WO2010048537A3 - Photovoltaic device - Google Patents

Photovoltaic device Download PDF

Info

Publication number
WO2010048537A3
WO2010048537A3 PCT/US2009/061898 US2009061898W WO2010048537A3 WO 2010048537 A3 WO2010048537 A3 WO 2010048537A3 US 2009061898 W US2009061898 W US 2009061898W WO 2010048537 A3 WO2010048537 A3 WO 2010048537A3
Authority
WO
WIPO (PCT)
Prior art keywords
banks
compared
front side
solar cells
back side
Prior art date
Application number
PCT/US2009/061898
Other languages
French (fr)
Other versions
WO2010048537A2 (en
Inventor
Isik C. Kizilyalli
Melissa Archer
Harry Atwater
Thomas J. Gmitter
Gang He
Andreas Hegedus
Gregg Higashi
Original Assignee
Alta Devices, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alta Devices, Inc. filed Critical Alta Devices, Inc.
Priority to EP09822792A priority Critical patent/EP2351097A2/en
Priority to CN2009801515411A priority patent/CN102257637A/en
Publication of WO2010048537A2 publication Critical patent/WO2010048537A2/en
Publication of WO2010048537A3 publication Critical patent/WO2010048537A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
PCT/US2009/061898 2008-10-23 2009-10-23 Photovoltaic device WO2010048537A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09822792A EP2351097A2 (en) 2008-10-23 2009-10-23 Photovoltaic device
CN2009801515411A CN102257637A (en) 2008-10-23 2009-10-23 Photovoltaic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10795408P 2008-10-23 2008-10-23
US61/107,954 2008-10-23

Publications (2)

Publication Number Publication Date
WO2010048537A2 WO2010048537A2 (en) 2010-04-29
WO2010048537A3 true WO2010048537A3 (en) 2010-08-05

Family

ID=42120001

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/061898 WO2010048537A2 (en) 2008-10-23 2009-10-23 Photovoltaic device

Country Status (6)

