WO2009030865A2 - Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaïque comprenant un tel dispositif et procede de depot de couches minces - Google Patents
Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaïque comprenant un tel dispositif et procede de depot de couches minces Download PDFInfo
- Publication number
- WO2009030865A2 WO2009030865A2 PCT/FR2008/051542 FR2008051542W WO2009030865A2 WO 2009030865 A2 WO2009030865 A2 WO 2009030865A2 FR 2008051542 W FR2008051542 W FR 2008051542W WO 2009030865 A2 WO2009030865 A2 WO 2009030865A2
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- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- metal substrate
- thin
- thin layer
- crystallographically
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 147
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 106
- 239000002184 metal Substances 0.000 title claims abstract description 106
- 238000000151 deposition Methods 0.000 title claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 132
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 131
- 239000010703 silicon Substances 0.000 claims abstract description 130
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 62
- 239000000956 alloy Substances 0.000 claims abstract description 62
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 27
- 239000003292 glue Substances 0.000 claims description 24
- 230000012010 growth Effects 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000008246 gaseous mixture Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims 1
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims 1
- 239000011651 chromium Substances 0.000 abstract description 18
- 239000011572 manganese Substances 0.000 abstract description 18
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 17
- 229910052804 chromium Inorganic materials 0.000 abstract description 11
- 229910052748 manganese Inorganic materials 0.000 abstract description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 8
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract description 8
- 229910017052 cobalt Inorganic materials 0.000 abstract description 8
- 239000010941 cobalt Substances 0.000 abstract description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 7
- 229910052796 boron Inorganic materials 0.000 abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052791 calcium Inorganic materials 0.000 abstract description 4
- 239000011575 calcium Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 abstract description 4
- 239000011777 magnesium Substances 0.000 abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 69
- 238000004519 manufacturing process Methods 0.000 description 18
- 210000002381 plasma Anatomy 0.000 description 17
- 238000003486 chemical etching Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000005096 rolling process Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910052729 chemical element Inorganic materials 0.000 description 6
- 238000005097 cold rolling Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910004014 SiF4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000002144 chemical decomposition reaction Methods 0.000 description 2
- 150000003841 chloride salts Chemical class 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12993—Surface feature [e.g., rough, mirror]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the invention relates to a crystallographically textured metal substrate, a crystallographically textured device, a cell and a photovoltaic module comprising such a device and a thin film deposition method.
- Thin film photovoltaic cells presently have two distinct production lines.
- the first sector concerns thin films of amorphous, polymorphous, nanochtalline and microcrystalline silicon.
- the second sector concerns thin layers of polycrystalline silicon.
- amorphous silicon thin films are generally deposited at low temperatures (100 ° C. to 350 ° C.) by plasma techniques, for example the plasma enhanced chemical vapor deposition technique (PECVD). Plasma Enhanced Chemical Vapor Deposition ”) on glass substrates or on flexible and low cost substrates such as polymers and stainless steels.
- PECVD plasma enhanced chemical vapor deposition
- Plasma Enhanced Chemical Vapor Deposition Plasma Enhanced Chemical Vapor Deposition
- This technology has economic advantages but also two major weak points which are a conversion efficiency limited to 10% in industrial process and a degradation of the efficiency under illumination known as Staebler-Wronski instability, in the case of amorphous silicon.
- the degradation phenomenon can be limited by the elaboration of thin layers of polymorphous silicon characterized by the incorporation of nano-crystallites of silicon within the amorphous silicon.
- the processes for obtaining silicon use high temperature steps. It is possible to deposit amorphous silicon at low temperature but it is recrystallized by high temperature annealing.
- the degree of crystallization depends on the deposition temperature.
- the usual deposition processes also include a phase of crystallization of the amorphous silicon by means of a heat treatment of between 600 ° C. and 1000 ° C. (eg vacuum TTH, TTH laser) or by introducing the thin film into a specific reactor (eg hydrogen plasma, microwaves, etc.).
- a second amorphous silicon film is then deposited by the PECVD deposition technique and crystallized by a heat treatment at 600 ° C. for 10 h.
- a crystalline thin film with a columnar structure having a conversion yield of 9.2% is obtained.
- WO 96/17388 discloses a widely known method which is the use of silicon priming layers deposited in the amorphous state and then crystallized to serve as epitaxial growth seeds for the next thin layer. This process is a multi-layer process.
- US 5,340,410 discloses another technique of selecting an orientation of silicon grains by selectively etching a coarse-grained polycrystalline silicon film (40 ⁇ m to 50 ⁇ m) obtained by heat treatment. ), in a solution of potassium hydroxide. A second thin silicon film having an orientation ⁇ 1 1 1 ⁇ is then obtained by a liquid phase deposition process (silicon supersaturated liquid metal solution).
- some substrates used are at a high melting temperature (T> 1000 ° C): silicon, quartz, graphite, ceramics, metals (eg titanium), alloys and steels.
- T> 1000 ° C silicon, quartz, graphite, ceramics, metals (eg titanium), alloys and steels.
- T ⁇ 1000 ° C low temperature melting
- One of the objectives of the present invention is therefore to provide a thin, non-brittle, flexible substrate having a high melting temperature and structural characteristics favorable to oriented or epitaxial growth of thin films.
- Another object of the present invention is to provide a device formed of a metal substrate as described above and a polychstalline thin film based on silicon and for photovoltaic use.
- Another object of the present invention is to provide a more efficient cell and a photovoltaic module, making it possible to trap the light more advantageously and thus presenting a better electrical efficiency.
- Another object of the present invention is also to provide a method for depositing thin layers to prevent any pollution of silicon by the substrate.
- the invention relates to a crystallographically textured metal substrate comprising a connecting surface and a surface for receiving a thin-film deposit, said crystallographically-textured metallic substrate being made of an alloy having a face-centered cubic crystal system and a majority ⁇ 100 ⁇ ⁇ 001> cube crystallographic texture, the surface intended to accommodate the thin-layer deposition comprising grains predominantly having ⁇ 100 ⁇ crystallographic planes parallel to the surface intended to receive a thin-layer deposition.
- crystallographic texture is meant a preferential orientation of the crystals of the alloy relative to the reference of the metal substrate. The texture is measured by X-ray diffraction and represented by pole figures, as described later.
