WO2013015550A3 - Semiconductor light-emitting diode and method for manufacturing same - Google Patents

Semiconductor light-emitting diode and method for manufacturing same Download PDF

Info

Publication number
WO2013015550A3
WO2013015550A3 PCT/KR2012/005663 KR2012005663W WO2013015550A3 WO 2013015550 A3 WO2013015550 A3 WO 2013015550A3 KR 2012005663 W KR2012005663 W KR 2012005663W WO 2013015550 A3 WO2013015550 A3 WO 2013015550A3
Authority
WO
WIPO (PCT)
Prior art keywords
unit
column
emitting diode
semiconductor light
conformal
Prior art date
Application number
PCT/KR2012/005663
Other languages
French (fr)
Korean (ko)
Other versions
WO2013015550A2 (en
Inventor
조병구
민재식
권세훈
Original Assignee
주식회사 칩테크놀러지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 칩테크놀러지 filed Critical 주식회사 칩테크놀러지
Publication of WO2013015550A2 publication Critical patent/WO2013015550A2/en
Publication of WO2013015550A3 publication Critical patent/WO2013015550A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

The present invention relates to a semiconductor light-emitting diode comprising: a metal electrode; a column support unit formed of an n-type semiconductor material on the metal electrode; an n-type cladding including a column unit having a plurality of columns made of the n-type semiconductor material on the column support unit; an active unit which is formed so as to be conformal such that the active unit surrounds the column unit, and which is formed so as to be conformal on the column support unit between the column units, and which has quantum well layers and barrier layers alternately stacked therein; a p-type cladding formed of a p-type semiconductor material to be conformal on the active layer; and a transparent electrode formed on the p-type cladding.
PCT/KR2012/005663 2011-07-25 2012-07-16 Semiconductor light-emitting diode and method for manufacturing same WO2013015550A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0073678 2011-07-25
KR1020110073678A KR101350812B1 (en) 2011-07-25 2011-07-25 Semiconductor Light Emitting Diode and Method for Manufacturing thereof

Publications (2)

Publication Number Publication Date
WO2013015550A2 WO2013015550A2 (en) 2013-01-31
WO2013015550A3 true WO2013015550A3 (en) 2013-03-21

Family

ID=47601611

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005663 WO2013015550A2 (en) 2011-07-25 2012-07-16 Semiconductor light-emitting diode and method for manufacturing same

Country Status (2)

Country Link
KR (1) KR101350812B1 (en)
WO (1) WO2013015550A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
KR20070013291A (en) * 2004-04-28 2007-01-30 버티클 인코퍼레이티드 Vertical structure semiconductor devices
KR20100136684A (en) * 2009-06-19 2010-12-29 순천대학교 산학협력단 White nano light emitting diode and method for making the same
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
KR20110043461A (en) * 2009-10-19 2011-04-27 샤프 가부시키가이샤 Bar type light emitting device, method of manufacturing the same, backlight, illumination device and display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100073757A (en) * 2008-12-23 2010-07-01 삼성전자주식회사 Light emitting device using micro-rod and method of manufacturing the light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
KR20070013291A (en) * 2004-04-28 2007-01-30 버티클 인코퍼레이티드 Vertical structure semiconductor devices
KR20100136684A (en) * 2009-06-19 2010-12-29 순천대학교 산학협력단 White nano light emitting diode and method for making the same
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
KR20110043461A (en) * 2009-10-19 2011-04-27 샤프 가부시키가이샤 Bar type light emitting device, method of manufacturing the same, backlight, illumination device and display device

Also Published As

Publication number Publication date
KR20130012454A (en) 2013-02-04
WO2013015550A2 (en) 2013-01-31
KR101350812B1 (en) 2014-01-13

Similar Documents

Publication Publication Date Title
WO2013032304A3 (en) Organic electronic device and method for manufacturing same
WO2013051875A3 (en) Organic light-emitting device and method for manufacturing same
WO2012102501A3 (en) Wafer-level light emitting diode package and method for manufacturing thereof
JP2011066400A5 (en)
WO2012060619A3 (en) Semiconductor device and a manufacturing method thereof
EP2360744A3 (en) Light emitting diode and method of manufacturing the same
WO2012108627A3 (en) Light emitting diode having photonic crystal structure and method of fabricating the same
EP2339652A3 (en) Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system
WO2012164437A3 (en) Light emitting device bonded to a support substrate
WO2012165903A3 (en) Semiconductor light-emitting device, method for manufacturing same, and semiconductor light-emitting device package and laser-processing apparatus comprising same
TR201111229A2 (en) Vertical light-emitting diode (vled) die with wear-stop layer n-type closure structure and its production method.
JP2014033185A5 (en)
JP2012129518A5 (en) Method for manufacturing photoelectric conversion device
WO2014017871A3 (en) Semiconductor light-emitting device
EP2750207A3 (en) Light-emitting diode and method of fabricating the same
WO2012020968A3 (en) Semiconductor light emitting diode having ohmic electrode structure and method for manufacturing same
WO2012057482A3 (en) Vertical-type light-emitting diode cell array, and method for manufacturing same
WO2012173416A3 (en) Semiconductor light emitting device and method of menufacturing the same
WO2010018946A3 (en) Semiconductor light‑emitting device and method for manufacturing same
WO2012091325A3 (en) Method for manufacturing light-emitting diode using nano-structures and light-emitting diode manufactured thereby
WO2013015550A3 (en) Semiconductor light-emitting diode and method for manufacturing same
WO2012115541A3 (en) Light-emitting nitride semiconductor device comprising substrate having through holes
JP2009004781A5 (en)
WO2011115414A3 (en) Multi-luminous element and method for manufacturing same
TW201613133A (en) Manufacturing method of light-emitting diode and its manufactured product

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12818135

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2014522737

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2012818135

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE