WO2012088319A3 - Semiconductor devices having reduced substrate damage and associated methods - Google Patents

Semiconductor devices having reduced substrate damage and associated methods Download PDF

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Publication number
WO2012088319A3
WO2012088319A3 PCT/US2011/066602 US2011066602W WO2012088319A3 WO 2012088319 A3 WO2012088319 A3 WO 2012088319A3 US 2011066602 W US2011066602 W US 2011066602W WO 2012088319 A3 WO2012088319 A3 WO 2012088319A3
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WO
WIPO (PCT)
Prior art keywords
region
associated methods
semiconductor devices
substrate damage
semiconductor material
Prior art date
Application number
PCT/US2011/066602
Other languages
French (fr)
Other versions
WO2012088319A2 (en
Inventor
Christopher Vineis
James Carey
Xia Li
Original Assignee
Sionyx, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sionyx, Inc. filed Critical Sionyx, Inc.
Priority to JP2013546385A priority Critical patent/JP2014500633A/en
Priority to CN201180068028.3A priority patent/CN103392236B/en
Priority to KR1020137019402A priority patent/KR20140014121A/en
Priority to KR1020187013676A priority patent/KR102024495B1/en
Publication of WO2012088319A2 publication Critical patent/WO2012088319A2/en
Publication of WO2012088319A3 publication Critical patent/WO2012088319A3/en

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    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.
PCT/US2011/066602 2010-12-21 2011-12-21 Semiconductor devices having reduced substrate damage and associated methods WO2012088319A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013546385A JP2014500633A (en) 2010-12-21 2011-12-21 Semiconductor device with low substrate damage and related method
CN201180068028.3A CN103392236B (en) 2010-12-21 2011-12-21 There is semiconductor device and the correlation technique of the substrate damage of minimizing
KR1020137019402A KR20140014121A (en) 2010-12-21 2011-12-21 Semiconductor devices having reduced substrate damage and associated methods
KR1020187013676A KR102024495B1 (en) 2010-12-21 2011-12-21 Semiconductor devices having reduced substrate damage and associated methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201061425634P 2010-12-21 2010-12-21
US61/425,634 2010-12-21

Publications (2)

Publication Number Publication Date
WO2012088319A2 WO2012088319A2 (en) 2012-06-28
WO2012088319A3 true WO2012088319A3 (en) 2013-01-17

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PCT/US2011/066602 WO2012088319A2 (en) 2010-12-21 2011-12-21 Semiconductor devices having reduced substrate damage and associated methods

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US (1) US8698272B2 (en)
JP (1) JP2014500633A (en)
KR (2) KR20140014121A (en)
CN (2) CN103392236B (en)
WO (1) WO2012088319A2 (en)

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US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
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