- the alloy constituting the crystallographically textured metal substrate is an iron-nickel alloy whose composition comprises, in% by weight relative to the total weight of the alloy:
- the percentages of nickel, chromium, copper, cobalt and manganese are such that the alloy satisfies the following condition:
- the alloy comprises up to 1% by weight of one or more deoxidizing elements chosen from silicon, magnesium, aluminum and calcium, the remainder of the elements constituting the alloy being iron and impurities.
- the present invention also relates to the following features which may be considered individually or in all their technically possible combinations and each bring specific advantages:
- the percentages of nickel, chromium, copper, cobalt and manganese are such that the alloy satisfies the following condition:
- the surface intended to receive a thin-layer deposition of the crystallographically-textured metal substrate has a roughness R 3 of less than 150 nm, and preferably less than 50 nm
- the crystallographically-textured metal substrate is thin with a thickness of between 0 , 5 mm and 0.05 mm, preferably of the order of 0.1 mm
- the grains on the surface intended to receive a thin layer deposit are etched in the form of a pyramid having ⁇ 1 1 1 ⁇ planes and steps along the ⁇ 100 ⁇ planes so as to form a blazed grating type network.
- the crystallographically textured metal substrate according to the invention has the advantages of being thin, non-brittle, flexible, with a high melting temperature, a mesh parameter close to that of silicon and silicon-based semiconductors, a roughness controlled surface before chemical etching, a surface geometry after chemical etching to reduce the reflectivity of the crystallographically textured metal substrate and a dilation adapted to that of silicon.
- the invention also relates to a crystallographically textured device.
- the invention comprises a crystallographically textured metal substrate, as defined above, on which a polycrystalline thin layer based on silicon has been deposited, the polycrystalline thin layer having a preferred crystallographic orientation ⁇ 100 ⁇ and ⁇ 1 1 1 ⁇ .
- silicon-based is intended to mean a polycrystalline thin layer that can comprise either substantially silicon, doped silicon or a composition comprising silicon and other chemical elements (for example a thin layer of Si x Ge- ⁇ composition). - x ).
- the silicon-based polycrystalline thin film deposited on the substrate has a large volume fraction of crystallized silicon, a volume fraction of large silicon grains and oriented silicon grains.
- Such a crystallographically textured metal substrate / thin polycrystalline silicon-based layer combination considerably reduces the quantities of silicon used.
- the light distribution in the thin silicon layer is also improved.
- the present invention also relates to the following features which may be considered in isolation or in all their technically possible combinations and each bring specific advantages: the crystalline mesh parameter of the crystallographically textured metal substrate is identical to or nearly equal to that of the silicon-based polycrystalline thin film, the average coefficient of expansion of the alloy constituting the crystallographically textured metal substrate is close to that of the polycrystalline thin layer, the polycrystalline silicon-based thin layer has a thickness of less than 10 ⁇ m , preferably less than 5 ⁇ m, and comprises silicon crystals with a size of between 0.1 and 2 ⁇ m.
- the silicon-based polycrystalline thin layer deposited on the crystallographically textured metal substrate has a large volume fraction of crystallized silicon, a large volume fraction of large silicon grains and oriented silicon grains.
- the orientation of the grains present on the surface of the crystallographically textured metal substrate is partially taken up by the silicon.
- Such an association crystallographically textured metal substrate / silicon-based polycrystalline thin layer makes it possible to considerably reduce the quantities of silicon used (layer with a thickness of less than 5 ⁇ m).
- the light distribution in the polycrystalline thin layer of silicon is also improved.
- the fact that the average coefficient of expansion of the iron-nickel alloy is close to that of the silicon-based polycrystalline thin film makes it possible to limit the thermal stresses generated on the polycrystalline silicon-based film in operation and to increase the duration of life of photovoltaic cells.
- the invention also relates to a photovoltaic cell.
- the invention comprises a crystallographically textured device, as defined above.
- the present invention also relates to the following features which may be considered individually or in all their technically possible combinations and each bring specific advantages:
- the photovoltaic cell comprises:
- a crystallographically textured device in which:
- the crystallographically textured metal substrate has a nickel content equal to 41% by weight relative to the total weight of the alloy constituting the metal substrate,
- the silicon of the thin layer of silicon is doped
- a thin layer of a conductive transparent oxide deposited on the thin polycrystalline silicon doped layer and
- a metal grid disposed on the thin conductive transparent oxide layer and comprising a plurality of elements including a central grid element.
- the crystallographically texture device and the various thin layers are traversed by a connector connected to the central grid element and opening out of the photovoltaic cell through the connection surface of the crystallographically textured metal substrate, said connector being surrounded by an insulator extending from the connection surface of the crystallographically textured metal substrate to the central grid member.
- the invention also relates to a photovoltaic module.
- the photovoltaic module comprises:
- two thin layers of heat-activatable glue including a first and a second thin layer of heat-activatable glue, the first thin layer of heat-activatable glue being deposited on the thin layer of polymer; a conductive layer formed of a plurality of photovoltaic cells, such as as defined above, and two copper strips disposed at the respective ends of the conductive layer formed of a plurality of photovoltaic cells, said photovoltaic cells being in the form of strips and the two copper strips being disposed between the first and second thin layers of heat-activatable glue, parallel to each other, inclined with respect to the thin layers of heat-activatable glue and overlapping so as to form a row of photovoltaic cells and copper strips in contact in a direction parallel to the thin layers of glue thermoreactivable, the plurality of photovoltaic cells and the two copper strips forming a series connection, and
- the cell and the photovoltaic module are more efficient, and make it possible to trap the light more advantageously.
- An orthogonally striking light ray of the cell or photovoltaic module will tend to reflect and remain trapped in the silicon-based polychstalline thin film.
- the electrical efficiency of the cell or photovoltaic module is improved. For the same amount of light energy incident on the surface of the cell or photovoltaic module, the amount of electrical energy converted and obtained with such a cell or photovoltaic module is greater than the amount of electrical energy obtained. with a cell or a photovoltaic module of the prior art.
- the invention also relates to a method for depositing silicon-based thin layers on a crystallographically textured metal substrate, as defined above.
- the present invention also relates to the following characteristics which may be considered in isolation or in all their technically possible combinations and each bring specific advantages:
- the chemical vapor deposition (CVD) method is a method of radiofrequency plasma assisted chemical vapor deposition (RFPECVD), the plasma comprising a gas mixture of silane we have used SiF4, hydrogen and argon, and the radiofrequency power used being of the order of 16 W.
- RFPECVD radiofrequency plasma assisted chemical vapor deposition
- the plasma comprising a gas mixture of silane we have used SiF4, hydrogen and argon
- the radiofrequency power used being of the order of 16 W.
