WO2009095902A3 - Systems and methods for handling immediate data errors in flash memory - Google Patents

Systems and methods for handling immediate data errors in flash memory Download PDF

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Publication number
WO2009095902A3
WO2009095902A3 PCT/IL2008/001237 IL2008001237W WO2009095902A3 WO 2009095902 A3 WO2009095902 A3 WO 2009095902A3 IL 2008001237 W IL2008001237 W IL 2008001237W WO 2009095902 A3 WO2009095902 A3 WO 2009095902A3
Authority
WO
WIPO (PCT)
Prior art keywords
logical data
flash memory
systems
methods
known errors
Prior art date
Application number
PCT/IL2008/001237
Other languages
French (fr)
Other versions
WO2009095902A2 (en
Inventor
Hanan Weingarten
Shmuel Levy
Original Assignee
Densbits Technologies Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Densbits Technologies Ltd. filed Critical Densbits Technologies Ltd.
Priority to US12/596,439 priority Critical patent/US8365040B2/en
Publication of WO2009095902A2 publication Critical patent/WO2009095902A2/en
Publication of WO2009095902A3 publication Critical patent/WO2009095902A3/en
Priority to US13/751,580 priority patent/US8762800B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3463—Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3413—Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Abstract

A flash memory system comprising temporary memory, writing apparatus for writing first logical data from the temporary memory into flash memory cells having at least two levels, thereby to generate a physical representation of the first logical data including known errors, reading apparatus for reading the physical representation from the cells, thereby to generate, and store in the temporary memory, second logical data which if read immediately is identical to the first logical data other than the known errors; and controlling apparatus controlling the writing apparatus and the reading apparatus and including known error ID apparatus operative to identify the known errors by comparing the first logical data to second logical data read immediately after the physical representation is generated, to store information characterizing the known errors and to use the information, when the second logical data is next read, to correct the known errors.
PCT/IL2008/001237 2007-09-20 2008-09-17 Systems and methods for handling immediate data errors in flash memory WO2009095902A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/596,439 US8365040B2 (en) 2007-09-20 2008-09-17 Systems and methods for handling immediate data errors in flash memory
US13/751,580 US8762800B1 (en) 2008-01-31 2013-01-28 Systems and methods for handling immediate data errors in flash memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US680608P 2008-01-31 2008-01-31
US61/006,806 2008-01-31
US7148608P 2008-05-01 2008-05-01
US61/071,486 2008-05-01

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/596,439 A-371-Of-International US8365040B2 (en) 2007-09-20 2008-09-17 Systems and methods for handling immediate data errors in flash memory
US13/751,580 Continuation US8762800B1 (en) 2008-01-31 2013-01-28 Systems and methods for handling immediate data errors in flash memory

Publications (2)

Publication Number Publication Date
WO2009095902A2 WO2009095902A2 (en) 2009-08-06
WO2009095902A3 true WO2009095902A3 (en) 2010-03-04

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PCT/IL2008/001237 WO2009095902A2 (en) 2007-09-20 2008-09-17 Systems and methods for handling immediate data errors in flash memory

Country Status (2)

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US (2) US8365040B2 (en)
WO (1) WO2009095902A2 (en)

Families Citing this family (148)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007132453A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Distortion estimation and cancellation in memory devices
WO2007132457A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
WO2007132456A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
US7821826B2 (en) 2006-10-30 2010-10-26 Anobit Technologies, Ltd. Memory cell readout using successive approximation
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
WO2008068747A2 (en) 2006-12-03 2008-06-12 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
WO2008111058A2 (en) 2007-03-12 2008-09-18 Anobit Technologies Ltd. Adaptive estimation of memory cell read thresholds
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8650352B2 (en) * 2007-09-20 2014-02-11 Densbits Technologies Ltd. Systems and methods for determining logical values of coupled flash memory cells
WO2009095902A2 (en) 2008-01-31 2009-08-06 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
WO2009050703A2 (en) 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
WO2009053961A2 (en) 2007-10-25 2009-04-30 Densbits Technologies Ltd. Systems and methods for multiple coding rates in flash devices
WO2009063450A2 (en) 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
WO2009072105A2 (en) * 2007-12-05 2009-06-11 Densbits Technologies Ltd. A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications
US8335977B2 (en) 2007-12-05 2012-12-18 Densbits Technologies Ltd. Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells
US8453022B2 (en) 2007-12-05 2013-05-28 Densbits Technologies Ltd. Apparatus and methods for generating row-specific reading thresholds in flash memory
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8276051B2 (en) 2007-12-12 2012-09-25 Densbits Technologies Ltd. Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications
WO2009074978A2 (en) 2007-12-12 2009-06-18 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
US8327246B2 (en) 2007-12-18 2012-12-04 Densbits Technologies Ltd. Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
WO2009118720A2 (en) * 2008-03-25 2009-10-01 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8332725B2 (en) 2008-08-20 2012-12-11 Densbits Technologies Ltd. Reprogramming non volatile memory portions
