A band gap engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking layer of metal doped silicon oxide material having a medium dielectric constant, such as aluminum doped silicon oxide, and separated from the semiconductor body including...http://www.google.de/patents/US7737488?utm_source=gb-gplus-sharePatent US7737488 - Blocking dielectric engineered charge trapping memory cell with high speed erase