- the process for depositing thin layers produced at low temperature makes it possible to avoid any pollution of the silicon by the elements constituting the crystallographically textured metal substrate. Conversion efficiencies are also improved.
- the crystallographically textured metal substrate makes it possible to promote the mechanisms of epitaxial or oriented growth with large grains of silicon, directly during the deposition phases.
- FIG. 1 shows a pole figure ⁇ 1 1 1 ⁇ which is characteristic of the majority cube crystallographic texture
- FIG. 2 represents a pole figure ⁇ 1 1 1 ⁇ which is characteristic of the cube + macle / cube crystallographic texture
- - Figure 3 shows a pole figure ⁇ 1 1 1 ⁇ which is characteristic of an isotropic crystallographic texture
- FIG. 4 shows two pole figures ⁇ 1 1 1 ⁇ of polycrystalline silicon thin films obtained according to two different embodiments of the invention
- FIGS. 5a and 5b represent observations at different magnifications, carried out under a scanning electron microscope, obtained after chemical etching of the surface of a crystallographically textured metal substrate comprising an iron-nickel alloy with 41% of nickel;
- FIG. 6 shows a crystallographically textured device comprising a crystallographically textured metal substrate having undergone chemical etching
- FIG. 7 represents the distribution of the pyramidal cavities after chemical etching of the surface of the substrate
- FIG. 8 represents a photovoltaic cell, according to one embodiment of the invention
- FIG. 9 represents a photovoltaic cell with rear contact, according to another embodiment of the invention.
- FIG. 10 represents a photovoltaic module, according to one embodiment of the invention.
- FIG. 11 represents a crystallographically textured metal substrate strip comprising engraved grooves;
- FIG. 12 represents a procedure for deposition of thin layers by chemical decomposition of the reactive gases in a low temperature discharge plasma
- FIG. 13 represents an enlargement of the silicon growth zone on the polychstalline thin film during the procedure.
- the invention relates to a crystallographically textured metal substrate 1 comprising a connecting surface 2 and a surface 3 for receiving a thin-film deposit, as shown in FIG. 6.
- the crystallographically-textured metal substrate 1 is made of an alloy having a centered face cubic crystal system and a majority ⁇ 100 ⁇ ⁇ 001> cube crystallographic texture.
- the surface intended to receive the thin-film deposition 3 comprises grains 4 presenting predominantly crystallographic planes ⁇ 100 ⁇ parallel to the surface 3 intended to receive a thin-film deposition.
- the alloy constituting the crystallographically textured metal substrate 1 must have a high stacking fault energy.
- the alloy constituting the crystallographically textured metal substrate 1 is an iron-nickel alloy comprising at least 30% nickel and may comprise nickel-substitution elements such as chromium, nickel, copper, cobalt or manganese. These elements must respect the following relation:
- the content of nickel substitution elements is further limited as follows: the copper content is less than or equal to 15% by weight, the chromium content is less than or equal to 15% by weight, the cobalt content is lower or equal to 12% by weight, and the manganese content is less than or equal to 5% by weight.
- the contents of nickel, chromium, copper, cobalt and manganese are such that:
- the alloy thus defined has an average coefficient of expansion ⁇ 2 o 100 , between 20 ° C and 100 ° C, greater than 10 "6 K " 1 , and preferably between 10 "6 K “ 1 and 10 10 "6 K “1 .
- the alloy may also comprise up to 1% of deoxidation elements selected from silicon, magnesium, aluminum and calcium.
- the alloy may also include residual chemical elements resulting from the processing. The content of residual chemical elements must be reduced to a minimum and not exceed 1% by weight relative to the total weight of the alloy.
- the impurities consist of the following chemical elements: titanium, molybdenum, tungsten, niobium, tantalum and vanadium, which must verify the following relationship:
- the sulfur content must be less than 0.0007% by weight relative to the total weight of the alloy.
- the phosphorus content must be less than 0.003% by weight relative to the total weight of the alloy.
- the boron content must be less than 0.0005% by weight relative to the total weight of the alloy.
- the lead content must be less than 0.0001% by weight relative to the total weight of the alloy.
- a primary recrystallization heat treatment of the crystallographically hardened textured metal substrate is necessary
- concentrations of residual chemical elements such as titanium, molybdenum, tungsten, niobium, tantalum or vanadium in the alloy must be less than 1%.
- the critical content depends on the chemical element considered;
- the method of manufacturing the crystallographically textured metal substrate 1, comprises a step of producing the alloy constituting the crystallographically textured metallic substrate 1.
- the alloy constituting the crystallographically textured metallic substrate 1 is developed in an electric arc furnace, cast in ingots or directly in the form of slabs by means of a continuous casting of slabs.
- the ingots, such as the slabs, are hot-processed so as to obtain hot strips whose thickness is between 1.5 mm and 13 mm.
- the hot strips are pickled and polished to obtain coils with a flawless surface, ie: without scale, without oxidized penetration, without straw, homogeneous in thickness in the cross direction and the long direction of the alloy sheets .
- the method of manufacturing the crystallographically textured metal substrate 1 also comprises a step of rolling and crystallographic texturing of the strips.
- the hot strips are processed by cold rolling.
- the reduction ratio, ⁇ (e, - and) / ⁇ , where e, and and are respectively the initial thickness and the final thickness of the alloy sheets, must be greater than 85%, and preferably ⁇ > 90%. This degree of severe deformation before heat treatment is essential to prepare the microstructure of the alloy. This results in a strongly hardened alloy sheet whose thickness is between 0.05 mm and 1 mm.
- any severe deformation process by symmetrical or asymmetric cold rolling (ie with circumferential speeds of the same or different rolling mill rolls) producing a deformation greater than 90% is applicable to develop the cubographic crystallographic texture and more particularly the process described in the document "Ultra-Grain refinement of 36% Ni steel by accumulative roll-bonding process - K. Inoue, N. Tsuji, Y. Saito - International Symposium on Ultrafine Grained Steels (ISUGS 2001) 126-129 - The Iron and Steel Institute of Japan ".
- the method of manufacturing the crystallographically textured metal substrate 1 also comprises a roughness transfer step.
- the process below is cited as a non-unique example of embodiment.
- the roughness of the alloy sheets is controlled during the rolling passes. For example, from a hot-rolled strip 3 mm thick, a hardened alloy sheet of 95% is used, ie having a final thickness of 0.15 mm.