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US8458574B2 (en) 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8566510B2 (en) 2009-05-12 2013-10-22 Densbits Technologies Ltd. Systems and method for flash memory management
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8305812B2 (en) * 2009-08-26 2012-11-06 Densbits Technologies Ltd. Flash memory module and method for programming a page of flash memory cells
US9330767B1 (en) 2009-08-26 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory module and method for programming a page of flash memory cells
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
US8868821B2 (en) 2009-08-26 2014-10-21 Densbits Technologies Ltd. Systems and methods for pre-equalization and code design for a flash memory
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8730729B2 (en) 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US8626988B2 (en) * 2009-11-19 2014-01-07 Densbits Technologies Ltd. System and method for uncoded bit error rate equalization via interleaving
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US9037777B2 (en) 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
US8607124B2 (en) * 2009-12-24 2013-12-10 Densbits Technologies Ltd. System and method for setting a flash memory cell read threshold
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
US8700970B2 (en) * 2010-02-28 2014-04-15 Densbits Technologies Ltd. System and method for multi-dimensional decoding
US8516274B2 (en) 2010-04-06 2013-08-20 Densbits Technologies Ltd. Method, system and medium for analog encryption in a flash memory
US8527840B2 (en) 2010-04-06 2013-09-03 Densbits Technologies Ltd. System and method for restoring damaged data programmed on a flash device
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
KR101438072B1 (en) 2010-04-15 2014-09-03 라모트 앳 텔-아비브 유니버시티 리미티드 Multiple programming of flash memory without erase
US9021177B2 (en) 2010-04-29 2015-04-28 Densbits Technologies Ltd. System and method for allocating and using spare blocks in a flash memory
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8539311B2 (en) 2010-07-01 2013-09-17 Densbits Technologies Ltd. System and method for data recovery in multi-level cell memories
US8468431B2 (en) 2010-07-01 2013-06-18 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
US8467249B2 (en) 2010-07-06 2013-06-18 Densbits Technologies Ltd. Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8493781B1 (en) 2010-08-12 2013-07-23 Apple Inc. Interference mitigation using individual word line erasure operations
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US8508995B2 (en) 2010-09-15 2013-08-13 Densbits Technologies Ltd. System and method for adjusting read voltage thresholds in memories
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
JP2012089085A (en) * 2010-10-22 2012-05-10 Toshiba Corp Semiconductor memory device and semiconductor memory system
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
US8850100B2 (en) 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US10079068B2 (en) 2011-02-23 2018-09-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Devices and method for wear estimation based memory management
US8693258B2 (en) 2011-03-17 2014-04-08 Densbits Technologies Ltd. Obtaining soft information using a hard interface
US8990665B1 (en) 2011-04-06 2015-03-24 Densbits Technologies Ltd. System, method and computer program product for joint search of a read threshold and soft decoding
US9372792B1 (en) 2011-05-12 2016-06-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US9501392B1 (en) 2011-05-12 2016-11-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of a non-volatile memory module
US9396106B2 (en) 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US8996790B1 (en) 2011-05-12 2015-03-31 Densbits Technologies Ltd. System and method for flash memory management
US9195592B1 (en) 2011-05-12 2015-11-24 Densbits Technologies Ltd. Advanced management of a non-volatile memory
US9110785B1 (en) 2011-05-12 2015-08-18 Densbits Technologies Ltd. Ordered merge of data sectors that belong to memory space portions
US8732557B2 (en) 2011-05-31 2014-05-20 Micron Technology, Inc. Data protection across multiple memory blocks
US8667211B2 (en) 2011-06-01 2014-03-04 Densbits Technologies Ltd. System and method for managing a non-volatile memory
US8588003B1 (en) 2011-08-01 2013-11-19 Densbits Technologies Ltd. System, method and computer program product for programming and for recovering from a power failure
US8553468B2 (en) 2011-09-21 2013-10-08 Densbits Technologies Ltd. System and method for managing erase operations in a non-volatile memory
US8947941B2 (en) 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US8996788B2 (en) 2012-02-09 2015-03-31 Densbits Technologies Ltd. Configurable flash interface
US8996793B1 (en) 2012-04-24 2015-03-31 Densbits Technologies Ltd. System, method and computer readable medium for generating soft information
US9003224B2 (en) * 2012-04-25 2015-04-07 Western Digital Technologies, Inc. Managing unreliable memory in data storage systems
US8838937B1 (en) 2012-05-23 2014-09-16 Densbits Technologies Ltd. Methods, systems and computer readable medium for writing and reading data
US8879325B1 (en) 2012-05-30 2014-11-04 Densbits Technologies Ltd. System, method and computer program product for processing read threshold information and for reading a flash memory module
US9921954B1 (en) 2012-08-27 2018-03-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and system for split flash memory management between host and storage controller
US9047988B2 (en) * 2012-11-20 2015-06-02 International Business Machines Corporation Flash interface error injector
US9368225B1 (en) 2012-11-21 2016-06-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Determining read thresholds based upon read error direction statistics
