WO2009117438A3 - Process to make metal oxide thin film transistor array with etch stopping layer - Google Patents

Process to make metal oxide thin film transistor array with etch stopping layer Download PDF

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Publication number
WO2009117438A3
WO2009117438A3 PCT/US2009/037428 US2009037428W WO2009117438A3 WO 2009117438 A3 WO2009117438 A3 WO 2009117438A3 US 2009037428 W US2009037428 W US 2009037428W WO 2009117438 A3 WO2009117438 A3 WO 2009117438A3
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WO
WIPO (PCT)
Prior art keywords
active channel
thin film
metal oxide
film transistor
active
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PCT/US2009/037428
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French (fr)
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WO2009117438A2 (en
Inventor
Yan Ye
Original Assignee
Applied Materials, Inc.
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2009117438A2 publication Critical patent/WO2009117438A2/en
Publication of WO2009117438A3 publication Critical patent/WO2009117438A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.
PCT/US2009/037428 2008-03-20 2009-03-17 Process to make metal oxide thin film transistor array with etch stopping layer WO2009117438A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3828908P 2008-03-20 2008-03-20
US61/038,289 2008-03-20

Publications (2)

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WO2009117438A2 WO2009117438A2 (en) 2009-09-24
WO2009117438A3 true WO2009117438A3 (en) 2009-11-19

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PCT/US2009/037428 WO2009117438A2 (en) 2008-03-20 2009-03-17 Process to make metal oxide thin film transistor array with etch stopping layer

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US (2) US8143093B2 (en)
TW (1) TWI415267B (en)
WO (1) WO2009117438A2 (en)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007118204A2 (en) * 2006-04-06 2007-10-18 Applied Materials, Inc. Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
JP5718052B2 (en) 2007-08-02 2015-05-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Thin film transistor using thin film semiconductor material
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
US8143093B2 (en) * 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US8273600B2 (en) * 2009-04-21 2012-09-25 Chan-Long Shieh Self-aligned metal oxide TFT with reduced number of masks
TWI396314B (en) * 2009-07-27 2013-05-11 Au Optronics Corp Pixel structure, organic electro-luminescence display unit, and faricating method thereof
WO2011037829A2 (en) 2009-09-24 2011-03-31 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
WO2011087514A1 (en) * 2010-01-18 2011-07-21 Applied Materials, Inc. Etch stop microcrystalline thin film transistor
KR101293130B1 (en) * 2010-05-28 2013-08-12 엘지디스플레이 주식회사 Array substrate and method of fabricating the same
TWI602249B (en) 2011-03-11 2017-10-11 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
US9093539B2 (en) * 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102214700A (en) * 2011-06-02 2011-10-12 上海大学 Barrier layer applied to wet etching of oxide thin film transistor array
DE102011077525A1 (en) 2011-06-15 2012-12-20 Bayerische Motoren Werke Aktiengesellschaft Method for damping mechanical vibrations in a vehicle
KR101506303B1 (en) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130043063A (en) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR102067051B1 (en) * 2011-10-24 2020-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI621183B (en) * 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
CN102651340B (en) * 2011-12-31 2014-11-19 京东方科技集团股份有限公司 Manufacturing method of TFT (Thin Film Transistor) array substrate
US8841665B2 (en) * 2012-04-06 2014-09-23 Electronics And Telecommunications Research Institute Method for manufacturing oxide thin film transistor
US9651835B2 (en) * 2013-01-11 2017-05-16 Sharp Kabushiki Kaisha Display panel
US9012261B2 (en) 2013-03-13 2015-04-21 Intermolecular, Inc. High productivity combinatorial screening for stable metal oxide TFTs
WO2014159033A1 (en) * 2013-03-13 2014-10-02 Applied Materials, Inc. Vth control method of multiple active layer metal oxide semiconductor tft
CN105051907A (en) * 2013-03-19 2015-11-11 应用材料公司 Multilayer passivation or etch stop TFT
CN103337522B (en) * 2013-06-17 2016-06-15 南京中电熊猫液晶显示科技有限公司 A kind of metal oxide thin-film transistor array substrate and manufacture method thereof
CN103354218B (en) * 2013-06-28 2016-12-28 京东方科技集团股份有限公司 Array base palte and preparation method thereof and display device
US9190493B2 (en) 2013-07-15 2015-11-17 Polyera Corporation Photopatternable materials and related electronic devices and methods
KR102147849B1 (en) * 2013-08-05 2020-08-25 삼성전자주식회사 Thin film transistor and method for fabricating the same
CN103500710B (en) * 2013-10-11 2015-11-25 京东方科技集团股份有限公司 A kind of thin-film transistor manufacture method, thin-film transistor and display device
US9704888B2 (en) 2014-01-08 2017-07-11 Apple Inc. Display circuitry with reduced metal routing resistance
US9530801B2 (en) 2014-01-13 2016-12-27 Apple Inc. Display circuitry with improved transmittance and reduced coupling capacitance
TW201547029A (en) 2014-06-13 2015-12-16 Chunghwa Picture Tubes Ltd Thin film transistor
CN104201188B (en) * 2014-08-22 2017-07-25 京东方科技集团股份有限公司 OLED pixel unit and preparation method thereof, display panel and display device
CN104992947B (en) * 2015-06-03 2018-01-12 合肥鑫晟光电科技有限公司 A kind of oxide semiconductor tft array substrate and preparation method thereof
US10134878B2 (en) * 2016-01-14 2018-11-20 Applied Materials, Inc. Oxygen vacancy of IGZO passivation by fluorine treatment
CN105514127A (en) * 2016-02-25 2016-04-20 昆山龙腾光电有限公司 Oxide thin-film transistor array substrate, production method thereof and liquid crystal display panel
CN105702586B (en) 2016-04-28 2019-06-07 京东方科技集团股份有限公司 A kind of thin film transistor (TFT), array substrate, its production method and display device
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US20030047785A1 (en) * 2001-09-10 2003-03-13 Masahi Kawasaki Thin film transistor and matrix display device
US6746959B2 (en) * 1996-07-26 2004-06-08 Lg Philips Lcd Co., Ltd. Liquid crystal display and method