- the cold rolling is carried out, for example, in 13 passes of 20% on a reversible rolling mill with cylinders of low roughness. At the end of each pass, the roughness of the alloy sheet does not exceed 200 nm.
- the rolling 14 ⁇ m ⁇ is the one that achieves the desired roughness transfer.
- the reduction rate is less than 20%, and more specifically less than 7%, it is called 'skin pass'.
- This last pass is carried out with a cylinder of very low roughness for the surface roughness R a sight (R a ⁇ 30 nm).
- the method of manufacturing the crystallographically textured metal substrate 1 also includes a step of crystallographic texturing of the webs.
- the alloy sheet After cold rolling, the alloy sheet is subjected to a primary recrystallization heat treatment (TTH), in a protective atmosphere, so as to develop the desired ⁇ 100 ⁇ ⁇ 001> cube crystallographic texture, without oxidizing the surface of the strip .
- TTH primary recrystallization heat treatment
- the heat treatment can be carried out in a static oven or in a parade oven, under hydrogen or under a primary vacuum.
- the time t, temperature T ° C must be adjusted to develop an intense cubic texture and little disoriented. If the temperature is too high (for example: T> 1100 ° C) or if the duration is too long (for example 6 h at 1080 ° C), the heat treatment can generate a secondary recrystallization which destroys the cube component sought at detrimental to other unwanted random components.
- Typical heat treatments are:
- the alloy sheet has an intense cubic texture and weakly disoriented texture, with a grain size of between 1 micron and 100 microns and an average roughness R a less than 50 nm, allowing the direct use of the alloy after a simple degreasing.
- the alloy sheet is then planar and sheared to the width determined by the silicon deposition process.
- a metal substrate 1 having an intense ⁇ 100 ⁇ ⁇ 001> cubic crystallographic texture and low disorientation is obtained.
- the representation of a crystallographic texture amounts to defining the orientation of the grains with respect to the sample reference frame constituted, in the case of a substrate having undergone a range of cold rolling, by the rolling direction (DL), the transverse direction (DT) and normal direction (DN).
- orientations or components of crystallographic textures are described by the Miller indices ⁇ hkl ⁇ ⁇ uvw>, where ⁇ hkl ⁇ denotes the family of crystallographic planes of the grains parallel to the rolling plane and ⁇ uvw> the family of crystallographic directions of the parallel grains to the rolling direction.
- a crystallographic texture is generally described by X-ray diffraction according to the Schulz reflection method.
- the sample is placed in the center of a crystallographic texture goniometer in diffraction position, at a Bragg angle ⁇ , corresponding to the diffraction conditions of a family of planes ⁇ hkl ⁇ . It is then subjected to rotations ⁇ (axis parallel to DT) and ⁇ (axis parallel to DN).
- the intensity of the beam collected by the counter RX is proportional to the number of grains whose planes ⁇ hkl ⁇ are in diffraction condition.
- the crystallographic texture of the crystallographically textured metal substrate 1 is then represented in the form of pole figures by means of stereographic projections of the densities distributions of the normals to the ⁇ hkl ⁇ diffracting planes.
- the crystallographic texture of the substrate is characterized by the presence of a quasi-single cube component, intense and weakly disoriented.
- the quasi-single cube component is usually associated with the component ⁇ 221 ⁇ ⁇ 122>, called the macle / cube, which must be minimized.
- FIGS. 1 to 3 show examples of pole figures ⁇ 1 1 1 ⁇ measured on metal substrates of iron-nickel alloy having a face-centered cubic crystal system comprising a content of 41% nickel relative to the total weight of the alloy.
- Figure 1 shows a pole figure ⁇ 1 1 1 ⁇ which is characteristic of the desired majority cube crystallographic texture.
- Fig. 2 shows a pole figure ⁇ 1 1 1 ⁇ which is characteristic of the cubic + macle / cube crystallographic texture and
- Fig. 3 shows a pole figure ⁇ 1 1 1 ⁇ which is characteristic of an isotropic crystallographic texture.
- Figure 1 shows the presence of poles ⁇ 1 1 1 ⁇ 5 of the crystallographic texture cube ⁇ 100 ⁇ ⁇ 001> majority, intense and little disoriented.
- FIG. 2 shows the case where the twin / cube component ⁇ 221 ⁇ ⁇ 122> 6 is not negligible compared to the less intense and disoriented cube component.
- Figure 3 shows an example of an isotropic structure characterized by the presence of all possible uniformly distributed orientations. Figures 2 and 3 are those to avoid.
- Ic is the maximum intensity diffracted by the ⁇ 1 1 1 ⁇ planes near the ideal orientation (001) [100]: ⁇ ⁇ 54.74 ° and ⁇ ⁇ 45 °.
- Icm is the maximum intensity diffracted by the ⁇ 1 1 1 ⁇ planes near the ideal orientation (122) [221]: ⁇ ⁇ 15.79 ° and ⁇ ⁇ 13.63 °.
- the ratio R Ic / lmc should be as high as possible (R> 10).
- the disorientation of the cubic crystallographic texture can be obtained by measuring the width at mid-height of the intensities diffracted by the ⁇ 1 1 1 ⁇ planes in the neighborhood of the ideal orientation (001) [100], that is to say say in ⁇ ⁇ 54.74 ° and ⁇ ⁇ 45 when we vary the angle ⁇ of +/- ⁇ and ⁇ of +/- ⁇ .
- the total disorientation in ⁇ measured at mid-height must be: ⁇ ⁇ 20 °.
- the total disorientation in ⁇ measured at mid-height should be: ⁇ ⁇ 20 °.
- the average roughness R a of the crystallographically textured metal substrate 1 must be low. Roughness is the micro-geometric state of the surface.
- the average roughness R a is defined by the expression:
- the crystallographically textured metal substrate 1 must have a mean roughness measured in the very small cross direction: R 3 ⁇ 150 nm and preferably less than 50 nm.
- the size of the grains on the surface of the crystallographically textured metal substrate 1 is greater than 1 ⁇ m.
- the crystallographically textured metal substrate 1 is thin with a thickness of between 0.5 mm and 0.05 mm, preferably of the order of 0.1 mm.
- the invention also relates to a crystallographically textured device 13 comprising a crystallographically textured metal substrate 1, as defined above, on which has been deposited a thin layer polychstalline based on silicon 1 1 (Si or Si x Ge-IX for example).
