WO2013015550A2 - Semiconductor light-emitting diode and method for manufacturing same - Google Patents

Semiconductor light-emitting diode and method for manufacturing same Download PDF

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Publication number
WO2013015550A2
WO2013015550A2 PCT/KR2012/005663 KR2012005663W WO2013015550A2 WO 2013015550 A2 WO2013015550 A2 WO 2013015550A2 KR 2012005663 W KR2012005663 W KR 2012005663W WO 2013015550 A2 WO2013015550 A2 WO 2013015550A2
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pillar
type
type cladding
emitting diode
light emitting
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PCT/KR2012/005663
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French (fr)
Korean (ko)
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WO2013015550A3 (en
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조병구
민재식
권세훈
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주식회사 칩테크놀러지
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Publication of WO2013015550A3 publication Critical patent/WO2013015550A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Definitions

  • the present invention relates to a semiconductor light emitting diode that emits light of visible or ultraviolet wavelengths, and to a method of manufacturing the same. More specifically, a cladding including a pillar and a pillar support is formed, and an active layer is formed along the pillar and the pillar. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting diode capable of effectively increasing the effective light emitting area by forming conformally and a method of manufacturing the same.
  • LEDs light emitting diodes
  • Al or In are added to GaN
  • next-generation light emitting devices capable of maximizing energy saving, and their applications are expanding to the visible and ultraviolet spectrums.
  • the semiconductor light emitting diode described in the above-mentioned document is for reducing the light emitting area loss, and it was difficult to sufficiently secure an effective light emitting area.
  • the present invention has been made to solve the problems of the prior art, the technical problem to be achieved by the present invention is to form a cladding comprising a pillar portion and a pillar support, and conformal to the active layer along the pillar and pillar support ( It is to provide a semiconductor light emitting diode that can effectively increase the effective light emitting area by forming in conformal.
  • Another object of the present invention is to provide a method of manufacturing a semiconductor light emitting diode which can easily manufacture the above-described semiconductor light emitting diode.
  • the semiconductor light emitting diode includes a metal electrode, a pillar support formed of an n-type semiconductor material on the metal electrode, and a plurality of n-type semiconductor materials on the pillar support.
  • An n-type cladding comprising a pillar portion formed in the shape of a pillar, and conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, and a quantum well layer and a barrier layer alternately stacked.
  • a semiconductor light emitting diode includes a transparent electrode, a pillar support formed of an n-type semiconductor material on the transparent electrode, and an n-type semiconductor material on the pillar support.
  • An n-type cladding comprising a pillar portion formed in the shape of a pillar, and conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, and a quantum well layer and a barrier layer alternately stacked.
  • a semiconductor light emitting diode includes a metal electrode, a pillar support formed of a p-type semiconductor material on the metal electrode, and a plurality of p-type semiconductor materials on the pillar support.
  • P-type cladding comprising a pillar portion formed in the shape of a pillar, conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, the quantum well layer and the barrier layer alternately stacked
  • a semiconductor light emitting diode includes a transparent electrode, a pillar support formed of a p-type semiconductor material on the transparent electrode, and a plurality of p-type semiconductor materials on the pillar support.
  • P-type cladding comprising a pillar portion formed in the shape of a pillar, conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, the quantum well layer and the barrier layer alternately stacked
  • a method of manufacturing a semiconductor light emitting diode includes a pillar support portion formed of an n-type semiconductor material on a semiconductor substrate, and a plurality of n-type semiconductor materials on the pillar support portion.
  • the semiconductor light emitting diode according to the embodiments of the present invention may effectively increase the effective light emitting area by forming a cladding including a pillar portion and a pillar support portion, and forming an active layer conformally along the pillar portion and the pillar support portion. have.
  • the method of manufacturing a semiconductor light emitting diode according to embodiments of the present invention can easily manufacture the above-described semiconductor light emitting diode.
  • FIG. 1 is a perspective view of a semiconductor light emitting diode according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a semiconductor light emitting diode according to a first embodiment of the present invention.
  • 3 to 8 are cross-sectional views illustrating a process of manufacturing a semiconductor light emitting diode according to a first embodiment of the present invention.
  • FIG. 9 is a perspective view of a semiconductor light emitting diode according to a second embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of a semiconductor light emitting diode according to a second embodiment of the present invention.
  • FIG. 11 is a perspective view of a semiconductor light emitting diode according to a third embodiment of the present invention.
  • FIG. 12 is a cross-sectional view of a semiconductor light emitting diode according to a third embodiment of the present invention.
  • FIG. 13 is a perspective view of a semiconductor light emitting diode according to a fourth embodiment of the present invention.
  • FIG. 14 is a cross-sectional view of a semiconductor light emitting diode according to a fourth embodiment of the present invention.
  • the semiconductor light emitting diode according to the first embodiment of the present invention, the metal electrode 1100, n-type cladding (1210, 1221, 1222, 1223, 1224, 1225, 1226), active portion 1300, a p-type cladding 1400, and a transparent electrode 1500.
  • the n-type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 may be a pillar support part 1210 formed of an n-type semiconductor material on the metal electrode 1100, and an n-type semiconductor material on the pillar support part 1210.
  • Column portions 1221, 1222, 1223, 1224, 1225, and 1226, which are formed in a plurality of columnar shapes, and the n-type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 are n-type GaN. Can be formed.
  • the active part 1300 is conformally formed surrounding the pillar parts 1221, 1222, 1223, 1224, 1225, and 1226, and a pillar between the pillar parts 1221, 1222, 1223, 1224, 1225, and 1226. Conformally formed on the support 1210, the quantum well layer and the barrier layer are alternately stacked.
