WO2012115541A2 - Light-emitting semiconductor device - Google Patents

Light-emitting semiconductor device Download PDF

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Publication number
WO2012115541A2
WO2012115541A2 PCT/RU2012/000147 RU2012000147W WO2012115541A2 WO 2012115541 A2 WO2012115541 A2 WO 2012115541A2 RU 2012000147 W RU2012000147 W RU 2012000147W WO 2012115541 A2 WO2012115541 A2 WO 2012115541A2
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WO
WIPO (PCT)
Prior art keywords
light
layer
semiconductor device
emitting semiconductor
substrate
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PCT/RU2012/000147
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French (fr)
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WO2012115541A3 (en
Inventor
Yury Georgievich Shreter
Yury Toomasovich Rebane
Aleksey Vladimirovich Mironov
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Yury Georgievich Shreter
Yury Toomasovich Rebane
Aleksey Vladimirovich Mironov
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Application filed by Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov filed Critical Yury Georgievich Shreter
Publication of WO2012115541A2 publication Critical patent/WO2012115541A2/en
Publication of WO2012115541A3 publication Critical patent/WO2012115541A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the invention relates to light-emitting devices; in particular, to high effective light-emitting semiconductor diodes .
  • Semiconductor light-diode chip is a main component of the solid body illumination technology. Voltage applied between two contacts of the light-diode chips induces electric current to flow through p-n junction, and a light- diode chip emits light owing to emissive recombination of electrons and holes.
  • the advantages of light-diode chips are a long service life, high reliability, high coefficient of electric energy- to-luminous radiation transformation and small consumption of electrical energy.
  • Light-diode chips emitting infra-red, red and green light are made and sold for a long time, whereas technology for manufacturing light-diode chips made on the base of nitrides of the third group ( II I-nitrides ) emitting ultraviolet, blue, green and white light has been essentially improved over the last years (US 7,642,108; US 7,335,920; US 7,365,369; US 7,531,841; US 6,614,060). Owing to this light- diode chips have got widespread and are used in various fields including illumination. Usually, light-diode chips are made according to planar technology for crystal growth from gas phase and have flat upper and lower surfaces through which light goes out.
  • the laminated light-diode structure including an active layer with quantum wells is grown on the flat areas of the light-diode chips and extends also into the inverted surface pyramids formed by V- shaped surface pits. After growing an active layer, the inverted surface pyramids are overgrown and a flat surface of the chip is formed. This approach allows increasing an area of the active layer falling at the unit of the chip area, thus increasing internal quantum output of the light-diode chip; however, in this case efficiency of light extraction does not increase.
  • the task of this invention is an increasing the effectiveness of the light-emitting semiconductor device with simultaneous suppression of the negative effects connected with the vertexes of the inverted surface pyramids .
  • the invention proposes a light- emitting semiconductor device comprising:
  • the substrate comprises at least one through hole made in the form of the truncated inverted pyramid, wherein the first, second, active and conductive layers are applied both on horizontal areas of the substrate and on the internal faces of the holes.
  • the number of faces of said pyramids is from 3 to 24, length of the side of the pyramid base is from 10 ⁇ to 1 mm. Slope of the side faces of said pyramids relative to the substrate surface is from 10° to 90°, height of the pyramid cut-off part constitutes from 5% to 50% of its full height, and thickness of the substrate is from 10 ⁇ to 1 mm.
  • through holes are arranged in the form of two-dimensional lattice.
  • the substrate can be made from gallium nitride, or from silicon carbide, or from aluminum oxide.
  • the conductive layer is transparent or semi-transparent.
  • the conductive layer can be made from indium oxide with tin (ITO) or from metal from 50 to 400 Angstrom thick.
  • the first layer from the n-type semiconductor can be made from gallium nitride doped with silicon.
  • the second layer from the p-type semiconductor can be made from gallium nitride doped with magnesium.
  • the active layer can be made from gallium nitride (GaN) and a solid solution of boron-aluminum-gallium-indium nitride ( B K Al y Ga z I ni- z N ) .
  • the active layer can be made composite and consists of the layers from semiconductor with blende phase structure and from the barriers with zinc sulfide phase structure .
  • the active layer can comprise multiple quantum wells made from a solid solution of boron-aluminum-gallium-indium nitride (B x Al y Ga z Ini-. z N) .
  • the active layer comprises one wide well and multiple quantum wells made from a solid solution of boron-aluminum-gallium-indium nitride (B x Al y Ga z In X - z N) .
  • the light-emitting device can additionally comprise phosphor layer applied on the upper surface of the chip for conversion a sky-blue light into a white one.
  • the light-emitting device can additionally comprise an optical light diffuser arranged on the upper surface of the chip for receiving white light from a mixture of light fluxes of different colors emitted from the pyramid faces and flat areas outside the pyramid.
