WO2009072104A8 - Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith - Google Patents
Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith Download PDFInfo
- Publication number
- WO2009072104A8 WO2009072104A8 PCT/IL2008/001239 IL2008001239W WO2009072104A8 WO 2009072104 A8 WO2009072104 A8 WO 2009072104A8 IL 2008001239 W IL2008001239 W IL 2008001239W WO 2009072104 A8 WO2009072104 A8 WO 2009072104A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- determining
- physical
- physical levels
- cell
- memory device
- Prior art date
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
Abstract
A method for determining thresholds useful for converting cell physical levels into cell logical values in an array of digital memory cells storing physical levels which diminish over time, the method comprising determining extent of deterioration of the physical levels and determining thresholds accordingly for at least an individual cell in said array; and reading the individual cell including reading a physical level in the cell and converting the physical level into a logical value using the thresholds, wherein the determining comprises storing predefined physical levels rather than data-determined physical levels in each of a plurality of cells and computing extent of deterioration by determining deterioration of the predefined physical levels.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/667,042 US8321625B2 (en) | 2007-12-05 | 2008-09-17 | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith |
US13/681,246 US9104550B2 (en) | 2007-12-05 | 2012-11-19 | Physical levels deterioration based determination of thresholds useful for converting cell physical levels into cell logical values in an array of digital memory cells |
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99678207P | 2007-12-05 | 2007-12-05 | |
US60/996,782 | 2007-12-05 | ||
US680508P | 2008-01-31 | 2008-01-31 | |
US61/006,805 | 2008-01-31 | ||
US6485308P | 2008-03-31 | 2008-03-31 | |
US61/064,853 | 2008-03-31 | ||
US7146508P | 2008-04-30 | 2008-04-30 | |
US61/071,465 | 2008-04-30 | ||
US12960808P | 2008-07-08 | 2008-07-08 | |
US61/129,608 | 2008-07-08 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/667,042 A-371-Of-International US8321625B2 (en) | 2007-12-05 | 2008-09-17 | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith |
US13/681,246 Continuation US9104550B2 (en) | 2007-12-05 | 2012-11-19 | Physical levels deterioration based determination of thresholds useful for converting cell physical levels into cell logical values in an array of digital memory cells |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2009072104A2 WO2009072104A2 (en) | 2009-06-11 |
WO2009072104A8 true WO2009072104A8 (en) | 2009-09-03 |
WO2009072104A3 WO2009072104A3 (en) | 2010-03-04 |
Family
ID=40718290
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IL2008/001232 WO2009072102A2 (en) | 2007-12-05 | 2008-09-17 | System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices |
PCT/IL2008/001231 WO2009072101A2 (en) | 2007-12-05 | 2008-09-17 | Apparatus and methods for generating row-specific reading thresholds in flash memory |
PCT/IL2008/001230 WO2009072100A2 (en) | 2007-12-05 | 2008-09-17 | Systems and methods for temporarily retiring memory portions |
PCT/IL2008/001239 WO2009072104A2 (en) | 2007-12-05 | 2008-09-17 | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IL2008/001232 WO2009072102A2 (en) | 2007-12-05 | 2008-09-17 | System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices |
PCT/IL2008/001231 WO2009072101A2 (en) | 2007-12-05 | 2008-09-17 | Apparatus and methods for generating row-specific reading thresholds in flash memory |
PCT/IL2008/001230 WO2009072100A2 (en) | 2007-12-05 | 2008-09-17 | Systems and methods for temporarily retiring memory portions |
Country Status (2)
Country | Link |
---|---|
US (6) | US8453022B2 (en) |
WO (4) | WO2009072102A2 (en) |
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WO2009072100A2 (en) | 2009-06-11 |
US20100131809A1 (en) | 2010-05-27 |
US8751726B2 (en) | 2014-06-10 |
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