Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly...http://www.google.de/patents/US20070059948?utm_source=gb-gplus-sharePatent US20070059948 - ALD METAL OXIDE DEPOSITION PROCESS USING DIRECT OXIDATION
