WO2009019949A1 - 磁気ランダムアクセスメモリ及びその製造方法 - Google Patents

磁気ランダムアクセスメモリ及びその製造方法 Download PDF

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Publication number
WO2009019949A1
WO2009019949A1 PCT/JP2008/062300 JP2008062300W WO2009019949A1 WO 2009019949 A1 WO2009019949 A1 WO 2009019949A1 JP 2008062300 W JP2008062300 W JP 2008062300W WO 2009019949 A1 WO2009019949 A1 WO 2009019949A1
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WO
WIPO (PCT)
Prior art keywords
region
manufacturing
layer
same
random access
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PCT/JP2008/062300
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English (en)
French (fr)
Inventor
Kiyokazu Nagahara
Shunsuke Fukami
Tetsuhiro Suzuki
Norikazu Ohshima
Nobuyuki Ishiwata
Original Assignee
Nec Corporation
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Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009526374A priority Critical patent/JP5360596B2/ja
Priority to US12/670,462 priority patent/US8120127B2/en
Publication of WO2009019949A1 publication Critical patent/WO2009019949A1/ja

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Abstract

　磁壁移動型のＭＲＡＭ１００は、強磁性層である磁気記録層１０と、磁化の向きが固定された強磁性層である磁気結合層２０とを備える。磁気記録層１０は、第１領域１０－１と、第２領域１０－２と、第１領域１０－１と第２領域１０－２との間をつなぐ磁化反転領域１０－３とを有する。第１領域１０－１は、磁気結合層２０と磁気的に結合し、その磁化の向きは磁気結合層２０によって第１方向に固定される。一方、第２領域１０－２は、磁気結合層２０と磁気的に結合せず、その磁化の向きは第１方向と逆の第２方向である。
PCT/JP2008/062300 2007-08-03 2008-07-07 磁気ランダムアクセスメモリ及びその製造方法 WO2009019949A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009526374A JP5360596B2 (ja) 2007-08-03 2008-07-07 磁気ランダムアクセスメモリ及びその製造方法
US12/670,462 US8120127B2 (en) 2007-08-03 2008-07-07 Magnetic random access memory and method of manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007203669 2007-08-03
JP2007-203669 2007-08-03
JP2007-323296 2007-12-14
JP2007323296 2007-12-14

Publications (1)

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WO2009019949A1 true WO2009019949A1 (ja) 2009-02-12

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PCT/JP2008/062300 WO2009019949A1 (ja) 2007-08-03 2008-07-07 磁気ランダムアクセスメモリ及びその製造方法

Country Status (3)

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US (1) US8120127B2 (ja)
JP (1) JP5360596B2 (ja)
WO (1) WO2009019949A1 (ja)

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WO2011052475A1 (ja) * 2009-10-26 2011-05-05 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
WO2011118461A1 (ja) * 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ
WO2011152281A1 (ja) * 2010-06-03 2011-12-08 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP2012178541A (ja) * 2010-11-26 2012-09-13 Renesas Electronics Corp 磁気メモリ
JP5600344B2 (ja) * 2010-03-10 2014-10-01 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
US10916283B2 (en) 2019-02-22 2021-02-09 Tdk Corporation Magnetic domain wall movement element and magnetic recording array
JP2021057519A (ja) * 2019-10-01 2021-04-08 Tdk株式会社 磁壁移動素子及び磁気記録アレイ
US11963461B2 (en) 2020-05-26 2024-04-16 Tdk Corporation Magnetic domain wall movement element and magnetic recording array

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US8889433B2 (en) * 2013-03-15 2014-11-18 International Business Machines Corporation Spin hall effect assisted spin transfer torque magnetic random access memory
JP6219200B2 (ja) 2014-02-27 2017-10-25 株式会社東芝 磁気装置
JP6861996B2 (ja) * 2015-05-14 2021-04-21 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ装置
US10482987B2 (en) * 2016-04-21 2019-11-19 Tdk Corporation Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
US10553299B2 (en) * 2017-04-14 2020-02-04 Tdk Corporation Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element
WO2018189964A1 (ja) 2017-04-14 2018-10-18 Tdk株式会社 磁壁利用型アナログメモリ素子、磁壁利用型アナログメモリ、不揮発性ロジック回路及び磁気ニューロ素子
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JP6555404B1 (ja) * 2018-08-02 2019-08-07 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ
US10871529B2 (en) 2018-09-11 2020-12-22 Honeywell International Inc. Spintronic mechanical shock and vibration sensor device
US10876839B2 (en) 2018-09-11 2020-12-29 Honeywell International Inc. Spintronic gyroscopic sensor device
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Cited By (18)

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Publication number Priority date Publication date Assignee Title
JP2010219104A (ja) * 2009-03-13 2010-09-30 Nec Corp 磁気メモリ素子、磁気メモリ、及びその製造方法
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WO2011052475A1 (ja) * 2009-10-26 2011-05-05 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
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JP5600344B2 (ja) * 2010-03-10 2014-10-01 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
WO2011118461A1 (ja) * 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ
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WO2011152281A1 (ja) * 2010-06-03 2011-12-08 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP2012178541A (ja) * 2010-11-26 2012-09-13 Renesas Electronics Corp 磁気メモリ
US10916283B2 (en) 2019-02-22 2021-02-09 Tdk Corporation Magnetic domain wall movement element and magnetic recording array
JP2021057519A (ja) * 2019-10-01 2021-04-08 Tdk株式会社 磁壁移動素子及び磁気記録アレイ
US11653573B2 (en) 2019-10-01 2023-05-16 Tdk Corporation Magnetic domain wall movement element and magnetic recording array
JP7419729B2 (ja) 2019-10-01 2024-01-23 Tdk株式会社 磁壁移動素子及び磁気記録アレイ
US11963461B2 (en) 2020-05-26 2024-04-16 Tdk Corporation Magnetic domain wall movement element and magnetic recording array

Also Published As

Publication number Publication date
JPWO2009019949A1 (ja) 2010-10-28
US20100193889A1 (en) 2010-08-05
US8120127B2 (en) 2012-02-21
JP5360596B2 (ja) 2013-12-04

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