  • the active part 1300 may be alternately stacked with AlGaN quantum well layers and AlGaN barrier layers, and a plurality of AlGaN quantum well layers and AlGaN barrier layers may be alternately stacked as necessary.
  • the p-type cladding 1400 is conformally formed of a p-type semiconductor material on the active part 1300, and the p-type cladding 1400 may be formed of p-type GaN.
  • the transparent electrode 1500 is formed on the p-type cladding 1400 with a transparent conductive material such as ITO or FTO.
  • n-type claddings 1210, 1221, 1222, 1223, and 1224 using an atomic layer deposition (ALD) or the like with an n-type semiconductor material on a semiconductor substrate 1600 such as sapphire. 1225 and 1226 to form pillar supports 1210.
  • ALD atomic layer deposition
  • the pillar support part 1210 of the n-type cladding 1210, 1221, 1222, 1223, 1224, 1225, 1226 may be formed of n-type GaN.
  • the pillar portions 1221, 1222, 1223, 1224, of the n-type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 in the form of a plurality of pillars on the pillar support part 1210. 1225, 1226.
  • the pillar portions 1221, 1222, 1223, 1224, 1225, and 1226 of the n-type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 may be formed of n-type GaN.
  • the bulk is formed using atomic layer deposition (ALD), and the like, and a plurality of pillar shapes are formed by etching.
  • ALD atomic layer deposition
  • n-type semiconductor material may be exposed on the pillar support part 1210 using a PR (Photo Resist) pattern, and the upper part may be exposed by using an atomic layer deposition (ALD) method.
  • ALD atomic layer deposition
  • the pillar portions 1221, 1222, 1223, 1224, 1225, and 1226 are conformally stacked to alternately stack the quantum well layer and the barrier layer, and the pillar portions 1221, 1222, 1223, 1224, 1225, 1226.
  • the active part 1300 is formed by alternately stacking the quantum well layer and the barrier layer on the pillar support part 1210 between them.
  • the AlGaN quantum well layer and the AlGaN barrier layer are conformally stacked by surrounding the pillar portions 1221, 1222, 1223, 1224, 1225, and 1226 by using atomic layer deposition (ALD), etc.
  • AlGaN quantum well layer and AlGaN barrier layer conformally on pillar support 1210 between pillar portions 1221, 1222, 1223, 1224, 1225, 1226 using atomic layer deposition (ALD), etc. Laminated.
  • the active unit 1300 may be stacked with a plurality of AlGaN quantum well layer and AlGaN barrier layer alternately as necessary.
  • the p-type cladding 1400 is conformally formed on the active part 1300 using an atomic layer deposition (ALD) method using a p-type semiconductor material.
  • the p-type cladding 1400 may be formed of p-type GaN.
  • the sapphire substrate 1600 is removed, and reflective conduction such as Titanium, Silver, Copper alloy, etc. is formed on the bottom surface of the lift support part 1210 in which the pillar parts 1221, 1222, 1223, 1224, 1225, and 1226 are not formed.
  • the metal electrode 1100 is formed of a material by sputtering, electroplating, or the like.
  • the transparent electrode 1500 is formed on the p-type cladding 1400 using a sputtering method or the like with a transparent conductive material such as ITO or FTO.
  • the metal electrode 1100 may be formed after the transparent electrode 1500 is formed.
  • a semiconductor light emitting diode according to a second embodiment of the present invention will be described with reference to FIGS. 9 and 10. Hereinafter, only differences from the semiconductor light emitting diode according to the first embodiment of the present invention will be described.
  • the semiconductor light emitting diode according to the second embodiment of the present invention has a pillar support portion 2210 formed of an n-type semiconductor material on the transparent electrode 2100 and an n-type semiconductor material on the pillar support portion 2210 in a plurality of pillar shapes.
  • N-type claddings 2210, 2221, 2222, 2223, 2224, 2225, and 2226 are formed, including the formed pillar portions 2221, 2222, 2223, 2224, 2225, and 2226, and metal is formed on the p-type cladding 2400.
  • An electrode 2500 is formed.
  • a semiconductor light emitting diode according to a third embodiment of the present invention will be described with reference to FIGS. 11 and 12. Hereinafter, only differences from the semiconductor light emitting diode according to the first embodiment of the present invention will be described.
  • the semiconductor light emitting diode according to the third exemplary embodiment of the present invention has a pillar support part 3210 formed of a p-type semiconductor material on the metal electrode 3100 and a p-type semiconductor material on the pillar support part 3210 in a plurality of pillar shapes.
  • P-type claddings 3210, 3221, 3222, 3223, 3224, 3225, 3226 including the formed pillars 3221, 3222, 3223, 3224, 3225, 3226 are formed, and n-type on the active part 3300.
  • An n-type cladding 3400 is conformally formed of a semiconductor material, and a transparent electrode 3500 is formed on the n-type cladding 3400.
  • the semiconductor light emitting diode according to the fourth embodiment of the present invention has a pillar support portion 4210 formed of a p-type semiconductor material on the transparent electrode 4100 and a p-type semiconductor material formed on the pillar support portion 4210 in a plurality of pillar shapes.
  • P-type cladding 4210, 4221, 4222, 4223, 4224, 4225, 4226 including formed pillars 4221, 4222, 4223, 4224, 4225, 4226 are formed, and metal is formed on n-type cladding 4400.
  • An electrode 4500 is formed.

