WO2008105347A1 - Thin-film transistor fabrication process and display device - Google Patents
Thin-film transistor fabrication process and display device Download PDFInfo
- Publication number
- WO2008105347A1 WO2008105347A1 PCT/JP2008/053109 JP2008053109W WO2008105347A1 WO 2008105347 A1 WO2008105347 A1 WO 2008105347A1 JP 2008053109 W JP2008053109 W JP 2008053109W WO 2008105347 A1 WO2008105347 A1 WO 2008105347A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin
- film transistor
- electrode
- film
- region
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000008569 process Effects 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 37
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 37
- 239000011261 inert gas Substances 0.000 claims abstract description 15
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- 239000010408 film Substances 0.000 claims description 73
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- 239000004973 liquid crystal related substance Substances 0.000 claims description 14
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- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
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- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 79
- 239000004065 semiconductor Substances 0.000 description 32
- 238000002955 isolation Methods 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 14
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- 229910052760 oxygen Inorganic materials 0.000 description 6
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
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- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
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- 229910052799 carbon Inorganic materials 0.000 description 2
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- 238000005477 sputtering target Methods 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008800053105A CN101617408B (en) | 2007-02-20 | 2008-02-18 | Thin-film transistor fabrication process and display device |
US12/524,138 US8436349B2 (en) | 2007-02-20 | 2008-02-18 | Thin-film transistor fabrication process and display device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-039363 | 2007-02-20 | ||
JP2007039363 | 2007-02-20 | ||
JP2007136697A JP5196870B2 (en) | 2007-05-23 | 2007-05-23 | Electronic device using oxide semiconductor and method for manufacturing the same |
JP2007-136697 | 2007-05-23 | ||
JP2008-028001 | 2008-02-07 | ||
JP2008028001A JP2008235871A (en) | 2007-02-20 | 2008-02-07 | Method for forming thin film transistor and display unit |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008105347A1 true WO2008105347A1 (en) | 2008-09-04 |
Family
ID=39434300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/053109 WO2008105347A1 (en) | 2007-02-20 | 2008-02-18 | Thin-film transistor fabrication process and display device |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008105347A1 (en) |
Cited By (52)
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WO2011001822A1 (en) * | 2009-07-03 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2011007675A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011010542A1 (en) * | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011013523A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
WO2011027676A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011027664A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
WO2011046025A1 (en) * | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
JP2011124561A (en) * | 2009-11-13 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
JP2011129895A (en) * | 2009-11-20 | 2011-06-30 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
JP2012033778A (en) * | 2010-07-30 | 2012-02-16 | Dainippon Printing Co Ltd | Thin film transistor and manufacturing method of the same, thin film transistor array and manufacturing method of the same and display device |
US8183099B2 (en) | 2008-12-19 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
US8242496B2 (en) | 2009-07-17 | 2012-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8488077B2 (en) | 2009-08-27 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US8492764B2 (en) | 2009-08-07 | 2013-07-23 | Semicondcutor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
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US8654272B2 (en) | 2009-08-07 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second insulatng layer |
US8704267B2 (en) | 2008-10-16 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device |
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US8759829B2 (en) | 2009-03-27 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer as channel formation layer |
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US8796683B2 (en) | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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US8890166B2 (en) | 2009-09-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8900916B2 (en) | 2009-07-10 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including oxide semiconductor film |
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