WO2009114392A3 - Semiconductor die package including embedded flip chip - Google Patents

Semiconductor die package including embedded flip chip Download PDF

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Publication number
WO2009114392A3
WO2009114392A3 PCT/US2009/036226 US2009036226W WO2009114392A3 WO 2009114392 A3 WO2009114392 A3 WO 2009114392A3 US 2009036226 W US2009036226 W US 2009036226W WO 2009114392 A3 WO2009114392 A3 WO 2009114392A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor die
die package
flip chip
package including
including embedded
Prior art date
Application number
PCT/US2009/036226
Other languages
French (fr)
Other versions
WO2009114392A2 (en
Inventor
Yong Liu
Jeff Ju
Zhongfa Yuan
Roger Luo
Original Assignee
Fairchild Semiconductor Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corporation filed Critical Fairchild Semiconductor Corporation
Priority to KR1020107021836A priority Critical patent/KR101483204B1/en
Priority to CN200980108883.5A priority patent/CN101971332B/en
Publication of WO2009114392A2 publication Critical patent/WO2009114392A2/en
Publication of WO2009114392A3 publication Critical patent/WO2009114392A3/en

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Abstract

A semiconductor die package. The semiconductor die package includes a leadframe structure, a first semiconductor die comprising a first surface attached to a first side of the leadframe structure, and a second semiconductor die attached to a second side of the leadframe structure. The second semiconductor die comprises an integrated circuit die. A housing material is formed over at least a portion of the leadframe structure, the first semiconductor die, and the second semiconductor die. An exterior surface of the molding material is substantially coplanar with the first surface of the semiconductor die.
PCT/US2009/036226 2008-03-12 2009-03-05 Semiconductor die package including embedded flip chip WO2009114392A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020107021836A KR101483204B1 (en) 2008-03-12 2009-03-05 Semiconductor die package including embedded flip chip
CN200980108883.5A CN101971332B (en) 2008-03-12 2009-03-05 Semiconductor die package including embedded flip chip

Applications Claiming Priority (2)

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US12/047,028 US7768108B2 (en) 2008-03-12 2008-03-12 Semiconductor die package including embedded flip chip
US12/047,028 2008-03-12

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WO2009114392A2 WO2009114392A2 (en) 2009-09-17
WO2009114392A3 true WO2009114392A3 (en) 2009-11-26

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US (1) US7768108B2 (en)
KR (1) KR101483204B1 (en)
CN (1) CN101971332B (en)
MY (1) MY149770A (en)
TW (1) TWI464851B (en)
WO (1) WO2009114392A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8106406B2 (en) 2008-01-09 2012-01-31 Fairchild Semiconductor Corporation Die package including substrate with molded device
US8138585B2 (en) * 2008-05-28 2012-03-20 Fairchild Semiconductor Corporation Four mosfet full bridge module
US8304888B2 (en) * 2009-12-22 2012-11-06 Fairchild Semiconductor Corporation Integrated circuit package with embedded components
US8115260B2 (en) * 2010-01-06 2012-02-14 Fairchild Semiconductor Corporation Wafer level stack die package
TWI453831B (en) 2010-09-09 2014-09-21 台灣捷康綜合有限公司 Semiconductor package and method for making the same
CN102184917B (en) * 2011-03-25 2013-04-03 锐迪科创微电子（北京）有限公司 Global system for mobile communications (GSM) radio-frequency emission front-end module adopting Quad Flat No-lead package
CN103035631B (en) * 2011-09-28 2015-07-29 万国半导体(开曼)股份有限公司 Combine the semiconductor device and manufacture method thereof that encapsulate high-end and low side chip
US9277652B2 (en) * 2013-03-13 2016-03-01 Blackberry Limited Method and apparatus pertaining to a cavity-bearing printed circuit board
US9589929B2 (en) 2013-03-14 2017-03-07 Vishay-Siliconix Method for fabricating stack die package
US9966330B2 (en) 2013-03-14 2018-05-08 Vishay-Siliconix Stack die package
US9324640B1 (en) * 2014-11-04 2016-04-26 Texas Instruments Incorporated Triple stack semiconductor package
US10685904B2 (en) 2014-11-21 2020-06-16 Delta Electronics, Inc. Packaging device and manufacturing method thereof
US9509251B2 (en) 2015-03-24 2016-11-29 Freescale Semiconductor, Inc. RF amplifier module and methods of manufacture thereof
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9871107B2 (en) 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US10050025B2 (en) * 2016-02-09 2018-08-14 Texas Instruments Incorporated Power converter monolithically integrating transistors, carrier, and components
USD887998S1 (en) 2017-02-17 2020-06-23 Stat Peel Ag Chip
CN114093932B (en) * 2022-01-21 2022-04-22 威海艾迪科电子科技股份有限公司 Integrated circuit packaging structure and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235260A (en) * 1991-12-27 1993-09-10 Fujitsu Ltd Semiconductor device
JPH0730051A (en) * 1993-07-09 1995-01-31 Fujitsu Ltd Semiconductor device
US20030102489A1 (en) * 1999-09-13 2003-06-05 Nam Shi-Baek Power device having multi-chip package structure