Abstract

The present invention relates to a semiconductor light-emitting diode comprising: a metal electrode; a column support unit formed of an n-type semiconductor material on the metal electrode; an n-type cladding including a column unit having a plurality of columns made of the n-type semiconductor material on the column support unit; an active unit which is formed so as to be conformal such that the active unit surrounds the column unit, and which is formed so as to be conformal on the column support unit between the column units, and which has quantum well layers and barrier layers alternately stacked therein; a p-type cladding formed of a p-type semiconductor material to be conformal on the active layer; and a transparent electrode formed on the p-type cladding.

Description

반도체 발광 다이오드 및 그의 제조 방법Semiconductor light emitting diode and method of manufacturing the same
본 발명은 가시광선이나 자외선 파장의 빛을 발광하는 반도체 발광 다이오드 및 그의 제조 방법에 관한 것으로서, 보다 상세하게는 기둥부와 기둥지지부를 포함하는 클래딩을 형성하고, 기둥부와 기둥지지부를 따라서 활성층을 컨포멀(conformal)하게 형성함으로써 유효 발광 면적을 효과적으로 증가시킬 수 있는 반도체 발광 다이오드 및 그의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting diode that emits light of visible or ultraviolet wavelengths, and to a method of manufacturing the same. More specifically, a cladding including a pillar and a pillar support is formed, and an active layer is formed along the pillar and the pillar. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting diode capable of effectively increasing the effective light emitting area by forming conformally and a method of manufacturing the same.
최근 GaN에 Al 또는 In을 첨가한 반도체 발광 다이오드(LED : light emitting diode)는 에너지 절약을 극대화시킬 수 있는 차세대 발광소자로 각광받고 있으며, 그 영역이 가시광선 및 자외선 스펙트럼까지 응용이 확대되고 있다.Recently, light emitting diodes (LEDs) in which Al or In are added to GaN have been spotlighted as next-generation light emitting devices capable of maximizing energy saving, and their applications are expanding to the visible and ultraviolet spectrums.
상술한 반도체 발광 다이오드의 발광 효율을 향상시키기 위하여 빛을 방출하는 활성층을 다중 양자 우물(multi quantum well) 구조로 형성시키는 방법이 한국특허 공개 제 10-2010-0006547호에 제안되었다.In order to improve the light emitting efficiency of the semiconductor light emitting diode described above, a method of forming an active layer that emits light into a multi quantum well structure has been proposed in Korean Patent Publication No. 10-2010-0006547.
그런데 상술한 문헌에 기재된 반도체 발광 다이오드는 발광 면적 손실을 감소시키기 위한 것으로서, 유효 발광 면적을 충분히 확보하기가 어려웠다.By the way, the semiconductor light emitting diode described in the above-mentioned document is for reducing the light emitting area loss, and it was difficult to sufficiently secure an effective light emitting area.
따라서 본 발명은 종래 기술의 문제점을 해결하기 위하여 안출된 것으로, 본 발명이 이루고자 하는 기술적 과제는, 기둥부와 기둥지지부를 포함하는 클래딩을 형성하고, 기둥부와 기둥지지부를 따라서 활성층을 컨포멀(conformal)하게 형성함으로써 유효 발광 면적을 효과적으로 증가시킬 수 있는 반도체 발광 다이오드를 제공하는 것이다.Accordingly, the present invention has been made to solve the problems of the prior art, the technical problem to be achieved by the present invention is to form a cladding comprising a pillar portion and a pillar support, and conformal to the active layer along the pillar and pillar support ( It is to provide a semiconductor light emitting diode that can effectively increase the effective light emitting area by forming in conformal.
또한 본 발명이 이루고자 하는 다른 기술적 과제는, 상술한 반도체 발광 다이오드를 용이하게 제조할 수 있는 반도체 발광 다이오드의 제조 방법을 제공하는 것이다.Another object of the present invention is to provide a method of manufacturing a semiconductor light emitting diode which can easily manufacture the above-described semiconductor light emitting diode.
본 발명이 이루고자 하는 기술적 과제들은 이상에서 언급한 기술적 과제들로 제한되지 않으며, 언급되지 않은 또 다른 기술적 과제들은 아래의 기재로부터 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above will be clearly understood by those skilled in the art from the following description. Could be.
상기와 같은 목적을 달성하기 위하여 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드는 금속 전극, 상기 금속 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩, 상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부 상에 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩 및 상기 p형 클래딩 상에 형성된 투명 전극을 포함한다.In order to achieve the above object, the semiconductor light emitting diode according to the first embodiment of the present invention includes a metal electrode, a pillar support formed of an n-type semiconductor material on the metal electrode, and a plurality of n-type semiconductor materials on the pillar support. An n-type cladding comprising a pillar portion formed in the shape of a pillar, and conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, and a quantum well layer and a barrier layer alternately stacked. An active part, a p-type cladding conformally formed of a p-type semiconductor material on the active part, and a transparent electrode formed on the p-type cladding.
상기와 같은 목적을 달성하기 위하여 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드는 투명 전극, 상기 투명 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩, 상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부 상에 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩 및 상기 p형 클래딩 상에 형성된 금속 전극을 포함한다.In order to achieve the above object, a semiconductor light emitting diode according to a second embodiment of the present invention includes a transparent electrode, a pillar support formed of an n-type semiconductor material on the transparent electrode, and an n-type semiconductor material on the pillar support. An n-type cladding comprising a pillar portion formed in the shape of a pillar, and conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, and a quantum well layer and a barrier layer alternately stacked. An active part, a p-type cladding conformally formed of a p-type semiconductor material on the active part, and a metal electrode formed on the p-type cladding.