Country Link
US (5) US8937244B2 (en)
EP (1) EP2351097A2 (en)
KR (1) KR20110086098A (en)
CN (1) CN102257637A (en)
TW (1) TW201030998A (en)
WO (1) WO2010048537A2 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US20100012175A1 (en) * 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US20120104460A1 (en) * 2010-11-03 2012-05-03 Alta Devices, Inc. Optoelectronic devices including heterojunction
WO2010048547A2 (en) * 2008-10-23 2010-04-29 Alta Devices, Inc. Photovoltaic device with increased light trapping
EP2351099A2 (en) * 2008-10-23 2011-08-03 Alta Devices, Inc. Photovoltaic device with back side contacts
TW201029196A (en) * 2008-10-23 2010-08-01 Alta Devices Inc Thin absorber layer of a photovoltaic device
US8937244B2 (en) 2008-10-23 2015-01-20 Alta Devices, Inc. Photovoltaic device
CN102257628A (en) * 2008-10-23 2011-11-23 奥塔装置公司 Integration of a photovoltaic device
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20120103406A1 (en) 2010-11-03 2012-05-03 Alta Devices, Inc. Metallic contacts for photovoltaic devices and low temperature fabrication processes thereof
KR101234056B1 (en) * 2011-05-16 2013-02-15 주식회사 석원 Manufacturing method for CIGS solar cell
US20120305059A1 (en) * 2011-06-06 2012-12-06 Alta Devices, Inc. Photon recycling in an optoelectronic device
US9397238B2 (en) 2011-09-19 2016-07-19 First Solar, Inc. Method of etching a semiconductor layer of a photovoltaic device
US20130081681A1 (en) * 2011-10-03 2013-04-04 Epistar Corporation Photovoltaic device
US9018517B2 (en) 2011-11-07 2015-04-28 International Business Machines Corporation Silicon heterojunction photovoltaic device with wide band gap emitter
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
JP5851872B2 (en) * 2012-02-10 2016-02-03 シャープ株式会社 Method for producing compound semiconductor solar cell
WO2014026109A1 (en) * 2012-08-09 2014-02-13 The Board Of Trustees Of The Leland Stanford Junior University Ultra thin film nanostructured solar cell
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
CN108565315A (en) * 2014-08-05 2018-09-21 奥塔装置公司 Thin film semiconductor's photoelectric device with veining front surface and/or back surface
NL2014040B1 (en) * 2014-12-23 2016-10-12 Stichting Energieonderzoek Centrum Nederland Method of making a curent collecting grid for solar cells.
CN106611803B (en) * 2015-10-19 2019-04-23 北京创昱科技有限公司 A kind of solar battery group of solar battery sheet, preparation method and its composition
US9842957B1 (en) * 2016-05-04 2017-12-12 The United States Of America, As Represented By The Secretary Of The Navy AlGaAs/GaAs solar cell with back-surface alternating contacts (GaAs BAC solar cell)
US9865761B1 (en) * 2016-05-04 2018-01-09 The United States Of America, As Represented By The Secretary Of The Navy Emitter-less, back-surface alternating-contact solar cell
CN108155108B (en) * 2017-12-27 2020-01-14 中国科学院长春光学精密机械与物理研究所 Packaging method and packaging structure of zinc oxide ultraviolet detector
CN108172663B (en) * 2017-12-27 2019-12-24 中国科学院长春光学精密机械与物理研究所 Packaging method and packaging structure of ZnMgO solar blind ultraviolet detector
CN109473487B (en) * 2018-12-25 2024-04-02 嘉兴尚能光伏材料科技有限公司 Crystalline silicon solar cell based on composite light trapping structure and preparation method thereof
US11658256B2 (en) * 2019-12-16 2023-05-23 Solaero Technologies Corp. Multijunction solar cells
CN113328009A (en) * 2021-05-28 2021-08-31 扬州乾照光电有限公司 Manufacturing method of solar cell
CN116137306B (en) * 2023-04-18 2023-07-21 南昌凯捷半导体科技有限公司 Micro-LED chip and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595634A1 (en) * 1992-10-30 1994-05-04 Spectrolab, Inc. Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
US20010027805A1 (en) * 1998-05-28 2001-10-11 Frank Ho Solar cell having an integral monolithically grown bypass diode
WO2002065553A1 (en) * 2001-02-09 2002-08-22 Midwest Research Institute Isoelectronic co-doping
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615853A (en) 1970-01-28 1971-10-26 Nasa Solar cell panels with light-transmitting plate
JPS5758075B2 (en) * 1974-10-19 1982-12-08 Sony Corp
US4017332A (en) 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4107723A (en) 1977-05-02 1978-08-15 Hughes Aircraft Company High bandgap window layer for GaAs solar cells and fabrication process therefor
US4094704A (en) 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
FR2404307A1 (en) 1977-09-27 1979-04-20 Centre Nat Etd Spatiales DOUBLE HETEROJUNCTION SOLAR CELLS AND MOUNTING DEVICE
US4197141A (en) 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4410758A (en) 1979-03-29 1983-10-18 Solar Voltaic, Inc. Photovoltaic products and processes
US4295002A (en) 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
US4444992A (en) 1980-11-12 1984-04-24 Massachusetts Institute Of Technology Photovoltaic-thermal collectors
US4338480A (en) 1980-12-29 1982-07-06 Varian Associates, Inc. Stacked multijunction photovoltaic converters
US4385198A (en) 1981-07-08 1983-05-24 The United States Of America As Represented By The Secretary Of The Air Force Gallium arsenide-germanium heteroface junction device
US4400221A (en) 1981-07-08 1983-08-23 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of gallium arsenide-germanium heteroface junction device
US4571448A (en) 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4479027A (en) 1982-09-24 1984-10-23 Todorof William J Multi-layer thin-film, flexible silicon alloy photovoltaic cell
US4497974A (en) 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
JPS59147469A (en) 1983-02-14 1984-08-23 Hitachi Ltd Amorphous silicon solar cell
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell
US4633030A (en) 1985-08-05 1986-12-30 Holobeam, Inc. Photovoltaic cells on lattice-mismatched crystal substrates
