A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to...http://www.google.de/patents/US4338616?utm_source=gb-gplus-sharePatent US4338616 - Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
