WO2011016940A3 - Group iii-nitride semiconductor device and method of manufacturing the same - Google Patents

Group iii-nitride semiconductor device and method of manufacturing the same Download PDF

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Publication number
WO2011016940A3
WO2011016940A3 PCT/US2010/041202 US2010041202W WO2011016940A3 WO 2011016940 A3 WO2011016940 A3 WO 2011016940A3 US 2010041202 W US2010041202 W US 2010041202W WO 2011016940 A3 WO2011016940 A3 WO 2011016940A3
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WIPO (PCT)
Prior art keywords
group iii
nitride semiconductor
forming
manufacturing
semiconductor device
Prior art date
Application number
PCT/US2010/041202
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French (fr)
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WO2011016940A2 (en
Inventor
R. Peter Smith
Scott T. Sheppard
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Cree, Inc.
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Publication date
Application filed by Cree, Inc. filed Critical Cree, Inc.
Priority to DE112010003087.1T priority Critical patent/DE112010003087B4/en
Priority to JP2012522847A priority patent/JP5767637B2/en
Publication of WO2011016940A2 publication Critical patent/WO2011016940A2/en
Publication of WO2011016940A3 publication Critical patent/WO2011016940A3/en

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices

Abstract

Methods of forming Group III-nitride transistor device include forming a protective layer on a Group III-nitride semiconductor layer, forming a via hole through the protective layer to expose a portion of the Group III-nitride semiconductor layer, and forming a masking gate on the protective layer. The masking gate includes an upper portion having a width that is larger than a width of the via hole and having a lower portion extending into the via hole. The methods further include implanting source/drain regions in the Group III-nitride semiconductor layer using the masking gate as an implant mask.
PCT/US2010/041202 2009-07-27 2010-07-07 Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions WO2011016940A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112010003087.1T DE112010003087B4 (en) 2009-07-27 2010-07-07 Method of forming transistor devices from Group III nitride
JP2012522847A JP5767637B2 (en) 2009-07-27 2010-07-07 Group III nitride semiconductor device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/509,855 2009-07-27
US12/509,855 US8105889B2 (en) 2009-07-27 2009-07-27 Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions

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WO2011016940A2 WO2011016940A2 (en) 2011-02-10
WO2011016940A3 true WO2011016940A3 (en) 2011-05-19

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US (1) US8105889B2 (en)
JP (1) JP5767637B2 (en)
DE (1) DE112010003087B4 (en)
WO (1) WO2011016940A2 (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8497527B2 (en) * 2008-03-12 2013-07-30 Sensor Electronic Technology, Inc. Device having active region with lower electron concentration
JP2010118556A (en) * 2008-11-13 2010-05-27 Furukawa Electric Co Ltd:The Semiconductor device and its manufacturing method
JP2011082216A (en) * 2009-10-02 2011-04-21 Fujitsu Ltd Compound semiconductor device and method for manufacturing the same
JP5625336B2 (en) * 2009-11-30 2014-11-19 サンケン電気株式会社 Semiconductor device
JP5694020B2 (en) 2011-03-18 2015-04-01 トランスフォーム・ジャパン株式会社 Transistor circuit
US9142662B2 (en) * 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9070758B2 (en) 2011-06-20 2015-06-30 Imec CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof
TWI508281B (en) * 2011-08-01 2015-11-11 Murata Manufacturing Co Field effect transistor
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
JP5825018B2 (en) 2011-09-29 2015-12-02 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP5998446B2 (en) 2011-09-29 2016-09-28 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP5810921B2 (en) * 2012-01-06 2015-11-11 凸版印刷株式会社 Manufacturing method of semiconductor device
US8680536B2 (en) 2012-05-23 2014-03-25 Hrl Laboratories, Llc Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
US9000484B2 (en) * 2012-05-23 2015-04-07 Hrl Laboratories, Llc Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
US9379195B2 (en) * 2012-05-23 2016-06-28 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US10700201B2 (en) 2012-05-23 2020-06-30 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US9099490B2 (en) 2012-09-28 2015-08-04 Intel Corporation Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
CN103022135B (en) * 2012-12-14 2015-08-26 中国科学院微电子研究所 A kind of Group III-V semiconductor nanowire crystal tube device and preparation method thereof
DE102013006624B3 (en) * 2013-04-18 2014-05-28 Forschungszentrum Jülich GmbH High-frequency conductor with improved conductivity and method of its production
US9202880B1 (en) * 2013-04-23 2015-12-01 Hrl Laboratories, Llc Etch-based fabrication process for stepped field-plate wide-bandgap
US8916427B2 (en) * 2013-05-03 2014-12-23 Texas Instruments Incorporated FET dielectric reliability enhancement
US9761438B1 (en) * 2014-05-08 2017-09-12 Hrl Laboratories, Llc Method for manufacturing a semiconductor structure having a passivated III-nitride layer
EP3180803A4 (en) * 2014-08-13 2018-04-11 Intel Corporation Self-aligned gate last iii-n transistors
JP2016062936A (en) * 2014-09-16 2016-04-25 株式会社東芝 Semiconductor device manufacturing method
US10170611B1 (en) * 2016-06-24 2019-01-01 Hrl Laboratories, Llc T-gate field effect transistor with non-linear channel layer and/or gate foot face
IT201700064147A1 (en) 2017-06-09 2018-12-09 St Microelectronics Srl HEMT TRANSISTOR NORMALLY OFF WITH SELECTIVE GENERATION OF 2DEG CHANNEL AND RELATIVE MANUFACTURING METHOD
EP3676882B1 (en) 2017-08-31 2021-06-30 Google LLC Fabricating a device using a multilayer stack
CN108597997B (en) 2018-02-28 2021-03-23 中国电子科技集团公司第十三研究所 Preparation method of ohmic contact electrode of GaN-based device
WO2020214227A2 (en) 2019-04-04 2020-10-22 Hrl Laboratories, Llc Miniature field plate t-gate and method of fabricating the same
RU2746845C1 (en) * 2020-08-27 2021-04-21 Федеральное государственное автономное образовательное учреждение высшего образования «Национальный исследовательский Томский государственный университет» Method for manufacturing t-shaped galvanic gate in high-frequency field-effect transistor
CN112713185B (en) * 2020-12-21 2022-07-22 西安电子科技大学 T-shaped gate with supporting structure, preparation method thereof and semiconductor power device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929567A (en) * 1988-12-01 1990-05-29 Electronics And Telecommunications Research Institute Method of manufacturing a self-aligned GaAs MESFET with T type tungsten gate
US20070164321A1 (en) * 2006-01-17 2007-07-19 Cree, Inc. Methods of fabricating transistors including supported gate electrodes and related devices