US4667059A (en) 1985-10-22 1987-05-19 The United States Of America As Represented By The United States Department Of Energy Current and lattice matched tandem solar cell
JPS63160384A (en) 1986-12-24 1988-07-04 Mitsubishi Electric Corp Manufacture of gaas solar cell
JPS63211775A (en) 1987-02-27 1988-09-02 Mitsubishi Electric Corp Compound semiconductor solar cell
JP2732524B2 (en) 1987-07-08 1998-03-30 株式会社日立製作所 Photoelectric conversion device
US5116427A (en) 1987-08-20 1992-05-26 Kopin Corporation High temperature photovoltaic cell
US4889656A (en) 1987-10-30 1989-12-26 Minnesota Mining And Manufacturing Company Perfluoro(cycloaliphatic methyleneoxyalkylene) carbonyl fluorides and derivatives thereof
US4989059A (en) 1988-05-13 1991-01-29 Mobil Solar Energy Corporation Solar cell with trench through pn junction
JPH02135786A (en) 1988-11-16 1990-05-24 Mitsubishi Electric Corp Solar battery cell
US5103268A (en) 1989-03-30 1992-04-07 Siemens Solar Industries, L.P. Semiconductor device with interfacial electrode layer
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5101260A (en) 1989-05-01 1992-03-31 Energy Conversion Devices, Inc. Multilayer light scattering photovoltaic back reflector and method of making same
US5136351A (en) 1990-03-30 1992-08-04 Sharp Kabushiki Kaisha Photovoltaic device with porous metal layer
JP2722761B2 (en) 1990-04-02 1998-03-09 日立電線株式会社 GaAs solar cell
US5223043A (en) 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5385960A (en) 1991-12-03 1995-01-31 Rohm And Haas Company Process for controlling adsorption of polymeric latex on titanium dioxide
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US5465009A (en) 1992-04-08 1995-11-07 Georgia Tech Research Corporation Processes and apparatus for lift-off and bonding of materials and devices
US5342453A (en) 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
US5316593A (en) 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
EP0617303A1 (en) 1993-03-19 1994-09-28 Akzo Nobel N.V. A method of integrating a semiconductor component with a polymeric optical waveguide component, and an electro-optical device comprising an integrated structure so attainable
US5376185A (en) 1993-05-12 1994-12-27 Midwest Research Institute Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
US5468652A (en) * 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell
JP3646940B2 (en) 1994-11-01 2005-05-11 松下電器産業株式会社 Solar cell
US6166218A (en) 1996-11-07 2000-12-26 Ciba Specialty Chemicals Corporation Benzotriazole UV absorbers having enhanced durability
DE69828936T2 (en) * 1997-10-27 2006-04-13 Sharp K.K. Photoelectric converter and its manufacturing method
US6231931B1 (en) 1998-03-02 2001-05-15 John S. Blazey Method of coating a substrate with a structural polymer overlay
US6166318A (en) 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6103970A (en) 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
US6229084B1 (en) * 1998-09-28 2001-05-08 Sharp Kabushiki Kaisha Space solar cell
US6150603A (en) * 1999-04-23 2000-11-21 Hughes Electronics Corporation Bilayer passivation structure for photovoltaic cells
JP3619053B2 (en) 1999-05-21 2005-02-09 キヤノン株式会社 Method for manufacturing photoelectric conversion device
JP2001127326A (en) * 1999-08-13 2001-05-11 Oki Electric Ind Co Ltd Semiconductor substrate, method of manufacturing the same, solar cell using the same and manufacturing method thereof
US6858462B2 (en) 2000-04-11 2005-02-22 Gratings, Inc. Enhanced light absorption of solar cells and photodetectors by diffraction
US6368929B1 (en) 2000-08-17 2002-04-09 Motorola, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
US20030070707A1 (en) 2001-10-12 2003-04-17 King Richard Roland Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device
US6864414B2 (en) 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
WO2003073517A1 (en) 2002-02-27 2003-09-04 Midwest Research Institute Monolithic photovoltaic energy conversion device
US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
TW538481B (en) 2002-06-04 2003-06-21 Univ Nat Cheng Kung InGaP/AlGaAs/GaAs hetero-junction bipolar transistor with zero conduction band discontinuity
US20060162767A1 (en) * 2002-08-16 2006-07-27 Angelo Mascarenhas Multi-junction, monolithic solar cell with active silicon substrate
AU2003297649A1 (en) 2002-12-05 2004-06-30 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
JP2004193350A (en) 2002-12-11 2004-07-08 Sharp Corp Solar battery cell and its manufacturing method
US7812249B2 (en) 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
US8664525B2 (en) 2003-05-07 2014-03-04 Imec Germanium solar cell and method for the production thereof
US7038250B2 (en) 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier
US7659475B2 (en) 2003-06-20 2010-02-09 Imec Method for backside surface passivation of solar cells and solar cells with such passivation
TWI261934B (en) 2003-09-09 2006-09-11 Asahi Kasei Emd Corp Infrared sensing IC, infrared sensor and method for producing the same
EP1724840B1 (en) 2004-02-20 2013-05-08 Sharp Kabushiki Kaisha Photoelectric cell
MXPA06015018A (en) 2004-07-07 2007-03-12 Saint Gobain Photovoltaic solar cell and solar module.
US7566948B2 (en) 2004-10-20 2009-07-28 Kopin Corporation Bipolar transistor with enhanced base transport
JP4959127B2 (en) * 2004-10-29 2012-06-20 三菱重工業株式会社 Photoelectric conversion device and substrate for photoelectric conversion device
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US11211510B2 (en) 2005-12-13 2021-12-28 The Boeing Company Multijunction solar cell with bonded transparent conductive interlayer
KR20070063731A (en) 2005-12-15 2007-06-20 엘지전자 주식회사 Method of fabricating substrate with nano pattern and light emitting device using the substrate