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751199A (en) 1983-12-06 1988-06-14 Fairchild Semiconductor Corporation Process of forming a compliant lead frame for array-type semiconductor packages
US4772935A (en) 1984-12-19 1988-09-20 Fairchild Semiconductor Corporation Die bonding process
US4890153A (en) 1986-04-04 1989-12-26 Fairchild Semiconductor Corporation Single bonding shelf, multi-row wire-bond finger layout for integrated circuit package
US4791473A (en) 1986-12-17 1988-12-13 Fairchild Semiconductor Corporation Plastic package for high frequency semiconductor devices
US4839717A (en) 1986-12-19 1989-06-13 Fairchild Semiconductor Corporation Ceramic package for high frequency semiconductor devices
US4731701A (en) 1987-05-12 1988-03-15 Fairchild Semiconductor Corporation Integrated circuit package with thermal path layers incorporating staggered thermal vias
US4796080A (en) 1987-07-23 1989-01-03 Fairchild Camera And Instrument Corporation Semiconductor chip package configuration and method for facilitating its testing and mounting on a substrate
US5479051A (en) * 1992-10-09 1995-12-26 Fujitsu Limited Semiconductor device having a plurality of semiconductor chips
US5327325A (en) 1993-02-08 1994-07-05 Fairchild Space And Defense Corporation Three-dimensional integrated circuit package
US5646446A (en) 1995-12-22 1997-07-08 Fairchild Space And Defense Corporation Three-dimensional flexible assembly of integrated circuits
US6133067A (en) * 1997-12-06 2000-10-17 Amic Technology Inc. Architecture for dual-chip integrated circuit package and method of manufacturing the same
US6624505B2 (en) * 1998-02-06 2003-09-23 Shellcase, Ltd. Packaged integrated circuits and methods of producing thereof
US6133634A (en) 1998-08-05 2000-10-17 Fairchild Semiconductor Corporation High performance flip chip package
KR100335480B1 (en) 1999-08-24 2002-05-04 김덕중 Leadframe using chip pad as heat spreading path and semiconductor package thereof
IL133453A0 (en) * 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US6720642B1 (en) 1999-12-16 2004-04-13 Fairchild Semiconductor Corporation Flip chip in leaded molded package and method of manufacture thereof
US6989588B2 (en) 2000-04-13 2006-01-24 Fairchild Semiconductor Corporation Semiconductor device including molded wireless exposed drain packaging
US6556750B2 (en) 2000-05-26 2003-04-29 Fairchild Semiconductor Corporation Bi-directional optical coupler
KR100370231B1 (en) 2000-06-13 2003-01-29 페어차일드코리아반도체 주식회사 Power module package having a insulator type heat sink attached a backside of leadframe & manufacturing method thereof
KR100403608B1 (en) 2000-11-10 2003-11-01 페어차일드코리아반도체 주식회사 Stacked intelligent power module package and manufacturing method thereof
KR100374629B1 (en) 2000-12-19 2003-03-04 페어차일드코리아반도체 주식회사 A power semiconductor package for thin and small size
US6469384B2 (en) 2001-02-01 2002-10-22 Fairchild Semiconductor Corporation Unmolded package for a semiconductor device
US6891257B2 (en) 2001-03-30 2005-05-10 Fairchild Semiconductor Corporation Packaging system for die-up connection of a die-down oriented integrated circuit
TW505847B (en) * 2001-04-06 2002-10-11 Veutron Corportion Power saving method and device of peripheral product having multiple interfaces
US6645791B2 (en) 2001-04-23 2003-11-11 Fairchild Semiconductor Semiconductor die package including carrier with mask
US6893901B2 (en) 2001-05-14 2005-05-17 Fairchild Semiconductor Corporation Carrier with metal bumps for semiconductor die packages
US7061080B2 (en) 2001-06-11 2006-06-13 Fairchild Korea Semiconductor Ltd. Power module package having improved heat dissipating capability
US6683375B2 (en) 2001-06-15 2004-01-27 Fairchild Semiconductor Corporation Semiconductor die including conductive columns
US20030042587A1 (en) * 2001-08-31 2003-03-06 Tsung-Jen Lee IC packaging and manufacturing methods
US6774465B2 (en) 2001-10-05 2004-08-10 Fairchild Korea Semiconductor, Ltd. Semiconductor power package module