- a crystallographically-textured device 13 is shown in FIG. 6.
- the crystallographically-textured device 13 is intended for the manufacture of photovoltaic cells or for depositing silicon layers to create semiconductor devices. More specifically, the silicon-based polycrystalline thin film 11 is deposited on the surface 3 of the substrate intended to receive a thin-film deposition.
- a set of thin layers 40 which will be described later, comprising, inter alia, the silicon-based polycrystalline thin layer 1 1 which is in contact with the metal substrate.
- the polycrystalline silicon-based thin layer 11 has a preferred orientation ⁇ 100 ⁇ and ⁇ 1 1 1 ⁇ .
- the polycrystalline silicon-based thin layer 11 can be deposited by epitaxy which is a known mechanism of crystal growth with arrangement of atoms.
- the crystallographically textured metal substrate 1 is used as seed growth of the thin film 1 1 as the silicon atoms or nanochstals are added.
- Epitaxial growth is usually only possible if there is mesh agreement between the deposited crystalline system (in our case, silicon) and that of substrate 1 (in our case, the iron-nickel alloy substrate).
- the usual epitaxial conditions are: same crystalline system (in our case, the cubic face-centered silicon system) and very close mesh parameters.
- the disagreement D between the mesh parameters, defined by the following expression, must be less than 3%:
- a is the mesh parameter.
- the crystallographic texture of the thin film 11 is approximately identical to that of the crystallographically textured metal substrate 1.
- the epitaxy was carried out at high temperature.
- the silicon deposition process according to the invention makes it possible to carry out an epitaxy at 200 ° C. If the difference in the mesh parameters is greater than 3% but less than 20%, there may be oriented growth of the thin film 1 1.
- the grains of the thin film 11 have a parallel crystallographic plane (hkl). at the surface of the crystallographically textured metal substrate 1. Since the grains of the thin film 11 are disoriented in the plane of the substrate 1, the pole figure representing the crystallographic texture of the thin film is then a ring, as shown in FIG. thin layer is said to have an orientation ⁇ hkl ⁇ .
- FIG. 4 shows the poles ⁇ 1 1 1 ⁇ of polycrystalline silicon thin films 11 obtained according to two embodiments of the invention.
- the pole figure ⁇ 1 1 1 ⁇ at the top of the figure corresponds to a crystallographically textured metal substrate 1 which has not undergone chemical etching.
- the figure of poles ⁇ 1 1 1 ⁇ at the bottom of the figure corresponds to a crystallographically textured metal substrate 1 having undergone chemical etching, as described below.
- the pole figures ⁇ 1 1 1 ⁇ reveal the presence of a thin film of silicon texture.
- the grains are disoriented in the plane of the crystallographically textured metallic substrate 1.
- the deposition on a crystallographically textured metal substrate 1 not having undergone chemical etching favors the ⁇ 11 1 ⁇ and ⁇ 100 ⁇ orientations. Deposition on a crystallographically textured metal substrate 1 having been etched promotes ⁇ 100 ⁇ orientation.
- the iron-nickel alloy substrate 1 must have both of the following characteristics:
- silicon-based polycrystalline thin films having a volume fraction of silicon of 58% by volume for grains smaller than 0.1 ⁇ m and a volume fraction of silicon of 42% for sizes grains between 0.1 ⁇ m and 1 ⁇ m.
- the alloy constituting the crystallographically textured metal substrate 1 must have a coefficient of expansion close to that of silicon, between -25 ° C. and + 150 ° C.
- the thickness of the substrate 1 alloy is of the order of 100 microns while that of the thin film 1 1 is less than 5 microns. Substrate 1 therefore imposes on silicon its length variations due to thermal expansion. If no precaution is taken to adapt the coefficient of expansion of the substrate 1 to that of silicon, the thin film 1 1 can suffer two types of damage degrading the optoelectronic properties: a decohesion of the thin film 1 1 may generate a peel of silicon deposition, cracking of the thin film 1 1 when the substrate 1 subjected it to tensile stresses and the appearance of dislocations in the thin layer of silicon 1 1. The thin layers of silicon 1 1 are deposited at higher temperatures at 100 ° C.
- the operating temperature of the cells or photovoltaic modules is between -50 ° C. and + 100 ° C. It is therefore recommended that the average coefficient of expansion of substrate 1 be greater than or equal to to that of silicon ( ⁇ S ⁇ ⁇ 2.6 10-6 K "1 ) so as to keep the thin layer 1 1 in compression during use.
- the average coefficient of expansion ⁇ 2 100 of the substrate 1 alloy between 20 ° C and 100 ° C must be greater than 10 "6 K " 1 , and preferably between 10 "6 K “ 1 and 10 10 "6 K “1 .
- the silicon-based polychstalline thin film 11 has a thickness of less than 5 ⁇ m, preferably of between 2 and 3 ⁇ m, and comprises silicon crystals with a size of between 0.1 ⁇ m and 2 ⁇ m.
- the surface 3 of the crystallographically textured metal substrate 1, intended to receive a thin-layer deposition can be etched before the deposition step of the polycrystalline thin-film layer. silicon 1 1.
- the cubographic crystallographic texture of the crystallographically textured metal substrate 1 provides a structure comparable to that of a single crystal.
- the grains whose size is close to 10 ⁇ m (GASTM 10) are approximately all oriented in a similar way since the desired disorientation between the grains is less than 20 °.
- the etching can be carried out by dipping, by passing the metal substrate 1 between two rolls for a period of between 0.1 and 1 min, in a bath thermostated between 15 ° C and 35 ° C and containing for example a solution of various chlorides :
- the metal substrate 1 is rinsed abundantly in several baths and dried at a temperature between 100 ° C and 200 ° C, still in a parade process. It is important to have sufficiently rinsed the surface 3 of the substrate 1 in order to prevent any corrosion by the chlorides.
- the metal substrate 1 can be oiled, in this case it must be degreased before the deposition of the thin film 1 1.
- the result is a substrate surface 3 consisting of inverted pyramids, as shown in FIG. 6, of a few microns in height, on which a photovoltaic cell consisting of a layer can be constructed.
- the surface of the photovoltaic cell 9 is also shown in FIG.
- Surface 3 has ⁇ 1 1 1 ⁇ planes, which generates types of cones on the surface.
- the grains 4 are in the form of a pyramid having ⁇ 1 1 1 ⁇ planes and comprising steps 12 along the ⁇ 100 ⁇ planes so as to form a network of the "blazed grating" type.
