WO2011094454A3 - Apparatus, system, and method for determining a read voltage threshold for solid-state storage media - Google Patents

Apparatus, system, and method for determining a read voltage threshold for solid-state storage media Download PDF

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Publication number
WO2011094454A3
WO2011094454A3 PCT/US2011/022786 US2011022786W WO2011094454A3 WO 2011094454 A3 WO2011094454 A3 WO 2011094454A3 US 2011022786 W US2011022786 W US 2011022786W WO 2011094454 A3 WO2011094454 A3 WO 2011094454A3
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WO
WIPO (PCT)
Prior art keywords
solid
storage media
data set
state storage
voltage threshold
Prior art date
Application number
PCT/US2011/022786
Other languages
French (fr)
Other versions
WO2011094454A2 (en
Inventor
John Strasser
David Flynn
Jeremy Fillingim
Robert Wood
Original Assignee
Fusion-Io, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fusion-Io, Inc. filed Critical Fusion-Io, Inc.
Publication of WO2011094454A2 publication Critical patent/WO2011094454A2/en
Publication of WO2011094454A3 publication Critical patent/WO2011094454A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check

Abstract

An apparatus, system, and method are disclosed for determining a read voltage threshold 662 for solid-state storage media 110. A data set read module 402 reads a data set from storage cells of solid-state storage media 110. The data set is originally stored in the storage cells with a known bias. A deviation module 404 determines that a read bias for the data set deviates from the known bias. A direction module 406 determines a direction of deviation for the data set. The direction of deviation is based on a difference between the read bias of the data set and the known bias. An adjustment module 408 adjusts a read voltage threshold 662 for the storage cells of the solid-state storage media 110 based on the direction of deviation.
PCT/US2011/022786 2010-01-27 2011-01-27 Apparatus, system, and method for determining a read voltage threshold for solid-state storage media WO2011094454A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US29886110P 2010-01-27 2010-01-27
US61/298,861 2010-01-27
US30520510P 2010-02-17 2010-02-17
US61/305,205 2010-02-17

Publications (2)

Publication Number Publication Date
WO2011094454A2 WO2011094454A2 (en) 2011-08-04
WO2011094454A3 true WO2011094454A3 (en) 2011-11-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/022786 WO2011094454A2 (en) 2010-01-27 2011-01-27 Apparatus, system, and method for determining a read voltage threshold for solid-state storage media

Country Status (2)

Country Link
US (1) US8315092B2 (en)
WO (1) WO2011094454A2 (en)

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