Family Cites Families (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331737A (en) * 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
FR2579754B1 (en) * 1985-04-02 1987-07-31 Centre Nat Rech Scient NITRIDES AND OXYNITRIDES USEFUL AS SELECTIVE DETECTORS OF REDUCING GASES IN THE ATMOSPHERE, AND DETECTION DEVICE CONTAINING THEM
US4769291A (en) * 1987-02-02 1988-09-06 The Boc Group, Inc. Transparent coatings by reactive sputtering
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
FR2638527B1 (en) * 1988-11-02 1991-02-01 Centre Nat Rech Scient GALLIUM NITRIDE AND OXYNITRIDES USEFUL AS SELECTIVE DETECTORS OF REDUCING GASES IN THE ATMOSPHERE, PROCESS FOR THEIR PREPARATION, AND DETECTION DEVICE CONTAINING THEM
AU627948B2 (en) * 1989-11-01 1992-09-03 Aquazon Pty Limited Corrosion inhibition process
CA2034118A1 (en) * 1990-02-09 1991-08-10 Nang Tri Tran Solid state radiation detector
JP2999280B2 (en) * 1991-02-22 2000-01-17 キヤノン株式会社 Photovoltaic element
JP2994812B2 (en) 1991-09-26 1999-12-27 キヤノン株式会社 Solar cell
US5346601A (en) * 1993-05-11 1994-09-13 Andrew Barada Sputter coating collimator with integral reactive gas distribution
TW273067B (en) 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
JPH07131030A (en) 1993-11-05 1995-05-19 Sony Corp Thin film semiconductor device for display and fabrication thereof
JP3571785B2 (en) * 1993-12-28 2004-09-29 キヤノン株式会社 Method and apparatus for forming deposited film
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5668663A (en) * 1994-05-05 1997-09-16 Donnelly Corporation Electrochromic mirrors and devices
US5700699A (en) 1995-03-16 1997-12-23 Lg Electronics Inc. Method for fabricating a polycrystal silicon thin film transistor
JP3306258B2 (en) 1995-03-27 2002-07-24 三洋電機株式会社 Method for manufacturing semiconductor device
JP3169337B2 (en) * 1995-05-30 2001-05-21 キヤノン株式会社 Photovoltaic element and method for manufacturing the same
US6969635B2 (en) * 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US5716480A (en) * 1995-07-13 1998-02-10 Canon Kabushiki Kaisha Photovoltaic device and method of manufacturing the same
JP3625598B2 (en) * 1995-12-30 2005-03-02 三星電子株式会社 Manufacturing method of liquid crystal display device
US6153013A (en) 1996-02-16 2000-11-28 Canon Kabushiki Kaisha Deposited-film-forming apparatus
KR100251070B1 (en) * 1996-08-28 2000-04-15 미다라이 후지오 Photovoltaic device
US6159763A (en) 1996-09-12 2000-12-12 Canon Kabushiki Kaisha Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
US5993594A (en) 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
US6238527B1 (en) * 1997-10-08 2001-05-29 Canon Kabushiki Kaisha Thin film forming apparatus and method of forming thin film of compound by using the same
JP4208281B2 (en) * 1998-02-26 2009-01-14 キヤノン株式会社 Multilayer photovoltaic device
TW410478B (en) 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US6388301B1 (en) * 1998-06-01 2002-05-14 Kaneka Corporation Silicon-based thin-film photoelectric device
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
EP1006589B1 (en) * 1998-12-03 2012-04-11 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
US20020084455A1 (en) * 1999-03-30 2002-07-04 Jeffery T. Cheung Transparent and conductive zinc oxide film with low growth temperature
TW428328B (en) * 1999-07-30 2001-04-01 Hannstar Display Corp Fabricating method of thin film transistor
KR100590925B1 (en) 1999-07-30 2006-06-19 비오이 하이디스 테크놀로지 주식회사 method for manufacturing the TFT- LCD
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6953947B2 (en) * 1999-12-31 2005-10-11 Lg Chem, Ltd. Organic thin film transistor
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
KR100679917B1 (en) * 2000-09-09 2007-02-07 엘지.필립스 엘시디 주식회사 Thin film transistor and the method of fabricating the same
AU2002235146A1 (en) * 2000-11-30 2002-06-11 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
