WO2009068763A3 - Procede, dispositif et systeme de mesure de deformations a l'echelle nanometrique - Google Patents
Procede, dispositif et systeme de mesure de deformations a l'echelle nanometrique Download PDFInfo
- Publication number
- WO2009068763A3 WO2009068763A3 PCT/FR2008/001302 FR2008001302W WO2009068763A3 WO 2009068763 A3 WO2009068763 A3 WO 2009068763A3 FR 2008001302 W FR2008001302 W FR 2008001302W WO 2009068763 A3 WO2009068763 A3 WO 2009068763A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- deformations
- zone
- measurement zone
- specimen
- nanoscale
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/295—Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
- H01J2237/1514—Prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Procédé de mesure de déformations à l'échelle nanométrique dans une portion (B) d'un échantillon cristallin, comportant les étapes consistant à: i: préparer un échantillon en forme de lame, comprenant une zone de mesure (B) et une zone de référence (A), supposée sans déformations et coplanaire avec la zone de mesure; ii: éclairer une face dudit échantillon par un faisceau (Fin) d'électrons; iii: superposer un faisceau (F1
B) du rayonnement diffracté par la zone de mesure (B) avec un faisceau (F1
A) du rayonnement diffracté par la zone de référence (A), de manière à faire interférer ces deux faisceaux; iv: mesurer la périodicité spatiale et l'orientation des franges de la figure d'interférence (FI); et v: en déduire une différence de paramètre cristallin et/ou d'orientation entre lesdites zones de référence et de mesure, indicative d'un état de déformation à l'échelle nanométrique de cette dernière. Dispositif et système pour la mise en œuvre d'un tel procédé.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08853292.4A EP2193360B1 (fr) | 2007-09-25 | 2008-09-17 | Procede et systeme de mesure de deformations a l'echelle nanometrique |
US12/680,078 US8502143B2 (en) | 2007-09-25 | 2008-09-17 | Method, device and system for measuring nanoscale deformations |
JP2010525386A JP5562243B2 (ja) | 2007-09-25 | 2008-09-17 | ナノスケール変形を測定する方法、デバイス及びシステム |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0706711A FR2921477B1 (fr) | 2007-09-25 | 2007-09-25 | Procede et systeme de mesure de deformations a l'echelle nanometrique |
FR0706711 | 2007-09-25 | ||
FR0801662 | 2008-03-26 | ||
FR0801662 | 2008-03-26 | ||
FR0802685 | 2008-05-19 | ||
FR0802685A FR2931261B1 (fr) | 2008-05-19 | 2008-05-19 | Dispositif pour holographie electronique |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2009068763A2 WO2009068763A2 (fr) | 2009-06-04 |
WO2009068763A3 true WO2009068763A3 (fr) | 2009-07-23 |
WO2009068763A4 WO2009068763A4 (fr) | 2009-09-11 |
Family
ID=40612870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2008/001302 WO2009068763A2 (fr) | 2007-09-25 | 2008-09-17 | Procede, dispositif et systeme de mesure de deformations a l'echelle nanometrique |
Country Status (4)
Country | Link |
---|---|
US (1) | US8502143B2 (fr) |
EP (1) | EP2193360B1 (fr) |
JP (1) | JP5562243B2 (fr) |
WO (1) | WO2009068763A2 (fr) |
Families Citing this family (18)
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EP2376965B1 (fr) * | 2008-12-15 | 2020-11-11 | Koninklijke Philips N.V. | Microscope à balayage |
JP5160520B2 (ja) * | 2009-09-25 | 2013-03-13 | 株式会社東芝 | 結晶格子モアレパターン取得方法および走査型顕微鏡 |
WO2011071015A1 (fr) * | 2009-12-11 | 2011-06-16 | 株式会社日立製作所 | Dispositif à double prisme à faisceau électronique et dispositif à faisceau électronique |
JP5736461B2 (ja) * | 2011-09-30 | 2015-06-17 | 株式会社日立製作所 | 電子顕微鏡および試料観察方法 |
JP2013096900A (ja) * | 2011-11-02 | 2013-05-20 | Jeol Ltd | 透過電子顕微鏡および透過電子顕微鏡像の観察方法 |
JP6173862B2 (ja) * | 2013-09-30 | 2017-08-02 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡 |
US9703211B2 (en) | 2014-10-16 | 2017-07-11 | University Of Utah Research Foundation | Sub-diffraction-limited patterning and imaging |
US10109453B2 (en) | 2015-03-18 | 2018-10-23 | Battelle Memorial Institute | Electron beam masks for compressive sensors |
US10170274B2 (en) * | 2015-03-18 | 2019-01-01 | Battelle Memorial Institute | TEM phase contrast imaging with image plane phase grating |
US9551674B1 (en) | 2015-10-30 | 2017-01-24 | GlobalFoundries, Inc. | Method of producing an un-distorted dark field strain map at high spatial resolution through dark field electron holography |
US10580614B2 (en) | 2016-04-29 | 2020-03-03 | Battelle Memorial Institute | Compressive scanning spectroscopy |
JP6718782B2 (ja) * | 2016-09-21 | 2020-07-08 | 日本電子株式会社 | 対物レンズおよび透過電子顕微鏡 |
US10295677B2 (en) | 2017-05-08 | 2019-05-21 | Battelle Memorial Institute | Systems and methods for data storage and retrieval |
JP2019007910A (ja) * | 2017-06-28 | 2019-01-17 | 株式会社東芝 | 結晶解析装置及び結晶解析方法 |
FR3073956B1 (fr) | 2017-11-22 | 2019-12-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Methode d'acquisition d'hologrammes par holographie electronique hors axe optique en mode precession |
JP7065503B2 (ja) * | 2018-03-22 | 2022-05-12 | 国立研究開発法人理化学研究所 | 干渉光学系ユニット,荷電粒子線干渉装置、及び荷電粒子線干渉像観察方法 |
US10784078B2 (en) * | 2018-10-31 | 2020-09-22 | Bruker Axs Gmbh | Electron diffraction imaging system for determining molecular structure and conformation |
CN112179762A (zh) * | 2020-03-05 | 2021-01-05 | 成都迪泰科技有限公司 | 双棱镜辅助测量金属丝的杨氏模量 |
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US5192867A (en) * | 1989-01-13 | 1993-03-09 | Hitachi, Ltd. | Electron optical measurement apparatus |
US5828724A (en) * | 1997-03-25 | 1998-10-27 | Advanced Technology Materials, Inc. | Photo-sensor fiber-optic stress analysis system |
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EP1508801A1 (fr) * | 2003-08-22 | 2005-02-23 | Obshchestvo s ogranichennoj otvetstvennostyu "Institut Rentgenovskoi Optiki" | Méthode pour la détermination des tensions elastiques dans un monocristal et appareil pour sa réalisation |
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2008
- 2008-09-17 JP JP2010525386A patent/JP5562243B2/ja active Active
- 2008-09-17 WO PCT/FR2008/001302 patent/WO2009068763A2/fr active Application Filing
- 2008-09-17 EP EP08853292.4A patent/EP2193360B1/fr active Active
- 2008-09-17 US US12/680,078 patent/US8502143B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
JP2010540895A (ja) | 2010-12-24 |
EP2193360A2 (fr) | 2010-06-09 |
US20100252735A1 (en) | 2010-10-07 |
JP5562243B2 (ja) | 2014-07-30 |
WO2009068763A4 (fr) | 2009-09-11 |
WO2009068763A2 (fr) | 2009-06-04 |
US8502143B2 (en) | 2013-08-06 |
EP2193360B1 (fr) | 2014-11-05 |
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