WO2009030865A3 - Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaïque comprenant un tel dispositif et procede de depot de couches minces - Google Patents

Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaïque comprenant un tel dispositif et procede de depot de couches minces Download PDF

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Publication number
WO2009030865A3
WO2009030865A3 PCT/FR2008/051542 FR2008051542W WO2009030865A3 WO 2009030865 A3 WO2009030865 A3 WO 2009030865A3 FR 2008051542 W FR2008051542 W FR 2008051542W WO 2009030865 A3 WO2009030865 A3 WO 2009030865A3
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WO
WIPO (PCT)
Prior art keywords
alloy
crystallographically textured
thin layer
metal substrate
receiving
Prior art date
Application number
PCT/FR2008/051542
Other languages
English (en)
Other versions
WO2009030865A2 (fr
Inventor
Jean-Pierre Reyal
Pierre-Louis Reydet
Cabarrocas Pere Roca
Yassine Djeridane
Original Assignee
Arcelormittal Stainless And Ni
Ecole Polytech
Jean-Pierre Reyal
Pierre-Louis Reydet
Cabarrocas Pere Roca
Yassine Djeridane
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arcelormittal Stainless And Ni, Ecole Polytech, Jean-Pierre Reyal, Pierre-Louis Reydet, Cabarrocas Pere Roca, Yassine Djeridane filed Critical Arcelormittal Stainless And Ni
Priority to JP2010522421A priority Critical patent/JP5592259B2/ja
Priority to EA201000408A priority patent/EA016990B1/ru
Priority to CN2008801135634A priority patent/CN101842508B/zh
Priority to AU2008294609A priority patent/AU2008294609B2/en
Priority to BRPI0815837A priority patent/BRPI0815837B1/pt
Priority to CA2698126A priority patent/CA2698126C/fr
Priority to US12/675,449 priority patent/US9309592B2/en
Publication of WO2009030865A2 publication Critical patent/WO2009030865A2/fr
Publication of WO2009030865A3 publication Critical patent/WO2009030865A3/fr
Priority to ZA2010/01452A priority patent/ZA201001452B/en
Priority to IL205494A priority patent/IL205494A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12993—Surface feature [e.g., rough, mirror]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Abstract

L'invention concerne un substrat métallique texture cristallographiquement (1) comprenant une surface de connexion (2) et une surface (3) destinée à accueillir un dépôt de couche mince, ledit substrat métallique texture cristallographiquement (1) étant constitué d'un alliage présentant un système cristallin cubique à faces centrées et une texture cristallographique cube {100} <001> majoritaire, la surface destinée à accueillir le dépôt de couche mince (3) comprenant des grains (4) présentant majoritairement des plans cristallographiques {100} parallèles à la surface (3) destinée à accueillir un dépôt de couche mince. Selon l'invention, l'alliage est un alliage fer-nickel ayant une composition comprenant, en % en poids par rapport au poids total dudit alliage : Ni ≥ 30 %, Cu < 15 %, Cr ≤15 %, Co ≤12 %, Mn ≤ 5 %, S < 0,0007 %, P < 0,003 %, B < 0,0005 %, Pb < 0,0001 %, les pourcentages en nickel, chrome, cuivre, cobalt et manganèse étant tels que l'alliage satisfait la condition suivante : 34 % < (Ni + Cr + Cu/2 + Co/2 + Mn), et l'alliage comprend jusqu'à 1 % en poids d'un ou plusieurs éléments désoxydants choisis parmi le silicium, le magnésium, l'aluminium et le calcium, le reste des éléments constituant l'alliage étant du fer et des impuretés.
PCT/FR2008/051542 2007-08-31 2008-08-28 Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaïque comprenant un tel dispositif et procede de depot de couches minces WO2009030865A2 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2010522421A JP5592259B2 (ja) 2007-08-31 2008-08-28 結晶学的にテクスチャード加工した金属基体、結晶学的にテクスチャード加工した装置、そのような装置を含む太陽電池モジュールおよび薄層付着方法
EA201000408A EA016990B1 (ru) 2007-08-31 2008-08-28 Кристаллографически текстурированная металлическая подложка, кристаллографически текстурированное устройство, фотогальванический элемент и фотогальванический модуль, содержащий такое устройство, и способ нанесения тонких слоев
CN2008801135634A CN101842508B (zh) 2007-08-31 2008-08-28 晶体织构化的金属衬底、晶体织构化的器件、包括这样的器件的电池和光伏模块以及薄层沉积方法
AU2008294609A AU2008294609B2 (en) 2007-08-31 2008-08-28 Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method
BRPI0815837A BRPI0815837B1 (pt) 2007-08-31 2008-08-28 dispositivo texturizado cristalograficamente, célula fotovoltaica
CA2698126A CA2698126C (fr) 2007-08-31 2008-08-28 Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procede de depot decouches minces
US12/675,449 US9309592B2 (en) 2007-08-31 2008-08-28 Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method
ZA2010/01452A ZA201001452B (en) 2007-08-31 2010-02-26 Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method
IL205494A IL205494A (en) 2007-08-31 2010-05-02 Metallic substrate with crystallographic texture, device with crystallographic texture, cell and photovoltaic module including such a device and a method for thin layer settling

