WO2010048543A3 - Thin absorber layer of a photovoltaic device - Google Patents
Thin absorber layer of a photovoltaic device Download PDFInfo
- Publication number
- WO2010048543A3 WO2010048543A3 PCT/US2009/061906 US2009061906W WO2010048543A3 WO 2010048543 A3 WO2010048543 A3 WO 2010048543A3 US 2009061906 W US2009061906 W US 2009061906W WO 2010048543 A3 WO2010048543 A3 WO 2010048543A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- doped layer
- absorber layer
- photovoltaic device
- thin absorber
- Prior art date
Links
- 239000006096 absorbing agent Substances 0.000 title abstract 3
- 230000005670 electromagnetic radiation Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801514993A CN102257635A (en) | 2008-10-23 | 2009-10-23 | Thin absorber layer of a photovoltaic device |
EP09822796A EP2351098A2 (en) | 2008-10-23 | 2009-10-23 | Thin absorber layer of a photovoltaic device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10795908P | 2008-10-23 | 2008-10-23 | |
US61/107,959 | 2008-10-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010048543A2 WO2010048543A2 (en) | 2010-04-29 |
WO2010048543A3 true WO2010048543A3 (en) | 2010-07-22 |
Family
ID=42120002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/061906 WO2010048543A2 (en) | 2008-10-23 | 2009-10-23 | Thin absorber layer of a photovoltaic device |
Country Status (6)
Country | Link |
---|---|
US (3) | US8674214B2 (en) |
EP (1) | EP2351098A2 (en) |
KR (1) | KR20110086097A (en) |
CN (1) | CN102257635A (en) |
TW (1) | TW201029196A (en) |
WO (1) | WO2010048543A2 (en) |
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US8772628B2 (en) | 2004-12-30 | 2014-07-08 | Alliance For Sustainable Energy, Llc | High performance, high bandgap, lattice-mismatched, GaInP solar cells |
US20120104460A1 (en) | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
CN102257635A (en) * | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | Thin absorber layer of a photovoltaic device |
EP2351097A2 (en) | 2008-10-23 | 2011-08-03 | Alta Devices, Inc. | Photovoltaic device |
US8686284B2 (en) * | 2008-10-23 | 2014-04-01 | Alta Devices, Inc. | Photovoltaic device with increased light trapping |
CN102257636A (en) * | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | Photovoltaic device with back side contacts |
CN102257628A (en) * | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | Integration of a photovoltaic device |
US9691921B2 (en) | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
US20170141256A1 (en) | 2009-10-23 | 2017-05-18 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
US20150380576A1 (en) | 2010-10-13 | 2015-12-31 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
EP2702616B1 (en) * | 2011-04-29 | 2022-06-29 | Amberwave, Inc. | Thin film intermetallic bond |
US20120305059A1 (en) * | 2011-06-06 | 2012-12-06 | Alta Devices, Inc. | Photon recycling in an optoelectronic device |
US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
KR101429118B1 (en) * | 2013-02-04 | 2014-08-14 | 한국과학기술연구원 | Antireflection coating using self-assembly nano structure and manufacture method therof |
US9590131B2 (en) | 2013-03-27 | 2017-03-07 | Alliance For Sustainable Energy, Llc | Systems and methods for advanced ultra-high-performance InP solar cells |
KR20150014298A (en) * | 2013-07-29 | 2015-02-06 | 엘지전자 주식회사 | Compound semiconductor solar cell |
GB2517186A (en) * | 2013-08-14 | 2015-02-18 | Norwegian University Of Science And Technology | Radial P-N junction nanowire solar cells |
CN106611803B (en) * | 2015-10-19 | 2019-04-23 | 北京创昱科技有限公司 | A kind of solar battery group of solar battery sheet, preparation method and its composition |
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2009
- 2009-10-23 CN CN2009801514993A patent/CN102257635A/en active Pending
- 2009-10-23 WO PCT/US2009/061906 patent/WO2010048543A2/en active Application Filing
- 2009-10-23 KR KR1020117011461A patent/KR20110086097A/en not_active Application Discontinuation
- 2009-10-23 EP EP09822796A patent/EP2351098A2/en not_active Withdrawn
- 2009-10-23 TW TW098136006A patent/TW201029196A/en unknown
- 2009-10-23 US US12/605,129 patent/US8674214B2/en active Active
-
2010
- 2010-11-05 US US12/940,955 patent/US8912432B2/en active Active
- 2010-11-05 US US12/940,918 patent/US8669467B2/en active Active
Patent Citations (4)
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EP0595634A1 (en) * | 1992-10-30 | 1994-05-04 | Spectrolab, Inc. | Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell |
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Also Published As
Publication number | Publication date |
---|---|
WO2010048543A2 (en) | 2010-04-29 |
CN102257635A (en) | 2011-11-23 |
US20110041904A1 (en) | 2011-02-24 |
TW201029196A (en) | 2010-08-01 |
US20110056546A1 (en) | 2011-03-10 |
US20100126570A1 (en) | 2010-05-27 |
US8674214B2 (en) | 2014-03-18 |
US8669467B2 (en) | 2014-03-11 |
EP2351098A2 (en) | 2011-08-03 |
KR20110086097A (en) | 2011-07-27 |
US8912432B2 (en) | 2014-12-16 |
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