  • the second contact applied on the conductive layer is made not solid with possibility of partial transmitting a light.
  • the present invention proposes light-diode chips with a set of through holes in the form of truncated inverted pyramids, on the side faces of which a laminated light-diode structure is formed. In these chips there is no the apex collecting dislocations, polluting impurities and other defects .
  • the base of the proposed light-emitting semiconductor device is a conductive semiconductor substrate comprising through holes made in the form of truncated inverted pyramids, going out on the upper and lower surfaces of the light-diode chip.
  • the present invention differs from the existing analogs in that a light-diode chip is not a solid but comprises through holes which are made in the form of truncated inverted pyramids.
  • Using of the truncated pyramids allows avoiding a contact of the active layer with the area close to the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion an electrical energy to light.
  • using of the inverted truncated pyramids is as so effective as using of the convex truncated pyramids, and the light extraction coefficient in the light-diode chips with the inverted truncated pyramids essentially exceeds the respective coefficient for light-diode chips with the inverted full pyramids .
  • nonsolid light-diode chip with through holes allows essentially improving its cooling by bleeding air, inertial gas or a liquid through these holes.
  • a light-diode chip can operate at large current densities, deliver the higher light energy and have the greater luminous brightness.
  • Fig.l shows the diagram of the conductive substrate of the light-diode chip with a set of through holes made in the form of truncated inverted pyramids.
  • Fig.2 shows the diagram of the truncated inverted pyramid with a laminated light-diode structure formed on its side faces.
  • Fig.3 shows the sectional diagram of the light-diode chip in the area of one of the truncated inverted pyramids from the example 1 which generates a sky-blue light.
  • Fig.4 shows the sectional diagram of the light-diode chip in the area of one of the truncated inverted pyramids from the example 2 which generates a white light by means of a phosphor.
  • Fig.5 shows the sectional diagram of the light-diode chip in the area of one of the truncated inverted pyramids from the example 3 which generates white light without using of a phosphor.
  • the base of the proposed light-emitting semiconductor device is a conductive semiconductor substrate 100 comprising through holes 101 made in the form of truncated inverted pyramids, Fig.l.
  • the light-diode structure 200 is formed as shown in Fig.2.
  • the light-diode structure 200 consists of the first layer 201 of the n-type semiconductor, the second layer 203 of the p- ⁇ type semiconductor, the active layer 202 arranged between the first and second layers and transparent conductive layer 204 applied on the second layer 203 of the p-type semiconductor.
  • the conductive substrate 100 comprises at least one through hole made in the form of truncated inverted pyramid, wherein the first layer 201, the second layer 203, the active layer 202 and the conductive layer 204 are applied both on horizontal areas of the substrate and on the internal faces of the through holes 101 made in the form of truncated inverted pyramids, as shown in the sectional diagram of the light-diode chip 300 in the area of one of the truncated inverted pyramids, Fig.3.
  • Two metallic contacts 302 and 303 which provide current supply to the light-diode structure are applied from below on the substrate 100 and from above on the horizontal area of the transparent conductive layer 204, see Fig. 3.
  • Example 1 Light-diode chip with eleven holes in the form of inverted truncated hexagonal pyramids generating sky- blue light.
  • the general diagram of the conductive substrate 100 of the light-diode chip generating sky-blue light is given in Fig.l.
  • the substrate of the light-diode chip consists of the rectangular plate from semiconductor gallium nitride crystal 3x2 mm 200 ⁇ thick, the surface is perpendicular to the crystal axis C [0 0 0 1] .
  • Laminated structure of the light-diode chip consists of the conductive substrate 100 from p-type gallium nitride 100 ⁇ thick on which underneath the metallic contact 302 is applied, layer 201 from a high quality p-type gallium nitride 2 ⁇ thick, non-doped active GaN layer 202 0.1 ⁇ thick with five quantum wells In 0 .2Ga 0 .
  • using of the truncated pyramids allows avoiding a contact of the active layer with the area close by the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion electrical energy to light.
  • Example 2 Light-diode chip with eight holes in the form of inverted truncated hexagonal pyramids generating white light with using of phosphor.
  • the general diagram of the substrate 100 of the light- diode chip generating white light is given in Fig.l.
  • the substrate of the light-diode chip consists of the rectangular plate from semiconductor gallium nitride crystal lxl mm 200 ⁇ thick, and with the surface perpendicular to the crystal axis C [0 0 0 1] .
  • Inverted truncated hexagonal pyramids are packed in the triangular two-dimensional lattice with period of 300 ⁇ .