- the pyramidal cavities 10 are distributed as the alloy grains 4 and therefore in a random manner, which improves the distribution of the light in the thin layer of silicon 11.
- the blazed network phenomenon tends to maintain the long wavelengths in the silicon layer 1 1.
- This technique makes it possible to diffract the photons on the surface of the network thus created and to trap them in the silicon layers 1 1.
- the structuring of the surface of the silicon layer 11 makes it possible to attenuate the reflectivity of the crystallographically-textured metal substrate 1.
- the invention also relates to a photovoltaic cell comprising a crystallographically-textured device 1 as described above.
- the photovoltaic cell comprises a crystallographically textured device 13 in which the crystallographically textured metal substrate 1 has a nickel content equal to 41% by weight relative to the total weight of the alloy constituting the metal substrate.
- the silicon of the polycrystalline silicon thin layer 11 may be doped. It can be doped P or N, either phosphorus or boron, depending on the type of diode desired (PIN or PIN).
- the photovoltaic cell also comprises an undoped polycrystalline intrinsic silicon thin layer 14 deposited on the crystallographically-textured device 13, a doped polycrystalline silicon thin layer 15 deposited on the intrinsic polycrystalline silicon thin layer 14, a thin layer of a transparent conductive oxide 16 deposited on the thin layer of boron-doped polycrystalline silicon 15, and a metal gate 17 disposed on the thin layer of a transparent conductive oxide 16 and comprising a plurality of elements, including a central grid element 18.
- the silicon of the doped polycrystalline silicon thin layer 15 may be N or P-doped, either phosphorus or boron, depending on the type of diode desired (PIN or PIN).
- the thin layer of a transparent conductive oxide 16 may be a layer of indium tin oxide (ITO), ZnO or SnO 2 , for example.
- the doped layers are very thin with respect to the thickness of the intrinsic polycrystalline silicon thin layer 14.
- the silicon of the silicon layer 1 1 is massively crystalline, the proportion of amorphous silicon is less than 1%.
- silicon has a preferential orientation: the grains are oriented with their plane ⁇ 1 1 1 ⁇ and ⁇ 100 ⁇ parallel to the planes of the highly textured iron-nickel alloy.
- One possible method of assembly is to cut photovoltaic cell boards, for example square, and connect the upper surface to the lower surface of the next photovoltaic cell using copper flats.
- the crystallographically textured device 13 and the various thin layers 14 to 16 of the photovoltaic cell are traversed by a connector 19, as shown in FIG. 9.
- the connector 19 is connected to the FIG. central grid element 18 and opens out of the photovoltaic cell through the connection surface 2 of the crystallographically textured metal substrate 1.
- the connector 19 is surrounded by an insulator 20 extending from the connection surface 2 of the crystallographically textured metal substrate 1 to the central grid element 18.
- a photovoltaic cell is called a rear-contact photovoltaic cell.
- the two connections are located on the same side of the photovoltaic cell, that is to say on the back side of the photovoltaic cell and more precisely on the side of the connection surface 2 of the crystallographically textured metallic substrate 1.
- the substrate Metallic texture crystallographically 1 is negatively connected (negative connection) and the connector 19 is positively connected (positive connection).
- the manufacturing method also includes a step of etching holes in the surface of the crystallographically textured metal substrate 1. Areas that are not to be etched are protected.
- the usable technique is that used to make "shadow-masks" of cathode ray tubes.
- Another step is to clean the textured surface ungraved by known techniques.
- silicon is deposited according to the method described above and a photovoltaic surface is produced.
- the holes which also contain silicon layers are then cleaned by sandblasting: it suffices to turn the crystallographically textured metal substrate 1 and to engrave using the crystallographically textured metal substrate 1 as a mask.
- the holes are insulated, simply screen the back of the photovoltaic cell without silicon deposition using a fragile polymer (which can be sanded). And then, using a nozzle, we sand a hole in the insulating zone.
- a conductor is screen printed on the indium-tin oxide thin film 16 which will fill the holes and send back, on the rear face of the photovoltaic cell, the electrons collected by the thin layer of indium-tin oxide 16.
- the cutting areas of the metal are sandblasted. Then, the metal is cut by conventional techniques. We then obtain back contact silicon photovoltaic cells that can be used as conventional wafers for the manufacture of photovoltaic modules.
- the invention also relates to a photovoltaic module comprising a series of photovoltaic cells 31 each in the form of a strip of dimension of the order of 20 mm wide, as shown in FIG.
- the photovoltaic cells of the prior art comprise substrates in the form of strips of great width, which are generally 15x15 cm platelets.
- the open circuit voltage of the silicon diode is of the order of 0.5 volts.
- One solution is to put in series several strips of photovoltaic cells 31 to reach the given voltage.
- 31 comprises a thin layer of polymer 21 and two thin layers of heat-activated glue (EVA) 22, 23, including a first 22 and a second 23 thin layers of heat-activatable glue.
- the first thin layer of heat-activated glue 22 is deposited on the thin polymer layer 21.
- the photovoltaic module also comprises a conductive layer 24 formed of a plurality of strip-shaped photovoltaic cells 31, and two copper strips 25 disposed at the respective ends of the conductive layer 24.
- the strip-shaped photovoltaic cells 31 and the two copper strips 25 are arranged between the first 22 and second 23 thin layers of heat-activatable glue, parallel to each other, inclined relative to the thin layers of heat-activatable glue 22, 23 and overlapping to form a row in a direction parallel to the thin films of heat-activatable glue 22, 23.
- the plurality of strip-shaped photovoltaic cells 31 and the two copper strips 25 form a series connection.
- Each strip-shaped photovoltaic cell 31 is in contact in the vicinity of each of its respective ends with another photovoltaic cell in the form of strip 31, except for the two strip-shaped photovoltaic cells 31 located at the end of the conductive layer 24. each of which is in contact with a single photovoltaic cell in the form of a strip 31 in the vicinity of one of their ends and with a copper strip 25 in the vicinity of the other of their ends.
- Each photovoltaic cell in the form of strip 31 comprises a front face 26 and a rear face 27, thus first 28 and second
- Each rear face 27 of a strip-shaped photovoltaic cell 31 is in contact with the first thin layer of heat-activated glue 22, close to its first end 28.
- Each rear face 27 of a photovoltaic cell in the form of a strip 31 is in contact with another photovoltaic cell in the form of a strip 31, near its second end 29.