JP2002252353A (en) * 2001-02-26 2002-09-06 Hitachi Ltd Thin-film transistor and active matrix type liquid crystal display device
KR100491141B1 (en) 2001-03-02 2005-05-24 삼성에스디아이 주식회사 TFT and Method for Fabricating the Same and Active Matrix display device and Method for fabricating the Same using the TFT
WO2002073313A1 (en) * 2001-03-13 2002-09-19 University Of Utah Structured organic materials and devices using low-energy particle beams
US6740938B2 (en) * 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween
JP2002373867A (en) * 2001-06-14 2002-12-26 Idemitsu Kosan Co Ltd Semiconductor device, electrically conductive thin film therefor, and method of manufacturing the same
JP4560245B2 (en) * 2001-06-29 2010-10-13 キヤノン株式会社 Photovoltaic element
US20030049464A1 (en) * 2001-09-04 2003-03-13 Afg Industries, Inc. Double silver low-emissivity and solar control coatings
US20030207093A1 (en) 2001-12-03 2003-11-06 Toshio Tsuji Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
US6825134B2 (en) 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
KR100847487B1 (en) * 2002-04-09 2008-07-22 가부시키가이샤 가네카 Method for fabricating tandem thin film photoelectric converter
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
EP1579025B1 (en) * 2002-12-31 2010-09-29 Cardinal CG Company Coater having substrate cleaning device and coating deposition method employing such coater
JP2004363560A (en) * 2003-05-09 2004-12-24 Seiko Epson Corp Substrate, device, process for fabricating device, process for producing active matrix substrate,electrooptic device and electronic apparatus
JP5068946B2 (en) * 2003-05-13 2012-11-07 旭硝子株式会社 Transparent conductive substrate for solar cell and method for producing the same
TWI222753B (en) * 2003-05-20 2004-10-21 Au Optronics Corp Method for forming a thin film transistor of an organic light emitting display
JP4344270B2 (en) 2003-05-30 2009-10-14 セイコーエプソン株式会社 Manufacturing method of liquid crystal display device
US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
TWI230461B (en) * 2003-08-20 2005-04-01 Chi Mei Optoelectronics Corp Method for manufacturing thin film transistor panel
US7816863B2 (en) * 2003-09-12 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP4823478B2 (en) * 2003-09-19 2011-11-24 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
TWI224868B (en) 2003-10-07 2004-12-01 Ind Tech Res Inst Method of forming poly-silicon thin film transistor
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
EP2413366B1 (en) * 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7122398B1 (en) * 2004-03-25 2006-10-17 Nanosolar, Inc. Manufacturing of optoelectronic devices
US20050233092A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Method of controlling the uniformity of PECVD-deposited thin films
US7125758B2 (en) * 2004-04-20 2006-10-24 Applied Materials, Inc. Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
EP2650906A3 (en) * 2004-06-04 2015-02-18 The Board of Trustees of the University of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7158208B2 (en) * 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060011139A1 (en) * 2004-07-16 2006-01-19 Applied Materials, Inc. Heated substrate support for chemical vapor deposition
KR100721555B1 (en) * 2004-08-13 2007-05-23 삼성에스디아이 주식회사 Bottom gate thin film transistor and method fabricating thereof
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
US7622338B2 (en) * 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
CN1293606C (en) 2004-09-30 2007-01-03 浙江大学 Method or growing N-Al co-blended p type ZnO transistor film by two step method
US7382421B2 (en) * 2004-10-12 2008-06-03 Hewlett-Packard Development Company, L.P. Thin film transistor with a passivation layer
CN101057339B (en) * 2004-11-10 2012-12-26 佳能株式会社 Amorphous oxide and field effect transistor