US6891256B2 (en) 2001-10-22 2005-05-10 Fairchild Semiconductor Corporation Thin, thermally enhanced flip chip in a leaded molded package
US6674157B2 (en) 2001-11-02 2004-01-06 Fairchild Semiconductor Corporation Semiconductor package comprising vertical power transistor
US6566749B1 (en) 2002-01-15 2003-05-20 Fairchild Semiconductor Corporation Semiconductor die package with improved thermal and electrical performance
US6830959B2 (en) 2002-01-22 2004-12-14 Fairchild Semiconductor Corporation Semiconductor die package with semiconductor die having side electrical connection
US6867489B1 (en) 2002-01-22 2005-03-15 Fairchild Semiconductor Corporation Semiconductor die package processable at the wafer level
AU2003218085A1 (en) 2002-03-12 2003-09-29 Fairchild Semiconductor Corporation Wafer-level coated copper stud bumps
US7122884B2 (en) 2002-04-16 2006-10-17 Fairchild Semiconductor Corporation Robust leaded molded packages and methods for forming the same
US6836023B2 (en) 2002-04-17 2004-12-28 Fairchild Semiconductor Corporation Structure of integrated trace of chip package
KR100843737B1 (en) 2002-05-10 2008-07-04 페어차일드코리아반도체 주식회사 Semiconductor package having improved reliability of solder joint
US7061077B2 (en) 2002-08-30 2006-06-13 Fairchild Semiconductor Corporation Substrate based unmolded package including lead frame structure and semiconductor die
US6777800B2 (en) 2002-09-30 2004-08-17 Fairchild Semiconductor Corporation Semiconductor die package including drain clip
US6943434B2 (en) 2002-10-03 2005-09-13 Fairchild Semiconductor Corporation Method for maintaining solder thickness in flipchip attach packaging processes
US6806580B2 (en) 2002-12-26 2004-10-19 Fairchild Semiconductor Corporation Multichip module including substrate with an array of interconnect structures
KR100958422B1 (en) 2003-01-21 2010-05-18 페어차일드코리아반도체 주식회사 Semiconductor package having the structure for high voltage application
US7217594B2 (en) 2003-02-11 2007-05-15 Fairchild Semiconductor Corporation Alternative flip chip in leaded molded package design and method for manufacture
US7271497B2 (en) 2003-03-10 2007-09-18 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
US6867481B2 (en) 2003-04-11 2005-03-15 Fairchild Semiconductor Corporation Lead frame structure with aperture or groove for flip chip in a leaded molded package
JP4141340B2 (en) * 2003-07-16 2008-08-27 三洋電機株式会社 Manufacturing method of semiconductor device
US7315077B2 (en) 2003-11-13 2008-01-01 Fairchild Korea Semiconductor, Ltd. Molded leadless package having a partially exposed lead frame pad
US7196313B2 (en) 2004-04-02 2007-03-27 Fairchild Semiconductor Corporation Surface mount multi-channel optocoupler
US7242076B2 (en) 2004-05-18 2007-07-10 Fairchild Semiconductor Corporation Packaged integrated circuit with MLP leadframe and method of making same
US7256479B2 (en) 2005-01-13 2007-08-14 Fairchild Semiconductor Corporation Method to manufacture a universal footprint for a package with exposed chip
US20070045785A1 (en) 2005-08-30 2007-03-01 Noquil Jonathan A Reversible-multiple footprint package and method of manufacturing
US7285849B2 (en) 2005-11-18 2007-10-23 Fairchild Semiconductor Corporation Semiconductor die package using leadframe and clip and method of manufacturing
US7705436B2 (en) * 2007-08-06 2010-04-27 Infineon Technologies Ag Semiconductor device with semiconductor chip and method for producing it

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235260A (en) * 1991-12-27 1993-09-10 Fujitsu Ltd Semiconductor device
JPH0730051A (en) * 1993-07-09 1995-01-31 Fujitsu Ltd Semiconductor device
US20030102489A1 (en) * 1999-09-13 2003-06-05 Nam Shi-Baek Power device having multi-chip package structure

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WO2009114392A2 (en) 2009-09-17
US20090230537A1 (en) 2009-09-17
KR20100130611A (en) 2010-12-13
TW200943517A (en) 2009-10-16
US7768108B2 (en) 2010-08-03
TWI464851B (en) 2014-12-11
MY149770A (en) 2013-10-14
CN101971332B (en) 2015-04-29
KR101483204B1 (en) 2015-01-15
CN101971332A (en) 2011-02-09

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