- Each front face 26 of a strip-shaped photovoltaic cell 31 is in contact with another photovoltaic cell in the form of strip 31, near its first end 28.
- Each front face 26 of a band-shaped photovoltaic cell 31 is in contact also with the second thin layer of heat-activated glue 23, near its second end 29.
- the two copper strips 25 disposed at the respective ends of the conductive layer 24 allow the photovoltaic module to be connected laterally.
- the photovoltaic module also comprises a thin layer of polymethyl methacrylate (PMMA) deposited on the second thin layer of heat-activated glue 23.
- PMMA polymethyl methacrylate
- the thin layer of indium tin oxide 16 of the photovoltaic cells in the form of a strip 31 is transparent and conductive.
- the method of manufacturing the photovoltaic module is described below.
- a first layer of heat-activatable adhesive (EVA) 16 is deposited on the polymer strip 21.
- the photovoltaic cells in strip form 31 are deposited parallel on the polymer strip 21 which provides the electrical insulation.
- the polymer strip 21 may be polyimide or polymethyl methacrylate (PMMA), for example.
- the photovoltaic cells in the form of band 31 are overlapped for a distance of about 5 mm.
- the contacts made thus put the photovoltaic cells in the form of band 31 in series connection.
- the two copper strips 25 are arranged at the ends of the conductive layer 24 in overlap.
- the second thin layer of heat-activated glue (EVA) 23 is disposed on the surface of the conductive layer 24.
- the thin layer of polymethyl methacrylate (PMMA) is then applied to the surface of the second thin layer of heat-activated glue (EVA) 23.
- the assembly is finally secured by hot pressing (lamination).
- the method of manufacturing the photovoltaic modules comprises a step of cutting crystallographically textured device strips 13 to obtain crystallographically textured device strips 13 of smaller dimensions. This cutting step on the alloy roll occurs after the deposition of the various thin layers. The crystallographically textured device strips 13 are cut to the desired size, depending on the applications.
- Grooves 32 are etched in the crystallographically textured metal substrate strip 1 to facilitate subsequent cutting, as shown in FIG. 11. After deposition of silicon on the crystallographically textured metal substrate 1, the grooves 32 are sandblasted to eliminate shortages. circuits. The fasteners are then cut.
- the invention also relates to a method for depositing thin layers based on silicon on a crystallographically textured metal substrate 1, as described above.
- the deposition of silicon-based polycrystalline thin layers is carried out by a chemical vapor deposition (CVD) method and advantageously by a radiofrequency plasma-assisted chemical vapor deposition method (RFPECVD), the frequency applied to the plasma being 13.56 MHz.
- CVD chemical vapor deposition
- RFPECVD radiofrequency plasma-assisted chemical vapor deposition method
- the deposition may be performed on a crystallographically textured metal substrate 1 having undergone chemical etching or without chemical etching.
- the plasma temperature must be less than 300 ° C, preferably of the order of 200 ° C.
- the plasma advantageously comprises a gaseous mixture of silicon tetrafluoride (SiF 4 ), hydrogen and argon. It is also possible to replace the silicon tetrafluoride with silane (SiH 4 ).
- the oriented or epitaxial growth of thin layers of polycrystalline silicon on iron-nickel alloy is favored by the crystallographic texture of the alloy and by the conditions of the plasma.
- the best results are obtained by depositing from the dissociation of gaseous mixtures of SiF4, hydrogen and argon, with gas flow rates in cubic centimeters per minute of (1, 2, 40) (sccm), under a total pressure of 1800 mTorr, a radiofrequency power of 16 W and a substrate temperature 1 of about 200 ° C.
- the substrate temperature 1 should be below 300 ° C.
- the result is to obtain a thin layer of silicon 1 1 completely crystallized by direct deposition at low temperature (200 ° C) on a substrate 1 formed of an iron-nickel alloy comprising 41% nickel. Quantification of the crystalline fractions can be obtained by spectroscopic ellipsometry measurements.
- Table 2 gives the crystalline fractions of a polycrystalline silicon layer as well as the roughness layer (6 nm) for a silicon-based polycrystalline thin layer 1 1, obtained using spectroscopic ellipsometry measurements.
- the silicon layer 11 which has a thickness of 379 nm comprises a mixture of 57% of small crystals, 38% of large crystals and 5% of vacuum (this the latter being associated with the hydrogen incorporated in the layer and a low porosity probably at the grain boundaries).
- the source gases are SiF4, hydrogen and for doping gases, trimethylboron and phosphine.
- the reactive species produced in the plasma 33 will condense on the substrate 1 to form (atom after atom) a generally disordered thin layer.
- This technique allows the deposition of thin layers based on silicon 1 1 at low temperature (typically between 100 ° C and 300 ° C), on substrates 1 of large areas (up to 5 m 2 ).
- FIG. 12 represents a procedure for depositing silicon-based thin films on a crystallographically textured metal substrate 1, by chemical decomposition of the reactive gases in a low-temperature discharge plasma.
- Figure 13 shows an enlargement of the silicon growth zone on the polychstalline thin film 11 during the procedure shown in Figure 12. This example corresponds to growth from silane (SiH 3 radicals).
- the precursor gas dissociation products 34 "condense" on the crystallographically textured metallic substrate 1 forming a thin silicon-based thin layer 1 1.
- the precursor gas dissociation products 34 are nanochstals which can be used as elementary bricks for growth of the polycrystalline silicon layer.
- the plasma / solid interface is made on a thickness of material called growth zone 35 and involves reactions controlled by the temperature of the crystallographically textured metal substrate 1 and the energy provided by the ions and by atomic hydrogen (chemical annealing) .
- phenomena of physisorption 36, hydrogen abstraction 37, recombination (Si 2 H 6 ) 38 and desorption 39 occur.
- the deposition method according to the invention makes it possible to obtain a thin polycrystalline silicon-based layer 11 without any pollution of the silicon by the crystallographically-textured metal substrate 1.
- the conversion yields are also improved.
- the crystallographically textured metal substrate 1 makes it possible to promote the mechanisms of epitaxial or oriented growth with large grains of silicon, directly during the deposition phases.