  • Laminated structure of the light-diode chip consists of the conductive substrate 100 from n-type gallium nitride 100 ⁇ thick on which underneath the metallic contact 302 is applied, layer 201 from a high quality n-type gallium nitride 2 ⁇ thick, non-doped GaN layer 202 0.1 ⁇ thick with one wide well Ino.1Gao.9N 20 nm wide, and with three quantum wells In0.2Ga0.sN 2 nm wide, p-type GaN layer 203 0.1 ⁇ thick, conductive layer 204 from indium oxide with tin (ITO) 1 ⁇ thick on top of which the metallic contact 303 is applied on which the phosphor layer 401 lies .
  • ITO indium oxide with tin
  • Wiring of the light-diode chip 300 in the light diode or light-diode lamp is carried out onto the mirror reflective surface for example, polished aluminum or copper plate.
  • the holes from the conductive indium oxide with tin (ITO) layer 204 forming the transparent ohmic contact flows into p-type GaN layer 203, enter the active layer 202 of non-doped GaN and are caught by three quantum wells Ino.2Gao.8N 2 nm wide where they are recombine with electrons emitting a sky-blue light.
  • Sky-blue light emitted by the light-diode chip 300 enters the phosphor layer 401 either at once or after some reflections from the lower mirror surface and side faces of the inverted truncated pyramid.
  • a sky-blue light excites the phosphor and is converted into a white light.
  • the light extraction coefficient from the light-diode chip 300 exceeds essentially the same for an usual flat chip.
  • truncated pyramids allows avoiding a contact of the active layer with the area close by the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion an electrical energy to light.
  • Example 3 Light-diode chip with eight holes in the form of inverted truncated hexagonal pyramids generating white light without using of phosphor.
  • the general diagram of the light-diode chip substrate 100 generating white light is given in Fig.l.
  • the substrate of the light-diode chip consists of the rectangular plate from semiconductor gallium nitride crystal 2x2 mm 100 ⁇ thick, and with the surface perpendicular to the crystal axis C [0 0 0 1] .
  • Inverted truncated hexagonal pyramids are packed in the triangular two-dimensional lattice with period of 500 ⁇ .
  • Sectional diagram of the light-diode chip 300 in the area of one of the inverted truncated pyramids is shown in Fig. 5.
  • Laminated structure of the light-diode chip consists of the conductive substrate 100 from n-type gallium nitride 100 ⁇ thick on which underneath the metallic contact 302 is applied, layer 201 from a high quality n-type gallium nitride 2 ⁇ thick, non-doped GaN layer 202 0.1 ⁇ thick with one wide well Ino.1Gao.9 20 nm wide, and with three quantum wells Ino.15Gao.85N with variable width being 2 nm on the faces of inverted truncated hexagonal pyramids coinciding with crystal planes (1 1 -2 2) and 4 nm out the pyramids on the horizontal crystal plane (0 0 0 1), p-type GaN layer 203 0.1 ⁇ thick, indium oxide with tin (ITO) layer 204 1 ⁇ thick on top of which the metallic net contact 501 is applied electrically connected with the strengthened metallic contact 303 on which the optical light diffuser 502 is placed.
  • ITO indium oxide with
  • Wiring of the light-diode chip 300 in the light diode or light-diode lamp is carried out onto the mirror reflective surface, for example, polished aluminum or copper plate.
  • the holes from the conductive indium oxide with tin (ITO) layer 204 forming the transparent ohmic contact flows into p-type gallium nitride layer 203 , enter the active layer 202 of non-doped GaN and are caught by three quantum wells Ino.2Gao.8N with a variable width where they recombine with electrons emitting sky-blue and yellow light.
  • Sky-blue and yellow light emitted by the light-diode chip 300 enters the optical light diffuser 502 either at once or after some reflections from the lower mirror surface and side faces of the inverted truncated pyramid. In the optical light diffuser 502 sky-blue and yellow lights are mixed converted into a white light.
  • the light extraction coefficient from the light-diode chip 300 exceeds essentially the same for an usual flat chip.
  • truncated pyramids allows avoiding a contact of the active layer with the area close by the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion an electrical energy to light.

Abstract

The present invention proposes a light-emitting semiconductor device comprising: a substrate, a first layer from n-type semiconductor formed on the substrate, a second layer from p-type semiconductor; an active layer arranged between the first and second layers; a conductive layer, arranged on the second layer, a first contact applied on the substrate, a second contact applied on the conductive layer, wherein the substrate comprises at least one through hole made in the form of truncated inverted pyramid, wherein the first, second, active and conductive layers are applied both on the horizontal areas of the substrate, and on the internal faces of the holes. Using of the truncated pyramids allows avoiding a contact of the active layer with the area close by the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion an electrical energy to light. At the same time, as for the light extraction, using of the inverted truncated pyramids is as so effective as using of the convex truncated pyramids, and the light extraction coefficient in the light-diode chips with the inverted truncated pyramids essentially exceeds the respective coefficient for light-diode chips with the inverted full pyramids.

