The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting...http://www.google.de/patents/US7378304?utm_source=gb-gplus-sharePatent US7378304 - Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