- a crystallographically textured metal substrate (1) comprising a connection surface (2) and a surface (3) for receiving a thin film deposition, said crystallographically textured metal substrate (1) being made of an alloy having a crystalline system a face-centered cubic texture and a majority ⁇ 100 ⁇ ⁇ 001> cube crystallographic texture, the surface intended to accommodate the thin-layer deposition (3) comprising grains (4) predominantly having ⁇ 100 ⁇ crystallographic planes parallel to the surface (3); ) intended to receive a thin-layer deposit,
- the alloy is an iron-nickel alloy having a composition comprising, in% by weight relative to the total weight of said alloy: Ni> 30%,
- the percentages of nickel, chromium, copper, cobalt and manganese are such that the alloy satisfies the following condition:
- the alloy comprises up to 1% by weight of one or more deoxidizing elements chosen from silicon, magnesium, aluminum and calcium, the remainder of the elements constituting the alloy being iron and impurities.
- crystallographically textured metal substrate characterized in that the percentages of nickel, chromium, copper, cobalt and manganese are such that the alloy satisfies the following condition:
Abstract
Description
Claims
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/675,449 US9309592B2 (en) | 2007-08-31 | 2008-08-28 | Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method |
CA2698126A CA2698126C (fr) | 2007-08-31 | 2008-08-28 | Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procede de depot decouches minces |
BRPI0815837A BRPI0815837B1 (pt) | 2007-08-31 | 2008-08-28 | dispositivo texturizado cristalograficamente, célula fotovoltaica |
CN2008801135634A CN101842508B (zh) | 2007-08-31 | 2008-08-28 | 晶体织构化的金属衬底、晶体织构化的器件、包括这样的器件的电池和光伏模块以及薄层沉积方法 |
EA201000408A EA016990B1 (ru) | 2007-08-31 | 2008-08-28 | Кристаллографически текстурированная металлическая подложка, кристаллографически текстурированное устройство, фотогальванический элемент и фотогальванический модуль, содержащий такое устройство, и способ нанесения тонких слоев |
AU2008294609A AU2008294609B2 (en) | 2007-08-31 | 2008-08-28 | Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method |
JP2010522421A JP5592259B2 (ja) | 2007-08-31 | 2008-08-28 | 結晶学的にテクスチャード加工した金属基体、結晶学的にテクスチャード加工した装置、そのような装置を含む太陽電池モジュールおよび薄層付着方法 |
ZA2010/01452A ZA201001452B (en) | 2007-08-31 | 2010-02-26 | Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method |
IL205494A IL205494A (en) | 2007-08-31 | 2010-05-02 | Metallic substrate with crystallographic texture, device with crystallographic texture, cell and photovoltaic module including such a device and a method for thin layer settling |
Applications Claiming Priority (2)
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EP07301336.9 | 2007-08-31 | ||
EP07301336.9A EP2031082B1 (fr) | 2007-08-31 | 2007-08-31 | Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces |
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WO2009030865A2 true WO2009030865A2 (fr) | 2009-03-12 |
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US (1) | US9309592B2 (fr) |
EP (1) | EP2031082B1 (fr) |
JP (1) | JP5592259B2 (fr) |
KR (1) | KR101537305B1 (fr) |
CN (2) | CN101842508B (fr) |
AU (1) | AU2008294609B2 (fr) |
BR (1) | BRPI0815837B1 (fr) |
CA (1) | CA2698126C (fr) |
EA (1) | EA016990B1 (fr) |
ES (1) | ES2522582T3 (fr) |
HK (1) | HK1191985A1 (fr) |
IL (1) | IL205494A (fr) |
MY (1) | MY150031A (fr) |
PL (1) | PL2031082T3 (fr) |
PT (1) | PT2031082E (fr) |
WO (1) | WO2009030865A2 (fr) |
ZA (1) | ZA201001452B (fr) |
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JP5625765B2 (ja) * | 2010-11-05 | 2014-11-19 | Jfeスチール株式会社 | 太陽電池基板用クロム含有フェライト系鋼板 |
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RU2635982C1 (ru) * | 2016-10-28 | 2017-11-17 | Федеральное государственное бюджетное учреждение науки Институт физики металлов имени М.Н. Михеева Уральского отделения Российской академии наук (ИФМ УрО РАН) | Способ изготовления ленты из железоникелевого сплава Fe-(49-50,5) мас. % Ni, имеющей острую кубическую текстуру |
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US11479841B2 (en) * | 2017-06-19 | 2022-10-25 | Praxair S.T. Technology, Inc. | Thin and texturized films having fully uniform coverage of a non-smooth surface derived from an additive overlaying process |
CN109735778A (zh) * | 2019-01-31 | 2019-05-10 | 河南城建学院 | 一种高强度立方织构金属基带的制备方法 |
US11482417B2 (en) * | 2019-08-23 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing semiconductor structure |
CN110724922B (zh) * | 2019-10-31 | 2022-08-16 | 汕头大学 | 一种柔性衬底上晶体取向和极性可控的外延azo薄膜及其制备方法 |
CN111180538A (zh) * | 2019-12-31 | 2020-05-19 | 中威新能源(成都)有限公司 | 一种具有金字塔叠加结构的单晶硅片及制备方法 |
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US20100269887A1 (en) | 2010-10-28 |
IL205494A0 (en) | 2011-07-31 |
ZA201001452B (en) | 2010-11-24 |
JP5592259B2 (ja) | 2014-09-17 |
CN101842508B (zh) | 2013-05-01 |
CN101842508A (zh) | 2010-09-22 |
KR101537305B1 (ko) | 2015-07-22 |
PL2031082T3 (pl) | 2015-03-31 |
HK1191985A1 (en) | 2014-08-08 |
BRPI0815837A2 (pt) | 2018-01-09 |
CN103397247A (zh) | 2013-11-20 |
JP2010538448A (ja) | 2010-12-09 |
IL205494A (en) | 2013-08-29 |
CA2698126A1 (fr) | 2009-03-12 |
EA201000408A1 (ru) | 2010-10-29 |
MY150031A (en) | 2013-11-29 |
US9309592B2 (en) | 2016-04-12 |
BRPI0815837B1 (pt) | 2019-09-03 |
ES2522582T3 (es) | 2014-11-17 |
WO2009030865A3 (fr) | 2009-04-30 |
AU2008294609B2 (en) | 2012-09-13 |
EP2031082A1 (fr) | 2009-03-04 |
EP2031082B1 (fr) | 2014-09-03 |
KR20100080506A (ko) | 2010-07-08 |
PT2031082E (pt) | 2014-11-04 |
CN103397247B (zh) | 2015-09-02 |
CA2698126C (fr) | 2016-08-09 |
AU2008294609A1 (en) | 2009-03-12 |
EA016990B1 (ru) | 2012-08-30 |
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