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07301336.9 2007-08-31
EP07301336.9A EP2031082B1 (fr) 2007-08-31 2007-08-31 Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces

Publications (2)

Publication Number Publication Date
WO2009030865A2 WO2009030865A2 (fr) 2009-03-12
WO2009030865A3 true WO2009030865A3 (fr) 2009-04-30

Family

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Family Applications (1)

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PCT/FR2008/051542 WO2009030865A2 (fr) 2007-08-31 2008-08-28 Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaïque comprenant un tel dispositif et procede de depot de couches minces

Country Status (17)

Country Link
US (1) US9309592B2 (fr)
EP (1) EP2031082B1 (fr)
JP (1) JP5592259B2 (fr)
KR (1) KR101537305B1 (fr)
CN (2) CN101842508B (fr)
AU (1) AU2008294609B2 (fr)
BR (1) BRPI0815837B1 (fr)
CA (1) CA2698126C (fr)
EA (1) EA016990B1 (fr)
ES (1) ES2522582T3 (fr)
HK (1) HK1191985A1 (fr)
IL (1) IL205494A (fr)
MY (1) MY150031A (fr)
PL (1) PL2031082T3 (fr)
PT (1) PT2031082E (fr)
WO (1) WO2009030865A2 (fr)
ZA (1) ZA201001452B (fr)

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CN109735778A (zh) * 2019-01-31 2019-05-10 河南城建学院 一种高强度立方织构金属基带的制备方法
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ES2522582T3 (es) 2014-11-17
AU2008294609A1 (en) 2009-03-12
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AU2008294609B2 (en) 2012-09-13
PT2031082E (pt) 2014-11-04
HK1191985A1 (en) 2014-08-08
US20100269887A1 (en) 2010-10-28
EA016990B1 (ru) 2012-08-30
EP2031082B1 (fr) 2014-09-03
JP2010538448A (ja) 2010-12-09
WO2009030865A2 (fr) 2009-03-12
IL205494A0 (en) 2011-07-31
EA201000408A1 (ru) 2010-10-29
PL2031082T3 (pl) 2015-03-31
CA2698126C (fr) 2016-08-09
CN103397247A (zh) 2013-11-20
BRPI0815837B1 (pt) 2019-09-03
CA2698126A1 (fr) 2009-03-12
CN101842508B (zh) 2013-05-01
ZA201001452B (en) 2010-11-24
EP2031082A1 (fr) 2009-03-04
BRPI0815837A2 (pt) 2018-01-09
IL205494A (en) 2013-08-29
US9309592B2 (en) 2016-04-12
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KR20100080506A (ko) 2010-07-08
CN101842508A (zh) 2010-09-22

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