Description

DESCRIPTION
LIGHT-EMITTING SEMICONDUCTOR DEVICE
Technical Field
The invention relates to light-emitting devices; in particular, to high effective light-emitting semiconductor diodes .
Background Art
Semiconductor light-diode chip is a main component of the solid body illumination technology. Voltage applied between two contacts of the light-diode chips induces electric current to flow through p-n junction, and a light- diode chip emits light owing to emissive recombination of electrons and holes.
The advantages of light-diode chips are a long service life, high reliability, high coefficient of electric energy- to-luminous radiation transformation and small consumption of electrical energy.
Light-diode chips emitting infra-red, red and green light are made and sold for a long time, whereas technology for manufacturing light-diode chips made on the base of nitrides of the third group ( II I-nitrides ) emitting ultraviolet, blue, green and white light has been essentially improved over the last years (US 7,642,108; US 7,335,920; US 7,365,369; US 7,531,841; US 6,614,060). Owing to this light- diode chips have got widespread and are used in various fields including illumination. Usually, light-diode chips are made according to planar technology for crystal growth from gas phase and have flat upper and lower surfaces through which light goes out.
Flat surfaces of the light-diode chip result in that a light emitted under an angle exceeding an angle of full internal reflection can not go out and is absorbed in the light-diode chip which reduces its efficiency.
To overcome this disadvantage, in US 5,087, 949 it was proposed to use light-diode chips in the form of convex truncated pyramid comprising inclined planes through which light can leave light-diode chip without undergoing full internal reflection.
However, using of light-diode chips having the shape of one convex truncated pyramid requires essentially lar'ger consumption of semiconductor material in comparison to usual thin-film flat chip, as well will entail the necessity of expensive cutting V-grooves.
To overcome these problems, in US 7,446,345 and US 7,611,917 it was proposed to use light-diode chips comprising multiple V-shaped surface defects (pits) having the shape of inverted pyramid.
In light-diode chips with multiple pits the laminated light-diode structure including an active layer with quantum wells is grown on the flat areas of the light-diode chips and extends also into the inverted surface pyramids formed by V- shaped surface pits. After growing an active layer, the inverted surface pyramids are overgrown and a flat surface of the chip is formed. This approach allows increasing an area of the active layer falling at the unit of the chip area, thus increasing internal quantum output of the light-diode chip; however, in this case efficiency of light extraction does not increase.
One can succeed in getting an increase of the light extraction with simultaneous increase of the quantum output using the light-diode chips with not overgrown inverted surface pyramids formed by V-shaped surface pits as it was proposed in the articles T. Wunderer, M. Feneberg, F.Lipskil, J. Wang, R. A. R. Leutel, S. Schwaiger, K. Thonke, A. Chuvillin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, . Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, A.D. Drager, A. Hangleiter, and F. Scholz, Phys. Status Solidi B, 1-12 (2010) and T. Wunderer, J. Wang, F.Lipskil, S. Schwaiger, A. Chuvillin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, S. S. Shirokov, A.E. Yunovich and F. Scholz, Phys. Status Solidi C7, 2140-2143 (2010) .
However, using of the full inverted pyramids as was proposed above, has an essential disadvantage connected with the fact that the inverted surface pyramids serve as a drain for dislocations, polluting impurities and other defects. As a result, positive effect from increasing of the active layer area falling at the unit of the chip area is compensated by reducing of the internal quantum output owing to accumulation of the defects close by the vertexes of the inverted surface pyramids. Besides, increasing of the light extraction coefficient owing to the inclined planes in the inverted pyramids is limited by the fact that light is strongly absorbed close by the vertexes of the pyramids where the inclined planes are coupled.
The task of this invention is an increasing the effectiveness of the light-emitting semiconductor device with simultaneous suppression of the negative effects connected with the vertexes of the inverted surface pyramids .
Disclosure of Invention
To solve this task, the invention proposes a light- emitting semiconductor device comprising:
- a substrate;
- a first layer made from n-type semiconductor formed on. the substrate;
- a second layer made from p-type semiconductor;
- an active layer arranged between the first and the second layers;
- a conductive layer placed on the second layer;
- a first contact applied on the substrate;
- a second contact applied on the conductive layer, wherein the substrate comprises at least one through hole made in the form of the truncated inverted pyramid, wherein the first, second, active and conductive layers are applied both on horizontal areas of the substrate and on the internal faces of the holes.
Preferably, the number of faces of said pyramids is from 3 to 24, length of the side of the pyramid base is from 10 μ to 1 mm. Slope of the side faces of said pyramids relative to the substrate surface is from 10° to 90°, height of the pyramid cut-off part constitutes from 5% to 50% of its full height, and thickness of the substrate is from 10 μ to 1 mm.
Preferably, through holes are arranged in the form of two-dimensional lattice.
