A method for forming a dual-gated Semiconductor-On-Insulator (SOI) field effect transistor for integrated circuits includes the formation of a gate/oxide/channel/oxide/gate stack on top of an insulating layer. The process begins with the formation of a first gate electrode and first oxide layer on an...http://www.google.de/patents/US5273921?utm_source=gb-gplus-sharePatent US5273921 - Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
