WO2008138609A3 - Reflektiv beschichtetes halbleiterbauelement, verfahren zu dessen herstellung sowie dessen verwendung - Google Patents

Reflektiv beschichtetes halbleiterbauelement, verfahren zu dessen herstellung sowie dessen verwendung Download PDF

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Publication number
WO2008138609A3
WO2008138609A3 PCT/EP2008/003877 EP2008003877W WO2008138609A3 WO 2008138609 A3 WO2008138609 A3 WO 2008138609A3 EP 2008003877 W EP2008003877 W EP 2008003877W WO 2008138609 A3 WO2008138609 A3 WO 2008138609A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor component
production
reflectively coated
coated semiconductor
semiconductor
Prior art date
Application number
PCT/EP2008/003877
Other languages
English (en)
French (fr)
Other versions
WO2008138609A2 (de
Inventor
Stefan Janz
Stefan Reber
Original Assignee
Frauhofer Ges Zur Foerderung D
Stefan Janz
Stefan Reber
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Frauhofer Ges Zur Foerderung D, Stefan Janz, Stefan Reber filed Critical Frauhofer Ges Zur Foerderung D
Priority to US12/598,351 priority Critical patent/US20100206371A1/en
Publication of WO2008138609A2 publication Critical patent/WO2008138609A2/de
Publication of WO2008138609A3 publication Critical patent/WO2008138609A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

Die Erfindung betrifft ein reflektiv beschichtetes Halbleiterbauelement, das eine Halbleiterschicht, eine funktionale, im Wesentlichen aus Silicium und Kohlenstoff bestehende Schicht (2), und mindestens eine weitere, im Wesentlichen aus Silicium und Kohlenstoff bestehende Schicht (5), aufweist. Diese weitere Schicht fungiert als Reflektor für auf das Halbleiterbauelement fallendes Licht. Ebenso betrifft die Erfindung ein Verfahren zur Herstellung derartiger Halbleiterbauelemente. Verwendung finden die Halbleiterbauelemente insbesondere als Solarzellen bzw. als Bestandteil von Sensoren oder optischen Filtern.
PCT/EP2008/003877 2007-05-14 2008-05-14 Reflektiv beschichtetes halbleiterbauelement, verfahren zu dessen herstellung sowie dessen verwendung WO2008138609A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/598,351 US20100206371A1 (en) 2007-05-14 2008-05-14 Reflectively coated semiconductor component, method for production and use thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07009628.4 2007-05-14
EP07009628A EP1993142A1 (de) 2007-05-14 2007-05-14 Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung

Publications (2)

Publication Number Publication Date
WO2008138609A2 WO2008138609A2 (de) 2008-11-20
WO2008138609A3 true WO2008138609A3 (de) 2009-01-22

Family

ID=38557802

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/003877 WO2008138609A2 (de) 2007-05-14 2008-05-14 Reflektiv beschichtetes halbleiterbauelement, verfahren zu dessen herstellung sowie dessen verwendung

Country Status (3)

Country Link
US (1) US20100206371A1 (de)
EP (1) EP1993142A1 (de)
WO (1) WO2008138609A2 (de)

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US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
DE102010006315B4 (de) 2010-01-29 2012-08-30 Albert-Ludwigs-Universität Freiburg Verfahren zur lokalen Hochdotierung und Kontaktierung einer Halbleiterstruktur, welche eine Solarzelle oder eine Vorstufe einer Solarzelle ist
DE102010060339A1 (de) * 2010-11-04 2012-05-10 Q-Cells Se Solarzelle und Solarzellenherstellungsverfahren
US9330917B2 (en) * 2012-02-24 2016-05-03 Varian Semiconductor Equipment Associates, Inc. Passivation layer for workpieces formed from a polymer

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GB2116364A (en) * 1982-03-03 1983-09-21 Energy Conversion Devices Inc Photovoltaic device having incident radiation directing means
EP0341017A2 (de) * 1988-05-04 1989-11-08 Astrosystems, Inc. Sonnenzelle mit niedergeschlagener Siliziumschicht
GB2219689A (en) * 1988-06-01 1989-12-13 Mitsubishi Electric Corp Photoelectric element
US5230746A (en) * 1992-03-03 1993-07-27 Amoco Corporation Photovoltaic device having enhanced rear reflecting contact
WO1997038145A1 (de) * 1996-04-03 1997-10-16 Alusuisse Technology & Management Ag Beschichtungssubstrat
EP1722419A1 (de) * 2005-05-12 2006-11-15 General Electric Company Oberflächenpassiviertes photovoltaisches Bauelement

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GB2116364A (en) * 1982-03-03 1983-09-21 Energy Conversion Devices Inc Photovoltaic device having incident radiation directing means
EP0341017A2 (de) * 1988-05-04 1989-11-08 Astrosystems, Inc. Sonnenzelle mit niedergeschlagener Siliziumschicht
GB2219689A (en) * 1988-06-01 1989-12-13 Mitsubishi Electric Corp Photoelectric element
US5230746A (en) * 1992-03-03 1993-07-27 Amoco Corporation Photovoltaic device having enhanced rear reflecting contact
WO1997038145A1 (de) * 1996-04-03 1997-10-16 Alusuisse Technology & Management Ag Beschichtungssubstrat
EP1722419A1 (de) * 2005-05-12 2006-11-15 General Electric Company Oberflächenpassiviertes photovoltaisches Bauelement

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Also Published As

Publication number Publication date
EP1993142A1 (de) 2008-11-19
US20100206371A1 (en) 2010-08-19
WO2008138609A2 (de) 2008-11-20

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