US10069026B2 (en) 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
US7863157B2 (en) 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US8937243B2 (en) 2006-10-09 2015-01-20 Solexel, Inc. Structures and methods for high-efficiency pyramidal three-dimensional solar cells
JP4986138B2 (en) 2006-11-15 2012-07-25 独立行政法人産業技術総合研究所 Method for manufacturing mold for optical element having antireflection structure
US20080128020A1 (en) 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
US20080245409A1 (en) 2006-12-27 2008-10-09 Emcore Corporation Inverted Metamorphic Solar Cell Mounted on Flexible Film
JP2008181965A (en) 2007-01-23 2008-08-07 Sharp Corp Laminated optoelectric converter and its fabrication process
US8257998B2 (en) 2007-02-15 2012-09-04 Massachusetts Institute Of Technology Solar cells with textured surfaces
US20100006143A1 (en) 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
EP1993143A1 (en) 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor component, method for its production and application
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US7875945B2 (en) 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
US20120125256A1 (en) 2007-10-06 2012-05-24 Solexel, Inc. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
US8198528B2 (en) 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US8193609B2 (en) 2008-05-15 2012-06-05 Triquint Semiconductor, Inc. Heterojunction bipolar transistor device with electrostatic discharge ruggedness
CN102150277A (en) 2008-06-11 2011-08-10 因特瓦克公司 Solar cell fabrication with faceting and ion implantation
US8183081B2 (en) 2008-07-16 2012-05-22 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
WO2010032933A2 (en) 2008-09-16 2010-03-25 Lg Electronics Inc. Solar cell and texturing method thereof
WO2010036805A2 (en) 2008-09-24 2010-04-01 Massachusetts Institute Of Technology Photon processing with nanopatterned materials
US8866005B2 (en) 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells
CN102257628A (en) 2008-10-23 2011-11-23 奥塔装置公司 Integration of a photovoltaic device
EP2351099A2 (en) 2008-10-23 2011-08-03 Alta Devices, Inc. Photovoltaic device with back side contacts
US8937244B2 (en) 2008-10-23 2015-01-20 Alta Devices, Inc. Photovoltaic device
WO2010048547A2 (en) 2008-10-23 2010-04-29 Alta Devices, Inc. Photovoltaic device with increased light trapping
TW201029196A (en) 2008-10-23 2010-08-01 Alta Devices Inc Thin absorber layer of a photovoltaic device
US20130288418A1 (en) 2008-11-13 2013-10-31 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
US20100132774A1 (en) 2008-12-11 2010-06-03 Applied Materials, Inc. Thin Film Silicon Solar Cell Device With Amorphous Window Layer
JP5559704B2 (en) 2009-02-03 2014-07-23 株式会社カネカ MANUFACTURING METHOD FOR SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM, MULTI-JUNCTION TYPE THIN-FILM PHOTOELECTRIC CONVERSION DEVICE AND LIGHT-EMITTING DEVICE
DE102009011306A1 (en) 2009-03-02 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Both sides contacted solar cells and processes for their preparation
US8664515B2 (en) 2009-03-16 2014-03-04 National Cheng Kung University Solar concentrator
US9099584B2 (en) 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
DE102009042018A1 (en) 2009-09-21 2011-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. solar cell
CN102044593A (en) 2009-10-19 2011-05-04 杜邦太阳能有限公司 Process of manufacturing TCO substrate with light trapping feature and device thereof
EP2341558B1 (en) 2009-12-30 2019-04-24 IMEC vzw Method of manufacturing a semiconductor device
US8604332B2 (en) 2010-03-04 2013-12-10 Guardian Industries Corp. Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same
US8999857B2 (en) 2010-04-02 2015-04-07 The Board Of Trustees Of The Leland Stanford Junior University Method for forming a nano-textured substrate
US20120024336A1 (en) 2010-07-27 2012-02-02 Jeong-Mo Hwang Charge control of solar cell passivation layers
KR101820327B1 (en) 2010-08-07 2018-01-19 티피케이 홀딩 컴퍼니 리미티드 Device components with surface-embedded additives and related manufacturing methods
US8642883B2 (en) 2010-08-09 2014-02-04 The Boeing Company Heterojunction solar cell
NL2005261C2 (en) 2010-08-24 2012-02-27 Solland Solar Cells B V Back contacted photovoltaic cell with an improved shunt resistance.
US9178105B2 (en) 2010-09-21 2015-11-03 Amberwave Inc. Flexible monocrystalline thin silicon cell
US20120104411A1 (en) 2010-10-29 2012-05-03 The Regents Of The University Of California Textured iii-v semiconductor
US9337366B2 (en) 2011-07-26 2016-05-10 Micron Technology, Inc. Textured optoelectronic devices and associated methods of manufacture
US20120160296A1 (en) 2011-09-30 2012-06-28 Olivier Laparra Textured photovoltaic cells and methods
KR20130049024A (en) 2011-11-03 2013-05-13 삼성에스디아이 주식회사 Solar cell
US9099595B2 (en) 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11646388B2 (en) 2012-09-14 2023-05-09 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9530911B2 (en) 2013-03-14 2016-12-27 The Boeing Company Solar cell structures for improved current generation and collection
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
US20150171261A1 (en) 2013-12-17 2015-06-18 Tel Solar Ag Transparent conductive oxide (tco) layer, and systems, apparatuses and methods for fabricating a transparent conductive oxide (tco) layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595634A1 (en) * 1992-10-30 1994-05-04 Spectrolab, Inc. Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
US20010027805A1 (en) * 1998-05-28 2001-10-11 Frank Ho Solar cell having an integral monolithically grown bypass diode
WO2002065553A1 (en) * 2001-02-09 2002-08-22 Midwest Research Institute Isoelectronic co-doping
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure

