WO2010048547A3 - Photovoltaic device with increased light trapping - Google Patents

Photovoltaic device with increased light trapping Download PDF

Info

Publication number
WO2010048547A3
WO2010048547A3 PCT/US2009/061911 US2009061911W WO2010048547A3 WO 2010048547 A3 WO2010048547 A3 WO 2010048547A3 US 2009061911 W US2009061911 W US 2009061911W WO 2010048547 A3 WO2010048547 A3 WO 2010048547A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
light trapping
front side
back side
trapping techniques
Prior art date
Application number
PCT/US2009/061911
Other languages
French (fr)
Other versions
WO2010048547A2 (en
Inventor
Isik C. Kizilyalli
Melissa Archer
Harry Atwater
Thomas J. Gmitter
Gang He
Andreas Hegedus
Gregg Higashi
Original Assignee
Alta Devices, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alta Devices, Inc. filed Critical Alta Devices, Inc.
Publication of WO2010048547A2 publication Critical patent/WO2010048547A2/en
Publication of WO2010048547A3 publication Critical patent/WO2010048547A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.
PCT/US2009/061911 2008-10-23 2009-10-23 Photovoltaic device with increased light trapping WO2010048547A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10796208P 2008-10-23 2008-10-23
US61/107,962 2008-10-23

Publications (2)

Publication Number Publication Date
WO2010048547A2 WO2010048547A2 (en) 2010-04-29
WO2010048547A3 true WO2010048547A3 (en) 2010-07-22

Family

ID=42120003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/061911 WO2010048547A2 (en) 2008-10-23 2009-10-23 Photovoltaic device with increased light trapping

Country Status (3)

Country Link
US (2) US8686284B2 (en)
TW (1) TW201031006A (en)
WO (1) WO2010048547A2 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
TW201029196A (en) * 2008-10-23 2010-08-01 Alta Devices Inc Thin absorber layer of a photovoltaic device
WO2010048547A2 (en) * 2008-10-23 2010-04-29 Alta Devices, Inc. Photovoltaic device with increased light trapping
CN102257628A (en) * 2008-10-23 2011-11-23 奥塔装置公司 Integration of a photovoltaic device
US20120104460A1 (en) 2010-11-03 2012-05-03 Alta Devices, Inc. Optoelectronic devices including heterojunction
US8937244B2 (en) * 2008-10-23 2015-01-20 Alta Devices, Inc. Photovoltaic device
EP2351099A2 (en) * 2008-10-23 2011-08-03 Alta Devices, Inc. Photovoltaic device with back side contacts
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US20160155881A1 (en) * 2009-10-23 2016-06-02 Alta Devices, Inc. Thin film iii-v optoelectronic device optimized for non-solar illumination sources
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20130270589A1 (en) * 2012-04-13 2013-10-17 Alta Devices, Inc. Optoelectronic device with non-continuous back contacts
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US20120305059A1 (en) * 2011-06-06 2012-12-06 Alta Devices, Inc. Photon recycling in an optoelectronic device
US9397238B2 (en) 2011-09-19 2016-07-19 First Solar, Inc. Method of etching a semiconductor layer of a photovoltaic device
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
CN103474504B (en) * 2012-06-06 2016-09-07 浙江昱辉阳光能源江苏有限公司 A kind of prepare the method for reflectance coating, solar panel and crystal silicon chip thereof
GB201215344D0 (en) 2012-08-29 2012-10-10 Ibm Light-reflecting grating structure for photvoltaic devices
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
CN104795454B (en) * 2014-12-26 2017-05-03 天津蓝天太阳科技有限公司 Gallium arsenide solar cell top cell window layer nano cone structure and preparation method thereof
CN106374001B (en) * 2015-07-20 2018-01-09 中国科学院苏州纳米技术与纳米仿生研究所 GaAs thin film solar cells with taper back-scattering layer and preparation method thereof
GR20150100472A (en) * 2015-10-30 2017-07-03 Πανεπιστημιο Πατρων Polycrystalline silicon water with configured microstructures on their surfaces for improving solar absorption
RU170349U1 (en) * 2016-11-07 2017-04-21 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук GaAs-Based Photoconverter
RU2646547C1 (en) * 2016-11-22 2018-03-05 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Laser radiation photoconverter