상기와 같은 목적을 달성하기 위하여 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드는 금속 전극, 상기 금속 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩, 상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부 상에 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩 및 상기 n형 클래딩 상에 형성된 투명 전극을 포함한다.In order to achieve the above object, a semiconductor light emitting diode according to a third embodiment of the present invention includes a metal electrode, a pillar support formed of a p-type semiconductor material on the metal electrode, and a plurality of p-type semiconductor materials on the pillar support. P-type cladding comprising a pillar portion formed in the shape of a pillar, conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, the quantum well layer and the barrier layer alternately stacked An active part, an n-type cladding conformally formed of an n-type semiconductor material on the active part, and a transparent electrode formed on the n-type cladding.
상기와 같은 목적을 달성하기 위하여 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드는 투명 전극, 상기 투명 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩, 상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부 상에 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩 및 상기 n형 클래딩 상에 형성된 금속 전극을 포함한다.In order to achieve the above object, a semiconductor light emitting diode according to a fourth embodiment of the present invention includes a transparent electrode, a pillar support formed of a p-type semiconductor material on the transparent electrode, and a plurality of p-type semiconductor materials on the pillar support. P-type cladding comprising a pillar portion formed in the shape of a pillar, conformally formed surrounding the pillar portion, conformally formed on the pillar support portion between the pillar portions, the quantum well layer and the barrier layer alternately stacked An active part, an n-type cladding conformally formed of an n-type semiconductor material on the active part, and a metal electrode formed on the n-type cladding.
상기와 같은 다른 목적을 달성하기 위하여 본 발명의 일 실시예에 따른 반도체 발광 다이오드의 제조 방법은 반도체 기판 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩을 형성하는 단계, 상기 기둥부를 둘러싸며 컨포멀하게 양자우물층과 장벽층을 교대로 적층하고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 양자우물층과 장벽층을 교대로 적층하여 활성부를 형성하는 단계, 상기 활성부 상에 p형 반도체 물질로 컨포멀하게 p형 클래딩을 형성하는 단계, 상기 p형 클래딩 상에 투명 전극을 형성하는 단계 및 상기 기둥부가 형성되지 않은 기중지지부의 저면에 금속 전극을 형성하는 단계를 포함한다.In order to achieve the above object, a method of manufacturing a semiconductor light emitting diode according to an embodiment of the present invention includes a pillar support portion formed of an n-type semiconductor material on a semiconductor substrate, and a plurality of n-type semiconductor materials on the pillar support portion. Forming an n-type cladding including a pillar portion formed in a pillar shape, and conformally stacking quantum well layers and barrier layers alternately surrounding the pillar portions, and conformally forming a quantum well on the column support between the pillar portions. Alternately stacking layers and barrier layers to form an active portion, conformally forming a p-type cladding with a p-type semiconductor material on the active portion, forming a transparent electrode on the p-type cladding and the Forming a metal electrode on the bottom surface of the lifting portion is not formed pillar portion.
본 발명의 실시예들에 따른 반도체 발광 다이오드는 기둥부와 기둥지지부를 포함하는 클래딩을 형성하고, 기둥부와 기둥지지부를 따라서 활성층을 컨포멀(conformal)하게 형성함으로써 유효 발광 면적을 효과적으로 증가시킬 수 있다.The semiconductor light emitting diode according to the embodiments of the present invention may effectively increase the effective light emitting area by forming a cladding including a pillar portion and a pillar support portion, and forming an active layer conformally along the pillar portion and the pillar support portion. have.
또한, 본 발명의 실시예들에 따른 반도체 발광 다이오드의 제조 방법은 상술한 반도체 발광 다이오드를 용이하게 제조할 수 있다.In addition, the method of manufacturing a semiconductor light emitting diode according to embodiments of the present invention can easily manufacture the above-described semiconductor light emitting diode.
도 1은 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 사시도.1 is a perspective view of a semiconductor light emitting diode according to a first embodiment of the present invention.
도 2는 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 단면도.2 is a cross-sectional view of a semiconductor light emitting diode according to a first embodiment of the present invention.
도 3 내지 도 8은 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 제조 공정을 도시한 단면도들.3 to 8 are cross-sectional views illustrating a process of manufacturing a semiconductor light emitting diode according to a first embodiment of the present invention.
도 9는 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드의 사시도.9 is a perspective view of a semiconductor light emitting diode according to a second embodiment of the present invention.
도 10은 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드의 단면도.10 is a cross-sectional view of a semiconductor light emitting diode according to a second embodiment of the present invention.
도 11은 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드의 사시도.11 is a perspective view of a semiconductor light emitting diode according to a third embodiment of the present invention.
도 12는 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드의 단면도.12 is a cross-sectional view of a semiconductor light emitting diode according to a third embodiment of the present invention.
도 13은 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드의 사시도.13 is a perspective view of a semiconductor light emitting diode according to a fourth embodiment of the present invention.
도 14는 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드의 단면도14 is a cross-sectional view of a semiconductor light emitting diode according to a fourth embodiment of the present invention.
이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 설명하기로 한다. Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
본 발명의 제 1 실시예에 따른 반도체 발광 다이오드는 도 1 및 도 2에 도시된 것처럼, 금속 전극(1100), n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226), 활성부(1300), p형 클래딩(1400) 및 투명 전극(1500)을 포함하여 구성될 수 있다.1 and 2, the semiconductor light emitting diode according to the first embodiment of the present invention, the metal electrode 1100, n-type cladding (1210, 1221, 1222, 1223, 1224, 1225, 1226), active portion 1300, a p-type cladding 1400, and a transparent electrode 1500.
n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226)은 금속 전극(1100) 상에 n형 반도체 물질로 형성된 기둥지지부(1210)와, 기둥지지부(1210) 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(1221, 1222, 1223, 1224, 1225, 1226)를 포함하며, 이러한 n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226)은 n형 GaN로 형성될 수 있다.The n- type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 may be a pillar support part 1210 formed of an n-type semiconductor material on the metal electrode 1100, and an n-type semiconductor material on the pillar support part 1210. Column portions 1221, 1222, 1223, 1224, 1225, and 1226, which are formed in a plurality of columnar shapes, and the n- type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 are n-type GaN. Can be formed.