US8996961B2 (en) 2012-12-11 2015-03-31 Seagate Technology Llc Error correction code rate management for nonvolatile memory
US9069659B1 (en) 2013-01-03 2015-06-30 Densbits Technologies Ltd. Read threshold determination using reference read threshold
JP2014182847A (en) * 2013-03-18 2014-09-29 Toshiba Corp Error correction method, error correction device, and information storage device
US9136876B1 (en) 2013-06-13 2015-09-15 Densbits Technologies Ltd. Size limited multi-dimensional decoding
WO2015005636A1 (en) * 2013-07-08 2015-01-15 주식회사 윌러스표준기술연구소 Memory system and data processing method for memory
US9413491B1 (en) 2013-10-08 2016-08-09 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for multiple dimension decoding and encoding a message
US9786388B1 (en) 2013-10-09 2017-10-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9348694B1 (en) 2013-10-09 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9397706B1 (en) 2013-10-09 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for irregular multiple dimension decoding and encoding
US9536612B1 (en) 2014-01-23 2017-01-03 Avago Technologies General Ip (Singapore) Pte. Ltd Digital signaling processing for three dimensional flash memory arrays
US10120792B1 (en) 2014-01-29 2018-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Programming an embedded flash storage device
US9542262B1 (en) 2014-05-29 2017-01-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Error correction
US9892033B1 (en) 2014-06-24 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of memory units
US9584159B1 (en) 2014-07-03 2017-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Interleaved encoding
US9972393B1 (en) 2014-07-03 2018-05-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Accelerating programming of a flash memory module
US9449702B1 (en) 2014-07-08 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Power management
US9524211B1 (en) 2014-11-18 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Codeword management
US10305515B1 (en) 2015-02-02 2019-05-28 Avago Technologies International Sales Pte. Limited System and method for encoding using multiple linear feedback shift registers
US10628255B1 (en) 2015-06-11 2020-04-21 Avago Technologies International Sales Pte. Limited Multi-dimensional decoding
US9851921B1 (en) 2015-07-05 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory chip processing
US9954558B1 (en) 2016-03-03 2018-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Fast decoding of data stored in a flash memory
TWI690847B (en) * 2018-11-20 2020-04-11 樹德科技大學 True random number generators and true random number generation method
US10971199B2 (en) 2019-06-20 2021-04-06 Sandisk Technologies Llc Microcontroller for non-volatile memory with combinational logic
US11507498B2 (en) 2020-03-05 2022-11-22 Sandisk Technologies Llc Pre-computation of memory core control signals
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040153817A1 (en) * 1996-10-24 2004-08-05 Micron Technologies, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US20070109858A1 (en) * 2000-12-28 2007-05-17 Conley Kevin M Novel Method and Structure for Efficient Data Verification Operation for Non-Volatile Memories
US20070223277A1 (en) * 1999-06-28 2007-09-27 Kabushiki Kaisha Toshiba Flash memory

Family Cites Families (292)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430701A (en) 1981-08-03 1984-02-07 International Business Machines Corporation Method and apparatus for a hierarchical paging storage system
US4463375A (en) 1982-09-07 1984-07-31 The Board Of Trustees Of The Leland Standford Junior University Multiple-measurement noise-reducing system
US4589084A (en) 1983-05-16 1986-05-13 Rca Corporation Apparatus for symmetrically truncating two's complement binary signals as for use with interleaved quadrature signals
US4584686A (en) 1983-12-22 1986-04-22 Optical Storage International Reed-Solomon error correction apparatus
US4777589A (en) 1985-06-28 1988-10-11 Hewlett-Packard Company Direct input/output in a virtual memory system
US4866716A (en) 1987-05-15 1989-09-12 Digital Equipment Corporation Real-time BCH error correction code decoding mechanism
US5077737A (en) 1989-08-18 1991-12-31 Micron Technology, Inc. Method and apparatus for storing digital data in off-specification dynamic random access memory devices
ATE116081T1 (en) 1989-08-24 1995-01-15 Philips Nv METHOD AND DEVICE FOR DECODING PROTECTED CODE WORDS BY A NON-BINARY BCH CODE AGAINST AT LEAST ONE SYMBOL ERROR.
US5003597A (en) 1989-12-21 1991-03-26 Xerox Corporation Method and apparatus for data encryption
US5663901A (en) 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
JP3229345B2 (en) 1991-09-11 2001-11-19 ローム株式会社 Non-volatile IC memory
US5657332A (en) 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5740395A (en) 1992-10-30 1998-04-14 Intel Corporation Method and apparatus for cleaning up a solid state memory disk storing floating sector data
DE4410060B4 (en) 1993-04-08 2006-02-09 Hewlett-Packard Development Co., L.P., Houston Translating device for converting a virtual memory address into a physical memory address
US5623620A (en) 1993-06-30 1997-04-22 Intel Corporation Special test modes for a page buffer shared resource in a memory device
US5592641A (en) 1993-06-30 1997-01-07 Intel Corporation Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status
US5640529A (en) 1993-07-29 1997-06-17 Intel Corporation Method and system for performing clean-up of a solid state disk during host command execution
JPH08137763A (en) 1994-11-04 1996-05-31 Fujitsu Ltd Flash memory controller
US5579356A (en) 1995-07-28 1996-11-26 Micron Quantum Devices, Inc. Timer circuit with programmable decode circuitry
DE69516402T2 (en) 1995-07-31 2000-11-02 St Microelectronics Srl Mixed serial parallel dichotomic reading method for non-volatile multilevel memory cells and reading circuit using such a method