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595634A1 (en) * 1992-10-30 1994-05-04 Spectrolab, Inc. Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
US20010027805A1 (en) * 1998-05-28 2001-10-11 Frank Ho Solar cell having an integral monolithically grown bypass diode
WO2002065553A1 (en) * 2001-02-09 2002-08-22 Midwest Research Institute Isoelectronic co-doping
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017332A (en) 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US4107723A (en) 1977-05-02 1978-08-15 Hughes Aircraft Company High bandgap window layer for GaAs solar cells and fabrication process therefor
US4094704A (en) 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
FR2404307A1 (en) 1977-09-27 1979-04-20 Centre Nat Etd Spatiales DOUBLE HETEROJUNCTION SOLAR CELLS AND MOUNTING DEVICE
US4197141A (en) 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4410758A (en) 1979-03-29 1983-10-18 Solar Voltaic, Inc. Photovoltaic products and processes
US4295002A (en) 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
US4444992A (en) 1980-11-12 1984-04-24 Massachusetts Institute Of Technology Photovoltaic-thermal collectors
US4338480A (en) 1980-12-29 1982-07-06 Varian Associates, Inc. Stacked multijunction photovoltaic converters
US4400221A (en) 1981-07-08 1983-08-23 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of gallium arsenide-germanium heteroface junction device
US4385198A (en) * 1981-07-08 1983-05-24 The United States Of America As Represented By The Secretary Of The Air Force Gallium arsenide-germanium heteroface junction device
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4479027A (en) 1982-09-24 1984-10-23 Todorof William J Multi-layer thin-film, flexible silicon alloy photovoltaic cell
US4497974A (en) 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
US4633030A (en) 1985-08-05 1986-12-30 Holobeam, Inc. Photovoltaic cells on lattice-mismatched crystal substrates
US4667059A (en) 1985-10-22 1987-05-19 The United States Of America As Represented By The United States Department Of Energy Current and lattice matched tandem solar cell
JP2732524B2 (en) 1987-07-08 1998-03-30 株式会社日立製作所 Photoelectric conversion device
US5116427A (en) * 1987-08-20 1992-05-26 Kopin Corporation High temperature photovoltaic cell
US4889656A (en) 1987-10-30 1989-12-26 Minnesota Mining And Manufacturing Company Perfluoro(cycloaliphatic methyleneoxyalkylene) carbonyl fluorides and derivatives thereof
US4989059A (en) * 1988-05-13 1991-01-29 Mobil Solar Energy Corporation Solar cell with trench through pn junction
JPH02135786A (en) 1988-11-16 1990-05-24 Mitsubishi Electric Corp Solar battery cell
US5217539A (en) 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5223043A (en) 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5385960A (en) 1991-12-03 1995-01-31 Rohm And Haas Company Process for controlling adsorption of polymeric latex on titanium dioxide
US5342453A (en) 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
US5316593A (en) 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
EP0617303A1 (en) 1993-03-19 1994-09-28 Akzo Nobel N.V. A method of integrating a semiconductor component with a polymeric optical waveguide component, and an electro-optical device comprising an integrated structure so attainable
US5376185A (en) 1993-05-12 1994-12-27 Midwest Research Institute Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
US6166218A (en) 1996-11-07 2000-12-26 Ciba Specialty Chemicals Corporation Benzotriazole UV absorbers having enhanced durability
DE69828936T2 (en) 1997-10-27 2006-04-13 Sharp K.K. Photoelectric converter and its manufacturing method
US6231931B1 (en) 1998-03-02 2001-05-15 John S. Blazey Method of coating a substrate with a structural polymer overlay
US6166318A (en) 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6103970A (en) 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
US6229084B1 (en) 1998-09-28 2001-05-08 Sharp Kabushiki Kaisha Space solar cell
US6150603A (en) 1999-04-23 2000-11-21 Hughes Electronics Corporation Bilayer passivation structure for photovoltaic cells
JP2001127326A (en) * 1999-08-13 2001-05-11 Oki Electric Ind Co Ltd Semiconductor substrate, method of manufacturing the same, solar cell using the same and manufacturing method thereof
US6368929B1 (en) 2000-08-17 2002-04-09 Motorola, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
US20030070707A1 (en) 2001-10-12 2003-04-17 King Richard Roland Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device
US6864414B2 (en) 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
WO2003073517A1 (en) 2002-02-27 2003-09-04 Midwest Research Institute Monolithic photovoltaic energy conversion device
US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
TW538481B (en) 2002-06-04 2003-06-21 Univ Nat Cheng Kung InGaP/AlGaAs/GaAs hetero-junction bipolar transistor with zero conduction band discontinuity
US20060162767A1 (en) 2002-08-16 2006-07-27 Angelo Mascarenhas Multi-junction, monolithic solar cell with active silicon substrate
US8664525B2 (en) * 2003-05-07 2014-03-04 Imec Germanium solar cell and method for the production thereof
TWI261934B (en) 2003-09-09 2006-09-11 Asahi Kasei Emd Corp Infrared sensing IC, infrared sensor and method for producing the same
US7566948B2 (en) 2004-10-20 2009-07-28 Kopin Corporation Bipolar transistor with enhanced base transport
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US10069026B2 (en) 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
US20080245409A1 (en) 2006-12-27 2008-10-09 Emcore Corporation Inverted Metamorphic Solar Cell Mounted on Flexible Film
US20100006143A1 (en) 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
US8193609B2 (en) 2008-05-15 2012-06-05 Triquint Semiconductor, Inc. Heterojunction bipolar transistor device with electrostatic discharge ruggedness
US8866005B2 (en) 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells
TW201029196A (en) 2008-10-23 2010-08-01 Alta Devices Inc Thin absorber layer of a photovoltaic device
CN102257628A (en) 2008-10-23 2011-11-23 奥塔装置公司 Integration of a photovoltaic device
EP2351099A2 (en) 2008-10-23 2011-08-03 Alta Devices, Inc. Photovoltaic device with back side contacts
US8937244B2 (en) 2008-10-23 2015-01-20 Alta Devices, Inc. Photovoltaic device
WO2010048547A2 (en) 2008-10-23 2010-04-29 Alta Devices, Inc. Photovoltaic device with increased light trapping
US20100132774A1 (en) 2008-12-11 2010-06-03 Applied Materials, Inc. Thin Film Silicon Solar Cell Device With Amorphous Window Layer
US8642883B2 (en) 2010-08-09 2014-02-04 The Boeing Company Heterojunction solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595634A1 (en) * 1992-10-30 1994-05-04 Spectrolab, Inc. Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
US20010027805A1 (en) * 1998-05-28 2001-10-11 Frank Ho Solar cell having an integral monolithically grown bypass diode
WO2002065553A1 (en) * 2001-02-09 2002-08-22 Midwest Research Institute Isoelectronic co-doping
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure

Also Published As

Publication number Publication date
WO2010048547A2 (en) 2010-04-29
US20110048519A1 (en) 2011-03-03
US20100126571A1 (en) 2010-05-27
US8895847B2 (en) 2014-11-25
TW201031006A (en) 2010-08-16
US8686284B2 (en) 2014-04-01

Similar Documents

Publication Publication Date Title
WO2010048547A3 (en) Photovoltaic device with increased light trapping
WO2010048550A3 (en) Photovoltaic device with back side contacts
WO2010048537A3 (en) Photovoltaic device
WO2010048543A3 (en) Thin absorber layer of a photovoltaic device
WO2010127348A3 (en) Device and method for converting incident radiation into electrical energy using an upconversion photoluminescent solar concentrator
WO2010048555A3 (en) Integration of a photovoltaic device
WO2010083120A3 (en) Photovoltaic (pv) enhancement films for enhancing optical path lengths and methods of manufacturing pv enhancement films
CN102280512A (en) Solar cell module with high conversion efficiency
WO2011048595A3 (en) Window
WO2009108408A8 (en) Hybrid solar concentrator
CN201936904U (en) Solar battery pack structure capable of improving efficiency of battery
WO2009151679A3 (en) Integrated solar cell with wavelength conversion layers and light guiding and concentrating layers
WO2009049048A3 (en) Solar modules with enhanced efficiencies via use of spectral concentrators
WO2009002943A3 (en) Solar modules with enhanced efficiencies via use of spectral concentrators
WO2007082517A3 (en) Concentrator photovoltaics device with positioning aid
WO2009129156A3 (en) Multi-junction solar array
WO2010104890A3 (en) Efficiency enhancement of solar cells using light management
US20150155410A1 (en) High efficiency double-glass solar modules
WO2010012832A3 (en) Solar concentrator
Mirzaei et al. Design and optimization of graphene quantum dot-based luminescent solar concentrator using Monte-Carlo simulation
WO2010127661A3 (en) Solar system for generating electric and thermal energy
WO2011041653A3 (en) Encapsulant material for photovoltaic modules
WO2012030744A3 (en) Combined heat and power solar system
Seifert et al. Light management in solar modules
WO2011110329A3 (en) Photovoltaic element with optically functional conversion layer for improving the conversion of the incident light and method for producing said photovoltaic element

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09822799

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09822799

Country of ref document: EP

Kind code of ref document: A2