한편, 활성부(1300)는 기둥부(1221, 1222, 1223, 1224, 1225, 1226)를 둘러싸며 컨포멀하게 형성되고, 기둥부(1221, 1222, 1223, 1224, 1225, 1226) 사이의 기둥지지부(1210) 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된다.Meanwhile, the active part 1300 is conformally formed surrounding the pillar parts 1221, 1222, 1223, 1224, 1225, and 1226, and a pillar between the pillar parts 1221, 1222, 1223, 1224, 1225, and 1226. Conformally formed on the support 1210, the quantum well layer and the barrier layer are alternately stacked.
구체적으로, 활성부(1300)는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 적층되며, 필요에 따라서는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 다수 적층될 수 있다.In detail, the active part 1300 may be alternately stacked with AlGaN quantum well layers and AlGaN barrier layers, and a plurality of AlGaN quantum well layers and AlGaN barrier layers may be alternately stacked as necessary.
또한, p형 클래딩(1400)은 활성부(1300) 상에 p형 반도체 물질로 컨포멀하게 형성되며, 이러한 p형 클래딩(1400)은 p형 GaN로 형성될 수 있다.In addition, the p-type cladding 1400 is conformally formed of a p-type semiconductor material on the active part 1300, and the p-type cladding 1400 may be formed of p-type GaN.
한편, 투명 전극(1500)은 ITO나 FTO 등의 투명 도전 물질로 p형 클래딩(1400) 상에 형성된다.Meanwhile, the transparent electrode 1500 is formed on the p-type cladding 1400 with a transparent conductive material such as ITO or FTO.
이하에서는 도 3 내지 도 8을 참조하여 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 제조 방법에 대해서 설명한다.Hereinafter, a method of manufacturing a semiconductor light emitting diode according to a first embodiment of the present invention will be described with reference to FIGS. 3 to 8.
먼저, 도 3에 도시된 것처럼, 사파이어같은 반도체 기판(1600) 상에 n형 반도체 물질로 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226)의 기둥지지부(1210)를 형성한다. 여기에서, n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226)의 기둥지지부(1210)는 n형 GaN으로 형성될 수 있다.First, as shown in FIG. 3, n- type claddings 1210, 1221, 1222, 1223, and 1224 using an atomic layer deposition (ALD) or the like with an n-type semiconductor material on a semiconductor substrate 1600 such as sapphire. 1225 and 1226 to form pillar supports 1210. Here, the pillar support part 1210 of the n- type cladding 1210, 1221, 1222, 1223, 1224, 1225, 1226 may be formed of n-type GaN.
다음으로, 기둥지지부(1210) 상에 n형 반도체 물질로 다수의 기둥 모양으로 n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226)의 기둥부(1221, 1222, 1223, 1224, 1225, 1226)를 형성한다. 여기에서, n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226)의 기둥부(1221, 1222, 1223, 1224, 1225, 1226)는 n형 GaN으로 형성될 수 있다.Next, the pillar portions 1221, 1222, 1223, 1224, of the n- type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 in the form of a plurality of pillars on the pillar support part 1210. 1225, 1226. Here, the pillar portions 1221, 1222, 1223, 1224, 1225, and 1226 of the n- type claddings 1210, 1221, 1222, 1223, 1224, 1225, and 1226 may be formed of n-type GaN.
구체적으로 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 벌크를 형성하고 식각법 등을 이용하여 다수의 기둥 모양을 형성한다.Specifically, the bulk is formed using atomic layer deposition (ALD), and the like, and a plurality of pillar shapes are formed by etching.
다른 방법으로는 기둥지지부(1210) 상에 PR(Photo Resist) pattern 등을 이용하여 n형 반도체 물질의 일부만 상부에 드러나도록 하고, 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 상부에 드러난 n형 반도체 물질 상에 다시 n형 반도체 물질을 선택적으로 성장시킴으로써 n형 클래딩(1210, 1221, 1222, 1223, 1224, 1225, 1226)의 기둥부(1221, 1222, 1223, 1224, 1225, 1226)를 형성할 수도 있다.Alternatively, a portion of the n-type semiconductor material may be exposed on the pillar support part 1210 using a PR (Photo Resist) pattern, and the upper part may be exposed by using an atomic layer deposition (ALD) method. By selectively growing the n-type semiconductor material again on the n-type semiconductor material, the pillar portions 1221, 1222, 1223, 1224, 1225, 1226 of the n- type claddings 1210, 1221, 1222, 1223, 1224, 1225, 1226. May be formed.
다음으로, 기둥부(1221, 1222, 1223, 1224, 1225, 1226)를 둘러싸며 컨포멀하게 양자우물층과 장벽층을 교대로 적층하고, 기둥부(1221, 1222, 1223, 1224, 1225, 1226) 사이의 기둥지지부(1210) 상에 컨포멀하게 양자우물층과 장벽층을 교대로 적층하여 활성부(1300)를 형성한다.Next, the pillar portions 1221, 1222, 1223, 1224, 1225, and 1226 are conformally stacked to alternately stack the quantum well layer and the barrier layer, and the pillar portions 1221, 1222, 1223, 1224, 1225, 1226. The active part 1300 is formed by alternately stacking the quantum well layer and the barrier layer on the pillar support part 1210 between them.
