WO2013155432A3 - Plasma enhanced atomic layer deposition method - Google Patents

Plasma enhanced atomic layer deposition method Download PDF

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Publication number
WO2013155432A3
WO2013155432A3 PCT/US2013/036398 US2013036398W WO2013155432A3 WO 2013155432 A3 WO2013155432 A3 WO 2013155432A3 US 2013036398 W US2013036398 W US 2013036398W WO 2013155432 A3 WO2013155432 A3 WO 2013155432A3
Authority
WO
WIPO (PCT)
Prior art keywords
sec
plasma
deposition method
pulse
layer deposition
Prior art date
Application number
PCT/US2013/036398
Other languages
French (fr)
Other versions
WO2013155432A2 (en
Inventor
Nigamananda Samal
Original Assignee
Veeco Instruments, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instruments, Inc. filed Critical Veeco Instruments, Inc.
Publication of WO2013155432A2 publication Critical patent/WO2013155432A2/en
Publication of WO2013155432A3 publication Critical patent/WO2013155432A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions

Abstract

A cyclic PE-ALD process (Fig. 3) includes four steps in two phases; in a first phase (TDMAT), a TDMAT pulse (e.g. 1 sec) is performed followed by a purge (e.g. 1.5 sec), and in a second phase (H2/Plasma), an H2 pulse (e.g. 2.5 sec) and RF power for a plasma pulse (e.g. 1 sec) are concurrently performed, followed by a purge. Cycles of this process build layers of TiN on the substrate that are highly conformal and not subject to H2 inclusions to nearly the same extent as prior art processes. The film quality is further improved by the application of RF power for plasma from beneath the substrate.
PCT/US2013/036398 2012-04-12 2013-04-12 Plasma enhanced atomic layer deposition method WO2013155432A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261623288P 2012-04-12 2012-04-12
US61/623,288 2012-04-12
US201361764889P 2013-02-14 2013-02-14
US61/764,889 2013-02-14

Publications (2)

Publication Number Publication Date
WO2013155432A2 WO2013155432A2 (en) 2013-10-17
WO2013155432A3 true WO2013155432A3 (en) 2015-07-02

Family

ID=49328286

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/036398 WO2013155432A2 (en) 2012-04-12 2013-04-12 Plasma enhanced atomic layer deposition method

Country Status (1)

Country Link
WO (1) WO2013155432A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9972695B2 (en) 2016-08-04 2018-05-15 International Business Machines Corporation Binary metal oxide based interlayer for high mobility channels
CN112626501A (en) * 2019-10-09 2021-04-09 长鑫存储技术有限公司 Method for improving impurity content of plasma deposition film and control device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6428859B1 (en) * 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20040018304A1 (en) * 2002-07-10 2004-01-29 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20050054196A1 (en) * 2003-09-08 2005-03-10 Taiwan Semiconductor Manufacturing Co., Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US20060225655A1 (en) * 2005-03-31 2006-10-12 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7235484B2 (en) * 2001-09-10 2007-06-26 Tegal Corporation Nanolayer thick film processing system and method
US20080182411A1 (en) * 2007-01-26 2008-07-31 Asm America, Inc. Plasma-enhanced ald of tantalum nitride films
US7485349B2 (en) * 2000-06-08 2009-02-03 Asm Genitech Korea Ltd. Thin film forming method
US7521379B2 (en) * 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
US20120000422A1 (en) * 2008-07-03 2012-01-05 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485349B2 (en) * 2000-06-08 2009-02-03 Asm Genitech Korea Ltd. Thin film forming method
US6428859B1 (en) * 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US7235484B2 (en) * 2001-09-10 2007-06-26 Tegal Corporation Nanolayer thick film processing system and method
US20040018304A1 (en) * 2002-07-10 2004-01-29 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20050054196A1 (en) * 2003-09-08 2005-03-10 Taiwan Semiconductor Manufacturing Co., Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US20060225655A1 (en) * 2005-03-31 2006-10-12 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7521379B2 (en) * 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
US20080182411A1 (en) * 2007-01-26 2008-07-31 Asm America, Inc. Plasma-enhanced ald of tantalum nitride films
US20120000422A1 (en) * 2008-07-03 2012-01-05 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition

Also Published As

Publication number Publication date
WO2013155432A2 (en) 2013-10-17

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