The substrate can be made from gallium nitride, or from silicon carbide, or from aluminum oxide.
In the preferred embodiment, the conductive layer is transparent or semi-transparent. Preferably, the conductive layer can be made from indium oxide with tin (ITO) or from metal from 50 to 400 Angstrom thick.
The first layer from the n-type semiconductor can be made from gallium nitride doped with silicon.
The second layer from the p-type semiconductor can be made from gallium nitride doped with magnesium.
The active layer can be made from gallium nitride (GaN) and a solid solution of boron-aluminum-gallium-indium nitride ( BKAlyGaz I ni-zN ) .
Preferably, the active layer can be made composite and consists of the layers from semiconductor with blende phase structure and from the barriers with zinc sulfide phase structure .
In the preferred embodiment, the active layer can comprise multiple quantum wells made from a solid solution of boron-aluminum-gallium-indium nitride (BxAlyGazIni-.zN) .
In another preferred embodiment, the active layer comprises one wide well and multiple quantum wells made from a solid solution of boron-aluminum-gallium-indium nitride (BxAlyGazInX-zN) .
The light-emitting device can additionally comprise phosphor layer applied on the upper surface of the chip for conversion a sky-blue light into a white one.
The light-emitting device can additionally comprise an optical light diffuser arranged on the upper surface of the chip for receiving white light from a mixture of light fluxes of different colors emitted from the pyramid faces and flat areas outside the pyramid.
Preferably, the second contact applied on the conductive layer is made not solid with possibility of partial transmitting a light.
The present invention proposes light-diode chips with a set of through holes in the form of truncated inverted pyramids, on the side faces of which a laminated light-diode structure is formed. In these chips there is no the apex collecting dislocations, polluting impurities and other defects . The base of the proposed light-emitting semiconductor device is a conductive semiconductor substrate comprising through holes made in the form of truncated inverted pyramids, going out on the upper and lower surfaces of the light-diode chip.
In the truncated inverted pyramids there is no apex in which the inclined faces are jointed and the dislocations, polluting impurities and other defects are collected. The inclined faces are jointed with the holes on the lower surface of the flat chip. The holes provide a free output of light from the light-diode chip outside without high absorption in the apexes of the pyramids.
The present invention differs from the existing analogs in that a light-diode chip is not a solid but comprises through holes which are made in the form of truncated inverted pyramids.
Using of the truncated pyramids allows avoiding a contact of the active layer with the area close to the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion an electrical energy to light. At the same time, in relation to light extraction, using of the inverted truncated pyramids is as so effective as using of the convex truncated pyramids, and the light extraction coefficient in the light-diode chips with the inverted truncated pyramids essentially exceeds the respective coefficient for light-diode chips with the inverted full pyramids .
Besides, using of the nonsolid light-diode chip with through holes allows essentially improving its cooling by bleeding air, inertial gas or a liquid through these holes. As a result, a light-diode chip can operate at large current densities, deliver the higher light energy and have the greater luminous brightness.
Brief Description of the Drawings
The present invention is illustrated by the drawings shown in Fig. 1-5.
Fig.l shows the diagram of the conductive substrate of the light-diode chip with a set of through holes made in the form of truncated inverted pyramids.
Fig.2 shows the diagram of the truncated inverted pyramid with a laminated light-diode structure formed on its side faces.
Fig.3 shows the sectional diagram of the light-diode chip in the area of one of the truncated inverted pyramids from the example 1 which generates a sky-blue light.
Fig.4 shows the sectional diagram of the light-diode chip in the area of one of the truncated inverted pyramids from the example 2 which generates a white light by means of a phosphor. Fig.5 shows the sectional diagram of the light-diode chip in the area of one of the truncated inverted pyramids from the example 3 which generates white light without using of a phosphor.
Best Mode for Carrying Out the Invention
The base of the proposed light-emitting semiconductor device is a conductive semiconductor substrate 100 comprising through holes 101 made in the form of truncated inverted pyramids, Fig.l.
At the faces 104 of the truncated inverted pyramids 101 the light-diode structure 200 is formed as shown in Fig.2. The light-diode structure 200 consists of the first layer 201 of the n-type semiconductor, the second layer 203 of the p-^ type semiconductor, the active layer 202 arranged between the first and second layers and transparent conductive layer 204 applied on the second layer 203 of the p-type semiconductor.
The conductive substrate 100 comprises at least one through hole made in the form of truncated inverted pyramid, wherein the first layer 201, the second layer 203, the active layer 202 and the conductive layer 204 are applied both on horizontal areas of the substrate and on the internal faces of the through holes 101 made in the form of truncated inverted pyramids, as shown in the sectional diagram of the light-diode chip 300 in the area of one of the truncated inverted pyramids, Fig.3. Two metallic contacts 302 and 303 which provide current supply to the light-diode structure are applied from below on the substrate 100 and from above on the horizontal area of the transparent conductive layer 204, see Fig. 3.