구체적으로, AlGaN 양자우물층과 AlGaN 장벽층을 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 기둥부(1221, 1222, 1223, 1224, 1225, 1226)를 둘러싸며 컨포멀하게 적층하며, AlGaN 양자우물층과 AlGaN 장벽층을 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 기둥부(1221, 1222, 1223, 1224, 1225, 1226) 사이의 기둥지지부(1210) 상에 컨포멀하게 적층한다.Specifically, the AlGaN quantum well layer and the AlGaN barrier layer are conformally stacked by surrounding the pillar portions 1221, 1222, 1223, 1224, 1225, and 1226 by using atomic layer deposition (ALD), etc. AlGaN quantum well layer and AlGaN barrier layer conformally on pillar support 1210 between pillar portions 1221, 1222, 1223, 1224, 1225, 1226 using atomic layer deposition (ALD), etc. Laminated.
여기에서, 활성부(1300)는 필요에 따라서는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 다수 적층될 수 있다.Herein, the active unit 1300 may be stacked with a plurality of AlGaN quantum well layer and AlGaN barrier layer alternately as necessary.
다음으로, 활성부(1300) 상에 p형 반도체 물질로 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 컨포멀하게 p형 클래딩(1400)을 형성한다. 여기에서, p형 클래딩(1400)은 p형 GaN으로 형성될 수 있다.Next, the p-type cladding 1400 is conformally formed on the active part 1300 using an atomic layer deposition (ALD) method using a p-type semiconductor material. Here, the p-type cladding 1400 may be formed of p-type GaN.
다음으로, 사파이어 기판(1600)을 제거하고, 기둥부(1221, 1222, 1223, 1224, 1225, 1226)가 형성되지 않은 기중지지부(1210)의 저면에 Titanium, Silver, Copper alloy 등의 반사 도전 물질로 스퍼터링법이나 전기도금법 등을 이용하여 금속 전극(1100)을 형성한다.Next, the sapphire substrate 1600 is removed, and reflective conduction such as Titanium, Silver, Copper alloy, etc. is formed on the bottom surface of the lift support part 1210 in which the pillar parts 1221, 1222, 1223, 1224, 1225, and 1226 are not formed. The metal electrode 1100 is formed of a material by sputtering, electroplating, or the like.
다음으로, p형 클래딩(1400) 상에 ITO나 FTO 등의 투명 도전 물질로 스퍼터링법 등을 이용하여 투명 전극(1500)을 형성한다.Next, the transparent electrode 1500 is formed on the p-type cladding 1400 using a sputtering method or the like with a transparent conductive material such as ITO or FTO.
여기에서, 반드시 금속 전극(1100)을 형성한 후에 투명 전극(1500)을 형성할 필요는 없으며, 투명 전극(1500)을 형성한 후에 금속 전극(1100)을 형성해도 무방하다.Here, it is not necessary to form the transparent electrode 1500 after the metal electrode 1100 is formed, and the metal electrode 1100 may be formed after the transparent electrode 1500 is formed.
도 9 및 도 10을 참조하여, 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드에 대해서 설명한다. 이하에서는 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드와의 차이점에 대해서만 설명하기로 한다.A semiconductor light emitting diode according to a second embodiment of the present invention will be described with reference to FIGS. 9 and 10. Hereinafter, only differences from the semiconductor light emitting diode according to the first embodiment of the present invention will be described.
본 발명의 제 2 실시예에 따른 반도체 발광 다이오드는 투명 전극(2100) 상에 n형 반도체 물질로 형성된 기둥지지부(2210)와, 기둥지지부(2210) 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(2221, 2222, 2223, 2224, 2225, 2226)를 포함하는 n형 클래딩(2210, 2221, 2222, 2223, 2224, 2225, 2226)이 형성되고, p형 클래딩(2400) 상에 금속 전극(2500)이 형성된다.The semiconductor light emitting diode according to the second embodiment of the present invention has a pillar support portion 2210 formed of an n-type semiconductor material on the transparent electrode 2100 and an n-type semiconductor material on the pillar support portion 2210 in a plurality of pillar shapes. N- type claddings 2210, 2221, 2222, 2223, 2224, 2225, and 2226 are formed, including the formed pillar portions 2221, 2222, 2223, 2224, 2225, and 2226, and metal is formed on the p-type cladding 2400. An electrode 2500 is formed.
도 11 및 도 12를 참조하여, 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드에 대해서 설명한다. 이하에서는 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드와의 차이점에 대해서만 설명하기로 한다.A semiconductor light emitting diode according to a third embodiment of the present invention will be described with reference to FIGS. 11 and 12. Hereinafter, only differences from the semiconductor light emitting diode according to the first embodiment of the present invention will be described.
본 발명의 제 3 실시예에 따른 반도체 발광 다이오드는 금속 전극(3100) 상에 p형 반도체 물질로 형성된 기둥지지부(3210)와, 기둥지지부(3210) 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(3221, 3222, 3223, 3224, 3225, 3226)를 포함하는 p형 클래딩(3210, 3221, 3222, 3223, 3224, 3225, 3226)이 형성되고, 활성부(3300) 상에 n형 반도체 물질로 컨포멀하게 n형 클래딩(3400)이 형성되며, n형 클래딩(3400) 상에 투명 전극(3500)이 형성된다.The semiconductor light emitting diode according to the third exemplary embodiment of the present invention has a pillar support part 3210 formed of a p-type semiconductor material on the metal electrode 3100 and a p-type semiconductor material on the pillar support part 3210 in a plurality of pillar shapes. P-type claddings 3210, 3221, 3222, 3223, 3224, 3225, 3226 including the formed pillars 3221, 3222, 3223, 3224, 3225, 3226 are formed, and n-type on the active part 3300. An n-type cladding 3400 is conformally formed of a semiconductor material, and a transparent electrode 3500 is formed on the n-type cladding 3400.