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5778430A (en) 1996-04-19 1998-07-07 Eccs, Inc. Method and apparatus for computer disk cache management
US5968198A (en) 1996-08-16 1999-10-19 Ericsson, Inc. Decoder utilizing soft information output to minimize error rates
US5956473A (en) 1996-11-25 1999-09-21 Macronix International Co., Ltd. Method and system for managing a flash memory mass storage system
US5745418A (en) 1996-11-25 1998-04-28 Macronix International Co., Ltd. Flash memory mass storage system
US5982659A (en) 1996-12-23 1999-11-09 Lsi Logic Corporation Memory cell capable of storing more than two logic states by using different via resistances
DE19880311B3 (en) 1997-02-12 2017-06-22 Hyundai Electronics America Inc. Non-volatile memory structure
US6094465A (en) 1997-03-21 2000-07-25 Qualcomm Incorporated Method and apparatus for performing decoding of CRC outer concatenated codes
US5920578A (en) 1997-04-23 1999-07-06 Cirrus Logic, Inc. Method and apparatus for efficiently processing a multi-dimensional code
JP3565687B2 (en) 1997-08-06 2004-09-15 沖電気工業株式会社 Semiconductor memory device and control method thereof
US5926409A (en) 1997-09-05 1999-07-20 Information Storage Devices, Inc. Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application
US5909449A (en) 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US6199188B1 (en) 1997-10-07 2001-03-06 Quantum Corporation System for finding roots of degree three and degree four error locator polynomials over GF(2M)
US6279133B1 (en) 1997-12-31 2001-08-21 Kawasaki Steel Corporation Method and apparatus for significantly improving the reliability of multilevel memory architecture
US6038634A (en) 1998-02-02 2000-03-14 International Business Machines Corporation Intra-unit block addressing system for memory
JP3165099B2 (en) 1998-02-05 2001-05-14 インターナショナル・ビジネス・マシーンズ・コーポレ−ション Error correction method and system
KR100297986B1 (en) 1998-03-13 2001-10-25 김영환 Wear levelling system of flash memory cell array and wear levelling method thereof
US6209114B1 (en) 1998-05-29 2001-03-27 Texas Instruments Incorporated Efficient hardware implementation of chien search polynomial reduction in reed-solomon decoding
JP2000067574A (en) 1998-08-21 2000-03-03 Mitsubishi Electric Corp Semiconductor memory
US6192497B1 (en) 1998-08-27 2001-02-20 Adaptec, Inc. Parallel Chien search circuit
US6704902B1 (en) 1998-09-07 2004-03-09 Sony Corporation Decoding system for error correction code
US6637002B1 (en) 1998-10-21 2003-10-21 Maxtor Corporation Decoder for error correcting block codes
US6292918B1 (en) 1998-11-05 2001-09-18 Qualcomm Incorporated Efficient iterative decoding
JP3410036B2 (en) 1999-02-03 2003-05-26 シャープ株式会社 Method of writing information to nonvolatile semiconductor memory device
US6374383B1 (en) 1999-06-07 2002-04-16 Maxtor Corporation Determining error locations using error correction codes
US20080209114A1 (en) 1999-08-04 2008-08-28 Super Talent Electronics, Inc. Reliability High Endurance Non-Volatile Memory Device with Zone-Based Non-Volatile Memory File System
US6278633B1 (en) 1999-11-05 2001-08-21 Multi Level Memory Technology High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations
US6560747B1 (en) 1999-11-10 2003-05-06 Maxtor Corporation Error counting mechanism
AU2578001A (en) 1999-12-10 2001-06-18 Broadcom Corporation Apparatus and method for reducing precision of data
US8108590B2 (en) 2000-01-06 2012-01-31 Super Talent Electronics, Inc. Multi-operation write aggregator using a page buffer and a scratch flash block in each of multiple channels of a large array of flash memory to reduce block wear
US6532556B1 (en) 2000-01-27 2003-03-11 Multi Level Memory Technology Data management for multi-bit-per-cell memories
US6259627B1 (en) 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
US6564306B2 (en) * 2000-04-25 2003-05-13 Hewlett-Packard Development Company, L.P. Apparatus and method for performing speculative cache directory tag updates
US6301151B1 (en) 2000-08-09 2001-10-09 Information Storage Devices, Inc. Adaptive programming method and apparatus for flash memory analog storage
US6772274B1 (en) 2000-09-13 2004-08-03 Lexar Media, Inc. Flash memory system and method implementing LBA to PBA correlation within flash memory array
KR100370239B1 (en) 2000-10-25 2003-01-29 삼성전자 주식회사 Memory device for applying to high speed block pipelined reed-solomon decoder and method of memory access and reed-solomon decoder having the memory device
US6507357B2 (en) * 2000-11-29 2003-01-14 Applied Minds, Inc. Method and apparatus for maintaining eye contact in teleconferencing using reflected images
US7170997B2 (en) 2000-12-07 2007-01-30 Cryptico A/S Method of generating pseudo-random numbers in an electronic device, and a method of encrypting and decrypting electronic data
TW539950B (en) 2000-12-28 2003-07-01 Sony Corp Data recording device and data write method for flash memory
KR100381957B1 (en) * 2001-01-04 2003-04-26 삼성전자주식회사 Nonvolatile semiconductor memory device and data input/output control method thereof
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US20030105620A1 (en) 2001-01-29 2003-06-05 Matt Bowen System, method and article of manufacture for interface constructs in a programming language capable of programming hardware architetures
US6938144B2 (en) 2001-03-22 2005-08-30 Matsushita Electric Industrial Co., Ltd. Address conversion unit for memory device
US6898614B2 (en) 2001-03-29 2005-05-24 Koninklijke Philips Electronics N.V. Round-off algorithm without bias for 2's complement data
US20030192007A1 (en) 2001-04-19 2003-10-09 Miller David H. Code-programmable field-programmable architecturally-systolic Reed-Solomon BCH error correction decoder integrated circuit and error correction decoding method
US6792569B2 (en) 2001-04-24 2004-09-14 International Business Machines Corporation Root solver and associated method for solving finite field polynomial equations
