanter system |
US9570271B2 (en) * | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
US9793094B2 (en) * | 2014-03-24 | 2017-10-17 | Ion Technology Solutions, Llc | Extraction electrode |
KR101458341B1 (en) | 2014-04-18 | 2014-11-04 | 한국기계연구원 | Cathode of ion beam source |
US9214318B1 (en) | 2014-07-25 | 2015-12-15 | International Business Machines Corporation | Electromagnetic electron reflector |
JP6306797B2 (en) | 2014-07-30 | 2018-04-04 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | Ion writing unit with heating function |
TWI674614B (en) * | 2014-10-27 | 2019-10-11 | 美商恩特葛瑞斯股份有限公司 | Ion implantation methods and apparatus |
GB2537361B (en) * | 2015-04-10 | 2017-05-03 | Ion Science Ltd | A Water Immersible Detector |
JP6184441B2 (en) * | 2015-06-01 | 2017-08-23 | キヤノンアネルバ株式会社 | Ion beam etching apparatus and ion beam generating apparatus |
US10522330B2 (en) * | 2015-06-12 | 2019-12-31 | Varian Semiconductor Equipment Associates, Inc. | In-situ plasma cleaning of process chamber components |
CN106179155B (en) * | 2016-09-07 | 2017-11-10 | 厦门大学 | Plasma liquefying plant |
US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
US9916966B1 (en) * | 2017-01-26 | 2018-03-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for minimizing thermal distortion in electrodes used with ion sources |
US10256003B2 (en) * | 2017-01-31 | 2019-04-09 | Plansee Japan Ltd. | Blind-vented electrode |
JP6375470B1 (en) * | 2017-04-06 | 2018-08-15 | 株式会社アルバック | Ion source and ion implantation apparatus |
FR3070791B1 (en) * | 2017-09-05 | 2023-04-14 | Centre Nat Rech Scient | NANOWIRE ION BEAM GENERATOR |
TWI795448B (en) * | 2017-10-09 | 2023-03-11 | 美商艾克塞利斯科技公司 | Ion implantation systems and methods for stabilizing or removing films formed on beamline components in aef regions |
US20190105748A1 (en) * | 2017-10-11 | 2019-04-11 | Samsung Electronics Co., Ltd. | Seal-less airlock wafer stage |
RU179352U1 (en) * | 2017-10-24 | 2018-05-11 | Федеральное государственное бюджетное учреждение "Институт теоретической и экспериментальной физики имени А.И. Алиханова Национального исследовательского центра "Курчатовский институт" | TWO-STAGE SOURCE OF MULTI-CHARGED IONS WITH ELECTRON CYCLOTRON RESONANCE |
US10535499B2 (en) * | 2017-11-03 | 2020-01-14 | Varian Semiconductor Equipment Associates, Inc. | Varied component density for thermal isolation |
US10847339B2 (en) * | 2018-01-22 | 2020-11-24 | Axcelis Technologies, Inc. | Hydrogen generator for an ion implanter |
US10714301B1 (en) | 2018-02-21 | 2020-07-14 | Varian Semiconductor Equipment Associates, Inc. | Conductive beam optics for reducing particles in ion implanter |
US10504682B2 (en) | 2018-02-21 | 2019-12-10 | Varian Semiconductor Equipment Associates, Inc. | Conductive beam optic containing internal heating element |
US11062873B2 (en) * | 2018-05-11 | 2021-07-13 | Axcelis Technologies, Inc. | Hydrogen bleed gas for an ion source housing |
CN108636310A (en) * | 2018-05-31 | 2018-10-12 | 厦门大学 | Plasma electrolysis liquefying plant |
MX2021003904A (en) | 2018-10-05 | 2021-10-26 | Annapurna Bio Inc | Compounds and compositions for treating conditions associated with apj receptor activity. |
WO2020123901A1 (en) * | 2018-12-15 | 2020-06-18 | Entegris, Inc. | Fluorine ion implantation system with non-tungsten materials and methods of using |
US11600473B2 (en) * | 2019-03-13 | 2023-03-07 | Applied Materials, Inc. | Ion source with biased extraction plate |
RU2726187C1 (en) * | 2019-11-28 | 2020-07-09 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "СТАНКИН") | Apparatus for treating articles with fast atoms |
EP4260360A1 (en) * | 2020-12-08 | 2023-10-18 | SHINE Technologies, LLC | Isothermal ion source with auxiliary heaters |