도 13 및 도 14를 참조하여, 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드에 대해서 설명한다. 이하에서는 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드와의 차이점에 대해서만 설명하기로 한다.13 and 14, a semiconductor light emitting diode according to a fourth embodiment of the present invention will be described. Hereinafter, only differences from the semiconductor light emitting diode according to the third embodiment of the present invention will be described.
본 발명의 제 4 실시예에 따른 반도체 발광 다이오드는 투명 전극(4100) 상에 p형 반도체 물질로 형성된 기둥지지부(4210)와, 기둥지지부(4210) 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(4221, 4222, 4223, 4224, 4225, 4226)를 포함하는 p형 클래딩(4210, 4221, 4222, 4223, 4224, 4225, 4226)이 형성되고, n형 클래딩(4400) 상에 금속 전극(4500)이 형성된다.The semiconductor light emitting diode according to the fourth embodiment of the present invention has a pillar support portion 4210 formed of a p-type semiconductor material on the transparent electrode 4100 and a p-type semiconductor material formed on the pillar support portion 4210 in a plurality of pillar shapes. P- type cladding 4210, 4221, 4222, 4223, 4224, 4225, 4226 including formed pillars 4221, 4222, 4223, 4224, 4225, 4226 are formed, and metal is formed on n-type cladding 4400. An electrode 4500 is formed.
이상, 본 발명을 본 발명의 원리를 예시하기 위한 바람직한 실시예와 관련하여 설명하고 도시하였지만, 본 발명은 그와 같이 도시되고 설명된 그대로의 구성 및 작용으로 한정되는 것이 아니다.While the invention has been described and illustrated in connection with a preferred embodiment for illustrating the principles of the invention, the invention is not limited to the configuration and operation as such is shown and described.
오히려, 첨부된 청구범위의 사상 및 범주를 일탈함이 없이 본 발명에 대한 다수의 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다.Rather, it will be apparent to those skilled in the art that many changes and modifications to the present invention are possible without departing from the spirit and scope of the appended claims.
따라서, 그러한 모든 적절한 변경 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다.Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.

Claims (20)

  1. 금속 전극;Metal electrodes;
    상기 금속 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩;An n-type cladding including a pillar support portion formed of an n-type semiconductor material on the metal electrode and a pillar portion formed in a plurality of pillar shapes of the n-type semiconductor material on the pillar support portion;
    상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;An active part that is conformally formed surrounding the pillar part, conformally formed on the pillar support between the pillar parts, and an quantum well layer and a barrier layer alternately stacked;
    상기 활성부 상에 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩; 및A p-type cladding conformally formed of a p-type semiconductor material on the active portion; And
    상기 p형 클래딩 상에 형성된 투명 전극을 포함하는 반도체 발광 다이오드.A semiconductor light emitting diode comprising a transparent electrode formed on the p-type cladding.
  2. 제1항에 있어서,The method of claim 1,
    상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
  3. 제1항에 있어서,The method of claim 1,
    상기 활성부는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 적층된 반도체 발광 다이오드.The active part is a semiconductor light emitting diode in which an AlGaN quantum well layer and an AlGaN barrier layer are alternately stacked.
  4. 제3항에 있어서,The method of claim 3,
    상기 활성부는 상기 AlGaN 양자우물층과 상기 AlGaN 장벽층이 교대로 다수 적층된 반도체 발광 다이오드.The active unit is a semiconductor light emitting diode in which the AlGaN quantum well layer and the AlGaN barrier layer alternately stacked.
  5. 투명 전극;Transparent electrode;
    상기 투명 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩;An n-type cladding including a pillar support portion formed of an n-type semiconductor material on the transparent electrode and a pillar portion formed in a plurality of pillar shapes of the n-type semiconductor material on the pillar support portion;
    상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;An active part that is conformally formed surrounding the pillar part, conformally formed on the pillar support between the pillar parts, and an quantum well layer and a barrier layer alternately stacked;
    상기 활성부 상에 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩; 및A p-type cladding conformally formed of a p-type semiconductor material on the active portion; And
    상기 p형 클래딩 상에 형성된 금속 전극을 포함하는 반도체 발광 다이오드.And a metal electrode formed on the p-type cladding.
  6. 제5항에 있어서,The method of claim 5,
    상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
  7. 제5항에 있어서,The method of claim 5,
    상기 활성부는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 적층된 반도체 발광 다이오드.The active part is a semiconductor light emitting diode in which an AlGaN quantum well layer and an AlGaN barrier layer are alternately stacked.
  8. 제7항에 있어서,The method of claim 7, wherein
    상기 활성부는 상기 AlGaN 양자우물층과 상기 AlGaN 장벽층이 교대로 다수 적층된 반도체 발광 다이오드.The active unit is a semiconductor light emitting diode in which the AlGaN quantum well layer and the AlGaN barrier layer alternately stacked.