US6370061B1 (en) 2001-06-19 2002-04-09 Advanced Micro Devices, Inc. Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
US6532169B1 (en) 2001-06-26 2003-03-11 Cypress Semiconductor Corp. SONOS latch and application
US6961890B2 (en) 2001-08-16 2005-11-01 Hewlett-Packard Development Company, L.P. Dynamic variable-length error correction code
US6678785B2 (en) 2001-09-28 2004-01-13 M-Systems Flash Disk Pioneers Ltd. Flash management system using only sequential write
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6839007B2 (en) 2001-11-01 2005-01-04 Qualcomm Incorporated Inner coding of higher priority data within a digital message
US6915477B2 (en) 2001-12-28 2005-07-05 Lucent Technologies Inc. Delay sensitive adaptive quality control loop for rate adaptation
US6621739B2 (en) 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
US6542407B1 (en) 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US6675281B1 (en) 2002-01-22 2004-01-06 Icreate Technologies Corporation Distributed mapping scheme for mass storage system
KR100439507B1 (en) 2002-03-18 2004-07-09 삼성전기주식회사 Data operating method in flash memory card system of high-capacity
KR20030078453A (en) 2002-03-29 2003-10-08 주식회사 엘지이아이 Method and apparatus for encrypting and decrypting data in wireless lan
US7010739B1 (en) 2002-04-11 2006-03-07 Marvell International Ltd. Error evaluator for inversionless Berlekamp-Massey algorithm in Reed-Solomon decoders
US6781910B2 (en) 2002-05-17 2004-08-24 Hewlett-Packard Development Company, L.P. Small area magnetic memory devices
US6751766B2 (en) 2002-05-20 2004-06-15 Sandisk Corporation Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
JP2003346484A (en) 2002-05-23 2003-12-05 Mitsubishi Electric Corp Nonvolatile semiconductor storage device
JP4678760B2 (en) 2002-06-21 2011-04-27 マイクロン テクノロジー， インク． Array of memory cells, memory array, memory device, and method of forming a memory array having multi-state cells
US20040015771A1 (en) 2002-07-16 2004-01-22 Menahem Lasser Error correction for non-volatile memory
KR100484147B1 (en) 2002-07-26 2005-04-18 삼성전자주식회사 Flash memory management method
US6781877B2 (en) 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US6831865B2 (en) 2002-10-28 2004-12-14 Sandisk Corporation Maintaining erase counts in non-volatile storage systems
US6891768B2 (en) 2002-11-13 2005-05-10 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
US7028247B2 (en) 2002-12-25 2006-04-11 Faraday Technology Corp. Error correction code circuit with reduced hardware complexity
US7292365B2 (en) 2003-01-15 2007-11-06 Xerox Corporation Methods and systems for determining distribution mean level without histogram measurement
US7206992B2 (en) 2003-03-04 2007-04-17 Broadcom Corporation Decoding a received BCH encoded signal
JP4256198B2 (en) 2003-04-22 2009-04-22 株式会社東芝 Data storage system
US7203874B2 (en) 2003-05-08 2007-04-10 Micron Technology, Inc. Error detection, documentation, and correction in a flash memory device
US6873543B2 (en) 2003-05-30 2005-03-29 Hewlett-Packard Development Company, L.P. Memory device
US7372731B2 (en) 2003-06-17 2008-05-13 Sandisk Il Ltd. Flash memories with adaptive reference voltages
US6914809B2 (en) 2003-07-07 2005-07-05 Hewlett-Packard Development Company, L.P. Memory cell strings
US7191379B2 (en) 2003-09-10 2007-03-13 Hewlett-Packard Development Company, L.P. Magnetic memory with error correction coding
US7149950B2 (en) 2003-09-12 2006-12-12 Hewlett-Packard Development Company, L.P. Assisted memory device for reading and writing single and multiple units of data
FR2860360B1 (en) 2003-09-29 2005-12-09 Canon Kk ENCODING / DECODING DEVICE USING REED-SOLOMON ENCODER / DECODER
US7079436B2 (en) 2003-09-30 2006-07-18 Hewlett-Packard Development Company, L.P. Resistive cross point memory
US7188228B1 (en) 2003-10-01 2007-03-06 Sandisk Corporation Hybrid mapping implementation within a non-volatile memory system
US7012835B2 (en) 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US6990012B2 (en) 2003-10-07 2006-01-24 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7177199B2 (en) 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
US6996004B1 (en) 2003-11-04 2006-02-07 Advanced Micro Devices, Inc. Minimization of FG-FG coupling in flash memory
US20050120265A1 (en) 2003-12-02 2005-06-02 Pline Steven L. Data storage system with error correction code and replaceable defective memory
US7467177B2 (en) 2003-12-29 2008-12-16 Xilinx, Inc. Mathematical circuit with dynamic rounding
KR100526188B1 (en) 2003-12-30 2005-11-04 삼성전자주식회사 Method for address mapping and managing mapping information, and flash memory thereof
KR100528482B1 (en) 2003-12-31 2005-11-15 삼성전자주식회사 Flash memory system capable of inputting/outputting sector dara at random
US7068539B2 (en) 2004-01-27 2006-06-27 Sandisk Corporation Charge packet metering for coarse/fine programming of non-volatile memory
KR100608592B1 (en) 2004-01-27 2006-08-03 삼성전자주식회사 Data managing device and method thereof
US7210077B2 (en) 2004-01-29 2007-04-24 Hewlett-Packard Development Company, L.P. System and method for configuring a solid-state storage device with error correction coding
JP4170952B2 (en) * 2004-01-30 2008-10-22 株式会社東芝 Semiconductor memory device
US7610433B2 (en) 2004-02-05 2009-10-27 Research In Motion Limited Memory controller interface
US20050213393A1 (en) 2004-03-14 2005-09-29 M-Systems Flash Disk Pioneers, Ltd. States encoding in multi-bit flash cells for optimizing error rate
US7177977B2 (en) 2004-03-19 2007-02-13 Sandisk Corporation Operating non-volatile memory without read disturb limitations
US7325090B2 (en) 2004-04-29 2008-01-29 Sandisk Il Ltd. Refreshing data stored in a flash memory
US20060294312A1 (en) 2004-05-27 2006-12-28 Silverbrook Research Pty Ltd Generation sequences
US6999854B2 (en) 2004-05-28 2006-02-14 International Business Machines Corporation Medical infusion pump capable of learning bolus time patterns and providing bolus alerts