RU2752877C1 (en) * | 2020-12-11 | 2021-08-11 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") | Device for processing dielectric products with fast atoms |
US20220316045A1 (en) * | 2021-03-31 | 2022-10-06 | Kla Corporation | System and method for ion-assisted deposition of optical coatings |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US6358766B1 (en) * | 1999-06-22 | 2002-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
WO2005059942A2 (en) * | 2003-12-12 | 2005-06-30 | Semequip, Inc. | Method and apparatus for extending equipment uptime in ion implantation |
US7022999B2 (en) * | 1999-12-13 | 2006-04-04 | Semequip Inc. | Ion implantation ion source, system and method |
US20060097185A1 (en) * | 2004-10-25 | 2006-05-11 | Epion Corporation | Ionizer and method for gas-cluster ion-beam formation |
Family Cites Families (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017403A (en) | 1974-07-31 | 1977-04-12 | United Kingdom Atomic Energy Authority | Ion beam separators |
US3955118A (en) * | 1975-02-19 | 1976-05-04 | Western Electric Company, Inc. | Cold-cathode ion source |
JPS5814017B2 (en) | 1978-04-05 | 1983-03-17 | 株式会社日立製作所 | Directly heated cathode for electron tubes |
JPS54144170A (en) | 1978-05-02 | 1979-11-10 | Hitachi Ltd | Cathode constituent of direct heating type |
US4636681A (en) | 1978-07-27 | 1987-01-13 | Hitachi, Ltd. | Directly heated cathode |
JPS5596531A (en) | 1979-01-19 | 1980-07-22 | Hitachi Ltd | Directly heated cathode for electron tube |
JPS55102146A (en) | 1979-01-31 | 1980-08-05 | Toshiba Corp | Directly-heated cathode structure |
US4258266A (en) | 1979-07-30 | 1981-03-24 | Hughes Aircraft Company | Ion implantation system |
US4412900A (en) | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
FR2532468A1 (en) | 1982-08-31 | 1984-03-02 | Thomson Csf | IMPROVEMENT TO CATHODES WITH DIRECT HEATING |
DE3376921D1 (en) * | 1982-09-10 | 1988-07-07 | Nippon Telegraph & Telephone | Ion shower apparatus |
US4697069A (en) * | 1983-08-22 | 1987-09-29 | Ingo Bleckmann | Tubular heater with an overload safety means |
JPH0616384B2 (en) * | 1984-06-11 | 1994-03-02 | 日本電信電話株式会社 | Microwave ion source |
GB8611967D0 (en) | 1986-05-16 | 1986-10-29 | English Electric Valve Co Ltd | Directly heated cathodes |
JP2517955B2 (en) * | 1987-04-11 | 1996-07-24 | 日新電機株式会社 | Ion source |
JPH01227325A (en) | 1988-03-07 | 1989-09-11 | Hitachi Ltd | Indirect cathode heater |
JP2729627B2 (en) * | 1988-03-29 | 1998-03-18 | 日本真空技術株式会社 | Ion source |
JPH02162638A (en) * | 1988-12-16 | 1990-06-22 | Hitachi Ltd | Heating ion source electrode |
US5057736A (en) | 1989-04-07 | 1991-10-15 | Nec Corporation | Directly-heated cathode structure |
US5055743A (en) | 1989-05-02 | 1991-10-08 | Spectra Physics, Inc. | Induction heated cathode |
EP0405855A3 (en) | 1989-06-30 | 1991-10-16 | Hitachi, Ltd. | Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus |
KR910005845Y1 (en) | 1989-07-10 | 1991-08-05 | 삼성전관 주식회사 | Manufacturing and cutting equipment of a filament for crt |
JP3120595B2 (en) * | 1992-10-07 | 2000-12-25 | 石川島播磨重工業株式会社 | Ion beam extraction device |
JPH0648159U (en) * | 1992-12-03 | 1994-06-28 | 日新電機株式会社 | Ion beam generator |
US5825035A (en) | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
US5831379A (en) | 1994-01-28 | 1998-11-03 | Samsung Display Devices Co., Ltd. | Directly heated cathode structure |
US5517084A (en) | 1994-07-26 | 1996-05-14 | The Regents, University Of California | Selective ion source |
US5466941A (en) * | 1994-07-27 | 1995-11-14 | Kim; Seong I. | Negative ion sputtering beam source |
US5489550A (en) | 1994-08-09 | 1996-02-06 | Texas Instruments Incorporated | Gas-phase doping method using germanium-containing additive |
US5497006A (en) | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
