WO2013046217A3 - Selector device for bipolar rram - Google Patents

Selector device for bipolar rram Download PDF

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Publication number
WO2013046217A3
WO2013046217A3 PCT/IN2012/000411 IN2012000411W WO2013046217A3 WO 2013046217 A3 WO2013046217 A3 WO 2013046217A3 IN 2012000411 W IN2012000411 W IN 2012000411W WO 2013046217 A3 WO2013046217 A3 WO 2013046217A3
Authority
WO
WIPO (PCT)
Prior art keywords
bipolar
selector device
memory
volatile
high density
Prior art date
Application number
PCT/IN2012/000411
Other languages
French (fr)
Other versions
WO2013046217A2 (en
Inventor
Udayan Ganguly
Saurabh Lodha
Pranil Yogendra BAFNA
Prateek KARKARE
Pankaj S. KUMBHARE
V.S. Senthil SRINIVASAN
Original Assignee
Indian Institute Of Technology Bombay
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indian Institute Of Technology Bombay filed Critical Indian Institute Of Technology Bombay
Publication of WO2013046217A2 publication Critical patent/WO2013046217A2/en
Publication of WO2013046217A3 publication Critical patent/WO2013046217A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Abstract

Selector device for bipolar RRAM is disclosed. This invention relates to high density volatile and nonvolatile memories, and more particularly to selection devices in bipolar resistive random access memory. The present day technology uses positive and negative field on memory device to change resistance states. Various metal oxides used in bipolar RRAM operations display symmetric as well as asymmetric operation. However, there is no selection device which works close to symmetric or even some asymmetric operation. A memory element is proposed for providing high density volatile/non-volatile memory storage which comprises of memory element and bipolar vertical selector device. Further, the selector device is based on punch-through mechanism concept.
PCT/IN2012/000411 2011-06-13 2012-06-12 Selector device for bipolar rram WO2013046217A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN1727/MUM/2011 2011-06-13
IN1727MU2011 2011-06-13

Publications (2)

Publication Number Publication Date
WO2013046217A2 WO2013046217A2 (en) 2013-04-04
WO2013046217A3 true WO2013046217A3 (en) 2013-07-04

Family

ID=47996551

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IN2012/000411 WO2013046217A2 (en) 2011-06-13 2012-06-12 Selector device for bipolar rram

Country Status (1)

Country Link
WO (1) WO2013046217A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911788B2 (en) 2014-05-05 2018-03-06 Hewlett Packard Enterprise Development Lp Selectors with oxide-based layers
WO2016014089A1 (en) 2014-07-25 2016-01-28 Hewlett-Packard Development Company, L.P. Asymmetrically selecting memory elements
WO2016018313A1 (en) 2014-07-30 2016-02-04 Hewlett-Packard Development Company, L.P. Apparatus having a memory cell and a shunt device
US10175906B2 (en) 2014-07-31 2019-01-08 Hewlett Packard Enterprise Development Lp Encoding data within a crossbar memory array
TWI733854B (en) * 2016-09-21 2021-07-21 中國大陸商合肥睿科微電子有限公司 Techniques for initializing resistive memory devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250831A (en) * 1990-03-28 1993-10-05 Mitsubishi Denki Kabushiki Kaisha DRAM device having a memory cell array of a divided bit line type
US20020191434A1 (en) * 2001-06-05 2002-12-19 Carl Taussing Addressing and sensing a cross-point diode memory array
WO2005124787A2 (en) * 2004-06-16 2005-12-29 Koninklijke Philips Electronics N.V. Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor
US20100258782A1 (en) * 2009-04-10 2010-10-14 Ronald John Kuse Resistive-switching memory elements having improved switching characteristics
US20100295119A1 (en) * 2009-05-20 2010-11-25 Gurtej Sandhu Vertically-oriented semiconductor selection device for cross-point array memory
US20110001108A1 (en) * 2009-07-02 2011-01-06 Actel Corporation Front to back resistive random access memory cells

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250831A (en) * 1990-03-28 1993-10-05 Mitsubishi Denki Kabushiki Kaisha DRAM device having a memory cell array of a divided bit line type
US20020191434A1 (en) * 2001-06-05 2002-12-19 Carl Taussing Addressing and sensing a cross-point diode memory array
WO2005124787A2 (en) * 2004-06-16 2005-12-29 Koninklijke Philips Electronics N.V. Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor
US20100258782A1 (en) * 2009-04-10 2010-10-14 Ronald John Kuse Resistive-switching memory elements having improved switching characteristics
US20100295119A1 (en) * 2009-05-20 2010-11-25 Gurtej Sandhu Vertically-oriented semiconductor selection device for cross-point array memory
US20110001108A1 (en) * 2009-07-02 2011-01-06 Actel Corporation Front to back resistive random access memory cells

Also Published As

Publication number Publication date
WO2013046217A2 (en) 2013-04-04

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