This invention will become clear in terms of several embodiments given below. It should be noted, that the subsequent description of these embodiments is an illustrative one only and is not an exhaustive one.
Example 1. Light-diode chip with eleven holes in the form of inverted truncated hexagonal pyramids generating sky- blue light.
The general diagram of the conductive substrate 100 of the light-diode chip generating sky-blue light is given in Fig.l. The substrate of the light-diode chip consists of the rectangular plate from semiconductor gallium nitride crystal 3x2 mm 200 μ thick, the surface is perpendicular to the crystal axis C [0 0 0 1] . At the plate eleven holes are made in the form of inverted truncated hexagonal pyramids with faces coinciding with crystal plates {1 -1 0 1}, and with the slope of the side faces relative to the plane (0 0 0 1) Θ = 61.96°, with the base sides oriented along crystal directions <1 1 -2 0> and with the length of the base sides Rb = 200 μ. Inverted truncated hexagonal pyramids are packed in the triangular two-dimensional lattice with period of 500 μ.
Sectional diagram of the light-diode chip 300 in the area of one of the inverted truncated pyramids is shown in Fig. 3. Laminated structure of the light-diode chip consists of the conductive substrate 100 from p-type gallium nitride 100 μ thick on which underneath the metallic contact 302 is applied, layer 201 from a high quality p-type gallium nitride 2 μ thick, non-doped active GaN layer 202 0.1 μ thick with five quantum wells In0.2Ga0.8 2 nm wide, p-type GaN layer 203 0,1 μ thick with Alo.4Gao.6N barrier 5 nm wide at the boundary with the active layer 202, conductive layer 204 from indium oxide with tin (ITO) 1 μ thick on top of which the metallic contact 303 is applied.
When applying constant voltage between the contacts 302 and 303, current flows in the light-diode chip 300, wherein electrons from the contact 302 flows at first into the conductive n-type gallium nitride substrate 100, then into a high quality n-type gallium nitride layer 201 and then enter the non-doped active GaN layer 202 with five quantum wells Ino.2Gao.8N 2 nm wide where recombine with holes emitting a sky-blue light. In their turn, the holes from the conductive indium oxide with tin (ITO) layer 204 forming the transparent ohmic contact flows into the p-type gallium nitride layer 203, overcome Al0.4Ga0.6N barrier preventing leakage of the electrons into the p-type gallium nitride layer 203, and also enter the non-doped active GaN layer 202 with five quantum wells Ino.2Gao.8N 2 nm wide where recombine with holes emitting a sky-blue light. Because of the inclined planes with a large slope Θ = 61.96° in the inverted pyramids, the light extraction coefficient from the light-diode chip 300 exceeds essentially the same for an usual flat chip.
Besides, in five quantum wells In0.2Ga0.g 2 ran wide formed in the non-doped GaN layer 202, on the side faces of the pyramid formed by the crystal planes {1 -1 0 1}, because of turn of these planes relative to the polar plane (0 0 0 1), the built-in electric field connected with spontaneous and piezoelectric polarization is strongly suppressed, which assists in increasing internal quantum output of light from the active layer 202.
Also, using of the truncated pyramids allows avoiding a contact of the active layer with the area close by the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion electrical energy to light.
Example 2. Light-diode chip with eight holes in the form of inverted truncated hexagonal pyramids generating white light with using of phosphor.
The general diagram of the substrate 100 of the light- diode chip generating white light is given in Fig.l. The substrate of the light-diode chip consists of the rectangular plate from semiconductor gallium nitride crystal lxl mm 200 μ thick, and with the surface perpendicular to the crystal axis C [0 0 0 1] . At the plate eight holes are made in the form of inverted truncated hexagonal pyramids with faces coinciding with crystal plates {3 3 -6 2}, and with the slope of the side faces relative to the plane (0 0 0 1) Θ = 78.42°, with the base sides oriented along crystal directions <1 -1 0 0> and with the length of the base sides Rb = 100 μ. Inverted truncated hexagonal pyramids are packed in the triangular two-dimensional lattice with period of 300 μ.
Sectional diagram of the light-diode chip 300 in the area of one of the inverted truncated pyramids is shown in Fig. 4. Laminated structure of the light-diode chip consists of the conductive substrate 100 from n-type gallium nitride 100 μ thick on which underneath the metallic contact 302 is applied, layer 201 from a high quality n-type gallium nitride 2 μ thick, non-doped GaN layer 202 0.1 μ thick with one wide well Ino.1Gao.9N 20 nm wide, and with three quantum wells In0.2Ga0.sN 2 nm wide, p-type GaN layer 203 0.1 μ thick, conductive layer 204 from indium oxide with tin (ITO) 1 μ thick on top of which the metallic contact 303 is applied on which the phosphor layer 401 lies .