Also Published As

Publication number Publication date
US20190259888A1 (en) 2019-08-22
US8895845B2 (en) 2014-11-25
US8895846B2 (en) 2014-11-25
CN102257637A (en) 2011-11-23
US10326033B2 (en) 2019-06-18
US20110048532A1 (en) 2011-03-03
US20110056553A1 (en) 2011-03-10
US20130153013A1 (en) 2013-06-20
WO2010048537A2 (en) 2010-04-29
US8937244B2 (en) 2015-01-20
KR20110086098A (en) 2011-07-27
EP2351097A2 (en) 2011-08-03
US20100132780A1 (en) 2010-06-03
TW201030998A (en) 2010-08-16
US10505058B2 (en) 2019-12-10

Similar Documents

Publication Publication Date Title
WO2010048537A3 (en) Photovoltaic device
WO2010048555A3 (en) Integration of a photovoltaic device
WO2010048550A3 (en) Photovoltaic device with back side contacts
WO2007041533A3 (en) Photovoltaic module with improved backplane
WO2010048547A3 (en) Photovoltaic device with increased light trapping
WO2010048543A3 (en) Thin absorber layer of a photovoltaic device
WO2006102317A3 (en) Multi-junction solar cells with an aplanatic imaging system
WO2010127348A3 (en) Device and method for converting incident radiation into electrical energy using an upconversion photoluminescent solar concentrator
WO2009067526A3 (en) High-efficiency, high current solar cell and solar module
ATE498203T1 (en) PHOTOVOLTAIC TANDEM CELL
WO2011048595A3 (en) Window
TW200802902A (en) Systems and methods for enhanced solar module conversion efficiency
WO2008156521A3 (en) Textured rear electrode structure for use in photovoltaic device such as cigs/cis solar cell
WO2009042116A3 (en) An encapsulated photovoltaic device used with a reflector and a method of use for the same
WO2009049048A3 (en) Solar modules with enhanced efficiencies via use of spectral concentrators
WO2008073908A3 (en) Photovoltaic cells, modules and methods of making same
WO2007035466A3 (en) Solar collection devices
WO2010120233A3 (en) Multi-junction photovoltaic cell with nanowires
WO2009129156A3 (en) Multi-junction solar array
ES2753632T3 (en) Method for rapid stabilization of the nominal power of a thin-film solar module
WO2010146583A3 (en) Electrical grid solar energy harvesting system
WO2012037379A3 (en) Single and multi-junction light and carrier collection management cells
WO2009071300A3 (en) Photovoltaic device and use thereof
EP3770973A4 (en) Solar cell, multi-junction solar cell, solar cell module and solar photovoltaic power generation system
Haloui et al. The copper indium selenium (CuInSe2) thin Films solar cells for hybrid photovoltaic thermal collectors (PVT)

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980151541.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09822792

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009822792

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20117011464

Country of ref document: KR

Kind code of ref document: A