US7309895B2 (en) 2005-01-25 2007-12-18 Hewlett-Packard Development Company, L.P. Semiconductor device
US7381586B2 (en) 2005-06-16 2008-06-03 Industrial Technology Research Institute Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7628896B2 (en) * 2005-07-05 2009-12-08 Guardian Industries Corp. Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same
US7829471B2 (en) * 2005-07-29 2010-11-09 Applied Materials, Inc. Cluster tool and method for process integration in manufacturing of a photomask
US20070030569A1 (en) * 2005-08-04 2007-02-08 Guardian Industries Corp. Broad band antireflection coating and method of making same
JP4968660B2 (en) * 2005-08-24 2012-07-04 スタンレー電気株式会社 Manufacturing method of ZnO-based compound semiconductor crystal and ZnO-based compound semiconductor substrate
KR100729043B1 (en) * 2005-09-14 2007-06-14 삼성에스디아이 주식회사 Transparent Thin Film Transistor and Fabrication Method for the same
US20070068571A1 (en) * 2005-09-29 2007-03-29 Terra Solar Global Shunt Passivation Method for Amorphous Silicon Thin Film Photovoltaic Modules
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
KR100785038B1 (en) 2006-04-17 2007-12-12 삼성전자주식회사 Amorphous ZnO based Thin Film Transistor
JP2007294709A (en) 2006-04-26 2007-11-08 Epson Imaging Devices Corp Electro-optical device, electronic equipment, and method for manufacturing electro-optical device
JP4946156B2 (en) * 2006-05-01 2012-06-06 富士ゼロックス株式会社 SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, LIGHT RECEIVING DEVICE USING THE SEMICONDUCTOR FILM, ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY, PROCESS CARTRIDGE
US20090023959A1 (en) * 2006-06-16 2009-01-22 D Amore Michael B Process for making dibutyl ethers from dry 1-butanol
KR101340514B1 (en) * 2007-01-24 2013-12-12 삼성디스플레이 주식회사 Thin film transistor substrate and method of fabricating the same
KR100851215B1 (en) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light-emitting dislplay device having the thin film transistor
CN101663762B (en) * 2007-04-25 2011-09-21 佳能株式会社 Oxynitride semiconductor
KR100982395B1 (en) * 2007-04-25 2010-09-14 주식회사 엘지화학 Thin film transistor and method for preparing the same
US7927713B2 (en) * 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
JP5215589B2 (en) * 2007-05-11 2013-06-19 キヤノン株式会社 Insulated gate transistor and display device
US20080308411A1 (en) 2007-05-25 2008-12-18 Energy Photovoltaics, Inc. Method and process for deposition of textured zinc oxide thin films
JP5241143B2 (en) * 2007-05-30 2013-07-17 キヤノン株式会社 Field effect transistor
US8372250B2 (en) * 2007-07-23 2013-02-12 National Science And Technology Development Agency Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering
JP5718052B2 (en) * 2007-08-02 2015-05-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Thin film transistor using thin film semiconductor material
US20090212287A1 (en) * 2007-10-30 2009-08-27 Ignis Innovation Inc. Thin film transistor and method for forming the same
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
US8143093B2 (en) * 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
JP5430113B2 (en) * 2008-10-08 2014-02-26 キヤノン株式会社 Field effect transistor and manufacturing method thereof
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
TWI489628B (en) * 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US8314421B2 (en) * 2009-06-01 2012-11-20 Qiu Cindy X Thin film transistors and circuits with metal oxynitride active channel layers
WO2011037829A2 (en) * 2009-09-24 2011-03-31 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US6746959B2 (en) * 1996-07-26 2004-06-08 Lg Philips Lcd Co., Ltd. Liquid crystal display and method
US20030047785A1 (en) * 2001-09-10 2003-03-13 Masahi Kawasaki Thin film transistor and matrix display device

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