WO2009072101A3 - Apparatus and methods for generating row-specific reading thresholds in flash memory - Google Patents
Apparatus and methods for generating row-specific reading thresholds in flash memory Download PDFInfo
- Publication number
- WO2009072101A3 WO2009072101A3 PCT/IL2008/001231 IL2008001231W WO2009072101A3 WO 2009072101 A3 WO2009072101 A3 WO 2009072101A3 IL 2008001231 W IL2008001231 W IL 2008001231W WO 2009072101 A3 WO2009072101 A3 WO 2009072101A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- threshold
- row
- specific reading
- logical page
- reading
- Prior art date
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
Abstract
A method for generating a set of at least one row-specific reading threshold for reading at least portions of pages of data within an erase sector of a flash memory device, the method comprising predetermining at least one initial reading threshold; performing the following steps for at least one current logical page: generating bit error characterizing information regarding at least one corresponding bit error within at least one cell representing at least a logical portion of at least one successfully reconstructed previous logical page; and computing at least one row-specific reading threshold based on said bit error characterizing information and on a previous threshold initially comprising said initial threshold and subsequently comprising a row-specific reading threshold computed for a successfully reconstructed previous logical page; and reading at least a portion of said current logical page using said at least one row-specific reading threshold.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/596,450 US8453022B2 (en) | 2007-12-05 | 2008-09-17 | Apparatus and methods for generating row-specific reading thresholds in flash memory |
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
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US99678207P | 2007-12-05 | 2007-12-05 | |
US60/996,782 | 2007-12-05 | ||
US680508P | 2008-01-31 | 2008-01-31 | |
US61/006,805 | 2008-01-31 | ||
US6485308P | 2008-03-31 | 2008-03-31 | |
US61/064,853 | 2008-03-31 | ||
US7146508P | 2008-04-30 | 2008-04-30 | |
US61/071,465 | 2008-04-30 | ||
US12960808P | 2008-07-08 | 2008-07-08 | |
US61/129,608 | 2008-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009072101A2 WO2009072101A2 (en) | 2009-06-11 |
WO2009072101A3 true WO2009072101A3 (en) | 2010-03-04 |
Family
ID=40718290
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IL2008/001232 WO2009072102A2 (en) | 2007-12-05 | 2008-09-17 | System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices |
PCT/IL2008/001231 WO2009072101A2 (en) | 2007-12-05 | 2008-09-17 | Apparatus and methods for generating row-specific reading thresholds in flash memory |
PCT/IL2008/001230 WO2009072100A2 (en) | 2007-12-05 | 2008-09-17 | Systems and methods for temporarily retiring memory portions |
PCT/IL2008/001239 WO2009072104A2 (en) | 2007-12-05 | 2008-09-17 | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IL2008/001232 WO2009072102A2 (en) | 2007-12-05 | 2008-09-17 | System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IL2008/001230 WO2009072100A2 (en) | 2007-12-05 | 2008-09-17 | Systems and methods for temporarily retiring memory portions |
PCT/IL2008/001239 WO2009072104A2 (en) | 2007-12-05 | 2008-09-17 | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith |
Country Status (2)
Country | Link |
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US (6) | US8453022B2 (en) |
WO (4) | WO2009072102A2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
US20130238839A1 (en) | 2013-09-12 |
WO2009072104A2 (en) | 2009-06-11 |
WO2009072100A3 (en) | 2010-03-04 |
WO2009072102A3 (en) | 2010-03-04 |
US20130080691A1 (en) | 2013-03-28 |
US9104550B2 (en) | 2015-08-11 |
US8843698B2 (en) | 2014-09-23 |
US20100064096A1 (en) | 2010-03-11 |
US8453022B2 (en) | 2013-05-28 |
WO2009072102A2 (en) | 2009-06-11 |
US8341335B2 (en) | 2012-12-25 |
US20100146191A1 (en) | 2010-06-10 |
US20100180073A1 (en) | 2010-07-15 |
WO2009072101A2 (en) | 2009-06-11 |
WO2009072104A3 (en) | 2010-03-04 |
WO2009072104A8 (en) | 2009-09-03 |
US8321625B2 (en) | 2012-11-27 |
WO2009072100A2 (en) | 2009-06-11 |
US20100131809A1 (en) | 2010-05-27 |
US8751726B2 (en) | 2014-06-10 |
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