JP3609131B2 (en) * | 1994-12-06 | 2005-01-12 | 株式会社半導体エネルギー研究所 | Cleaning method of ion doping apparatus |
JPH08222119A (en) | 1994-12-07 | 1996-08-30 | Samsung Display Devices Co Ltd | Direct heated cathode structure |
KR0161381B1 (en) | 1994-12-28 | 1998-12-01 | 윤종용 | Straight line type cathode structure |
KR0141174B1 (en) | 1994-12-28 | 1998-06-15 | 윤종용 | Signal improvement apparatus of instantaneous tube |
KR100195167B1 (en) | 1994-12-29 | 1999-06-15 | 손욱 | Cathode heated directly and the manufacturing method thereof |
JP3060876B2 (en) | 1995-02-15 | 2000-07-10 | 日新電機株式会社 | Metal ion implanter |
US5968845A (en) * | 1996-02-13 | 1999-10-19 | Matsushita Electric Industrial Co., Ltd. | Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same |
US5993766A (en) | 1996-05-20 | 1999-11-30 | Advanced Technology Materials, Inc. | Gas source and dispensing system |
KR100382062B1 (en) | 1996-05-22 | 2003-09-19 | 삼성에스디아이 주식회사 | Serial type cathode structure |
US5703372A (en) | 1996-10-30 | 1997-12-30 | Eaton Corporation | Endcap for indirectly heated cathode of ion source |
JP3749924B2 (en) | 1996-12-03 | 2006-03-01 | 富士通株式会社 | Ion implantation method and semiconductor device manufacturing method |
JPH11145215A (en) | 1997-11-11 | 1999-05-28 | Mitsubishi Electric Corp | Tester for semiconductor and controlling method therefor |
JPH11185649A (en) | 1997-12-22 | 1999-07-09 | Hitachi Ltd | Indirectly heated cathode body structure of cathode-ray tube |
US6107634A (en) | 1998-04-30 | 2000-08-22 | Eaton Corporation | Decaborane vaporizer |
US6259210B1 (en) | 1998-07-14 | 2001-07-10 | Applied Materials, Inc. | Power control apparatus for an ION source having an indirectly heated cathode |
JP3419331B2 (en) * | 1998-08-06 | 2003-06-23 | リードライト・エスエムアイ株式会社 | Ion milling apparatus, ion milling method, ion beam irradiation apparatus, and ion beam irradiation method |
US6094012A (en) * | 1998-11-06 | 2000-07-25 | The Regents Of The University Of California | Low energy spread ion source with a coaxial magnetic filter |
GB2347786B (en) | 1999-02-22 | 2002-02-13 | Toshiba Kk | Ion implantation method |
US6570172B2 (en) * | 1999-05-12 | 2003-05-27 | Plasmion Corporation | Magnetron negative ion sputter source |
JP3773398B2 (en) | 1999-07-08 | 2006-05-10 | 日本電子株式会社 | Focused ion beam device |
US6288403B1 (en) | 1999-10-11 | 2001-09-11 | Axcelis Technologies, Inc. | Decaborane ionizer |
US6302966B1 (en) | 1999-11-15 | 2001-10-16 | Lam Research Corporation | Temperature control system for plasma processing apparatus |
US6486069B1 (en) * | 1999-12-03 | 2002-11-26 | Tegal Corporation | Cobalt silicide etch process and apparatus |
US20070107841A1 (en) | 2000-12-13 | 2007-05-17 | Semequip, Inc. | Ion implantation ion source, system and method |
US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
US7838842B2 (en) | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
JP2001195997A (en) | 2000-01-11 | 2001-07-19 | Hitachi Ltd | Cathode ray tube |
DE10014311C2 (en) | 2000-03-23 | 2003-08-14 | Siemens Ag | radiation converter |
US7276847B2 (en) | 2000-05-17 | 2007-10-02 | Varian Semiconductor Equipment Associates, Inc. | Cathode assembly for indirectly heated cathode ion source |
US6777686B2 (en) | 2000-05-17 | 2004-08-17 | Varian Semiconductor Equipment Associates, Inc. | Control system for indirectly heated cathode ion source |
US7218047B2 (en) | 2000-12-13 | 2007-05-15 | Hamamatsu Photonics K. K. | Indirectly heated electrode for gas discharge tube |
US6479828B2 (en) * | 2000-12-15 | 2002-11-12 | Axcelis Tech Inc | Method and system for icosaborane implantation |
JPWO2002051039A1 (en) * | 2000-12-21 | 2004-04-22 | 松下電器産業株式会社 | Wireless system, wireless device, wireless connection method, program, and medium |