JP3967338B2 (en) 2004-06-09 2007-08-29 株式会社日立国際電気 Wireless packet transfer device
JP2008508632A (en) 2004-08-02 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Data storage and playback device
US20060059409A1 (en) 2004-09-10 2006-03-16 Hanho Lee Reed-solomon decoder systems for high speed communication and data storage applications
EP1635261B1 (en) 2004-09-10 2008-06-11 STMicroelectronics S.r.l. Memory with embedded error correction code circuit
JP4406339B2 (en) * 2004-09-21 2010-01-27 株式会社東芝 Controller, memory card and control method thereof
US7290203B2 (en) 2004-10-29 2007-10-30 International Business Machines Corporation Dynamic memory architecture employing passive expiration of data
US7038950B1 (en) 2004-11-05 2006-05-02 Spansion Llc Multi bit program algorithm
US7493457B2 (en) 2004-11-08 2009-02-17 Sandisk Il. Ltd States encoding in multi-bit flash cells for optimizing error rate
US7441067B2 (en) 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7395404B2 (en) 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7315916B2 (en) 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7313023B2 (en) 2005-03-11 2007-12-25 Sandisk Corporation Partition of non-volatile memory array to reduce bit line capacitance
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7196946B2 (en) 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7196928B2 (en) 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US8452929B2 (en) 2005-04-21 2013-05-28 Violin Memory Inc. Method and system for storage of data in non-volatile media
US20070098069A1 (en) 2005-04-27 2007-05-03 Stephen Gordon Inverse scan, coefficient, inverse quantization and inverse transform system and method
US7444579B2 (en) 2005-04-28 2008-10-28 Micron Technology, Inc. Non-systematic coded error correction
US7519582B2 (en) 2005-06-13 2009-04-14 International Business Machines Corporation System and method for performing a high-level multi-dimensional query on a multi-structural database
US7602009B2 (en) 2005-06-16 2009-10-13 Micron Technology, Inc. Erasable non-volatile memory device using hole trapping in high-K dielectrics
US7230854B2 (en) 2005-08-01 2007-06-12 Sandisk Corporation Method for programming non-volatile memory with self-adjusting maximum program loop
JP2007073779A (en) 2005-09-07 2007-03-22 Elpida Memory Inc Nonvolatile memory element and its manufacturing method
KR100719697B1 (en) 2005-10-10 2007-05-17 주식회사 하이닉스반도체 Method for programming a flash memory device
JP2007133683A (en) 2005-11-10 2007-05-31 Sony Corp Memory system
US7844877B2 (en) 2005-11-15 2010-11-30 Ramot At Tel Aviv University Ltd. Method and device for multi phase error-correction
US20070143561A1 (en) 2005-12-21 2007-06-21 Gorobets Sergey A Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system
US7793059B2 (en) 2006-01-18 2010-09-07 Apple Inc. Interleaving policies for flash memory
US8020060B2 (en) 2006-01-18 2011-09-13 Sandisk Il Ltd Method of arranging data in a multi-level cell memory device
US7844879B2 (en) 2006-01-20 2010-11-30 Marvell World Trade Ltd. Method and system for error correction in flash memory
US8055979B2 (en) 2006-01-20 2011-11-08 Marvell World Trade Ltd. Flash memory with coding and signal processing
US7388781B2 (en) 2006-03-06 2008-06-17 Sandisk Il Ltd. Multi-bit-per-cell flash memory device with non-bijective mapping
US7962827B2 (en) 2006-03-08 2011-06-14 Marvell World Trade Ltd. Systems and methods for achieving higher coding rate using parity interleaving
US7810017B2 (en) 2006-03-20 2010-10-05 Micron Technology, Inc. Variable sector-count ECC
US7786526B2 (en) 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR100763353B1 (en) 2006-04-26 2007-10-04 삼성전자주식회사 Nonvolatile semiconductor memory device decreasing the coupling noise by adjacent memory cell
US7466575B2 (en) 2006-05-12 2008-12-16 Anobit Technologies Ltd. Memory device programming using combined shaping and linear spreading
WO2007132452A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
WO2007132453A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Distortion estimation and cancellation in memory devices
WO2007132457A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
JP2007305267A (en) 2006-05-15 2007-11-22 Toshiba Corp Semiconductor storage device
US7613043B2 (en) 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
US7639531B2 (en) 2006-05-15 2009-12-29 Apple Inc. Dynamic cell bit resolution
US7809994B2 (en) 2006-05-17 2010-10-05 Sandisk Corporation Error correction coding for multiple-sector pages in flash memory devices
US7486561B2 (en) 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US20090282185A1 (en) 2006-06-30 2009-11-12 Nxp B.V. Flash memory device and a method for using the same
US7533328B2 (en) 2006-07-04 2009-05-12 Sandisk Il, Ltd. Method of error correction in a multi-bit-per-cell flash memory
US7443729B2 (en) 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US20080028014A1 (en) 2006-07-26 2008-01-31 Hilt Jason W N-BIT 2's COMPLEMENT SYMMETRIC ROUNDING METHOD AND LOGIC FOR IMPLEMENTING THE SAME
US7471565B2 (en) 2006-08-22 2008-12-30 Micron Technology, Inc. Reducing effects of program disturb in a memory device
KR100919156B1 (en) 2006-08-24 2009-09-28 삼성전자주식회사 Multi-bit flash memory device and program method thereof
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
US7450425B2 (en) 2006-08-30 2008-11-11 Micron Technology, Inc. Non-volatile memory cell read failure reduction
US7739576B2 (en) 2006-08-31 2010-06-15 Micron Technology, Inc. Variable strength ECC
KR100802059B1 (en) * 2006-09-06 2008-02-12 삼성전자주식회사 Memory system capable of suppressing generation of bad blocks due to read disturbance and operating method thereof
JP2008077810A (en) 2006-09-25 2008-04-03 Toshiba Corp Nonvolatile semiconductor storage device
US7716538B2 (en) 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7904783B2 (en) 2006-09-28 2011-03-08 Sandisk Corporation Soft-input soft-output decoder for nonvolatile memory
