A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated...http://www.google.de/patents/US6891227?utm_source=gb-gplus-sharePatent US6891227 - Self-aligned nanotube field effect transistor and method of fabricating same