Wiring of the light-diode chip 300 in the light diode or light-diode lamp is carried out onto the mirror reflective surface for example, polished aluminum or copper plate.
When applying constant voltage between the contacts 302 and 303, current flows in the light-diode chip 300, wherein electrons from the contact 302 flows at first into the conductive n-type gallium nitride substrate 100, then into a - high quality -n-type gallium nitride layer 201 and then enter the active layer 202 of non-doped GaN, where at first they are caught into a wide well Ino. 1Gao.9N 20 nm wide, and then tunnel into three quantum wells I n0 .2Ga0.sN 2 nm wide where they are recombine with holes emitting a sky-blue light. In their turn, the holes from the conductive indium oxide with tin (ITO) layer 204 forming the transparent ohmic contact flows into p-type GaN layer 203, enter the active layer 202 of non-doped GaN and are caught by three quantum wells Ino.2Gao.8N 2 nm wide where they are recombine with electrons emitting a sky-blue light. Sky-blue light emitted by the light-diode chip 300 enters the phosphor layer 401 either at once or after some reflections from the lower mirror surface and side faces of the inverted truncated pyramid. In the phosphor layer 401 a sky-blue light excites the phosphor and is converted into a white light.
Because of the inclined planes with a large slope Θ = 78.42° in the inverted pyramids, the light extraction coefficient from the light-diode chip 300 exceeds essentially the same for an usual flat chip.
Besides, in three quantum wells In0 . 2Ga0.8 2 nm wide formed in the layer 202 of non-doped GaN, on the side faces of the pyramids formed by the crystal planes {3 3 -6 2}, because of turn of these planes relative to the polar plane (0 0 0 1), the built-in electric field connected with spontaneous and piezoelectric polarization is strongly suppressed, which assists in increasing internal quantum output of light from the active layer 202.
Also, using of the truncated pyramids allows avoiding a contact of the active layer with the area close by the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion an electrical energy to light.
Example 3. Light-diode chip with eight holes in the form of inverted truncated hexagonal pyramids generating white light without using of phosphor.
The general diagram of the light-diode chip substrate 100 generating white light is given in Fig.l. The substrate of the light-diode chip consists of the rectangular plate from semiconductor gallium nitride crystal 2x2 mm 100 μ thick, and with the surface perpendicular to the crystal axis C [0 0 0 1] . At the plate eight inverted truncated hexagonal pyramids are formed with faces coinciding with crystal planes {1 1 -2 2}, and with the slope of the side faces relative to the plane (0 0 0 1) Θ = 58.41°, with the base sides oriented along crystal directions <1 -1 0 0> and with the length of the base sides Rb = 150 μ. Inverted truncated hexagonal pyramids are packed in the triangular two-dimensional lattice with period of 500 μ. Sectional diagram of the light-diode chip 300 in the area of one of the inverted truncated pyramids is shown in Fig. 5. Laminated structure of the light-diode chip consists of the conductive substrate 100 from n-type gallium nitride 100 μ thick on which underneath the metallic contact 302 is applied, layer 201 from a high quality n-type gallium nitride 2 μ thick, non-doped GaN layer 202 0.1 μ thick with one wide well Ino.1Gao.9 20 nm wide, and with three quantum wells Ino.15Gao.85N with variable width being 2 nm on the faces of inverted truncated hexagonal pyramids coinciding with crystal planes (1 1 -2 2) and 4 nm out the pyramids on the horizontal crystal plane (0 0 0 1), p-type GaN layer 203 0.1 μ thick, indium oxide with tin (ITO) layer 204 1 μ thick on top of which the metallic net contact 501 is applied electrically connected with the strengthened metallic contact 303 on which the optical light diffuser 502 is placed.
Wiring of the light-diode chip 300 in the light diode or light-diode lamp is carried out onto the mirror reflective surface, for example, polished aluminum or copper plate.
When applying constant voltage between the contacts 302 and 303, current flows in the light-diode chip 300, wherein electrons from the contact 302 flows at first into the conductive n-type gallium nitride substrate 100, then into a high quality n-type gallium nitride layer 201 and then enter the active layer 202 non-doped GaN, where they are caught at first into a wide well In0.iGa0.gN 20 nm wide, and then tunnel into three quantum wells In0.2Ga0.sN 2 nm wide on the faces of the pyramids and 4 nm on the areas of the horizontal plane out the pyramids where they recombine with holes emitting a sky-blue light on the faces of the pyramids and yellow light - on the areas of the horizontal plane out the pyramids. In their turn, the holes from the conductive indium oxide with tin (ITO) layer 204 forming the transparent ohmic contact flows into p-type gallium nitride layer 203 , enter the active layer 202 of non-doped GaN and are caught by three quantum wells Ino.2Gao.8N with a variable width where they recombine with electrons emitting sky-blue and yellow light. Sky-blue and yellow light emitted by the light-diode chip 300 enters the optical light diffuser 502 either at once or after some reflections from the lower mirror surface and side faces of the inverted truncated pyramid. In the optical light diffuser 502 sky-blue and yellow lights are mixed converted into a white light.