  9. 금속 전극;Metal electrodes;
    상기 금속 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩;A p-type cladding including a pillar support portion formed of a p-type semiconductor material on the metal electrode and a pillar portion formed of a plurality of pillar shapes of a p-type semiconductor material on the pillar support portion;
    상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;An active part that is conformally formed surrounding the pillar part, conformally formed on the pillar support between the pillar parts, and an quantum well layer and a barrier layer alternately stacked;
    상기 활성부 상에 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩; 및An n-type cladding conformally formed of an n-type semiconductor material on the active portion; And
    상기 n형 클래딩 상에 형성된 투명 전극을 포함하는 반도체 발광 다이오드.A semiconductor light emitting diode comprising a transparent electrode formed on the n-type cladding.
  10. 제9항에 있어서,The method of claim 9,
    상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
  11. 제9항에 있어서,The method of claim 9,
    상기 활성부는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 적층된 반도체 발광 다이오드.The active part is a semiconductor light emitting diode in which an AlGaN quantum well layer and an AlGaN barrier layer are alternately stacked.
  12. 제11항에 있어서,The method of claim 11,
    상기 활성부는 상기 AlGaN 양자우물층과 상기 AlGaN 장벽층이 교대로 다수 적층된 반도체 발광 다이오드.The active unit is a semiconductor light emitting diode in which the AlGaN quantum well layer and the AlGaN barrier layer alternately stacked.
  13. 투명 전극;Transparent electrode;
    상기 투명 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩;A p-type cladding including a pillar support formed of a p-type semiconductor material on the transparent electrode and a pillar portion formed of a plurality of pillars of p-type semiconductor material on the pillar support;
    상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;An active part that surrounds the pillar part and is conformally formed, conformally formed on the pillar support between the pillar parts, and an quantum well layer and a barrier layer alternately stacked;
    상기 활성부 상에 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩; 및An n-type cladding conformally formed of an n-type semiconductor material on the active portion; And
    상기 n형 클래딩 상에 형성된 금속 전극을 포함하는 반도체 발광 다이오드.And a metal electrode formed on the n-type cladding.
  14. 제13항에 있어서,The method of claim 13,
    상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
  15. 제13항에 있어서,The method of claim 13,
    상기 활성부는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 적층된 반도체 발광 다이오드.The active part is a semiconductor light emitting diode in which an AlGaN quantum well layer and an AlGaN barrier layer are alternately stacked.
  16. 제15항에 있어서,The method of claim 15,
    상기 활성부는 상기 AlGaN 양자우물층과 상기 AlGaN 장벽층이 교대로 다수 적층된 반도체 발광 다이오드.The active unit is a semiconductor light emitting diode in which the AlGaN quantum well layer and the AlGaN barrier layer alternately stacked.
  17. 반도체 기판 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩을 형성하는 단계;Forming an n-type cladding comprising a pillar support portion formed of an n-type semiconductor material on the semiconductor substrate and a pillar portion formed in a plurality of pillar shapes of the n-type semiconductor material on the pillar support portion;
    상기 기둥부를 둘러싸며 컨포멀하게 양자우물층과 장벽층을 교대로 적층하고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 양자우물층과 장벽층을 교대로 적층하여 활성부를 형성하는 단계;Forming an active part by alternately stacking a quantum well layer and a barrier layer circumferentially surrounding the pillar part, and alternately stacking a quantum well layer and a barrier layer on a pillar support between the pillar parts;
    상기 활성부 상에 p형 반도체 물질로 컨포멀하게 p형 클래딩을 형성하는 단계;Conformally forming a p-type cladding with a p-type semiconductor material on the active portion;
    상기 p형 클래딩 상에 투명 전극을 형성하는 단계; 및Forming a transparent electrode on the p-type cladding; And
    상기 기둥부가 형성되지 않은 기중지지부의 저면에 금속 전극을 형성하는 단계를 포함하는 반도체 발광 다이오드의 제조 방법.Forming a metal electrode on the bottom surface of the lifting portion is not formed pillar portion.
  18. 제17항에 있어서,The method of claim 17,
    상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드의 제조 방법.And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
  19. 제17항에 있어서,The method of claim 17,
    상기 활성부는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 적층된 반도체 발광 다이오드의 제조 방법.The active portion is a method of manufacturing a semiconductor light emitting diode in which the AlGaN quantum well layer and the AlGaN barrier layer alternately stacked.
  20. 제19항에 있어서,The method of claim 19,
    상기 활성부는 상기 AlGaN 양자우물층과 상기 AlGaN 장벽층이 교대로 다수 적층된 반도체 발광 다이오드의 제조 방법.The active portion is a method of manufacturing a semiconductor light emitting diode in which the AlGaN quantum well layer and the AlGaN barrier layer are alternately stacked.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
KR20070013291A (en) * 2004-04-28 2007-01-30 버티클 인코퍼레이티드 Vertical structure semiconductor devices
KR20100136684A (en) * 2009-06-19 2010-12-29 순천대학교 산학협력단 White nano light emitting diode and method for making the same
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
KR20110043461A (en) * 2009-10-19 2011-04-27 샤프 가부시키가이샤 Bar type light emitting device, method of manufacturing the same, backlight, illumination device and display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100073757A (en) * 2008-12-23 2010-07-01 삼성전자주식회사 Light emitting device using micro-rod and method of manufacturing the light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
KR20070013291A (en) * 2004-04-28 2007-01-30 버티클 인코퍼레이티드 Vertical structure semiconductor devices
KR20100136684A (en) * 2009-06-19 2010-12-29 순천대학교 산학협력단 White nano light emitting diode and method for making the same
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
KR20110043461A (en) * 2009-10-19 2011-04-27 샤프 가부시키가이샤 Bar type light emitting device, method of manufacturing the same, backlight, illumination device and display device

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