US7818653B2 (en) 2006-09-28 2010-10-19 Sandisk Corporation Methods of soft-input soft-output decoding for nonvolatile memory
US7805663B2 (en) 2006-09-28 2010-09-28 Sandisk Corporation Methods of adapting operation of nonvolatile memory
US7356442B1 (en) 2006-10-05 2008-04-08 International Business Machines Corporation End of life prediction of flash memory
US7805664B1 (en) 2006-10-05 2010-09-28 Marvell International Ltd Likelihood metric generation for trellis-based detection and/or decoding
US7961797B1 (en) 2006-10-10 2011-06-14 Marvell International Ltd. Nonlinear viterbi complexity reduction
KR100858241B1 (en) 2006-10-25 2008-09-12 삼성전자주식회사 Hybrid-flash memory device and method for assigning reserved blocks therof
US7821826B2 (en) 2006-10-30 2010-10-26 Anobit Technologies, Ltd. Memory cell readout using successive approximation
KR100771521B1 (en) 2006-10-30 2007-10-30 삼성전자주식회사 Flash memory device having a multi-leveled cell and programming method thereof
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7558109B2 (en) 2006-11-03 2009-07-07 Sandisk Corporation Nonvolatile memory with variable read threshold
US7440319B2 (en) * 2006-11-27 2008-10-21 Sandisk Corporation Apparatus with segmented bitscan for verification of programming
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8190961B1 (en) 2006-11-28 2012-05-29 Marvell International Ltd. System and method for using pilot signals in non-volatile memory devices
JP2010511266A (en) 2006-11-29 2010-04-08 ラムバス・インコーポレーテッド Integrated circuit with built-in heating circuit to reverse operational degeneration
KR100776139B1 (en) 2006-11-30 2007-11-15 동부일렉트로닉스 주식회사 Flash memory device
WO2008068747A2 (en) 2006-12-03 2008-06-12 Anobit Technologies Ltd. Automatic defect management in memory devices
US7706182B2 (en) * 2006-12-03 2010-04-27 Anobit Technologies Ltd. Adaptive programming of analog memory cells using statistical characteristics
US8074011B2 (en) * 2006-12-06 2011-12-06 Fusion-Io, Inc. Apparatus, system, and method for storage space recovery after reaching a read count limit
KR100785925B1 (en) 2006-12-06 2007-12-17 삼성전자주식회사 Multi-level cell memory device using tcm
WO2008070814A2 (en) 2006-12-06 2008-06-12 Fusion Multisystems, Inc. (Dba Fusion-Io) Apparatus, system, and method for a scalable, composite, reconfigurable backplane
KR100766042B1 (en) 2006-12-06 2007-10-12 삼성전자주식회사 Multi-level cell memory device using concatenated coding
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US8725975B2 (en) 2007-01-03 2014-05-13 Freescale Semiconductor, Inc. Progressive memory initialization with waitpoints
WO2008086237A2 (en) 2007-01-05 2008-07-17 California Institute Of Technology Codes for limited magnitude asymmetric errors in flash memories
KR100874441B1 (en) 2007-01-09 2008-12-17 삼성전자주식회사 Flash memory device capable of storing multi-bit data, memory controller controlling it, and memory system including the same
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US7900100B2 (en) 2007-02-21 2011-03-01 International Business Machines Corporation Uncorrectable error detection utilizing complementary test patterns
US7804718B2 (en) 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
WO2008111058A2 (en) 2007-03-12 2008-09-18 Anobit Technologies Ltd. Adaptive estimation of memory cell read thresholds
KR100874920B1 (en) 2007-03-15 2008-12-19 삼성전자주식회사 Flash memory device with reduced coupling effect between cells and driving method thereof
KR100891332B1 (en) 2007-03-30 2009-03-31 삼성전자주식회사 Bose-Chaudhuri-Hocquenghem error correction method and circuit for checking error using error correction encoder
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US8073648B2 (en) 2007-05-14 2011-12-06 Sandisk Il Ltd. Measuring threshold voltage distribution in memory using an aggregate characteristic
KR20090011249A (en) 2007-07-25 2009-02-02 삼성전자주식회사 Non-volatile memory cell programming method
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
WO2009095902A2 (en) 2008-01-31 2009-08-06 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
US8650352B2 (en) 2007-09-20 2014-02-11 Densbits Technologies Ltd. Systems and methods for determining logical values of coupled flash memory cells
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
WO2009053962A2 (en) 2007-10-22 2009-04-30 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
WO2009053961A2 (en) 2007-10-25 2009-04-30 Densbits Technologies Ltd. Systems and methods for multiple coding rates in flash devices
US20090113275A1 (en) 2007-10-29 2009-04-30 Legend Silicon Corp. Bch code with 256 information bytes and up to 8 bytes of parity check elements
US8046542B2 (en) 2007-11-21 2011-10-25 Micron Technology, Inc. Fault-tolerant non-volatile integrated circuit memory
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8429492B2 (en) 2007-11-30 2013-04-23 Marvell World Trade Ltd. Error correcting code predication system and method
US8335977B2 (en) 2007-12-05 2012-12-18 Densbits Technologies Ltd. Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells
US8453022B2 (en) 2007-12-05 2013-05-28 Densbits Technologies Ltd. Apparatus and methods for generating row-specific reading thresholds in flash memory
WO2009072105A2 (en) 2007-12-05 2009-06-11 Densbits Technologies Ltd. A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications
WO2009074978A2 (en) 2007-12-12 2009-06-18 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
US8276051B2 (en) 2007-12-12 2012-09-25 Densbits Technologies Ltd. Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8327246B2 (en) 2007-12-18 2012-12-04 Densbits Technologies Ltd. Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8255758B2 (en) 2008-01-21 2012-08-28 Apple Inc. Decoding of error correction code using partial bit inversion
US8300823B2 (en) 2008-01-28 2012-10-30 Netapp, Inc. Encryption and compression of data for storage