Because of the inclined planes with a large slope Θ = 58.41° in the inverted pyramids, the light extraction coefficient from the light-diode chip 300 exceeds essentially the same for an usual flat chip.
Besides, in three quantum wells In0.2Ga0.s 2 nm wide formed in the layer 202 of non-doped GaN, on the side faces of the pyramid formed by the crystal planes {1 1 -2 2}, because of turn of these planes relative to the polar plane (0 0 0 1), the built-in electric field connected with spontaneous . and piezoelectric polarization is strongly suppressed, which assists in increasing internal quantum output of light from the active layer 202.
Also, using of the truncated pyramids allows avoiding a contact of the active layer with the area close by the pyramid apex where the increased speed of nonradiative recombination reduces the internal quantum output because of dislocations and polluting impurities and decreases the coefficient of conversion an electrical energy to light.
Despite the fact that this invention has been described and illustrated by the examples of the invention embodiments it should be noted that this invention in no case, is limited by the examples given.

Claims

1. A light-emitting semiconductor device comprising:
- a substrate ;
- a first layer from n-type semiconductor formed on the substrate;
- a second layer from p-type semiconductor;
- an active layer arranged between the first layer and the second layer;
- a conductive layer arranged on the second layer;
- a first contact applied on the substrate;
- a second contact applied on the conductive layer, wherein the substrate comprises at least one through hole made in the form of truncated inverted pyramid wherein the first, second, active and conductive layers are applied both on the horizontal areas of the substrate, and on the internal faces of holes.
2. The light-emitting semiconductor device according to claim 1 wherein the number of the faces of said pyramids is from 3 to 24, length of the side of the pyramids' base is from 10 μ to 1 mm, slope of the side faces of said pyramids in relation to the substrate surface is from 10° to 90°, height of the cut-off part of the pyramid is from 5% to 50% of its full height.
3. The light-emitting semiconductor device according to claim 1 wherein through holes are arranged in the form of two-dimensional lattice.
4. The light-emitting semiconductor device according to claim 1 wherein the substrate thickness is from 10 μ to 1 mm .
5. The light-emitting semiconductor device according to claim 1 wherein the substrate is made from gallium nitride.
6. The light-emitting semiconductor device according to claim 1 wherein the substrate is made from silicon carbide.
7. The light-emitting semiconductor device according to claim 1 wherein the substrate is made from aluminum oxide.
8. The light-emitting semiconductor device according to claim 1 wherein the conductive layer is transparent or semi-transparent .
9. The light-emitting semiconductor device according to claim 8 wherein the conductive layer is made from indium oxide with tin (ITO) .
10. The light-emitting semiconductor device according to claim 8 wherein the conductive layer is made from a metal from 50 to 400 A thick.
11. The light-emitting semiconductor device according to claim 1 wherein the first layer from n-type semiconductor is made from gallium nitride doped with silicon.
12. The light-emitting semiconductor device according to claim 1 wherein the second layer from p-type semiconductor is made from gallium nitride doped with magnesium.
13. The light-emitting semiconductor device according to claim 1 wherein the active layer is made from gallium nitride (GaN) and a solid solution of boron-aluminum-gallium- indium nitride (BxAlyGazIni_zN ) .
14. The light-emitting semiconductor device according to claim 1 wherein the active layer is made composite and consists of the layers from a semiconductor with blende phase structure and from the layers with zinc sulfide phase structure .
15. The light-emitting semiconductor device according to claim 1 wherein the active layer comprises multiple quantum wells made from a solid solution of boron-aluminum- gallium-indium nitride ( BxAlyGazIni-zN ) .
16. The light-emitting semiconductor device according to claim 1 wherein the active layer comprises one wide well and multiple quantum wells made from a solid solution of boron-aluminum-gallium-indium nitride ( BxAlyGazIni_zN ) .
17. The light-emitting semiconductor device according to claim 1 wherein it additionally comprises a phosphor layer arranged on the upper surface of the chip for conversion a sky-blue light into a white one.
18. The light-emitting semiconductor device according to claim 1 wherein it additionally comprises an optical light diffuser arranged on the upper surface of the chip for receiving white light from a mixture of light fluxes of different colors emitted from the pyramid faces and flat areas outside the pyramid.
19. The light-emitting semiconductor device according to claim 1 wherein the second contact applied on the conductive layer is made not solid with possibility of partial transmitting a light.
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