WO2009037697A3 - Improved systems and methods for determining logical values of coupled flash memory cells - Google Patents

Improved systems and methods for determining logical values of coupled flash memory cells Download PDF

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Publication number
WO2009037697A3
WO2009037697A3 PCT/IL2008/001234 IL2008001234W WO2009037697A3 WO 2009037697 A3 WO2009037697 A3 WO 2009037697A3 IL 2008001234 W IL2008001234 W IL 2008001234W WO 2009037697 A3 WO2009037697 A3 WO 2009037697A3
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Prior art keywords
methods
flash memory
memory cells
logical values
improved systems
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PCT/IL2008/001234
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French (fr)
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WO2009037697A2 (en
Inventor
Hanan Weingarten
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Densbits Technologies Ltd.
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Application filed by Densbits Technologies Ltd. filed Critical Densbits Technologies Ltd.
Priority to US12/666,520 priority Critical patent/US8650352B2/en
Publication of WO2009037697A2 publication Critical patent/WO2009037697A2/en
Publication of WO2009037697A3 publication Critical patent/WO2009037697A3/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Abstract

Systems and methods for determining program levels useful for reading cells of a flash memory, such as but not limited to detecting charge levels for the cells, obtaining joint conditional probability densities for a plurality of combinations of program levels of the cells; and determining program levels for the cells respectively such that an aggregated joint probability value of the joint conditional probability densities is maximized.
PCT/IL2008/001234 2007-09-20 2008-09-17 Improved systems and methods for determining logical values of coupled flash memory cells WO2009037697A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/666,520 US8650352B2 (en) 2007-09-20 2008-09-17 Systems and methods for determining logical values of coupled flash memory cells

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US96020707P 2007-09-20 2007-09-20
US60/960,207 2007-09-20
US7146708P 2008-04-30 2008-04-30
US61/071,467 2008-04-30

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WO2009037697A2 WO2009037697A2 (en) 2009-03-26
WO2009037697A3 true WO2009037697A3 (en) 2010-03-04

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WO (1) WO2009037697A2 (en)

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