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34861A (en) 1862-04-01 Improved washing-machine
JPS6021574A (en) * 1983-07-15 1985-02-02 Fujitsu Ltd Manufacture of semiconductor device
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0218942A (en) * 1988-07-07 1990-01-23 Sumitomo Electric Ind Ltd Electric field effect transistor and its manufacture
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5292501A (en) * 1990-06-25 1994-03-08 Degenhardt Charles R Use of a carboxy-substituted polymer to inhibit plaque formation without tooth staining
US5200022A (en) * 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3023933B2 (en) * 1991-06-28 2000-03-21 株式会社村田製作所 Method for manufacturing semiconductor device
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
TW327241B (en) * 1997-07-24 1998-02-21 United Semiconductor Corp The method for lowing down gate boundary capacitor
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP3501284B2 (en) * 2001-03-30 2004-03-02 富士通カンタムデバイス株式会社 Method for manufacturing semiconductor device
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US7230284B2 (en) * 2001-07-24 2007-06-12 Cree, Inc. Insulating gate AlGaN/GaN HEMT
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US6982204B2 (en) * 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US7045404B2 (en) 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7419892B2 (en) * 2005-12-13 2008-09-02 Cree, Inc. Semiconductor devices including implanted regions and protective layers and methods of forming the same
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US8307196B2 (en) 2006-04-05 2012-11-06 Freescale Semiconductor, Inc. Data processing system having bit exact instructions and methods therefor
US9040398B2 (en) * 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929567A (en) * 1988-12-01 1990-05-29 Electronics And Telecommunications Research Institute Method of manufacturing a self-aligned GaAs MESFET with T type tungsten gate
US20070164321A1 (en) * 2006-01-17 2007-07-19 Cree, Inc. Methods of fabricating transistors including supported gate electrodes and related devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
K. YAMASAKI, K. ASAI, K. KURUMADA: "N+ Self-aligned MESFET for GaAs LSIs", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 22, 1 January 1983 (1983-01-01) - 31 December 1983 (1983-12-31), Tokyo, JP, pages 381 - 384, XP001491212 *
KAMECHE M ET AL: "High-Temperature Distortion and Power-Handling Properties of GaAs-, 4H-SiC-, GaN- MESFET's Switches", ELECTROTECHNICAL CONFERENCE, 2006. MELECON 2006. IEEE MEDITERRANEAN BENALMADENA, SPAIN 16-19 MAY 2006, PISCATAWAY, NJ, USA,IEEE LNKD- DOI:10.1109/MELCON.2006.1653063, 16 May 2006 (2006-05-16), pages 169 - 172, XP010927716, ISBN: 978-1-4244-0087-4 *

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