JP2004519077A (en) | 2001-02-08 | 2004-06-24 | イメージング アンド センシング テクノロジー コーポレーション | Gas-filled arc discharge lamp and method of manufacturing the same |
KR20020068644A (en) | 2001-02-21 | 2002-08-28 | 삼성에스디아이 주식회사 | Metal cathode and indirectly heated cathode assembly having the same |
US6670623B2 (en) * | 2001-03-07 | 2003-12-30 | Advanced Technology Materials, Inc. | Thermal regulation of an ion implantation system |
US20030030010A1 (en) | 2001-08-07 | 2003-02-13 | Perel Alexander S. | Decaborane vaporizer having improved vapor flow |
US20030111014A1 (en) | 2001-12-18 | 2003-06-19 | Donatucci Matthew B. | Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds |
GB0131097D0 (en) | 2001-12-31 | 2002-02-13 | Applied Materials Inc | Ion sources |
US6942929B2 (en) * | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
US7084407B2 (en) | 2002-02-13 | 2006-08-01 | The Regents Of The University Of California | Ion beam extractor with counterbore |
JP3713683B2 (en) | 2002-03-05 | 2005-11-09 | 住友イートンノバ株式会社 | Ion beam mass separation filter, mass separation method thereof, and ion source using the same |
CN102034665B (en) | 2002-06-26 | 2014-06-25 | 山米奎普公司 | An ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
US6686595B2 (en) | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
US20050242293A1 (en) * | 2003-01-07 | 2005-11-03 | Benveniste Victor M | Mounting mechanism for plasma extraction aperture |
US7791047B2 (en) | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
US20080223409A1 (en) | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
US20070278417A1 (en) | 2005-07-01 | 2007-12-06 | Horsky Thomas N | Ion implantation ion source, system and method |
JP4099181B2 (en) * | 2005-07-11 | 2008-06-11 | Tdk株式会社 | Ion beam etching method and ion beam etching apparatus |
US8368052B2 (en) | 2009-12-23 | 2013-02-05 | Intel Corporation | Techniques for forming contacts to quantum well transistors |
-
2006
- 2006-06-12 US US11/452,003 patent/US7791047B2/en not_active Expired - Fee Related
- 2006-08-11 US US11/502,695 patent/US20060272776A1/en not_active Abandoned
- 2006-12-29 US US11/647,719 patent/US20070108395A1/en not_active Abandoned
- 2006-12-29 US US11/648,269 patent/US8368309B2/en not_active Expired - Fee Related
-
2007
- 2007-06-12 KR KR1020087030367A patent/KR20090023380A/en not_active Application Discontinuation
- 2007-06-12 JP JP2009515597A patent/JP2009540534A/en active Pending
- 2007-06-12 WO PCT/US2007/070929 patent/WO2007149727A2/en active Application Filing
- 2007-06-12 EP EP07798405A patent/EP2027601A4/en not_active Withdrawn
- 2007-06-12 CN CN2007800165341A patent/CN101512716B/en not_active Expired - Fee Related
-
2013
- 2013-11-05 JP JP2013229239A patent/JP2014053319A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US6358766B1 (en) * | 1999-06-22 | 2002-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
US7022999B2 (en) * | 1999-12-13 | 2006-04-04 | Semequip Inc. | Ion implantation ion source, system and method |
WO2005059942A2 (en) * | 2003-12-12 | 2005-06-30 | Semequip, Inc. | Method and apparatus for extending equipment uptime in ion implantation |
US20060097185A1 (en) * | 2004-10-25 | 2006-05-11 | Epion Corporation | Ionizer and method for gas-cluster ion-beam formation |
Also Published As
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WO2007149727A2 (en) | 2007-12-27 |
CN101512716A (en) | 2009-08-19 |
US20060272775A1 (en) | 2006-12-07 |
JP2014053319A (en) | 2014-03-20 |
US7791047B2 (en) | 2010-09-07 |
US20070108395A1 (en) | 2007-05-17 |
JP2009540534A (en) | 2009-11-19 |
US8368309B2 (en) | 2013-02-05 |
US20060272776A1 (en) | 2006-12-07 |
KR20090023380A (en) | 2009-03-04 |
US20100107980A1 (en) | 2010-05-06 |
EP2027601A4 (en) | 2011-04-20 |
EP2027601A2 (en) | 2009-02-25 |
CN101512716B (en) | 2012-01-18 |
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