In one aspect, a plurality of layers are formed over a substrate and a series of first trenches are etched into a first of the layers in a first direction. A series of second trenches are etched into the first layer in a second direction which is different from the first direction. Collectively, the...http://www.google.de/patents/US6160283?utm_source=gb-gplus-sharePatent US6160283 - Methods of forming integrated circuitry and integrated circuitry structures