US8417893B2 (en) 2008-02-04 2013-04-09 Apple Inc. Memory mapping techniques
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
CN101251788A (en) 2008-03-07 2008-08-27 威盛电子股份有限公司 Storage unit management method and system
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
WO2009118720A2 (en) 2008-03-25 2009-10-01 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
US20090271564A1 (en) 2008-04-25 2009-10-29 Hitachi, Ltd. Storage system
US7957187B2 (en) 2008-05-09 2011-06-07 Sandisk Corporation Dynamic and adaptive optimization of read compare levels based on memory cell threshold voltage distribution
US8625785B2 (en) 2008-05-15 2014-01-07 Qualcomm Incorporated Identity based symmetric cryptosystem using secure biometric model
US8060719B2 (en) 2008-05-28 2011-11-15 Micron Technology, Inc. Hybrid memory management
US8154918B2 (en) 2008-06-30 2012-04-10 Sandisk Il Ltd. Method for page- and block based scrambling in non-volatile memory
US8904083B2 (en) 2008-07-30 2014-12-02 Infineon Technologies Ag Method and apparatus for storing data in solid state memory
KR101528167B1 (en) 2008-08-01 2015-06-12 삼성전자주식회사 Memory device and method of data decision of memory device
US8332725B2 (en) 2008-08-20 2012-12-11 Densbits Technologies Ltd. Reprogramming non volatile memory portions
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US7839690B2 (en) 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
US8040744B2 (en) 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
KR20100082185A (en) 2009-01-08 2010-07-16 삼성전자주식회사 User device including flash memory, cache memory and controller
US8036035B2 (en) 2009-03-25 2011-10-11 Micron Technology, Inc. Erase cycle counter usage in a memory device
US8458574B2 (en) 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US10447474B2 (en) 2009-04-20 2019-10-15 Pure Storage, Inc. Dispersed data storage system data decoding and decryption
US8566510B2 (en) 2009-05-12 2013-10-22 Densbits Technologies Ltd. Systems and method for flash memory management
US8159881B2 (en) 2009-06-03 2012-04-17 Marvell World Trade Ltd. Reference voltage optimization for flash memory
TWI425512B (en) 2009-06-16 2014-02-01 Phison Electronics Corp Flash memory controller circuit and storage system and data transfer method thereof
US8305812B2 (en) 2009-08-26 2012-11-06 Densbits Technologies Ltd. Flash memory module and method for programming a page of flash memory cells
US8868821B2 (en) 2009-08-26 2014-10-21 Densbits Technologies Ltd. Systems and methods for pre-equalization and code design for a flash memory
US8730729B2 (en) 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
KR101602939B1 (en) 2009-10-16 2016-03-15 삼성전자주식회사 Nonvolatile memory system and method for managing data thereof
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US8423866B2 (en) 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8626988B2 (en) 2009-11-19 2014-01-07 Densbits Technologies Ltd. System and method for uncoded bit error rate equalization via interleaving
US8250324B2 (en) 2009-11-30 2012-08-21 International Business Machines Corporation Method to efficiently locate meta-data structures on a flash-based storage device
US9037777B2 (en) 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
US8607124B2 (en) 2009-12-24 2013-12-10 Densbits Technologies Ltd. System and method for setting a flash memory cell read threshold
KR101662309B1 (en) 2010-02-08 2016-10-04 삼성전자주식회사 Method of programming memory cells for a non-volatile memory device
US8589766B2 (en) 2010-02-24 2013-11-19 Apple Inc. Codeword remapping schemes for non-volatile memories
US8700970B2 (en) 2010-02-28 2014-04-15 Densbits Technologies Ltd. System and method for multi-dimensional decoding
US8527840B2 (en) 2010-04-06 2013-09-03 Densbits Technologies Ltd. System and method for restoring damaged data programmed on a flash device
US8516274B2 (en) 2010-04-06 2013-08-20 Densbits Technologies Ltd. Method, system and medium for analog encryption in a flash memory
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
US20110252187A1 (en) 2010-04-07 2011-10-13 Avigdor Segal System and method for operating a non-volatile memory including a portion operating as a single-level cell memory and a portion operating as a multi-level cell memory
US9021177B2 (en) 2010-04-29 2015-04-28 Densbits Technologies Ltd. System and method for allocating and using spare blocks in a flash memory
US8539311B2 (en) 2010-07-01 2013-09-17 Densbits Technologies Ltd. System and method for data recovery in multi-level cell memories
US8468431B2 (en) 2010-07-01 2013-06-18 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
US8467249B2 (en) 2010-07-06 2013-06-18 Densbits Technologies Ltd. Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
US8407560B2 (en) 2010-07-14 2013-03-26 Hewlett-Packard Development Company, L.P. Systems and methods for encoding information for storage in an electronic memory and for decoding encoded information retrieved from an electronic memory
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US8508995B2 (en) 2010-09-15 2013-08-13 Densbits Technologies Ltd. System and method for adjusting read voltage thresholds in memories
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
US8806106B2 (en) 2010-11-12 2014-08-12 Seagate Technology Llc Estimating wear of non-volatile, solid state memory
US8886990B2 (en) 2011-01-27 2014-11-11 Apple Inc. Block management schemes in hybrid SLC/MLC memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040153817A1 (en) * 1996-10-24 2004-08-05 Micron Technologies, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US20070223277A1 (en) * 1999-06-28 2007-09-27 Kabushiki Kaisha Toshiba Flash memory
US20070109858A1 (en) * 2000-12-28 2007-05-17 Conley Kevin M Novel Method and Structure for Efficient Data Verification Operation for Non-Volatile Memories

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