WO2011050336A3 - Semiconductor devices having an enhanced absorption region and associated methods - Google Patents

Semiconductor devices having an enhanced absorption region and associated methods Download PDF

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Publication number
WO2011050336A3
WO2011050336A3 PCT/US2010/053867 US2010053867W WO2011050336A3 WO 2011050336 A3 WO2011050336 A3 WO 2011050336A3 US 2010053867 W US2010053867 W US 2010053867W WO 2011050336 A3 WO2011050336 A3 WO 2011050336A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor devices
associated methods
absorption region
electromagnetic radiation
enhanced absorption
Prior art date
Application number
PCT/US2010/053867
Other languages
French (fr)
Other versions
WO2011050336A2 (en
Inventor
James Carey
Jason Sickler
Original Assignee
Sionyx, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sionyx, Inc. filed Critical Sionyx, Inc.
Publication of WO2011050336A2 publication Critical patent/WO2011050336A2/en
Publication of WO2011050336A3 publication Critical patent/WO2011050336A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 µm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm.
PCT/US2010/053867 2009-10-22 2010-10-22 Semiconductor devices having an enhanced absorption region and associated methods WO2011050336A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25410709P 2009-10-22 2009-10-22
US61/254,107 2009-10-22

Publications (2)

Publication Number Publication Date
WO2011050336A2 WO2011050336A2 (en) 2011-04-28
WO2011050336A3 true WO2011050336A3 (en) 2011-11-03

Family

ID=43897667

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/053867 WO2011050336A2 (en) 2009-10-22 2010-10-22 Semiconductor devices having an enhanced absorption region and associated methods

Country Status (2)

Country Link
US (2) US20110095387A1 (en)
WO (1) WO2011050336A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US20120292729A1 (en) * 2011-05-17 2012-11-22 Sionyx, Inc. Optoelectronic Devices Having Deep Level Defects and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
JP2013084722A (en) * 2011-10-07 2013-05-09 Toshiba Corp Solid-state imaging device and method of solid-state imaging device
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
DE102012222426B4 (en) * 2012-12-06 2015-01-08 Robert Bosch Gmbh Manufacturing method for a micromechanical component
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods

Citations (5)

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EP0473439A2 (en) * 1990-08-31 1992-03-04 Cooper Industries, Inc. Electronic switch comprising a photosensitive semiconductor
JP2000164914A (en) * 1998-09-10 2000-06-16 Electrowatt Technol Innov Ag Photosensitive semiconductor element, photosensitive semiconductor device, photosensitive circuit, and frame control method using photosensitive semiconductor element or photosensitive semiconductor device
JP2002134640A (en) * 2000-10-11 2002-05-10 United Test Center Inc Thin photosensitive semiconductor device
WO2008145097A2 (en) * 2007-05-25 2008-12-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photosensitive semiconductor component
US20090206237A1 (en) * 2004-01-24 2009-08-20 Shannon John M Phototransistor

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US4277793A (en) * 1979-07-16 1981-07-07 Rca Corporation Photodiode having enhanced long wavelength response
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
JPH10209168A (en) * 1997-01-24 1998-08-07 Nec Corp Manufacture of semiconductor device
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US7354792B2 (en) * 2001-05-25 2008-04-08 President And Fellows Of Harvard College Manufacture of silicon-based devices having disordered sulfur-doped surface layers
US7057256B2 (en) * 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7390689B2 (en) * 2001-05-25 2008-06-24 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP4442157B2 (en) * 2003-08-20 2010-03-31 ソニー株式会社 Photoelectric conversion device and solid-state imaging device
US7456452B2 (en) * 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager
WO2008127807A1 (en) * 2007-03-09 2008-10-23 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
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JP5687837B2 (en) * 2007-02-16 2015-03-25 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ Solar cell structure, photovoltaic module and methods corresponding thereto
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US7816220B2 (en) * 2008-02-27 2010-10-19 President & Fellows Of Harvard College Laser-induced structuring of substrate surfaces

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0473439A2 (en) * 1990-08-31 1992-03-04 Cooper Industries, Inc. Electronic switch comprising a photosensitive semiconductor
JP2000164914A (en) * 1998-09-10 2000-06-16 Electrowatt Technol Innov Ag Photosensitive semiconductor element, photosensitive semiconductor device, photosensitive circuit, and frame control method using photosensitive semiconductor element or photosensitive semiconductor device
JP2002134640A (en) * 2000-10-11 2002-05-10 United Test Center Inc Thin photosensitive semiconductor device
US20090206237A1 (en) * 2004-01-24 2009-08-20 Shannon John M Phototransistor
WO2008145097A2 (en) * 2007-05-25 2008-12-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photosensitive semiconductor component

Also Published As

Publication number Publication date
US20130187250A1 (en) 2013-07-25
US20110095387A1 (en) 2011-04-28
WO2011050336A2 (en) 2011-04-28

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