WO2011138739A3 - Cellule photovoltaïque à face arrière structurée et procédé de fabrication associé - Google Patents

Cellule photovoltaïque à face arrière structurée et procédé de fabrication associé Download PDF

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Publication number
WO2011138739A3
WO2011138739A3 PCT/IB2011/051954 IB2011051954W WO2011138739A3 WO 2011138739 A3 WO2011138739 A3 WO 2011138739A3 IB 2011051954 W IB2011051954 W IB 2011051954W WO 2011138739 A3 WO2011138739 A3 WO 2011138739A3
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic cell
back surface
associated manufacturing
structured back
wafer
Prior art date
Application number
PCT/IB2011/051954
Other languages
English (en)
Other versions
WO2011138739A2 (fr
Inventor
Philippe Thony
Nicolas Chaix
Jean-Paul Garandet
Original Assignee
Commissariat A L'energie Atomique Et Aux Energies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat A L'energie Atomique Et Aux Energies Alternatives filed Critical Commissariat A L'energie Atomique Et Aux Energies Alternatives
Priority to KR1020127031271A priority Critical patent/KR20130113926A/ko
Priority to US13/695,449 priority patent/US20130098437A1/en
Priority to EP11723678A priority patent/EP2567408A2/fr
Priority to JP2013508604A priority patent/JP5837053B2/ja
Publication of WO2011138739A2 publication Critical patent/WO2011138739A2/fr
Publication of WO2011138739A3 publication Critical patent/WO2011138739A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

L'invention concerne une cellule photovoltaïque (1) comprenant au moins une tranche (2) de matériau semi-conducteur, avec une face avant (21) destinée à recevoir la lumière incidente et une face arrière (22) opposée à ladite face avant, ainsi que des procédés de réalisation de cette cellule photovoltaïque. La face arrière (22) comprend un contact électrique (32) et une structure (4) dite structure optique, discrète et susceptible de rediriger la lumière incidente vers le cœur de la tranche.
PCT/IB2011/051954 2010-05-05 2011-05-03 Cellule photovoltaïque à face arrière structurée et procédé de fabrication associé WO2011138739A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020127031271A KR20130113926A (ko) 2010-05-05 2011-05-03 구조화된 이면을 갖춘 광전지 및 관련 제조 방법
US13/695,449 US20130098437A1 (en) 2010-05-05 2011-05-03 Photovoltaic Cell Having a Structured Back Surface and Associated Manufacturing Method
EP11723678A EP2567408A2 (fr) 2010-05-05 2011-05-03 Cellule photovoltaïque à face arrière structurée et procédé de fabrication associé
JP2013508604A JP5837053B2 (ja) 2010-05-05 2011-05-03 構造化された裏面を有する太陽電池およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1001939A FR2959872B1 (fr) 2010-05-05 2010-05-05 Cellule photovoltaique a face arriere structuree et procede de fabrication associe.
FR1001939 2010-05-05

Publications (2)

Publication Number Publication Date
WO2011138739A2 WO2011138739A2 (fr) 2011-11-10
WO2011138739A3 true WO2011138739A3 (fr) 2013-01-03

Family

ID=43571700

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2011/051954 WO2011138739A2 (fr) 2010-05-05 2011-05-03 Cellule photovoltaïque à face arrière structurée et procédé de fabrication associé

Country Status (6)

Country Link
US (1) US20130098437A1 (fr)
EP (1) EP2567408A2 (fr)
JP (1) JP5837053B2 (fr)
KR (1) KR20130113926A (fr)
FR (1) FR2959872B1 (fr)
WO (1) WO2011138739A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004535A (ja) * 2011-06-10 2013-01-07 Jx Nippon Oil & Energy Corp 光電変換素子
CN103597603A (zh) * 2011-06-10 2014-02-19 吉坤日矿日石能源株式会社 光电转换元件
JP2013004805A (ja) * 2011-06-17 2013-01-07 Jx Nippon Oil & Energy Corp 光電変換素子
US10840400B2 (en) * 2013-08-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device with back reflector
US10371898B2 (en) * 2013-09-05 2019-08-06 Southern Methodist University Enhanced coupling strength grating having a cover layer
JP6125042B2 (ja) * 2013-12-04 2017-05-10 三菱電機株式会社 太陽電池セルの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
JPS6167967A (ja) * 1984-09-11 1986-04-08 Sharp Corp 太陽電池ｂｓｒ電極構造
WO1992014270A1 (fr) * 1991-02-04 1992-08-20 Gesellschaft Zur Förderung Der Industrieorientierten Forschung An Den Schweizerischen Hochschulen Und Weiteren Institutionen Eth - Zentrum (Ifw) Cellule solaire
US20090183774A1 (en) * 2007-07-13 2009-07-23 Translucent, Inc. Thin Film Semiconductor-on-Sapphire Solar Cell Devices

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Publication number Priority date Publication date Assignee Title
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
JP2000294818A (ja) * 1999-04-05 2000-10-20 Sony Corp 薄膜半導体素子およびその製造方法
JP2001127313A (ja) * 1999-10-25 2001-05-11 Sony Corp 薄膜半導体素子およびその製造方法
WO2008045311A2 (fr) * 2006-10-06 2008-04-17 Qualcomm Mems Technologies, Inc. Dispositif d'éclairage intégrant un coupleur de lumière
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
CN102138100B (zh) * 2008-07-28 2014-06-11 康宁股份有限公司 将液体密封于玻璃封装中的方法及所得到的玻璃封装

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
JPS6167967A (ja) * 1984-09-11 1986-04-08 Sharp Corp 太陽電池ｂｓｒ電極構造
WO1992014270A1 (fr) * 1991-02-04 1992-08-20 Gesellschaft Zur Förderung Der Industrieorientierten Forschung An Den Schweizerischen Hochschulen Und Weiteren Institutionen Eth - Zentrum (Ifw) Cellule solaire
US20090183774A1 (en) * 2007-07-13 2009-07-23 Translucent, Inc. Thin Film Semiconductor-on-Sapphire Solar Cell Devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ZENG L ET AL: "Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 93, no. 22, 1 December 2008 (2008-12-01), pages 221105 - 221105, XP012112654, ISSN: 0003-6951, DOI: 10.1063/1.3039787 *
ZENG L ET AL: "Efficiency enhancement in Si solar cells by textured photonic crystal back reflector", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 89, no. 11, 13 September 2006 (2006-09-13), pages 111111 - 111111, XP012085654, ISSN: 0003-6951, DOI: DOI:10.1063/1.2349845 *

Also Published As

Publication number Publication date
JP2013526077A (ja) 2013-06-20
JP5837053B2 (ja) 2015-12-24
FR2959872B1 (fr) 2013-03-15
FR2959872A1 (fr) 2011-11-11
EP2567408A2 (fr) 2013-03-13
KR20130113926A (ko) 2013-10-16
US20130098437A1 (en) 2013-04-25
WO2011138739A2 (fr) 2011-11-10

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